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Single Event Tolerance of X-ray SOI Pixel Sensors
Authors:
Kouichi Hagino,
Mitsuki Hayashida,
Takayoshi Kohmura,
Toshiki Doi,
Shun Tsunomachi,
Masatoshi Kitajima,
Takeshi G. Tsuru,
Hiroyuki Uchida,
Kazuho Kayama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Masataka Yukumoto,
Kira Mieda,
Syuto Yonemura,
Tatsunori Ishida,
Takaaki Tanaka,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cr…
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We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.
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Submitted 10 October, 2022;
originally announced October 2022.
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Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure
Authors:
Mitsuki Hayashida,
Kouichi Hagino,
Takayoshi Kohmura,
Masatoshi Kitajima,
Keigo Yarita,
Kenji Oono,
Kousuke Negishi,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-…
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X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
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Submitted 11 August, 2021;
originally announced August 2021.
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Performance evaluation of the aerogel RICH counter for the Belle II spectrometer using early beam collision data
Authors:
M. Yonenaga,
I. Adachi,
L. Burmistrov,
F. Le Diberder,
T. Iijima,
S. Iwata,
S. Kakimoto,
H. Kakuno,
G. Karyan,
H. Kawai,
T. Kawasaki,
H. Kindo,
H. Kitamura,
M. Kobayashi,
T. Kohriki,
T. Konno,
S. Korpar,
P. Križan,
T. Kumita,
K. Kuze,
Y. Lai,
M. Mrvar,
G. Nazaryan,
S. Nishida,
M. Nishimura
, et al. (10 additional authors not shown)
Abstract:
The Aerogel Ring Imaging Cherenkov (ARICH) counter serves as a particle identification device in the forward end-cap region of the Belle II spectrometer. It is capable of identifying pions and kaons with momenta up to $4 \, {\rm GeV}/c$ by detecting Cherenkov photons emitted in the silica aerogel radiator. After the detector alignment and calibration of the probability density function, we evaluat…
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The Aerogel Ring Imaging Cherenkov (ARICH) counter serves as a particle identification device in the forward end-cap region of the Belle II spectrometer. It is capable of identifying pions and kaons with momenta up to $4 \, {\rm GeV}/c$ by detecting Cherenkov photons emitted in the silica aerogel radiator. After the detector alignment and calibration of the probability density function, we evaluate the performance of the ARICH counter using early beam collision data. Event samples of $D^{\ast +} \to D^0 π^+ (D^0 \to K^-π^+)$ were used to determine the $π(K)$ efficiency and the $K(π)$ misidentification probability. We found that the ARICH counter is capable of separating kaons from pions with an identification efficiency of $93.5 \pm 0.6 \, \%$ at a pion misidentification probability of $10.9 \pm 0.9 \, \%$. This paper describes the identification method of the counter and the evaluation of the performance during its early operation.
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Submitted 14 August, 2020;
originally announced August 2020.
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Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy
Authors:
Kouichi Hagino,
Keigo Yarita,
Kousuke Negishi,
Kenji Oono,
Mitsuki Hayashida,
Masatoshi Kitajima,
Takayoshi Kohmura,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Yuki Amano,
Ryota Kodama,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Masataka Yukumoto,
Takahiro Hida,
Yasuo Arai,
Ikuo Kurachi,
Tsuyoshi Hamano,
Hisashi Kitamura
Abstract:
The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the…
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The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.
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Submitted 16 July, 2020;
originally announced July 2020.
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Single event effect characterization of the mixed-signal ASIC developed for CCD camera in space use
Authors:
Hiroshi Nakajima,
Mari Fujikawa,
Hideki Mori,
Hiroaki Kan,
Shutaro Ueda,
Hiroko Kosugi,
Naohisa Anabuki,
Kiyoshi Hayashida,
Hiroshi Tsunemi,
John P. Doty,
Hirokazu Ikeda,
Hisashi Kitamura,
Yukio Uchihori
Abstract:
We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion beams at HIMAC/NIRS in Japan. The particles with high linear energy transfer (LET) of 57.9 MeV cm^{2}/mg is used to measure the single event latch-up (SEL) tolera…
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We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion beams at HIMAC/NIRS in Japan. The particles with high linear energy transfer (LET) of 57.9 MeV cm^{2}/mg is used to measure the single event latch-up (SEL) tolerance, which results in a sufficiently low cross-section of sigma_{SEL} < 4.2x10^{-11} cm^{2}/(IonxASIC). The single event upset (SEU) tolerance is estimated with various kinds of species with wide range of energy. Taking into account that a part of the protons creates recoiled heavy ions that has higher LET than that of the incident protons, we derived the probability of SEU event as a function of LET. Then the SEE event rate in a low-earth orbit is estimated considering a simulation result of LET spectrum. SEL rate is below once per 49 years, which satisfies the required latch-up tolerance. The upper limit of the SEU rate is derived to be 1.3x10^{-3}events/sec. Although the SEU events cannot be distinguished from the signals of X-ray photons from astronomical objects, the derived SEU rate is below 1.3% of expected non-X-ray background rate of the detector and hence these events should not be a major component of the instrumental background.
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Submitted 11 July, 2013;
originally announced July 2013.
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Development of the analog ASIC for multi-channel readout X-ray CCD camera
Authors:
Hiroshi Nakajima,
Daisuke Matsuura,
Toshihiro Idehara,
Naohisa Anabuki,
Hiroshi Tsunemi,
John P. Doty,
Hirokazu Ikeda,
Haruyoshi Katayama,
Hisashi Kitamura,
Yukio Uchihori
Abstract:
We report on the performance of an analog application-specific integrated circuit (ASIC) developed aiming for the front-end electronics of the X-ray CCDcamera system onboard the next X-ray astronomical satellite, ASTRO-H. It has four identical channels that simultaneously process the CCD signals. Distinctive capability of analog-to-digital conversion enables us to construct a CCD camera body that…
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We report on the performance of an analog application-specific integrated circuit (ASIC) developed aiming for the front-end electronics of the X-ray CCDcamera system onboard the next X-ray astronomical satellite, ASTRO-H. It has four identical channels that simultaneously process the CCD signals. Distinctive capability of analog-to-digital conversion enables us to construct a CCD camera body that outputs only digital signals. As the result of the front-end electronics test, it works properly with low input noise of =<30 uV at the pixel rate below 100 kHz. The power consumption is sufficiently low of about 150 mW/chip. The input signal range of 720 mV covers the effective energy range of the typical X-ray photon counting CCD (up to 20 keV). The integrated non-linearity is 0.2% that is similar as those of the conventional CCDs in orbit. We also performed a radiation tolerance test against the total ionizing dose (TID) effect and the single event effect. The irradiation test using 60Co and proton beam showed that the ASIC has the sufficient tolerance against TID up to 200 krad, which absolutely exceeds the expected amount of dose during the period of operating in a low-inclination low-earth orbit. The irradiation of Fe ions with the fluence of 5.2x10^8 Ion/cm2 resulted in no single event latchup (SEL), although there were some possible single event upsets. The threshold against SEL is higher than 1.68 MeV cm^2/mg, which is sufficiently high enough that the SEL event should not be one of major causes of instrument downtime in orbit.
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Submitted 11 February, 2011;
originally announced February 2011.
