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Anisotropy of Antiferromagnetic Domains in a Spin-orbit Mott Insulator
Authors:
Longlong Wu,
Wei Wang,
Tadesse A. Assefa,
Ana F. Suzana,
Jiecheng Diao,
Hengdi Zhao,
Gang Cao,
Ross J. Harder,
Wonsuk Cha,
Kim Kisslinger,
Mark P. M. Dean,
Ian K. Robinson
Abstract:
The temperature-dependent behavior of magnetic domains plays an essential role in the magnetic properties of materials, leading to widespread applications. However, experimental methods to access the three-dimensional (3D) magnetic domain structures are very limited, especially for antiferromagnets. Over the past decades, the spin-orbit Mott insulator iridate $Sr_2IrO_4$ has attracted particular a…
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The temperature-dependent behavior of magnetic domains plays an essential role in the magnetic properties of materials, leading to widespread applications. However, experimental methods to access the three-dimensional (3D) magnetic domain structures are very limited, especially for antiferromagnets. Over the past decades, the spin-orbit Mott insulator iridate $Sr_2IrO_4$ has attracted particular attention because of its interesting magnetic structure and analogy to superconducting cuprates. Here, we apply resonant x-ray magnetic Bragg coherent diffraction imaging to track the real-space 3D evolution of antiferromagnetic ordering inside a $Sr_2IrO_4$ single crystal as a function of temperature, finding that the antiferromagnetic domain shows anisotropic changes. The anisotropy of the domain shape reveals the underlying anisotropy of the antiferromagnetic coupling strength within $Sr_2IrO_4$. These results demonstrate the high potential significance of 3D domain imaging in magnetism research.
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Submitted 16 September, 2023;
originally announced September 2023.
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Microwave loss characterization using multi-mode superconducting resonators
Authors:
Chan U Lei,
Suhas Ganjam,
Lev Krayzman,
Archan Banerjee,
Kim Kisslinger,
Sooyeon Hwang,
Luigi Frunzio,
Robert J. Schoelkopf
Abstract:
Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials…
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Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We demonstrate a formalism for analyzing the loss sensitivity of multi-mode systems and discuss the design strategies of multi-mode resonators for material loss studies. We present two types of multi-mode superconducting resonators for the study of bulk superconductors: the forky whispering-gallery-mode resonator (FWGMR) and the ellipsoidal cavity. We use these resonators to measure the surface dielectric, conductor, and seam losses of high-purity (5N5) aluminum and aluminum alloy (6061), as well as how they are affected by chemical etching, diamond turning, and thin-film coating. We find that chemical etching and diamond turning reduce both the surface dielectric and conductive losses of high-purity aluminum, but provide no appreciable improvement to the seam. Coating the surfaces of diamond-turned aluminum alloys with e-beam evaporated or sputtered aluminum thin-films significantly reduces all three losses under study. In addition, we study the effect of chemical etching on the surface of high-purity aluminum using transmission electron microscopy (TEM) and find that the chemical etching process creates a thinner and more uniform oxide layer, consistent with the observed improvement in the surface dielectric loss.
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Submitted 2 May, 2023;
originally announced May 2023.
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Wafer-scale growth of two-dimensional, phase-pure InSe
Authors:
Seunguk Song,
Sungho Jeon,
Mahfujur Rahaman,
Jason Lynch,
Pawan Kumar,
Srikrishna Chakravarthi,
Gwangwoo Kim,
Xingyu Du,
Eric Blanton,
Kim Kisslinger,
Michael Snure,
Nicholas R. Glavin,
Eric A. Stach,
Roy H. Olsson,
Deep Jariwala
Abstract:
Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the d…
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Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers. We achieve thickness-controlled, layer-by-layer epitaxial growth of InSe on c-plane sapphire via dynamic pulse control of Se/In flux ratio. The layer-by-layer growth allows thickness control over wafer scale with tunable optical properties comparable to bulk crystals. Finally, the gate-tunable electrical transport suggests that MOCVD-grown InSe could be a potential channel material for back-end-of-line integration in logic transistors with field-effect mobility comparable to single-crystalline flakes.
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Submitted 4 March, 2023;
originally announced March 2023.
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Reconfigurable Compute-In-Memory on Field-Programmable Ferroelectric Diodes
Authors:
Xiwen Liu,
John Ting,
Yunfei He,
Merrilyn Mercy Adzo Fiagbenu,
Jeffrey Zheng,
Dixiong Wang,
Jonathan Frost,
Pariasadat Musavigharavi,
Giovanni Esteves,
Kim Kisslinger,
Surendra B. Anantharaman,
Eric A. Stach,
Roy H. Olsson III,
Deep Jariwala
Abstract:
The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low-power memory units with Si logic-processor units. However, data-heavy problems such as search and pattern matching also require paradigm changing inn…
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The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data centric processing. At a hardware level, this presents an urgent need to integrate dense, high-performance and low-power memory units with Si logic-processor units. However, data-heavy problems such as search and pattern matching also require paradigm changing innovations at the circuit and architecture level to enable compute in memory (CIM) operations. CIM architectures that combine data storage yet concurrently offer low-delay and small footprint are highly sought after but have not been realized. Here, we present Aluminum Scandium Nitride (AlScN) ferroelectric diode (FeD) memristor devices that allow for storage, search and neural network-based pattern recognition in a transistor-free architecture. Our devices can be directly integrated on top of Si processors in a scalable, back-end-of-line process. We leverage the field-programmability, non-volatility and non-linearity of FeDs to demonstrated circuit blocks that can support search operations in-situ memory with search delay times < 0.1 ns and a cell footprint < 0.12 um^2. In addition, we demonstrate matrix multiplication operations with 4-bit operation of the FeDs. Our results highlight FeDs as promising candidates for fast, efficient, and multifunctional CIM platforms.
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Submitted 10 February, 2022;
originally announced February 2022.
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Direct Opto-Electronic Imaging of 2D Semiconductor - 3D Metal Buried Interfaces
Authors:
Kiyoung Jo,
Pawan Kumar,
Joseph Orr,
Surendra B. Anantharaman,
**shui Miao,
Michael Motala,
Arkamita Bandyopadhyay,
Kim Kisslinger,
Christopher Muratore,
Vivek B. Shenoy,
Eric Stach,
Nicholas Glavin,
Deep Jariwala
Abstract:
The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal…
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The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate do** of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.
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Submitted 28 January, 2021;
originally announced January 2021.
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Approaching the Practical Conductivity Limits of Aerosol Jet Printed Silver
Authors:
Eva S. Rosker,
Michael T. Barako,
Evan Nguyen,
Don DiMarzio,
Kim Kisslinger,
Dah-Weih Duan,
Ra**der Sandhu,
Mark S. Goorsky,
Jesse Tice
Abstract:
Previous efforts to directly write conductive metals have been narrowly focused on nanoparticle ink suspensions that require aggressive sintering (>200 °C) and result in low-density, small-grained agglomerates with electrical conductivities <25% of bulk metal. Here, we demonstrate aerosol jet printing of a reactive ink solution and characterize high-density (93%) printed silver traces having near-…
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Previous efforts to directly write conductive metals have been narrowly focused on nanoparticle ink suspensions that require aggressive sintering (>200 °C) and result in low-density, small-grained agglomerates with electrical conductivities <25% of bulk metal. Here, we demonstrate aerosol jet printing of a reactive ink solution and characterize high-density (93%) printed silver traces having near-bulk conductivity and grain sizes greater than the electron mean free path, while only requiring a low-temperature (80 °C) treatment. We have developed a predictive electronic transport model which correlates the microstructure to the measured conductivity and identifies a strategy to approach the practical conductivity limit for printed metals. Our analysis of how grain boundaries and tortuosity contribute to electrical resistivity provides insight into the basic materials science that governs how an ink formulator or process developer might approach improving the conductivity. Transmission line measurements validate that electrical properties are preserved up to 20 GHz, which demonstrates the utility of this technique for printed RF components. This work reveals a new method of producing robust printed electronics that retain the advantages of rapid prototy** and three-dimensional fabrication while achieving the performance necessary for success within the aerospace and communications industries.
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Submitted 13 July, 2020;
originally announced July 2020.
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Microscopic Relaxation Channels in Materials for Superconducting Qubits
Authors:
Anjali Premkumar,
Conan Weiland,
Sooyeon Hwang,
Berthold Jaeck,
Alexander P. M. Place,
Iradwikanari Waluyo,
Adrian Hunt,
Valentina Bisogni,
Jonathan Pelliciari,
Andi Barbour,
Mike S. Miller,
Paola Russo,
Fernando Camino,
Kim Kisslinger,
Xiao Tong,
Mark S. Hybertsen,
Andrew A. Houck,
Ignace Jarrige
Abstract:
Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabr…
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Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabrication. By comparing results for films deposited using three techniques, we reveal correlations between $T_1$ and grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Physical mechanisms connect these microscopic properties to residual surface resistance and $T_1$ through losses arising from the grain boundaries and from defects in the suboxides. Further, experiments show that the residual resistance ratio can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.
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Submitted 6 April, 2020;
originally announced April 2020.
