Photoinduced tunability of the Reststrahlen band in 4H-SiC
Authors:
Bryan T. Spann,
Ryan Compton,
Daniel Ratchford,
James P. Long,
Adam D. Dunkelberger,
Paul B. Klein,
Alexander J. Giles,
Joshua D. Caldwell,
Jeffrey C. Owrutsky
Abstract:
Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to $actively$ tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the "Reststrahlen band" wher…
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Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to $actively$ tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the "Reststrahlen band" where the permittivity is negative due to charge oscillations of the polar optical phonons in the mid-infrared. We infer carrier-induced changes in the permittivity required for useful tunability (~ 40 cm$^{-1}$) in nanoscale resonators, providing a direct avenue towards the realization of actively tunable nanophotonic devices in the mid-infrared to terahertz spectral range.
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Submitted 30 November, 2015;
originally announced November 2015.
