Showing 1–5 of 5 results for author: Krupke, R

Raman Fingerprints of Graphene Produced by Anodic Electrochemical Exfoliation

Authors: Vaiva Nagyte, Daniel J. Kelly, Alexandre Felten, Gennaro Picardi, YuYoung Shin, Adriana Alieva, Robyn E. Worsley, Khaled Parvez, Simone Dehm, Ralph Krupke, Sarah J. Haigh, Antonios Oikonomou, Andrew J. Pollard, Cinzia Casiraghi

Abstract: Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and d… ▽ More Electrochemical exfoliation is one of the most promising methods for scalable production of graphene. However, limited understanding of its Raman spectrum as well as lack of measurement standards for graphene strongly limit its industrial applications. In this work we show a systematic study of the Raman spectrum of electrochemically exfoliated graphene, produced using different electrolytes and different types of solvents in varying amounts. We demonstrate that no information on the thickness can be extracted from the shape of the 2D peak as this type of graphene is defective. Furthermore, the number of defects and the uniformity of the samples strongly depend on the experimental conditions, including post-processing. Under specific conditions, formation of short conductive trans-polyacetylene chains has been observed. Our Raman analysis provides guidance for the community on how to get information on defects coming from electrolyte, temperature and other experimental conditions, by making Raman spectroscopy a powerful metrology tool. △ Less

Submitted 15 April, 2020; originally announced June 2020.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, American Chemical Society after peer review. To access the final edited and published work, included the SI, see DOI: 10.1021/acs.nanolett.0c00332

Low-temperature electroluminescence excitation map** of excitons and trions in short channel monochiral carbon nanotube device

Authors: Marco Gaulke, Alexander Janissek, Naga Anirudh Peyyety, Imtiaz Alamgir, Adnan Riaz, Simone Dehm, Han Li, Uli Lemmer, Benjamin S. Flavel, Manfred M. Kappes, Frank Hennrich, Li Wei, Yuan Chen, Felix Pyatkov, Ralph Krupke

Abstract: Single walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near infrared, electrically driven, classical or non-classical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single tubes is challenging and heavily influenced by device fabrication, architecture a… ▽ More Single walled carbon nanotubes as emerging quantum-light sources may fill a technological gap in silicon photonics due to their potential use as near infrared, electrically driven, classical or non-classical emitters. Unlike in photoluminescence, where nanotubes are excited with light, electrical excitation of single tubes is challenging and heavily influenced by device fabrication, architecture and biasing conditions. Here we present electroluminescence spectroscopy data of ultra short channel devices made from (9,8) carbon nanotubes emitting in the telecom band. Emissions are stable under current biasing and no quenching is observed down to 10 nm gap size. Low-temperature electroluminescence spectroscopy data also reported exhibits cold emission and linewidths down to 2 meV at 4 K. Electroluminescence excitation maps give evidence that carrier recombination is the mechanism for light generation in short channels. Excitonic and trionic emissions can be switched on and off by gate voltage and corresponding emission efficiency maps were compiled. Insights are gained into the influence of acoustic phonons on the linewidth, absence of intensity saturation and exciton exciton annihilation, environmental effects like dielectric screening and strain on the emission wavelength, and conditions to suppress hysteresis and establish optimum operation conditions. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Graphene-enabled, directed nanomaterial placement from solution for large-scale device integration

Authors: Michael Engel, Damon B. Farmer, Jaione Tirapu Azpiroz, Jung-Woo T. Seo, Joohoon Kang, Phaedon Avouris, Mark C. Hersam, Ralph Krupke, Mathias Steiner

Abstract: Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface functionalization have a drawback where undesired chemical modifications can occur and deteriorate the deposited material. The application of electric-… ▽ More Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface functionalization have a drawback where undesired chemical modifications can occur and deteriorate the deposited material. The application of electric-field assisted placement techniques eliminates the element of chemical treatment; however, it requires an incorporation of conductive placement electrodes that limit the performance, scaling, and density of integrated electronic devices. Here, we report a method for electric-field assisted placement of solution-processed nanomaterials by using large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, then are removed without residue once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas larger than 1mm2. In order to demonstrate the broad applicability, we have assembled representative zero-, one-, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. This graphene-based placement technique affords nanoscale resolution at wafer scale, and could enable mass manufacturing of nanoelectronics and optoelectronics involving a wide range of nanomaterials prepared via solution-based approaches. △ Less

Submitted 21 February, 2018; originally announced February 2018.

Comments: 17 pages, 5 figures

Waveguide-integrated electroluminescent carbon nanotubes

Authors: Svetlana Khasminskaya, Feliks Pyatkov, Benjamin S. Flavel, Wolfram H. P. Pernice, Ralph Krupke

Abstract: Carbon based optoelectronic devices promise to revolutionize modern integrated circuits by combining outstanding electrical and optical properties into a unified technology. By coupling nanoelectronic devices to nanophotonic structures functional components such as nanoscale light emitting diodes, narrow-band thermal emitters, cavity controlled detectors and wideband electro optic modulators can b… ▽ More Carbon based optoelectronic devices promise to revolutionize modern integrated circuits by combining outstanding electrical and optical properties into a unified technology. By coupling nanoelectronic devices to nanophotonic structures functional components such as nanoscale light emitting diodes, narrow-band thermal emitters, cavity controlled detectors and wideband electro optic modulators can be realized for chipscale information processing. These devices not only allow the light-matter interaction of low-dimensional systems to be studied, but also provide fundamental building blocks for high bandwidth on-chip communication. Here we demonstrate how light from an electrically-driven carbon-nanotube can be coupled directly into a photonic waveguide architecture. We realize wafer scale, broadband sources integrated with nanophotonic circuits allowing for propagation of light over centimeter distances. Moreover, we show that the spectral properties of the emitter can be controlled directly on chip with passive devices using Mach-Zehnder interferometers and grating structures. The direct, near-field coupling of electrically generated light into a waveguide, opposed to far-field fiber coupling of external light sources, opens new avenues for compact optoelectronic systems in a CMOS compatible framework. △ Less

Submitted 24 June, 2013; originally announced June 2013.

Electroluminescence from chirality-sorted (9,7)-semiconducting carbon nanotube devices

Authors: Martin H. P. Pfeiffer, Ninette Stürzl, Christoph W. Marquardt, Michael Engel, Simone Dehm, Frank Hennrich, Manfred M. Kappes, Uli Lemmer, Ralph Krupke

Abstract: We have measured the electroluminescence and photoluminescence of (9,7) semiconducting carbon nanotube devices and demonstrate that the electroluminescence wavelength is determined by the nanotube's chiral index (n,m). The devices were fabricated on Si3N4 membranes by dielectrophoretic assembly of tubes from monochiral dispersion. Electrically driven (9,7) devices exhibit a single Lorentzian shape… ▽ More We have measured the electroluminescence and photoluminescence of (9,7) semiconducting carbon nanotube devices and demonstrate that the electroluminescence wavelength is determined by the nanotube's chiral index (n,m). The devices were fabricated on Si3N4 membranes by dielectrophoretic assembly of tubes from monochiral dispersion. Electrically driven (9,7) devices exhibit a single Lorentzian shaped emission peak at 825 nm in the visible part of the spectrum. The emission could be assigned to the excitonic E22 interband transition by comparison of the electroluminescence spectra with corresponding photoluminescence excitation maps. We show a linear dependence of the EL peak width on the electrical current, and provide evidence for the inertness of Si3N4 surfaces with respect to the nanotubes optical properties. △ Less

Submitted 27 July, 2011; originally announced July 2011.

Comments: 6 pages, 3 figures, submitted to Optics Express