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The Belle II Detector Upgrades Framework Conceptual Design Report
Authors:
H. Aihara,
A. Aloisio,
D. P. Auguste,
M. Aversano,
M. Babeluk,
S. Bahinipati,
Sw. Banerjee,
M. Barbero,
J. Baudot,
A. Beaubien,
F. Becherer,
T. Bergauer,
F. U. Bernlochner.,
V. Bertacchi,
G. Bertolone,
C. Bespin,
M. Bessner,
S. Bettarini,
A. J. Bevan,
B. Bhuyan,
M. Bona,
J. F. Bonis,
J. Borah,
F. Bosi,
R. Boudagga
, et al. (186 additional authors not shown)
Abstract:
We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive wit…
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We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive with the LHC and other experiments.
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Submitted 4 July, 2024; v1 submitted 26 June, 2024;
originally announced June 2024.
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Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology
Authors:
Lars Schall,
Christian Bespin,
Ivan Caicedo,
Jochen Dingfelder,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Konstantinos Moustakas,
Heinz Pernegger,
Petra Riedler,
Walter Snoeys,
Norbert Wermes,
Sinuo Zhang
Abstract:
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted…
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Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x 33) um$^2$. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented.
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Submitted 19 February, 2024;
originally announced February 2024.
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Rate-Induced Transitions in Networked Complex Adaptive Systems: Exploring Dynamics and Management Implications Across Ecological, Social, and Socioecological Systems
Authors:
Vítor V. Vasconcelos,
Flávia M. D. Marquitti,
Theresa Ong,
Lisa C. McManus,
Marcus Aguiar,
Amanda B. Campos,
Partha S. Dutta,
Kristen Jovanelly,
Victoria Junquera,
Jude Kong,
Elisabeth H. Krueger,
Simon A. Levin,
Wenying Liao,
Mingzhen Lu,
Dhruv Mittal,
Mercedes Pascual,
Flávio L. Pinheiro,
Juan Rocha,
Fernando P. Santos,
Peter Sloot,
Chenyang,
Su,
Benton Taylor,
Eden Tekwa,
Sjoerd Terpstra
, et al. (5 additional authors not shown)
Abstract:
Complex adaptive systems (CASs), from ecosystems to economies, are open systems and inherently dependent on external conditions. While a system can transition from one state to another based on the magnitude of change in external conditions, the rate of change -- irrespective of magnitude -- may also lead to system state changes due to a phenomenon known as a rate-induced transition (RIT). This st…
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Complex adaptive systems (CASs), from ecosystems to economies, are open systems and inherently dependent on external conditions. While a system can transition from one state to another based on the magnitude of change in external conditions, the rate of change -- irrespective of magnitude -- may also lead to system state changes due to a phenomenon known as a rate-induced transition (RIT). This study presents a novel framework that captures RITs in CASs through a local model and a network extension where each node contributes to the structural adaptability of others. Our findings reveal how RITs occur at a critical environmental change rate, with lower-degree nodes tip** first due to fewer connections and reduced adaptive capacity. High-degree nodes tip later as their adaptability sources (lower-degree nodes) collapse. This pattern persists across various network structures. Our study calls for an extended perspective when managing CASs, emphasizing the need to focus not only on thresholds of external conditions but also the rate at which those conditions change, particularly in the context of the collapse of surrounding systems that contribute to the focal system's resilience. Our analytical method opens a path to designing management policies that mitigate RIT impacts and enhance resilience in ecological, social, and socioecological systems. These policies could include controlling environmental change rates, fostering system adaptability, implementing adaptive management strategies, and building capacity and knowledge exchange. Our study contributes to the understanding of RIT dynamics and informs effective management strategies for complex adaptive systems in the face of rapid environmental change.
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Submitted 14 September, 2023;
originally announced September 2023.
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Maintaining human wellbeing as socio-environmental systems undergo regime shifts
Authors:
Andrew R. Tilman,
Elisabeth H. Krueger,
Lisa C. McManus,
James R. Watson
Abstract:
Global environmental change is pushing many socio-environmental systems towards critical thresholds, where ecological systems' states are on the precipice of tip** points and interventions are needed to navigate or avert impending transitions. Flickering, where a system vacillates between alternative stable states, is touted as a useful early warning signal of irreversible transitions to undesir…
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Global environmental change is pushing many socio-environmental systems towards critical thresholds, where ecological systems' states are on the precipice of tip** points and interventions are needed to navigate or avert impending transitions. Flickering, where a system vacillates between alternative stable states, is touted as a useful early warning signal of irreversible transitions to undesirable ecological regimes. However, while flickering may presage an ecological tip** point, these dynamics also pose unique challenges for human adaptation. In this work, we link an ecological model that can exhibit flickering to a model of human adaptation to a changing environment. This allows us to explore the impact of flickering on the utility of adaptive agents in a coupled socio-environmental system. We highlight the conditions under which flickering causes wellbeing to decline disproportionately, and explore how these dynamics impact the optimal timing of a transformational change that partially decouples wellbeing from environmental variability. The implications of flickering on nomadic communities in Mongolia, artisanal fisheries, and wildfire systems are explored as possible case studies. Flickering, driven in part by climate change and changes to governance systems, may already be impacting communities. We argue that governance interventions investing in adaptive capacity could blunt the negative impact of flickering that can occur as socio-environmental systems pass through tip** points, and therefore contribute to the sustainability of these systems.
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Submitted 8 September, 2023;
originally announced September 2023.
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Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology
Authors:
Christian Bespin,
Ivan Caicedo,
Jochen Dingfelder,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Konstantinos Moustakas,
Heinz Pernegger,
Petra Riedler,
Lars Schall,
Walter Snoeys,
Norbert Wermes
Abstract:
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, fe…
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Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$\,$cm x 2$\,$cm matrix consisting of 512 x 512 pixels with 33.04$\,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15}\,1\,$MeV n$_\text{eq}\,$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.
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Submitted 31 January, 2023;
originally announced January 2023.
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Formation of the Thebe Extension in the Ring System of Jupiter
Authors:
Nikolay Borisov,
Harald Krüger
Abstract:
Jupiter's tenuous dust ring system is embedded in the planet's inner magnetosphere, and - among other structures - contains a very tenuous protrusion called the Thebe extension. In an attempt to explain the existence of this swath of particles beyond Thebe's orbit, Hamilton and Krüger (2008) proposed that the dust particle motion is driven by a shadow resonance caused by variable dust charging on…
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Jupiter's tenuous dust ring system is embedded in the planet's inner magnetosphere, and - among other structures - contains a very tenuous protrusion called the Thebe extension. In an attempt to explain the existence of this swath of particles beyond Thebe's orbit, Hamilton and Krüger (2008) proposed that the dust particle motion is driven by a shadow resonance caused by variable dust charging on the day and night side of Jupiter. However, the model by Divine (1983) together with recent observations by the Juno spacecraft indicates a warm and rather dense inner magnetosphere of Jupiter which implies that the mechanism of the shadow resonance does not work. Instead we argue that dust grains ejected from Thebe due to micrometeoroid bombardment become the source of dust in the Thebe extension. We show that large (grain radii of a few micrometers up to multi-micrometers) charged dust grains having significant initial velocities oscillate in the Thebe extension. Smaller charged grains (with sub-micrometer radii) ejected from Thebe do not spend much time in the Thebe extension and migrate into the Thebe ring. At the same time, if such grains are ejected from larger dust grains in the Thebe extension due to fragmentation, they continue to oscillate within the Thebe extension for years. We argue that fragmentation of large dust grains in the Thebe extension could be the main source of sub-micrometer grains detected in the Thebe extension.
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Submitted 12 October, 2021;
originally announced October 2021.
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Charge measurement of $\text{SiO}_2$ nanoparticles in an RF-plasma by IR absorption
Authors:
Harald Krüger,
Elena Thiessen,
Franz Xaver Bronold,
Holger Fehske,
André Melzer
Abstract:
We have performed measurements of the IR absorption of $\text{SiO}_2$ nanoparticles confined in an argon radio-frequency plasma discharge using an FTIR spectrometer. By varying the gas pressure of the discharge and duty cycle of the applied radio-frequency voltage we observed a shift of the absorption peak of $\text{SiO}_2$. We attributed this shift to charge-dependent absorption features of…
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We have performed measurements of the IR absorption of $\text{SiO}_2$ nanoparticles confined in an argon radio-frequency plasma discharge using an FTIR spectrometer. By varying the gas pressure of the discharge and duty cycle of the applied radio-frequency voltage we observed a shift of the absorption peak of $\text{SiO}_2$. We attributed this shift to charge-dependent absorption features of $\text{SiO}_2$. The charge-dependent shift has been calculated for $\text{SiO}_2$ particles and from comparisons with the experiment the particle charge has been retrieved using our IRPRS (Infrared Phonon Resonance Shift) method. With the two different approaches of changing the gas pressure and altering the duty cycle we are able to deduce a relative change of the particle charge with pressure variations and an absolute estimate of the charge with the duty cycle.
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Submitted 27 September, 2021;
originally announced September 2021.
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The updated SANAE neutron monitor
Authors:
R. D. Strauss,
C. van der Merwe,
C. Diedericks,
H. Kruger,
H. G. Kruger,
K. D. Moloto,
S. Lotz,
G. M. Mosotho
Abstract:
Neutron monitors have been the premier ground-based instruments for monitoring the near-Earth cosmic ray flux for more than 70 years. It is essential to continue with such measurements in order to extend this unique long-term time series. Moreover, with the recent interest of the aviation industry to space weather effects, and especially the radiation risk posed by solar energetic particles and ga…
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Neutron monitors have been the premier ground-based instruments for monitoring the near-Earth cosmic ray flux for more than 70 years. It is essential to continue with such measurements in order to extend this unique long-term time series. Moreover, with the recent interest of the aviation industry to space weather effects, and especially the radiation risk posed by solar energetic particles and galactic cosmic rays, it is vital to extend the current neutron monitor network in order to provide near-real-time measurements to the space weather community. In this paper we discuss a new electronics system that was retrofitted to the SANAE neutron monitor in Antarctica. We present initial results from this system, featuring very high temporal resolution and discuss the techniques applied to the data analysis. Based on these successful upgrades, we are confident that this system can be used to rejuvenate the aligning neutron monitor network, and even possibly to revive some of the decommissioned instruments.
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Submitted 29 July, 2021;
originally announced July 2021.
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Experimental measurement of kinetic parameters using quantum plasmonic sensing
Authors:
K. T. Mpofu,
C. Lee,
G. E. M. Maguire,
H. G. Kruger,
M. S. Tame
Abstract:
Kinetic models are essential for describing how molecules interact in a variety of biochemical processes. The estimation of a model's kinetic parameters by experiment enables researchers to understand how pathogens, such as viruses, interact with other entities like antibodies and trial drugs. In this work, we report a simple proof-of-principle experiment that uses quantum sensing techniques to gi…
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Kinetic models are essential for describing how molecules interact in a variety of biochemical processes. The estimation of a model's kinetic parameters by experiment enables researchers to understand how pathogens, such as viruses, interact with other entities like antibodies and trial drugs. In this work, we report a simple proof-of-principle experiment that uses quantum sensing techniques to give a more precise estimation of kinetic parameters than is possible with a classical approach. The interaction we study is that of bovine serum albumin (BSA) binding to gold via an electrostatic mechanism. BSA is an important protein in biochemical research as it can be conjugated with other proteins and peptides to create sensors with a wide range of specificity. We use single photons generated via parametric down-conversion to probe the BSA-gold interaction in a plasmonic resonance sensor. We find that sub-shot-noise level fluctuations in the sensor signal allow us to achieve an improvement in the precision of up to 31.8% for the values of the kinetic parameters. This enhancement can in principle be further increased in the setup. Our work highlights the potential use of quantum states of light for sensing in biochemical research.
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Submitted 1 March, 2022; v1 submitted 14 July, 2021;
originally announced July 2021.
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Measuring kinetic parameters using quantum plasmonic sensing
Authors:
K. T. Mpofu,
C. Lee,
G. E. M. Maguire,
H. G. Kruger,
M. S. Tame
Abstract:
The measurement of parameters that describe kinetic processes is important in the study of molecular interactions. It enables a deeper understanding of the physical mechanisms underlying how different biological entities interact with each other, such as viruses with cells, vaccines with antibodies, or new drugs with specific diseases. In this work, we study theoretically the use of quantum sensin…
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The measurement of parameters that describe kinetic processes is important in the study of molecular interactions. It enables a deeper understanding of the physical mechanisms underlying how different biological entities interact with each other, such as viruses with cells, vaccines with antibodies, or new drugs with specific diseases. In this work, we study theoretically the use of quantum sensing techniques for measuring the kinetic parameters of molecular interactions. The sensor we consider is a plasmonic resonance sensor -- a label-free photonic sensor that is one of the most widely used in research and industry. The first type of interaction we study is the antigen BSA interacting with antibody IgG1, which provides a large sensor response. The second type is the enzyme carbonic anhydrase interacting with the tumor growth inhibitor benzenesulfonamide, which produces a small sensor response. For both types of interaction we consider the use of two-mode Fock states, squeezed vacuum states and squeezed displaced states. We find that these quantum states offer an enhancement in the measurement precision of kinetic parameters when compared to that obtained with classical light. The results may help in the design of more precise quantum-based sensors for studying kinetics in the life sciences.
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Submitted 13 May, 2022; v1 submitted 13 July, 2021;
originally announced July 2021.
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Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip
Authors:
Yannick Dieter,
Michael Daas,
Jochen Dingfelder,
Tomasz Hemperek,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
David-Leon Pohl,
Marco Vogt,
Tianyang Wang,
Norbert Wermes,
Pascal Wolf
Abstract:
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sens…
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The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\times$ 10$^{16}$n$_{\mathrm{eq}}$cm$^{-2}$, is presented. The sensor was bump-bonded and read out using the RD53A readout chip. After the highest fluence a hit-detection efficiency larger than 99% is measured for minimum ionising particles. The measured equivalent noise charge is comparable to conventional planar pixel sensors. Passive CMOS sensors are thus an attractive option for silicon detectors operating in radiation harsh environments like the upgrades for the LHC experiments.
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Submitted 9 May, 2021;
originally announced May 2021.
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Collisional Evolution of the Inner Zodiacal Cloud
Authors:
J. R. Szalay,
P. Pokorny,
D. M. Malaspina,
A. Pusack,
S. D. Bale,
K. Battams,
L. C. Gasque,
K. Goetz,
H. Kruger,
D. J. McComas,
N. A. Schwadron,
P. Strub
Abstract:
The zodiacal cloud is one of the largest structures in the solar system and strongly governed by meteoroid collisions near the Sun. Collisional erosion occurs throughout the zodiacal cloud, yet it is historically difficult to directly measure and has never been observed for discrete meteoroid streams. After six orbits with Parker Solar Probe (PSP), its dust impact rates are consistent with at leas…
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The zodiacal cloud is one of the largest structures in the solar system and strongly governed by meteoroid collisions near the Sun. Collisional erosion occurs throughout the zodiacal cloud, yet it is historically difficult to directly measure and has never been observed for discrete meteoroid streams. After six orbits with Parker Solar Probe (PSP), its dust impact rates are consistent with at least three distinct populations: bound zodiacal dust grains on elliptic orbits ($α$-meteoroids), unbound $β$-meteoroids on hyperbolic orbits, and a third population of impactors that may either be direct observations of discrete meteoroid streams, or their collisional byproducts ("$β$-streams"). $β$-streams of varying intensities are expected to be produced by all meteoroid streams, particularly in the inner solar system, and are a universal phenomenon in all exozodiacal disks. We find the majority of collisional erosion of the zodiacal cloud occurs in the range of $10-20$ solar radii and expect this region to also produce the majority of pick-up ions due to dust in the inner solar system. A zodiacal erosion rate of at least $\sim$100 kg s$^{-1}$ and flux of $β$-meteoroids at 1 au of $0.4-0.8 \times 10^{-4}$ m$^{-2}$ s$^{-1}$ is found to be consistent with the observed impact rates. The $β$-meteoroids investigated here are not found to be primarily responsible for the inner source of pick-up ions, suggesting nanograins susceptible to electromagnetic forces with radii below $\sim$50 nm are the inner source of pick-up ions. We expect the peak deposited energy flux to PSP due to dust to increase in subsequent orbits, up to 7 times that experienced during its sixth orbit.
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Submitted 16 April, 2021;
originally announced April 2021.
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Precision Measurement of Pixel Sensor Capacitance
Authors:
H. Krüger,
E. Kimmerle
Abstract:
The capacitance of the charge collection node of a sensor system is an important parameter for the design of the analog front-end electronics. The analog front-end of high-granularity sensors like for example hybrid pixel detectors need to be optimized for timing resolution, power consumption, and electronics noise - parameters which all depend on the pixel capacitance. Current pixel detector deve…
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The capacitance of the charge collection node of a sensor system is an important parameter for the design of the analog front-end electronics. The analog front-end of high-granularity sensors like for example hybrid pixel detectors need to be optimized for timing resolution, power consumption, and electronics noise - parameters which all depend on the pixel capacitance. Current pixel detector developments for the HL-LHC upgrade typically use silicon sensors with a pixel size in the order of $50 \times 50 um^2$ which have a pixel capacitance of several tens of fF, depending on the sensor geometry. We have developed a dedicated integrated circuit to be bump-bonded to a pixel sensor, which enables a precise pixel capacitance measurement by using charge-based capacitance measurement method. In this paper, we will describe the measurement method and the implementation of the capacitance measurement chip (Pixcap65) and show measurement results of a planar pixel sensor whose pixel capacitance is influenced by variations of the implant geometry.
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Submitted 21 October, 2020; v1 submitted 7 October, 2020;
originally announced October 2020.
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Electrostatic lofting of dust grains from the surfaces of Thebe and Amalthea
Authors:
Nikolay Borisov,
Harald Krüger
Abstract:
Energetic electrons from the inner radiation belt provide significant electric charging of the surfaces of Jupiter's moons Thebe and Amalthea whose orbits are located within this radiation belt. We estimate theoretically the electric fields in the vicinity of the polar regions of Thebe and Amalthea and argue that these fields are sufficient for lofting of micron and submicron-sized dust grains fro…
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Energetic electrons from the inner radiation belt provide significant electric charging of the surfaces of Jupiter's moons Thebe and Amalthea whose orbits are located within this radiation belt. We estimate theoretically the electric fields in the vicinity of the polar regions of Thebe and Amalthea and argue that these fields are sufficient for lofting of micron and submicron-sized dust grains from the surfaces of the moons. Thus, the lofting of charged dust grains in the electric fields can be considered as an additional source supplying dust to the gossamer rings in addition to dust ejection by micrometeoroid impacts onto the moons' surfaces. The suggested mechanism can explain qualitatively some peculiarities of the dust grain distributions within the gossamer rings.
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Submitted 23 September, 2020;
originally announced September 2020.
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The mini-neutron monitor: A new approach in neutron monitor design
Authors:
Du Toit Strauss,
Stepan Poluianov,
Cobus van der Merwe,
Hendrik Krüger,
Corrie Diedericks,
Helena Krüger,
Ilya Usoskin,
Bernd Heber,
Rendani Nndanganeni,
Juanjo Blanco-Ávalos,
Ignacio García-Tejedor,
Konstantin Herbst,
Rogelio Caballero-Lopez,
Katlego Moloto,
Alejandro Lara,
Michael Walter,
Nigussie Mezgebe Giday,
Rita Traversi
Abstract:
The near-Earth cosmic ray flux has been monitored for more than 70 years by a network of ground-based neutron monitors (NMs). With the ever-increasing importance of quantifying the radiation risk and effects of cosmic rays for, e.g., air and space-travel, it is essential to continue operating the existing NM stations, while expanding this crucial network. In this paper, we discuss a smaller and co…
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The near-Earth cosmic ray flux has been monitored for more than 70 years by a network of ground-based neutron monitors (NMs). With the ever-increasing importance of quantifying the radiation risk and effects of cosmic rays for, e.g., air and space-travel, it is essential to continue operating the existing NM stations, while expanding this crucial network. In this paper, we discuss a smaller and cost-effective version of the traditional NM, the mini-NM. These monitors can be deployed with ease, even to extremely remote locations, where they operate in a semi-autonomous fashion. We believe that the mini-NM, therefore, offers the opportunity to increase the sensitivity and expand the coverage of the existing NM network, making this network more suitable to near-real-time monitoring for space weather applications. In this paper, we present the technical details of the mini-NM's design and operation, and present a summary of the initial tests and science results.
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Submitted 29 July, 2020;
originally announced July 2020.
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DMAPS Monopix developments in large and small electrode designs
Authors:
Christian Bespin,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Leyre Flores Sanz de Acedo,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Cesar Augusto Marin Tobon,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
Francesco Piro,
Petra Riedler
, et al. (8 additional authors not shown)
Abstract:
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows…
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LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.
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Submitted 9 July, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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BDAQ53, a versatile pixel detector readout and test system for the ATLAS and CMS HL-LHC upgrades
Authors:
Michael Daas,
Yannick Dieter,
Jochen Dingfelder,
Markus Frohne,
Georgios Giakoustidis,
Tomasz Hemperek,
Florian Hinterkeuser,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
David-Leon Pohl,
Piotr Rymaszewski,
Mark Standke,
Tianyang Wang,
Marco Vogt,
Norbert Wermes
Abstract:
BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. BDAQ53 is used in applications where versatility and rapid customization are required, such as in laboratory testing environments, test beam campaigns, and permanent setups for qu…
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BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. BDAQ53 is used in applications where versatility and rapid customization are required, such as in laboratory testing environments, test beam campaigns, and permanent setups for quality control measurements. It consists of custom and commercial hardware, a Python-based software framework, and FPGA firmware. BDAQ53 is developed as open source software with both software and firmware being hosted in a public repository.
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Submitted 5 October, 2020; v1 submitted 22 May, 2020;
originally announced May 2020.
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Electronic model of a volcano-shaped size dependence in CO oxidation by gold nanoparticles
Authors:
Nigora Turaeva,
Herman Krueger
Abstract:
The theoretical model of a volcano-type size dependence of extraordinary catalytic activity of gold nanoparticles in CO oxidation is proposed based on the electronic theory of catalysis, the jellium model of metal clusters and the d-band model of formation bonds in transition metals. The kinetics of the general mechanism of CO oxidation reaction catalyzed by gold nanoparticles through dissociative…
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The theoretical model of a volcano-type size dependence of extraordinary catalytic activity of gold nanoparticles in CO oxidation is proposed based on the electronic theory of catalysis, the jellium model of metal clusters and the d-band model of formation bonds in transition metals. The kinetics of the general mechanism of CO oxidation reaction catalyzed by gold nanoparticles through dissociative adsorption of oxygen molecules and interaction with CO molecules from the gas-phase is considered by introducing electronic steps into 3-step mechanism of the reaction, corresponding to transitions between weak and strong chemisorbed states of intermediates. By introducing the exponential dependences of the fractions of weak and strong chemisorbed intermediates (O, CO2) on the size dependent Fermi level of the metal cluster with respect to antibonding energy levels of the intermediates, a volcano-type dependence of reaction rate on the size of gold nanoparticles is obtained. The dependence of the reaction rate upon the supports is taken into account by introducing the additional energy term into the Fermi level of the metal catalyst.
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Submitted 8 January, 2020;
originally announced January 2020.
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Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC
Authors:
M. Barbero,
P. Barrillon,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
J. Dingfelder,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
F. Hügging,
H. Krüger,
K. Moustakas,
A. Ouraou,
P. Pangaud,
I. Peric,
D-L. Pohl,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We develop…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad.
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Submitted 25 May, 2020; v1 submitted 4 November, 2019;
originally announced November 2019.
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Megapixels @ Megahertz -- The AGIPD High-Speed Cameras for the European XFEL
Authors:
Ulrich Trunk,
Aschkan Allahgholi,
Julian Becker,
Annette Delfs,
Roberto Dinapoli,
Peter Göttlicher,
Heinz Graafsma,
Dominic Greiffenberg,
Helmut Hirsemann,
Stefanie Jack,
Alexander Klyuev,
Hans Krüger,
Manuela Kuhn,
Torsten Laurus,
Alessandro Marras,
Davide Mezza,
Aldo Mozzanica,
Jennifer Poehlsen,
Ofir Shefer Shalev,
Igor Sheviakov,
Bernd Schmitt,
Jörn Schwandt,
Xintian Shi,
Sergej Smoljanin,
Jiaguo Zhang
, et al. (1 additional authors not shown)
Abstract:
The European XFEL is an extremely brilliant Free Electron Laser Source with a very demanding pulse structure: trains of 2700 X-Ray pulses are repeated at 10 Hz. The pulses inside the train are spaced by 220 ns and each one contains up to $10^{12}$ photons of 12.4 keV, while being $\le 100$ fs in length. AGIPD, the Adaptive Gain Integrating Pixel Detector, is a hybrid pixel detector developed by DE…
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The European XFEL is an extremely brilliant Free Electron Laser Source with a very demanding pulse structure: trains of 2700 X-Ray pulses are repeated at 10 Hz. The pulses inside the train are spaced by 220 ns and each one contains up to $10^{12}$ photons of 12.4 keV, while being $\le 100$ fs in length. AGIPD, the Adaptive Gain Integrating Pixel Detector, is a hybrid pixel detector developed by DESY, PSI, and the Universities of Bonn and Hamburg to cope with these properties. It is a fast, low noise integrating detector, with single photon sensitivity (for $\text{E}_γ \ge 6$ keV) and a large dynamic range, up to $10^4$ photons at 12.4 keV. This is achieved with a charge sensitive amplifier with 3 adaptively selected gains per pixel. 352 images can be recorded at up to 6.5 MHz and stored in the in-pixel analogue memory and read out between pulse trains. The core component of this detector is the AGIPD ASIC, which consists of $64 \times 64$ pixels of $200 μ\text{m} \times 200 μ\text{m}$. Control of the ASIC's image acquisition and analogue readout is via a command based interface. FPGA based electronic boards, controlling ASIC operation, image digitisation and 10 GE data transmission interface AGIPD detectors to DAQ and control systems. An AGIPD 1 Mpixel detector has been installed at the SPB experimental station in August 2017, while a second one is currently commissioned for the MID endstation. A larger (4 Mpixel) AGIPD detector and one to employ Hi-Z sensor material to efficiently register photons up to $\text{E}_γ \approx 25$ keV are currently under construction.
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Submitted 6 August, 2019;
originally announced August 2019.
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Resilience Dynamics of Urban Water Security and Potential for Tip** Points
Authors:
Elisabeth H. Krueger,
Dietrich Borchardt,
James W. Jawitz,
Harald Klammler,
Soohyun Yang,
Jonatan Zischg,
P. Suresh C. Rao
Abstract:
Cities are the drivers of socio-economic innovation, and are also forced to address the accelerating risk of failure in providing essential services such as water supply today and in the future. Here, we investigate the resilience of urban water supply security, which is defined in terms of the services that citizens receive. The resilience of services is determined by the availability and robustn…
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Cities are the drivers of socio-economic innovation, and are also forced to address the accelerating risk of failure in providing essential services such as water supply today and in the future. Here, we investigate the resilience of urban water supply security, which is defined in terms of the services that citizens receive. The resilience of services is determined by the availability and robustness of critical system elements, or 'capitals' (water resources, infrastructure, finances, management efficacy and community adaptation). We translate quantitative information about this portfolio of capitals from seven contrasting cities on four continents into parameters of a coupled systems dynamics model. Water services are disrupted by recurring stochastic shocks, and we simulate the dynamics of impact and recovery cycles. Resilience emerges under various constraints, expressed in terms of each city's capital portfolio. Systematic assessment of the parameter space produces the urban water resilience landscape, and we determine the position of each city along a continuous gradient from water insecure and non-resilient to secure and resilient systems. In several cities stochastic disturbance regimes challenge steady-state conditions and drive system collapse. While water insecure and non-resilient cities risk being pushed into a poverty trap, cities which have developed excess capitals risk being trapped in rigidity and crossing a tip** point from high to low services and collapse. Where public services are insufficient, community adaptation improves water security and resilience to varying degrees. Our results highlight the need for resilience thinking in the governance of urban water systems under global change pressures.
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Submitted 6 August, 2019; v1 submitted 16 April, 2019;
originally announced April 2019.
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Interstellar Dust in the Solar System: Model versus In-Situ Spacecraft Data
Authors:
Harald Krüger,
Peter Strub,
Nicolas Altobelli,
Veerle Sterken,
Ralf Srama,
Eberhard Grün
Abstract:
In the early 1990s, contemporary interstellar dust penetrating deep into the heliosphere was identified with the in-situ dust detector on board the Ulysses spacecraft. Later on, interstellar dust was also identified in the data sets measured with dust instruments on board Galileo, Cassini and Helios. Ulysses monitored the interstellar dust stream at high ecliptic latitudes for about 16 years. The…
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In the early 1990s, contemporary interstellar dust penetrating deep into the heliosphere was identified with the in-situ dust detector on board the Ulysses spacecraft. Later on, interstellar dust was also identified in the data sets measured with dust instruments on board Galileo, Cassini and Helios. Ulysses monitored the interstellar dust stream at high ecliptic latitudes for about 16 years. The three other spacecraft data sets were obtained in the ecliptic plane and cover much shorter time intervals.We compare in-situ interstellar dust measurements obtained with these four spacecrafts, published in the literature, with predictions of a state-of-the-art model for the dynamics of interstellar dust in the inner solar system (Interplanetary Meteoroid environment for EXploration, IMEX), in order to test the reliability of the model predictions. Micrometer and sub-micrometer sized dust particles are subject to solar gravity and radiation pressure as well as to the Lorentz force on a charged dust particle moving through the Interplanetary Magnetic Field. The IMEX model was calibrated with the Ulysses interstellar dust measurements and includes these relevant forces. We study the time-resolved flux and mass distribution of interstellar dust in the solar system. The IMEX model agrees with the spacecraft measurements within a factor of 2 to 3, also for time intervals and spatial regions not covered by the original model calibration with the Ulysses data set. It usually underestimates the dust fluxes measured by the space missions which were not used for the model calibration, i.e. Galileo, Cassini and Helios. IMEX is a unique time-dependent model for the prediction of interstellar dust fluxes and mass distributions for the inner and outer solar system. The model is suited to study dust detection conditions for past and future space missions.
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Submitted 1 March, 2019;
originally announced March 2019.
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The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade
Authors:
Ivan Caicedo,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Christian Bespin,
Patrick Breugnon,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
David-Leon Pohl,
Petra Riedler,
Alexandre Rozanov,
Piotr Rymaszewski
, et al. (5 additional authors not shown)
Abstract:
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>…
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Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed.
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Submitted 25 April, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
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CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade
Authors:
K. Moustakas,
M. Barbero,
I. Berdalovic,
C. Bespin,
P. Breugnon,
I. Caicedo,
R. Cardella,
Y. Degerli,
N. Egidos Plaja,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krueger,
T. Kugathasan,
C. A. Marin Tobon,
P. Pangaud,
H. Pernegger,
E. J. Schioppa,
W. Snoeys,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based o…
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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC).
LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~μm^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~μm^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$.
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Submitted 10 September, 2018;
originally announced September 2018.
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The Adaptive Gain Integrating Pixel Detector at the European XFEL
Authors:
Aschkan Allahgholi,
Julian Becker,
Annette Delfs,
Roberto Dinapoli,
Peter Goettlicher,
Dominic Greiffenberg,
Beat Henrich,
Helmut Hirsemann,
Manuela Kuhn,
Robert Klanner,
Alexander Klyuev,
Hans Krueger,
Sabine Lange,
Torsten Laurus,
Alessandro Marras,
Davide Mezza,
Aldo Mozzanica,
Magdalena Niemann,
Jennifer Poehlsen,
Joern Schwandt,
Igor Sheviakov,
Xintian Shi,
Sergej Smoljanin,
Lothar Steffen,
Jolanta Sztuk-Dambietz
, et al. (7 additional authors not shown)
Abstract:
The Adaptive Gain Integrating Pixel Detector (AGIPD) is an x-ray imager, custom designed for the European x-ray Free-Electron Laser (XFEL). It is a fast, low noise integrating detector, with an adaptive gain amplifier per pixel. This has an equivalent noise of less than 1 keV when detecting single photons and, when switched into another gain state, a dynamic range of more than 10$^4$ photons of 12…
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The Adaptive Gain Integrating Pixel Detector (AGIPD) is an x-ray imager, custom designed for the European x-ray Free-Electron Laser (XFEL). It is a fast, low noise integrating detector, with an adaptive gain amplifier per pixel. This has an equivalent noise of less than 1 keV when detecting single photons and, when switched into another gain state, a dynamic range of more than 10$^4$ photons of 12 keV. In burst mode the system is able to store 352 images while running at up to 6.5 MHz, which is compatible with the 4.5 MHz frame rate at the European XFEL. The AGIPD system was installed and commissioned in August 2017, and successfully used for the first experiments at the Single Particles, Clusters and Biomolecules (SPB) experimental station at the European XFEL since September 2017. This paper describes the principal components and performance parameters of the system.
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Submitted 2 October, 2018; v1 submitted 1 August, 2018;
originally announced August 2018.
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Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
Authors:
F. J. Iguaz,
F. Balli,
M. Barbero,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
S. Godiot,
F. Guilloux,
C. Guyot,
T. Hemperek,
T. Hirono,
H. Krüger,
J. P. Meyer,
A. Ouraou,
P. Pangaud,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating…
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This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays).
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Submitted 12 June, 2018;
originally announced June 2018.
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Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC
Authors:
Toko Hirono,
Marlon Barbero,
Pierre Barrillon,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Zongde Chen,
Michael Daas,
Yavuz Degerli,
Fabrice Guilloux,
Tomasz Hemperek,
Fabian Hugging,
Hans Kruger,
Patrick Pangaud,
Piotr Rymaszewski,
Philippe Schwemling,
Maxence Vandenbroucke,
Tianyang Wang,
Norbert Wermes
Abstract:
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip s…
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Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of $10^{15}$ $n_{eq}/cm^2$. The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > $10^7$ noise occupancy was as high as 98.9 % after NIEL irradiation.
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Submitted 25 March, 2018;
originally announced March 2018.
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Production and Integration of the ATLAS Insertable B-Layer
Authors:
B. Abbott,
J. Albert,
F. Alberti,
M. Alex,
G. Alimonti,
S. Alkire,
P. Allport,
S. Altenheiner,
L. Ancu,
E. Anderssen,
A. Andreani,
A. Andreazza,
B. Axen,
J. Arguin,
M. Backhaus,
G. Balbi,
J. Ballansat,
M. Barbero,
G. Barbier,
A. Bassalat,
R. Bates,
P. Baudin,
M. Battaglia,
T. Beau,
R. Beccherle
, et al. (352 additional authors not shown)
Abstract:
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i…
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During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.
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Submitted 6 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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The Cosmic Dust Analyzer onboard Cassini: ten years of discoveries
Authors:
Ralf Srama,
Sascha Kempf,
Georg Moragas-Klostermeyer,
Nicolas Altobelli,
Siegfried Auer,
Uwe Beckmann,
Sebastian Bugiel,
Marcia Burton,
Tom Economou,
Hugo Fechtig,
Katherina Fiege,
Simon F. Green,
Manuel Grande,
Ove Havnes,
Jon K. Hillier,
Stefan Helfert,
Mihaly Horanyi,
Sean Hsu,
Eduard Igenbergs,
E. K. Jessberger,
Torrence V. Johnson,
Emil Khalisi,
Harald Krüger,
Günter Matt,
Anna Mocker
, et al. (16 additional authors not shown)
Abstract:
The interplanetary space probe Cassini/Huygens reached Saturn in July 2004 after seven years of cruise phase. The Cosmic Dust Analyzer (CDA) measures the interplanetary, interstellar and planetary dust in our solar system since 1999 and provided unique discoveries. In 1999, CDA detected interstellar dust in the inner solar system followed by the detection of electrical charges of interplanetary du…
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The interplanetary space probe Cassini/Huygens reached Saturn in July 2004 after seven years of cruise phase. The Cosmic Dust Analyzer (CDA) measures the interplanetary, interstellar and planetary dust in our solar system since 1999 and provided unique discoveries. In 1999, CDA detected interstellar dust in the inner solar system followed by the detection of electrical charges of interplanetary dust grains during the cruise phase between Earth and Jupiter. The instrument determined the composition of interplanetary dust and the nanometre sized dust streams originating from Jupiter's moon Io. During the approach to Saturn in 2004, similar streams of submicron grains with speeds in the order of 100 km/s were detected from Saturn's inner and outer ring system and are released to the interplanetary magnetic field. Since 2004 CDA measured more than one million dust impacts characterizing the dust environment of Saturn. The instrument is one of three experiments which discovered the active ice geysers located at the south pole of Saturn's moon Enceladus in 2005. Later, a detailed compositional analysis of the water ice grains in Saturn's E ring system lead to the discovery of large reservoirs of liquid water (oceans) below the icy crust of Enceladus. Finally, the determination of the dust- magnetosphere interaction and the discovery of the extended E ring (at least twice as large as predicted) allowed the definition of a dynamical dust model of Saturn's E ring describing the observed properties. This paper summarizes the discoveries of a ten year story of success based on reliable measurements with the most advanced dust detector flown in space until today. This paper focuses on cruise results and findings achieved at Saturn with a focus on flux and density measurements.
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Submitted 13 February, 2018;
originally announced February 2018.
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Characterization and Verification Environment for the RD53A Pixel Readout Chip in 65 nm CMOS
Authors:
Marco Vogt,
Hans Krüger,
Tomasz Hemperek,
Jens Janssen,
David Leon Pohl,
Michael Daas
Abstract:
The RD53 collaboration is currently designing a large scale prototype pixel readout chip in 65 nm CMOS technology for the phase 2 upgrades at the HL-LHC. The RD53A chip will be available by the end of the year 2017 and will be extensively tested to confirm if the circuit and the architecture make a solid foundation for the final pixel readout chips for the experiments at the HL-LHC. A test and dat…
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The RD53 collaboration is currently designing a large scale prototype pixel readout chip in 65 nm CMOS technology for the phase 2 upgrades at the HL-LHC. The RD53A chip will be available by the end of the year 2017 and will be extensively tested to confirm if the circuit and the architecture make a solid foundation for the final pixel readout chips for the experiments at the HL-LHC. A test and data acquisition system for the RD53A chip is currently under development to perform single-chip and multi-chip module measurements. In addition, the verification of the RD53A design is performed in a dedicated simulation environment. The concept and the implementation of the test and data acquisition system and the simulation environment, which are based on a modular data acquisition and system testing framework, are presented in this work.
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Submitted 1 February, 2018; v1 submitted 8 November, 2017;
originally announced November 2017.
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Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
Authors:
Piotr Rymaszewski,
Marlon Barbero,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Zongde Chen,
Yavuz Degerli,
Stephanie Godiot,
Fabrice Guilloux,
Claude Guyot,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Mohamed Lachkar,
Patrick Pangaud,
Alexandre Rozanov,
Philippe Schwemling,
Maxence Vandenbroucke,
Tianyang Wang,
Norbert Wermes
Abstract:
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a…
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This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a device in the detector module will result in a lower production cost and lower material budget compared to the presently used hybrid designs. In this paper the chip architecture will be described followed by the simulation and measurement results.
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Submitted 15 November, 2017; v1 submitted 3 November, 2017;
originally announced November 2017.
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Study of prototypes of LFoundry active and monolithic CMOS pixels sensors for the ATLAS detector
Authors:
L. Vigani,
D. Bortoletto,
L. Ambroz,
R. Plackett,
T. Hemperek,
P. Rymaszewski,
T. Wang,
H. Krueger,
T. Hirono,
I. Caicedo Sierra,
N. Wermes,
M. Barbero,
S. Bhat,
P. Breugnon,
Z. Chen,
S. Godiot,
P. Pangaud,
A. Rozanov
Abstract:
High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recen…
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High Energy Particle Physics experiments at the LHC use hybrid silicon detectors, in both pixel and strip geometry, for their inner trackers. These detectors have proven to be very reliable and performant. Nevertheless, there is great interest in the development of depleted CMOS silicon detectors, which could achieve similar performances at lower cost of production and complexity. We present recent developments of this technology in the framework of the ATLAS CMOS demonstrator project. In particular, studies of two active sensors from LFoundry, CCPD_LF and LFCPIX, and the first fully monolithic prototype MONOPIX will be shown.
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Submitted 18 October, 2017;
originally announced October 2017.
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Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade
Authors:
T. Wang,
M. Barbero,
I. Berdalovic,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
R. Cardella,
Z. Chen,
Y. Degerli,
N. Egidos,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krüger,
T. Kugathasan,
F. Hügging,
C. A. Marin Tobon,
K. Moustakas,
P. Pangaud,
P. Schwemling,
H. Pernegger,
D-L. Pohl,
A. Rozanov
, et al. (3 additional authors not shown)
Abstract:
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo…
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Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown.
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Submitted 29 September, 2017;
originally announced October 2017.
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Radiation hard pixel sensors using high-resistive wafers in a 150 nm CMOS processing line
Authors:
D. -L. Pohl,
T. Hemperek,
I. Caicedo,
L. Gonella,
F. Hügging,
J. Janssen,
H. Krüger,
A. Macchiolo,
N. Owtscharenko,
L. Vigani,
N. Wermes
Abstract:
Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-…
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Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are produced using a 150 nm CMOS technology offered by LFoundry in Avezzano. The technology provides multiple metal and polysilicon layers, as well as metal-insulator-metal capacitors that can be employed for AC-coupling and redistribution layers. Several prototypes were fabricated and are characterized with minimum ionizing particles before and after irradiation to fluences up to 1.1 $\times$ 10$^{15}$ n$_{\rm eq}$ cm$^{-2}$. The CMOS-fabricated sensors perform equally well as standard pixel sensors in terms of noise and hit detection efficiency. AC-coupled sensors even reach 100% hit efficiency in a 3.2 GeV electron beam before irradiation.
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Submitted 2 March, 2017; v1 submitted 16 February, 2017;
originally announced February 2017.
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Charge collection properties in an irradiated pixel sensor built in a thick-film HV-SOI process
Authors:
B. Hiti,
V. Cindro,
A. Gorišek,
T. Hemperek,
T. Kishishita,
G. Kramberger,
H. Krüger,
I. Mandić,
M. Mikuž,
N. Wermes,
M. Zavrtanik
Abstract:
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiat…
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Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technology has already been characterized in terms of radiation hardness to TID (Total Ionizing Dose) and charge collection after a moderate neutron irradiation. In this article we present results of an extensive irradiation hardness study with neutrons up to a fluence of 1x10e16 neq/cm2. Charge collection in a passive pixelated structure was measured by Edge Transient Current Technique (E-TCT). The evolution of the effective space charge concentration was found to be compliant with the acceptor removal model, with the minimum of the space charge concentration being reached after 5x10e14 neq/cm2. An investigation of the in-pixel uniformity of the detector response revealed parasitic charge collection by the epitaxial silicon layer characteristic for the SOI design. The results were backed by a numerical simulation of charge collection in an equivalent detector layout.
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Submitted 26 October, 2017; v1 submitted 23 January, 2017;
originally announced January 2017.
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Characterization of Fully Depleted CMOS Active Pixel Sensors on High Resistivity Substrates for Use in a High Radiation Environment
Authors:
Toko Hirono,
Marlon Barbero,
Patrick Breugnon,
Stéphanie Godiot,
Tomasz Hemperek,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
Jian Liu,
Patrick Pangaud,
Ivan Perić,
David-Leon Pohl,
Alexandre Rozanov,
Piotr Rymaszewski,
Norbert Wermes
Abstract:
Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS…
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Depleted CMOS active sensors (DMAPS) are being developed for high-energy particle physics experiments in high radiation environments, such as in the ATLAS High Luminosity Large Hadron Collider (HL-LHC). Since charge collection by drift is mandatory for harsh radiation environment, the application of high bias voltage to high resistive sensor material is needed. In this work, a prototype of a DMAPS was fabricated in a 150nm CMOS process on a substrate with a resistivity of >2 kΩcm that was thinned to 100 μm. Full depletion occurs around 20V, which is far below the breakdown voltage of 110 V. A readout chip has been attached for fast triggered readout. Presented prototype also uses a concept of sub-pixel en/decoding three pixels of the prototype chip are readout by one pixel of the readout chip. Since radiation tolerance is one of the largest concerns in DMAPS, the CCPD_LF chip has been irradiated with X-rays and neutrons up to a total ionization dose of 50 Mrad and a fluence of 10E15neq/cm2, respectively.
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Submitted 9 December, 2016;
originally announced December 2016.
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Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
Authors:
T. Wang,
P. Rymaszewski,
M. Barbero,
Y. Degerli,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krüger,
J. Liu,
F. Orsini,
P. Pangaud,
A. Rozanov,
N. Wermes
Abstract:
The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exp…
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The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equip** the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.
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Submitted 3 November, 2016;
originally announced November 2016.
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Prototype Active Silicon Sensor in 150 nm HR-CMOS Technology for ATLAS Inner Detector Upgrade
Authors:
Piotr Rymaszewski,
Marlon Barbero,
Patrick Breugnon,
Stépahnie Godiot,
Laura Gonella,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Jian Liu,
Patrick Pangaud,
Ivan Peric,
Alexandre Rozanov,
Anqing Wang,
Norbert Wermes
Abstract:
The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prot…
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The LHC Phase-II upgrade will lead to a significant increase in luminosity, which in turn will bring new challenges for the operation of inner tracking detectors. A possible solution is to use active silicon sensors, taking advantage of commercial CMOS technologies. Currently ATLAS R&D programme is qualifying a few commercial technologies in terms of suitability for this task. In this paper a prototype designed in one of them (LFoundry 150 nm process) will be discussed. The chip architecture will be described, including different pixel types incorporated into the design, followed by simulation and measurement results.
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Submitted 4 January, 2016;
originally announced January 2016.
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A Monolithic active pixel sensor for ionizing radiation using a 180nm HV-SOI process
Authors:
Tomasz Hemperek,
Tetsuichi Kishishita,
Hans Krüger,
Norbert Wermes
Abstract:
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection laye…
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An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a buried silicon oxide inter-dielectric (BOX) layer is used to separate the CMOS electronics from the handle wafer which is used as a depleted charge collection layer. FD-SOI MAPS suffer from radiation damage such as transistor threshold voltage shifts due to charge traps in the oxide layers and charge states created at the silicon oxide boundaries (back gate effect). The X-FAB 180-nm HV-SOI technology offers an additional isolation by deep non-depleted implant between the BOX layer and the active circuitry witch mitigates this problem. Therefore we see in this technology a high potential to implement radiation-tolerant MAPS with fast charge collection property. The design and measurement results from a first prototype are presented including charge collection in neutron irradiated samples.
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Submitted 23 February, 2015; v1 submitted 12 December, 2014;
originally announced December 2014.
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DMAPS: a fully depleted monolithic active pixel sensor - analog performance characterization
Authors:
Miroslav Havránek,
Tomasz Hemperek,
Hans Krüger,
Yunan Fu,
Leonard Germic,
Tetsuichi Kishishita,
Theresa Obermann,
Norbert Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much belo…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s based on silicon substrates with a thin epitaxial layer (thickness of 10-15 $μ$m) in which charge is collected on an electrode, albeit by disordered and slow diffusion rather than by drift in a directed electric field. As a consequence, the signal is small ($\approx$ 1000 e$^-$) and the radiation tolerance is much below the LHC requirements by factors of 100 to 1000. In this paper we present the development of a fully Depleted Monolithic Active Pixel Sensors (DMAPS) based on a high resistivity substrate allowing the creation of a fully depleted detection volume. This concept overcomes the inherent limitations of charge collection by diffusion in the standard MAPS designs. We present results from a test chip EPCB01 designed in a commercial 150 nm CMOS technology. The technology provides a thin (50 $μ$m) high resistivity n-type silicon substrate as well as an additional deep p-well which allows to integrate full CMOS circuitry inside the pixel. Different matrix types with several variants of collection electrodes have been implemented. Measurements of the analog performance of this first implementation of DMAPS pixels will be presented.
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Submitted 2 July, 2014;
originally announced July 2014.
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Challenges for the Adaptive Gain Integrating Pixel Detector (AGIPD) design due to the high intensity photon radiation environment at the European XFEL
Authors:
J. Becker,
L. Bianco,
P. Göttlicher,
H. Graafsma,
H. Hirsemann,
S. Jack,
A. Klyuev,
S. Lange A. Marras,
U. Trunk,
R. Klanner,
J. Schwandt,
J. Zhang,
R. Dinapoli,
D. Greiffenberg,
B. Henrich,
A. Mozzanica,
B. Schmitt,
X. Shi,
M. Gronewald,
H. Krüger
Abstract:
The European X-ray Free Electron Laser (XFEL) is a new research facility currently under construction in Hamburg, Germany. With a pulse length of less than 100 fs and an extremely high luminosity of 27000 flashes per second the European XFEL will have a unique time structure that demands the development of new detectors tailored to the requirements imposed by the experiments while complying with t…
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The European X-ray Free Electron Laser (XFEL) is a new research facility currently under construction in Hamburg, Germany. With a pulse length of less than 100 fs and an extremely high luminosity of 27000 flashes per second the European XFEL will have a unique time structure that demands the development of new detectors tailored to the requirements imposed by the experiments while complying with the machine specific operation parameters. The Adaptive Gain Integrating Pixel Detector (AGIPD) is one response to the need for large 2D detectors, able to cope with the 4.5 MHz frame rate, as well as with the high dynamic range needed by XFEL experiments ranging from single photons to more than 10$^4$ 12 keV photons per pixel per pulse. In addition it has to withstand doses of up to 1 GGy over three years.
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Submitted 11 March, 2013;
originally announced March 2013.
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DEPFET active pixel detectors for a future linear $e^+e^-$ collider
Authors:
O. Alonso,
R. Casanova,
A. Dieguez,
J. Dingfelder,
T. Hemperek,
T. Kishishita amd T. Kleinohl,
M. Koch,
H. Krueger,
M. Lemarenko,
F. Luetticke,
C. Marinas,
M. Schnell,
N. Wermes,
A. Campbell,
T. Ferber,
C. Kleinwort,
C. Niebuhr,
Y. Soloviev,
M. Steder,
R. Volkenborn,
S. Yaschenko,
P. Fischer,
C. Kreidl,
I. Peric,
J. Knopf
, et al. (62 additional authors not shown)
Abstract:
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a senso…
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The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\mathrm{\mathbf{μm}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\mathbf{e^+ e^-}$ collider.
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Submitted 10 December, 2012;
originally announced December 2012.
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Signal and noise of Diamond Pixel Detectors at High Radiation Fluences
Authors:
Jieh-Wen Tsung,
Miroslav Havranek,
Fabian Hügging,
Harris Kagan,
Hans Krüger,
Norbert Wermes
Abstract:
CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal…
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CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 10$^{15}$ n$_{eq}$ cm$^{-2}$, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path $λ_{e/h}$ of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel capacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N figures with those for planar silicon pixel detectors using published charge loss measurements and the same extrapolation methods as for diamond. It is shown that the expected S/N of a diamond pixel detector with pixel pitches typical for LHC, exceeds that of planar silicon pixels at fluences beyond 10$^{15}$ particles cm$^{-2}$, the exact value only depending on the maximum operation voltage assumed for irradiated silicon pixel detectors.
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Submitted 13 August, 2012; v1 submitted 28 June, 2012;
originally announced June 2012.
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Infrastructure for Detector Research and Development towards the International Linear Collider
Authors:
J. Aguilar,
P. Ambalathankandy,
T. Fiutowski,
M. Idzik,
Sz. Kulis,
D. Przyborowski,
K. Swientek,
A. Bamberger,
M. Köhli,
M. Lupberger,
U. Renz,
M. Schumacher,
Andreas Zwerger,
A. Calderone,
D. G. Cussans,
H. F. Heath,
S. Mandry,
R. F. Page,
J. J. Velthuis,
D. Attié,
D. Calvet,
P. Colas,
X. Coppolani,
Y. Degerli,
E. Delagnes
, et al. (252 additional authors not shown)
Abstract:
The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infras…
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The EUDET-project was launched to create an infrastructure for develo** and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.
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Submitted 23 January, 2012;
originally announced January 2012.
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Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade
Authors:
ATLAS 3D Collaboration,
P. Grenier,
G. Alimonti,
M. Barbero,
R. Bates,
E. Bolle,
M. Borri,
M. Boscardin,
C. Buttar,
M. Capua,
M. Cavalli-Sforza,
M. Cobal,
A. Cristofoli,
G-F. Dalla Betta,
G. Darbo,
C. Da Vià,
E. Devetak,
B. DeWilde,
B. Di Girolamo,
D. Dobos,
K. Einsweiler,
D. Esseni,
S. Fazio,
C. Fleta,
J. Freestone
, et al. (68 additional authors not shown)
Abstract:
Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sen…
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Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlap** bias and read-out electrodes were tested and showed comparable performance.
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Submitted 21 January, 2011;
originally announced January 2011.
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Belle II Technical Design Report
Authors:
T. Abe,
I. Adachi,
K. Adamczyk,
S. Ahn,
H. Aihara,
K. Akai,
M. Aloi,
L. Andricek,
K. Aoki,
Y. Arai,
A. Arefiev,
K. Arinstein,
Y. Arita,
D. M. Asner,
V. Aulchenko,
T. Aushev,
T. Aziz,
A. M. Bakich,
V. Balagura,
Y. Ban,
E. Barberio,
T. Barvich,
K. Belous,
T. Bergauer,
V. Bhardwaj
, et al. (387 additional authors not shown)
Abstract:
The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been pr…
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The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.
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Submitted 1 November, 2010;
originally announced November 2010.
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CIX - A Detector for Spectral Enhanced X-ray Imaging by Simultaneous Counting and Integrating
Authors:
H. Krüger,
J. Fink,
E. Kraft,
N. Wermes,
P. Fischer,
I. Peric,
C. Herrmann,
M. Overdick,
W. Rütten
Abstract:
A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different direct converting sensor materials (CdZnTe and CdTe) bump bonded to its 8x8 pixel matrix. Photon counting devices give excellent results for low to medium X-ray f…
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A hybrid pixel detector based on the concept of simultaneous charge integration and photon counting will be presented. The second generation of a counting and integrating X-ray prototype CMOS chip (CIX) has been operated with different direct converting sensor materials (CdZnTe and CdTe) bump bonded to its 8x8 pixel matrix. Photon counting devices give excellent results for low to medium X-ray fluxes but saturate at high rates while charge integration allows the detection of very high fluxes but is limited at low rates by the finite signal to noise ratio. The combination of both signal processing concepts therefore extends the resolvable dynamic range of the X-ray detector. In addition, for a large region of the dynamic range, where counter and integrator operate simultaneously, the mean energy of the detected X-ray spectrum can be calculated. This spectral information can be used to enhance the contrast of the X-ray image. The advantages of the counting and integrating signal processing concept and the performance of the imaging system will be reviewed. The properties of the system with respect to dynamic range and sensor response will be discussed and examples of imaging with additional spectral information will be presented.
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Submitted 15 February, 2008;
originally announced February 2008.
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Status of a DEPFET pixel system for the ILC vertex detector
Authors:
M. Trimpl,
M. Koch,
R. Kohrs,
H. Krueger,
P. Lodomez,
L. Reuen,
C. Sandow,
E. v. Toerne,
J. J. Velthuis,
N. Wermes,
L. Andricek,
H. G. Moser,
R. H. Richter,
G. Lutz,
F. Giesen,
P. Fischer,
I. Peric
Abstract:
We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micro…
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We have developed a prototype system for the ILC vertex detector based on DEPFET pixels. The system operates a 128x64 matrix (with ~35x25 square micron large pixels) and uses two dedicated microchips, the SWITCHER II chip for matrix steering and the CURO II chip for readout. The system development has been driven by the final ILC requirements which above all demand a detector thinned to 50 micron and a row wise read out with line rates of 20MHz and more. The targeted noise performance for the DEPFET technology is in the range of ENC=100 e-. The functionality of the system has been demonstrated using different radioactive sources in an energy range from 6 to 40keV. In recent test beam experiments using 6GeV electrons, a signal-to-noise ratio of S/N~120 has been achieved with present sensors being 450 micron thick. For improved DEPFET systems using 50 micron thin sensors in future, a signal-to-noise of 40 is expected.
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Submitted 6 December, 2006; v1 submitted 13 June, 2006;
originally announced June 2006.
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Characterization of charge collection in CdTe and CZT using the transient current technique
Authors:
Johannes Fink,
Hans Krueger,
Philipp Lodomez,
Norbert Wermes
Abstract:
The charge collection properties in different particle sensor materials with respect to the shape of the generated signals, the electric field within the detector, the charge carrier mobility and the carrier lifetime are studied with the transient current technique (TCT). Using the well-known properties of Si as a reference, the focus is laid on Cadmium-Telluride (CdTe) and Cadmium-Zinc-Tellurid…
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The charge collection properties in different particle sensor materials with respect to the shape of the generated signals, the electric field within the detector, the charge carrier mobility and the carrier lifetime are studied with the transient current technique (TCT). Using the well-known properties of Si as a reference, the focus is laid on Cadmium-Telluride (CdTe) and Cadmium-Zinc-Telluride (CZT), which are currently considered as promising candidates for the efficient detection of X-rays. All measurements are based on a transient-current technique (TCT) setup, which allows the recording of current pulses generated by an 241Am alpha-source. These signals will be interpreted with respect to the build-up of space-charges inside the detector material and the subsequent deformation of the electric field. Additionally the influence of different electrode materials (i.e. ohmic or Schottky contacts) on the current pulse shapes will be treated in the case of CdTe. Finally, the effects of polarization, i.e. the time-dependent degradation of the detector signals due to the accumulation of fixed charges within the sensor, are presented.
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Submitted 22 November, 2005; v1 submitted 21 November, 2005;
originally announced November 2005.
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2D Detectors for Particle Physics and for Imaging Applications
Authors:
Hans Krueger
Abstract:
The demands on detectors for particle detection as well as for medical and astronomical X-ray imaging are continuously pushing the development of novel pixel detectors. The state of the art in pixel detector technology to date are hybrid pixel detectors in which sensor and read-out integrated circuits are processed on different substrates and connected via high density interconnect structures. W…
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The demands on detectors for particle detection as well as for medical and astronomical X-ray imaging are continuously pushing the development of novel pixel detectors. The state of the art in pixel detector technology to date are hybrid pixel detectors in which sensor and read-out integrated circuits are processed on different substrates and connected via high density interconnect structures. While these detectors are technologically mastered such that large scale particle detectors can be and are being built, the demands for improved performance for the next generation particle detectors ask for the development of monolithic or semi-monolithic approaches. Given the fact that the demands for medical imaging are different in some key aspects, developments for these applications, which started as particle physics spin-off, are becomming rather independent. New approaches are leading to novel signal processing concepts and interconnect technologies to satisfy the need for very high dynamic range and large area detectors. The present state in hybrid and (semi-)monolithic pixel detector development and their different approaches for particle physics and imaging application is reviewed.
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Submitted 1 April, 2005; v1 submitted 10 March, 2005;
originally announced March 2005.