Showing 1–20 of 20 results for author: Koopmans, B

Picosecond all-optical switching of Co/Gd based synthetic ferrimagnets

Authors: **zhi Li, Thomas J. Kools, Hamed Pezeshki, Joao M. B. E. Joosten, Jianing Li, Junta Igarashi, Julius Hohlfeld, Reinoud Lavrijsen, Stephane Mangin, Gregory Malinowski, Bert Koopmans

Abstract: Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and multi-domain state (MDS) behavior using longer pulses, which is compatible with state-of-the-art integrated photonics. In this work, we present our studies on… ▽ More Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and multi-domain state (MDS) behavior using longer pulses, which is compatible with state-of-the-art integrated photonics. In this work, we present our studies on the AOS and MDS of [Co/Gd]n (n = 1, 2) using ps optical pulses across a large composition range. We theoretically and experimentally show that a large Gd layer thickness can enhance the AOS energy efficiency and maximum pulse duration. We have identified two augmenting roles of Gd in extending the maximum pulse duration. On the inter-atomic level, we found that more Gd offers a prolonged angular momentum supply to Co. On the micromagnetic level, a higher Gd content brings the system to be closer to magnetic compensation in the equilibrized hot state, thereby reducing the driving force for thermally assisted nucleation of domain walls, combating the formation of a MDS. Our study presents a composition overview of AOS in [Co/Gd]n and offers useful physical insights regarding AOS fundamentals as well as the projected photonic integration. △ Less

Submitted 23 June, 2024; originally announced June 2024.

Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets

Authors: Shen Li, Mouad Fattouhi, Tianxun Huang, Chen Lv, Mark C. H. de Jong, **zhi Li, Xiaoyang Lin, Felipe Garcia-Sanchez, Eduardo Martinez, Stéphane Mangin, Bert Koopmans, Weisheng Zhao, Reinoud Lavrijsen

Abstract: The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been… ▽ More The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been uncovered. Here, we exploit interlayer chiral exchange bias fields in SFi to address both the sign and magnitude of the IL-DMI. Depending on the degree of imbalance between the two magnetic moments of the SFi, the amount of asymmetry, addressed via loop shifts of the hysteresis loops under an in-plane field reveals a unidirectional and chiral nature of the IL-DMI. The devices are then tested with SOT switching experiments and the process is examined via both transient state and steady state detection. In addition to field-free SOT switching, we find that the combination of IL-DMI and SOT give rise to multi-resistance states, which provides a possible direction for the future design of neuromorphic computing devices based on SOT. This work is a step towards characterizing and understanding the IL-DMI for spintronic applications. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Comments: no

MSC Class: no

Understanding voltage-controlled magnetic anisotropy effect for the manipulation of dipolar-dominated propagating spin waves

Authors: Adrien. A. D. Petrillo, Mouad Fattouhi, Adriano Di Pietro, Marta Alerany Solé, Luis Lopez Diaz, Gianfranco Durin, Bert Koopmans, Reinoud Lavrijsen

Abstract: Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computi… ▽ More Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computing solutions. Employing micromagnetic simulations, we assess the feasibility of utilizing spin waves in DE mode in conjunction with localized voltage-induced alterations in surface anisotropy to enable low-energy logic operations. Our findings underscore the critical importance of selecting an optimal excitation frequency and gate width, which significantly influence the efficiency of the phase shift induced in propagating spin waves. Notably, we demonstrate that a realistic phase shift of 2.5$\left[ π\ \text{mrad}\right]$ can be achieved at a Co(5nm)/MgO material system via the VCMA effect. Moreover, by tuning the excitation frequency, Co layer thickness, gate width, and the use of a GdO\textsubscript{x} dielectric, we illustrate the potential to enhance the phase shift by a factor of 200 when compared to MgO dielectrics. This research contributes valuable insights towards develo** next-generation computing technologies with reduced energy consumption. △ Less

Submitted 5 February, 2024; originally announced February 2024.

Integrated Magneto-photonic Non-Volatile Multi-Bit Memory

Authors: Hamed Pezeshki, **zhi Li, Reinoud Lavrijsen, Martijn Heck, Bert Koopmans

Abstract: We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization sta… ▽ More We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization state of the bits by locally increasing the power absorption of light at resonance with the cavity. We design an add/drop network of cavities to grant random access to multiple bits via a wavelength-division multiplexing scheme. Based on a three-dimensional finite-difference time-domain method, we numerically illustrate a compact device capable of switching and accessing 8 bits in different cavities with a 5 nm wavelength spacing in the conventional (C) telecommunication band. Our multi-bit device holds promise as a new paradigm for develo** an ultrafast photonically-addressable spintronic memory and may also empower novel opportunities for photonically-driven spintronic-based neuromorphic computing. △ Less

Submitted 4 February, 2024; originally announced February 2024.

Comments: 21 pages, 6 figures, 1 table

Electric control of optically-induced magnetization dynamics in a van der Waals ferromagnetic semiconductor

Authors: Freddie Hendriks, Rafael R. Rojas-Lopez, Bert Koopmans, Marcos H. D. Guimaraes

Abstract: Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magne… ▽ More Electric control of magnetization dynamics in two-dimensional (2D) magnetic materials is an essential step for the development of novel spintronic nanodevices. Electrostatic gating has been shown to greatly affect the static magnetic properties of some van der Waals magnets, but the control over their magnetization dynamics is still largely unexplored. Here we show that the optically-induced magnetization dynamics in the van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ can be effectively controlled by electrostatic gates, with a one order of magnitude change in the precession amplitude and over 10% change in the internal effective field. In contrast to the purely thermally-induced mechanisms previously reported for 2D magnets, we find that coherent opto-magnetic phenomena play a major role in the excitation of magnetization dynamics in Cr$_2$Ge$_2$Te$_6$. Our work sets the first steps towards electric control over the magnetization dynamics in 2D ferromagnetic semiconductors, demonstrating their potential for applications in ultrafast opto-magnonic devices. △ Less

Submitted 22 September, 2023; originally announced September 2023.

Effective rectification of THz electromagnetic fields in a ferrimagnetic iron garnet

Authors: T. G. H. Blank, E. A. Mashkovich, K. A. Grishunin, C. Schippers, M. V. Logunov, B. Koopmans, A. K. Zvezdin, A. V. Kimel

Abstract: It is found that single-cycle THz electromagnetic fields efficiently excite a GHz spin resonance mode in ferrimagnetic Tm$_3$Fe$_5$O$_{12}$, despite the near absence of GHz spectral components in the exciting THz pulse. By analyzing how the efficiency of excitation depends on the orientation and strength of the THz electric field, we show that it can be explained in terms of the nonlinear THz inve… ▽ More It is found that single-cycle THz electromagnetic fields efficiently excite a GHz spin resonance mode in ferrimagnetic Tm$_3$Fe$_5$O$_{12}$, despite the near absence of GHz spectral components in the exciting THz pulse. By analyzing how the efficiency of excitation depends on the orientation and strength of the THz electric field, we show that it can be explained in terms of the nonlinear THz inverse Cotton-Mouton effect. Here, the THz electric field gets effectively rectified and acts on the ferrimagnetic spins as a uni-polar effective magnetic field pulse. This interpretation is confirmed by a theoretical model based on the phenomenological analysis of the effective magnetic field, combined with the equations of motion derived from the effective Lagrangian for a ferrimagnet. Moreover, by using the outcome of two-dimensional THz spectroscopy, we conjecture a quantum-mechanical interpretation of the observed effect in terms of stimulated Raman scattering of THz photons by the crystal-field split f-f electronic transitions of Tm$^{3+}$. △ Less

Submitted 4 May, 2023; originally announced May 2023.

Comments: 15 pages, 9 figures

Journal ref: Phys. Rev. B 108, 094439 (2023)

Strain effects on magnetic compensation and spin reorientation transition of Co/Gd synthetic ferrimagnets

Authors: Giovanni Masciocchi, Thomas J. Kools, **zhi Li, Adrien A. D. Petrillo, Bert Koopmans, Reinoud Lavrijsen, Andreas Kehlberger, Mathias Kläui

Abstract: Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In this work, we systematically study the effects of strain on the perpendicular magnetic anisotropy and magnetization compensation of Co/Gd and Co/Gd/Co/Gd synthetic… ▽ More Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In this work, we systematically study the effects of strain on the perpendicular magnetic anisotropy and magnetization compensation of Co/Gd and Co/Gd/Co/Gd synthetic ferrimagnets. Firstly, the spin reorientation transition of a bilayer system is investigated in wedge type samples, where we report an increase in the perpendicular magnetic anisotropy in the presence of in-plane strain. Using a model for magnetostatics and spin reorientation transition in this type of system, we confirm that the observed changes in anisotropy field are mainly due to the Co magnetoelastic anisotropy. Secondly, the magnetization compensation of a quadlayer is studied. We find that magnetization compensation of this synthetic ferrimagnetic system is not altered by external strain. This confirms the resilience of this material system against strain that may be induced during the integration process, making Co/Gd ferrimagnets suitable candidates for spintronics applications. △ Less

Submitted 31 March, 2023; v1 submitted 27 March, 2023; originally announced March 2023.

Switchable-magnetisation planar probe MFM sensor

Authors: Michael Verhage, Tunç H. Çiftçi, Michiel Reul, Tamar Cromwijk, Thijs J. N. van Stralen, Bert Koopmans, Oleg Kurnosikov, Kees Flipse

Abstract: We present an alternative switching-magnetization magnetic force microscopy (SM- MFM) method using planar tip-on-chip probes. Unlike traditional needle-like tips, the planar probe approach integrates a microdevice near the tip apex with dedicated functionality. Its 1 mm x 1 mm planar surface paves the way for freedom in ultra thin-film engineering and micro-/nano-tailoring for application-oriented… ▽ More We present an alternative switching-magnetization magnetic force microscopy (SM- MFM) method using planar tip-on-chip probes. Unlike traditional needle-like tips, the planar probe approach integrates a microdevice near the tip apex with dedicated functionality. Its 1 mm x 1 mm planar surface paves the way for freedom in ultra thin-film engineering and micro-/nano-tailoring for application-oriented tip functionalization. Here, we form a microscale current pathway near the tip end to control tip magnetisation. The chip like probe or planar probe, was applied to study the complex magnetic behaviour of epitaxial transition metal oxide perovskite LaMnO3, which was previously shown to behave as complex material with domains associated with superpara-, antiferro- and ferromagnetism. To this end we successfully imaged an inhomogeneous distribution of weak ferromagnetic islands with a resolution better than 10 nm. △ Less

Submitted 22 February, 2023; originally announced February 2023.

Comments: 36 pages, 13 Figures, 1 ToC

Broadband Multifunctional Plasmonic Polarization Converter based on Multimode Interference Coupler

Authors: Hamed Pezeshki, Bert Koopmans, Jos J. G. M. van der Tol

Abstract: We propose a multifunctional integrated plasmonic-photonic polarization converter for polarization demultiplexing in an indium-phosphide membrane on silicon platform. Using a compact 1$\times$4 multimode interference coupler, this device can provide simultaneous half-wave plate and quarter-wave plate (HWP and QWP) functionalities, where the latter generates two quasi-circular polarized beams with… ▽ More We propose a multifunctional integrated plasmonic-photonic polarization converter for polarization demultiplexing in an indium-phosphide membrane on silicon platform. Using a compact 1$\times$4 multimode interference coupler, this device can provide simultaneous half-wave plate and quarter-wave plate (HWP and QWP) functionalities, where the latter generates two quasi-circular polarized beams with opposite spins and topological charges of $l$ = $\pm$1. Our device employs a two-section HWP to obtain a very large conversion efficiency of $\geq$ 91% over the entire C to U telecom bands, while it offers a conversion efficiency of $\geq$ 95% over $\sim$ 86% of the C to U bands. Our device also illustrates QWP functionality, where the transmission contrast between the transverse electric and transverse magnetic modes is $\approx$ 0 dB over the whole C band and 55% of the C to U bands. We expect this device can be a promising building block for the realization of ultracompact on-chip polarization demultiplexing and lab-on-a-chip biosensing platforms. Finally, our proposed device allows the use of the polarization and angular momentum degrees of freedom, which makes it attractive for quantum information processing. △ Less

Submitted 20 October, 2022; originally announced October 2022.

Design of an integrated hybrid plasmonic-photonic device for all-optical switching and reading of spintronic memory

Authors: Hamed Pezeshki, **zhi Li, Reinoud Lavrijsen, Martijn Heck, Erwin Bente, Jos van der Tol, Bert Koopmans

Abstract: We introduce a novel integrated hybrid plasmonic-photonic device for all-optical switching and reading of nanoscale ferrimagnet bits. The racetrack memory made of synthetic ferrimagnetic material with a perpendicular magnetic anisotropy is coupled on to a photonic waveguide onto the indium phosphide membrane on silicon platform. The device which is composed of a double V-shaped gold plasmonic nano… ▽ More We introduce a novel integrated hybrid plasmonic-photonic device for all-optical switching and reading of nanoscale ferrimagnet bits. The racetrack memory made of synthetic ferrimagnetic material with a perpendicular magnetic anisotropy is coupled on to a photonic waveguide onto the indium phosphide membrane on silicon platform. The device which is composed of a double V-shaped gold plasmonic nanoantenna coupled with a photonic crystal cavity can enable switching and reading of the magnetization state in nanoscale magnetic bits by enhancing the absorbed energy density and polar magneto-optical Kerr effect (PMOKE) locally beyond the diffraction limit. Using a three-dimensional finite-difference time-domain method, we numerically show that our device can switch and read the magnetization state in targeted bits down to ~100 nm in the presence of oppositely magnetized background regions in the racetrack with widths of 30 to 120 nm, clearly outperforming a bare photonic waveguide. Our hybrid device tackles the challenges of nonlinear absorption in the waveguide, weak PMOKE, and size mismatch between spintronics and integrated photonics. Thus, it provides missing link between the integrated photonics and nanoscale spintronics, expediting the development of ultrafast and energy efficient advanced on-chip applications. △ Less

Submitted 30 September, 2022; originally announced September 2022.

Journal ref: Physical Review Applied 19.5 (2023): 054036

Optical Reading of Nanoscale Magnetic Bits in an Integrated Photonic Platform

Authors: Hamed Pezeshki, **zhi Li, Reinoud Lavrijsen, Jos J. G. M. van der Tol, Bert Koopmans

Abstract: In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic racetrack on top of a photonic waveguide on the indium phosphide membrane on silicon platform. The hybrid device is constructed by coupling a doublet of V-shaped gold plasmonic nanoantennas on top of the indium phosphide… ▽ More In this paper, we propose a compact integrated hybrid plasmonic-photonic device for optical reading of nanoscale magnetic bits with perpendicular magnetic anisotropy in a magnetic racetrack on top of a photonic waveguide on the indium phosphide membrane on silicon platform. The hybrid device is constructed by coupling a doublet of V-shaped gold plasmonic nanoantennas on top of the indium phosphide waveguide. By taking advantage of the localized surface plasmons, our hybrid device can enable detection of the magnetization state in magnetic bits beyond the diffraction limit of light and enhance the polar magneto-optical Kerr effect (PMOKE). We further illustrate how combining the hybrid device with a plasmonic polarization rotator provides magneto-optical read-out by transforming the PMOKE-induced polarization change into an intensity variation of the waveguide mode. According to the simulation results based on a three-dimensional finite-difference time-domain method, the hybrid device can detect the magnetization states in targeted bits in a magnetic racetrack medium down to ~ 100x100 nm2, regardless of the magnetization state of the rest of the racetrack with a relative intensity contrast of greater than 0.5% for a ~ 200x100 nm2 magnetic bit. We believe our hybrid device can be an enabling technology that can connect integrated photonics with nanoscale spintronics, paving the way toward ultrafast and energy efficient advanced on-chip applications. △ Less

Submitted 4 August, 2022; originally announced August 2022.

Journal ref: IEEE Journal of Quantum Electronics, vol. 59, no. 3, pp. 1-8, June 2023, Art no. 0600808

Substrate conformal imprint fabrication process of synthetic antiferromagnetic nanoplatelets

Authors: J. Li, P. van Nieuwkerk, M. A. Verschuuren, B. Koopmans, R. Lavrijsen

Abstract: Methods to fabricate and characterize monodisperse magnetic nanoplatelets for fluid/bio-based applications based on spintronic thin-film principles are a challenge. This is due to the required top-down approach where the transfer of optimized blanket films to free particles in a fluid while preserving the magnetic properties is an uncharted field. Here, we explore the use of substrate conformal im… ▽ More Methods to fabricate and characterize monodisperse magnetic nanoplatelets for fluid/bio-based applications based on spintronic thin-film principles are a challenge. This is due to the required top-down approach where the transfer of optimized blanket films to free particles in a fluid while preserving the magnetic properties is an uncharted field. Here, we explore the use of substrate conformal imprint lithography (SCIL) as a fast and cost-effective fabrication route. We analyze the size distribution of nominal 1.8 um and 120 nm diameter platelets and show the effect of the fabrication steps on the magnetic properties which we explain through changes in the dominant magnetization reversal mechanism as the size decreases. We show that SCIL allows for efficient large-scale platelet fabrication and discuss how application-specific requirements can be solved via process and material engineering. △ Less

Submitted 30 June, 2022; originally announced June 2022.

Field-free spin orbit torque switching of synthetic antiferromagnet through interlayer Dzyaloshinskii-Moriya interaction

Authors: Zilu Wang, **zhi Li, Yuxuan Yao, Youri L. W. Van Hees, Casper F. Schippers, Reinoud Lavrijsen, Albert Fert, Weisheng Zhao, Bert Koopmans

Abstract: Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the fiel… ▽ More Perpendicular synthetic antiferromagnets (SAFs) are of interest for the next generation ultrafast, high density spintronic memory and logic devices. However, to energy efficiently operate their magnetic order by current-induced spin orbit torques (SOTs), an unfavored high external field is conventionally required to break the symmetry. Here, we theoretically and experimentally demonstrate the field-free SOT switching of a perpendicular SAF through the introduction of interlayer Dzyaloshinskii-Moriya interaction (DMI). By macro-spin simulation, we show that the speed of field-free switching increases with the in-plane mirror asymmetry of injected spins. We experimentally observe the existence of interlayer DMI in our SAF sample by an azimuthal angular dependent anomalous Hall measurement. Field-free switching is accomplished in such a sample and the strength of the effective switching field demonstrates its origin from interlayer DMI. Our results provide a new strategy for SAF based high performance SOT devices. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Enhancing sensitivity in atomic force microscopy for planar tip-on-chip probes

Authors: H. Tunç Çiftçi, Michael Verhage, Tamar Cromwijk, Laurent Pham Van, Bert Koopmans, Kees Flipse, Oleg Kurnosikov

Abstract: We present a new approach to tuning fork-based atomic force microscopy for utilizing advanced "tip-on-chip" probes with high sensitivity and broad compatibility. Usually, such chip-like probes with a size reaching 2 mm x 2 mm drastically perturb the oscillation of the tuning fork, resulting in poor performance in its intrinsic force sensing. Therefore, restoring initial oscillatory characteristics… ▽ More We present a new approach to tuning fork-based atomic force microscopy for utilizing advanced "tip-on-chip" probes with high sensitivity and broad compatibility. Usually, such chip-like probes with a size reaching 2 mm x 2 mm drastically perturb the oscillation of the tuning fork, resulting in poor performance in its intrinsic force sensing. Therefore, restoring initial oscillatory characteristics is necessary for regaining high sensitivity. To this end, we developed a new approach consisting of three basic steps: tuning fork rebalancing, revam** holder-sensor fixation, and electrode reconfiguration. Mass rebalancing allows the tuning fork to recover the frequency and regain high Q-factor values up to 10E4 in air and up to 4 x 10E4 in ultra-high vacuum conditions. The floating-like holder-fixation using soft wires significantly reduces energy dissipation from the mounting elements. Combined with the soft wires, reconfigured electrodes provide electrical access to the chip-like probe without intervening in the force-sensing signal. Finally, our easy-to-implement approach allows converting the atomic force microscopy-tip from a passive tool to a dedicated microdevice with extended functionality. △ Less

Submitted 18 May, 2022; v1 submitted 2 February, 2022; originally announced February 2022.

Comments: 11 pages including references, 8 figures

Journal ref: Microsyst Nanoeng 8, 51 (2022)

Ultra-low energy threshold engineering for all-optical switching of magnetization in dielectric-coated Co/Gd based synthetic-ferrimagnet

Authors: **zhi Li, Mark J. G. Peeters, Youri L. W. van Hees, Reinoud Lavrijsen, Bert Koopmans

Abstract: A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, a large portion of the light energy is lost by reflection from the metal thin film as well as transmission to the substrate. In this paper, we… ▽ More A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory applications. However, a large portion of the light energy is lost by reflection from the metal thin film as well as transmission to the substrate. In this paper, we explore the use of dielectric coatings to increase the light absorption by the magnetic metal layer based on the principle of constructive interference. We experimentally show that the switching energy oscillates with the dielectric layer thickness following the light interference profile as obtained from theoretical calculations. Furthermore, the switching threshold fluence can be reduced by at least $80\%$ to 0.6 mJ/cm$^2$ using two dielectric SiO$_2$ layers sandwiching the metal stack, which scales to 15 fJ of incident energy for a cell size of $50^2$ nm$^2$. △ Less

Submitted 22 October, 2021; originally announced October 2021.

All-optical switching of magnetic domains in Co/Gd heterostructures with Dzyaloshinskii-Moriya Interaction

Authors: Anni Cao, Youri L. W. van Hees, Reinoud Lavrijsen, Weisheng Zhao, Bert Koopmans

Abstract: Given the development of hybrid spintronic-photonic devices and chiral magnetic structures, a combined interest in all-optical switching (AOS) of magnetization and current-induced domain wall motion in synthetic ferrimagnetic structures with strong Dzyaloshinskii-Moriya Interaction (DMI) is emerging. In this study, we report a study on single-pulse all-optical toggle switching and asymmetric bubbl… ▽ More Given the development of hybrid spintronic-photonic devices and chiral magnetic structures, a combined interest in all-optical switching (AOS) of magnetization and current-induced domain wall motion in synthetic ferrimagnetic structures with strong Dzyaloshinskii-Moriya Interaction (DMI) is emerging. In this study, we report a study on single-pulse all-optical toggle switching and asymmetric bubble expansion in specially engineered Co/Gd-based multilayer structures. In the absence of any external magnetic fields, we look into the AOS properties and the potential role of the DMI on the AOS process as well as the stability of optically written micro-magnetic domains. Particularly, interesting dynamics are observed in moon-shaped structures written by two successive laser pulses. The stability of domains resulting from an interplay of the dipolar interaction and domain-wall energy are compared to simple analytical models and micromagnetic simulations. △ Less

Submitted 25 May, 2020; v1 submitted 16 May, 2020; originally announced May 2020.

Journal ref: Phys. Rev. B 102, 104412 (2020)

Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers

Authors: Luding Wang, Youri L. W. van Hees, Reinoud Lavrijsen, Weisheng Zhao, Bert Koopmans

Abstract: All optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with spintronic devices, such as magnetic tunnel junctions (MTJs), to enable ultrafast memory applications. Post-annealing is an essential process in the MTJ fabrication to obtain optimized tunnel magnetoresistance (TMR) ratio.… ▽ More All optical switching (AOS) of the magnetization in synthetic ferrimagnetic Pt/Co/Gd stacks has received considerable interest due to its high potential towards integration with spintronic devices, such as magnetic tunnel junctions (MTJs), to enable ultrafast memory applications. Post-annealing is an essential process in the MTJ fabrication to obtain optimized tunnel magnetoresistance (TMR) ratio. However, with integrating AOS with an MTJ in prospect, the annealing effects on single-pulse AOS and domain wall (DW) dynamics in the Pt/Co/Gd stacks haven't been systematically investigated yet. In this study, we experimentally explore the annealing effect on AOS and field-induced DW motion in Pt/Co/Gd stacks. The results show that the threshold fluence (F_0) for AOS is reduced significantly as a function of annealing temperature (T_a) ranging from 100C to 300C. Specifically, a 28% reduction of F_0 can be observed upon annealing at 300C, which is a critical T_a for MTJ fabrication. Lastly, we also demonstrate a significant increase of the DW velocity in the creep regime upon annealing, which is attributed to annealing-induced Co/Gd interface intermixing. Our findings show that annealed Pt/Co/Gd system facilitates ultrafast and energy-efficient AOS, as well as enhanced DW velocity, which is highly suitable towards opto-spintronic memory applications. △ Less

Submitted 8 May, 2020; originally announced May 2020.

Comments: 17 pages, 10 figures

Integrating all-optical switching with spintronics

Authors: Mark L. M. Lalieu, Reinoud Lavrijsen, Bert Koopmans

Abstract: All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using short (femtosecond) laser pulses, and has been observed in a variety of materials. In the past decade it received extensive attention due to its high potential for fast and energy-efficient data writing in future spintronic memory applications. Unfortunately, the AOS mechanism in the ferromagnetic m… ▽ More All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using short (femtosecond) laser pulses, and has been observed in a variety of materials. In the past decade it received extensive attention due to its high potential for fast and energy-efficient data writing in future spintronic memory applications. Unfortunately, the AOS mechanism in the ferromagnetic multilayers commonly used in spintronics needs multiple pulses for the magnetization reversal, losing its speed and energy efficiency. Here, we experimentally demonstrate `on-the-fly' single-pulse AOS in combination with spin Hall effect (SHE) driven motion of magnetic domains in Pt/Co/Gd synthetic-ferrimagnetic racetracks. Moreover, using field-driven-SHE-assisted domain wall (DW) motion measurements, both the SHE efficiency in the racetrack is determined and the chirality of the optically written DW's is verified. Our experiments demonstrate that Pt/Co/Gd racetracks facilitate both single-pulse AOS as well as efficient SHE induced domain wall motion, which might ultimately pave the way towards integrated photonic memory devices. △ Less

Submitted 7 September, 2018; originally announced September 2018.

Anomalous direction for skyrmion bubble motion

Authors: Fanny C. Ummelen, Tijs A. Wijkamp, Tom Lichtenberg, Rembert A. Duine, Bert Koopmans, Henk J. M. Swagten, Reinoud Lavrijsen

Abstract: Magnetic skyrmions are localized topological excitations that behave as particles and can be mobile, with great potential for novel data storage devices. In this work, the current-induced dynamics of large skyrmion bubbles is studied. When skyrmion motion in the direction opposite to the electron flow is observed, this is usually interpreted as a perpendicular spin current generated by the spin Ha… ▽ More Magnetic skyrmions are localized topological excitations that behave as particles and can be mobile, with great potential for novel data storage devices. In this work, the current-induced dynamics of large skyrmion bubbles is studied. When skyrmion motion in the direction opposite to the electron flow is observed, this is usually interpreted as a perpendicular spin current generated by the spin Hall effect exerting a torque on the chiral Néel skyrmion. By designing samples in which the direction of the net generated spin current can be carefully controlled, we surprisingly show that skyrmion motion is always against the electron flow, irrespective of the net vertical spin-current direction. We find that a negative bulk spin-transfer torque is the most plausible explanation for the observed results, which is qualitatively justified by a simple model that captures the essential behaviour. These findings demonstrate that claims about the skyrmion chirality based on their current-induced motion should be taken with great caution. △ Less

Submitted 19 July, 2018; originally announced July 2018.

Tuning the Dzyaloshinskii-Moriya Interaction in Pt/Co/MgO heterostructures through MgO thickness

Authors: Anni Cao, Xueying Zhang, Bert Koopmans, Shouzhong Peng, Yu Zhang, Zilu Wang, Shaohua Yan, Hongxin Yang, Weisheng Zhao

Abstract: The interfacial Dzyaloshinskii-Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures , has attracted a lot of attention thanks to its capability to stabilize Neel-type domain walls (DWs) and magnetic skyrmions for the realization of non-volatile memory and logic devices. In this study, we demonstrate that magnetic properties in perpendicularly magnetized Ta/Pt/Co/MgO… ▽ More The interfacial Dzyaloshinskii-Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures , has attracted a lot of attention thanks to its capability to stabilize Neel-type domain walls (DWs) and magnetic skyrmions for the realization of non-volatile memory and logic devices. In this study, we demonstrate that magnetic properties in perpendicularly magnetized Ta/Pt/Co/MgO/Pt heterostructures, such as magnetization and DMI, can be significantly influenced through both the MgO and the Co ultrathin film thickness. By using a field-driven creep regime domain expansion technique, we find that non-monotonic tendencies of DMI field appear when changing the thickness of MgO and the MgO thickness corresponding to the largest DMI field varies as a function of the Co thicknesses. We interpret this efficient control of DMI as subtle changes of both Pt/Co and Co/MgO interfaces, which provide a method to investigate ultra-thin structures design to achieve skyrmion electronics. △ Less

Submitted 2 April, 2018; v1 submitted 24 October, 2017; originally announced October 2017.

Comments: 18 pages, 11 figures