Showing 1–8 of 8 results for author: Khan, A I

Non-volatile Phase-only Transmissive Spatial Light Modulators

Authors: Zhuoran Fang, Rui Chen, Johannes E. Fröch, Quentin A. A. Tanguy, Asir Intisar Khan, Xiang** Wu, Virat Tara, Arnab Manna, David Sharp, Christopher Munley, Forrest Miller, Yang Zhao, Sarah J. Geiger, Karl F. Böhringer, Matthew Reynolds, Eric Pop, Arka Majumdar

Abstract: Free-space modulation of light is crucial for many applications, from light detection and ranging to virtual or augmented reality. Traditional means of modulating free-space light involves spatial light modulators based on liquid crystals and microelectromechanical systems, which are bulky, have large pixel areas (~10 micron x 10 micron), and require high driving voltage. Recent progress in meta-o… ▽ More Free-space modulation of light is crucial for many applications, from light detection and ranging to virtual or augmented reality. Traditional means of modulating free-space light involves spatial light modulators based on liquid crystals and microelectromechanical systems, which are bulky, have large pixel areas (~10 micron x 10 micron), and require high driving voltage. Recent progress in meta-optics has shown promise to circumvent some of the limitations. By integrating active materials with sub-wavelength pixels in a meta-optic, the power consumption can be dramatically reduced while achieving a faster speed. However, these reconfiguration methods are volatile and hence require constant application of control signals, leading to phase jitter and crosstalk. Additionally, to control a large number of pixels, it is essential to implement a memory within each pixel to have a tractable number of control signals. Here, we develop a device with nonvolatile, electrically programmable, phase-only modulation of free-space infrared radiation in transmission using the low-loss phase-change material (PCM) Sb2Se3. By coupling an ultra-thin PCM layer to a high quality (Q)-factor (Q~406) diatomic metasurface, we demonstrate a phase-only modulation of ~0.25pi (~0.2pi) in simulation (experiment), ten times larger than a bare PCM layer of the same thickness. The device shows excellent endurance over 1,000 switching cycles. We then advance the device geometry, to enable independent control of 17 meta-molecules, achieving ten deterministic resonance levels with a 2pi phase shift. By independently controlling the phase delay of pixels, we further show tunable far-field beam sha**. Our work paves the way to realizing non-volatile transmissive phase-only spatial light modulators. △ Less

Submitted 22 July, 2023; originally announced July 2023.

Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $Ge_2Sb_2Te_5$ Thermal Barrier

Authors: Raisul Islam, Shengjun Qin, Sanchit Deshmukh, Zhouchangwan Yu, Cagil Koroglu, Asir Intisar Khan, Kirstin Schauble, Krishna C. Saraswat, Eric Pop, H. -S. Philip Wong

Abstract: Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between… ▽ More Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of $HfO_x$-based conventional RRAM often yields only two stable memory states instead of gradual switching between multiple resistance states. Here, we demonstrate that a thermal barrier of $Ge_2Sb_2Te_5$ (GST) between $HfO_x$ and the bottom electrode (TiN) enables wider and weaker filaments, by promoting heat spreading laterally inside the $HfO_x$. Scanning thermal microscopy suggests that $HfO_x+GST$ devices have a wider heating region than control devices with only $HfO_x$, indicating the formation of a wider filament. Such wider filaments can have multiple stable conduction paths, resulting in a memory device with more gradual and linear switching. The thermally-enhanced $HfO_x+GST$ devices also have higher on/off ratio ($>10^3$) than control devices ($<10^2$), and a median set voltage lower by approximately 1 V (~35%), with a corresponding reduction of the switching power. Our $HfO_x+GST$ RRAM shows 2x gradual switching range using fast (~ns) identical pulse trains with amplitude less than 2 V. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Machine Learning Application for $\mathbfΛ$ Hyperon Reconstruction in CBM at FAIR

Authors: Shahid Khan, Viktor Klochkov, Olha Lavoryk, Oleksii Lubynets, Ali Imdad Khan, Andrea Dubla, Ilya Selyuzhenkov

Abstract: The Compressed Baryonic Matter experiment at FAIR will investigate the QCD phase diagram in the region of high net-baryon densities. Enhanced production of strange baryons, such as the most abundantly produced $Λ$ hyperons, can signal transition to a new phase of the QCD matter. In this work, the CBM performance for reconstruction of the $Λ$ hyperon via its decay to proton and $π^{-}$ is presented… ▽ More The Compressed Baryonic Matter experiment at FAIR will investigate the QCD phase diagram in the region of high net-baryon densities. Enhanced production of strange baryons, such as the most abundantly produced $Λ$ hyperons, can signal transition to a new phase of the QCD matter. In this work, the CBM performance for reconstruction of the $Λ$ hyperon via its decay to proton and $π^{-}$ is presented. Decay topology reconstruction is implemented in the Particle-Finder Simple (PFSimple) package with Machine Learning algorithms providing efficient selection of the decays and high signal to background ratio. △ Less

Submitted 30 August, 2021; originally announced September 2021.

Enhanced Meta-Displays Using Advanced Phase-Change Materials

Authors: Omid Hemmatyar, Sajjad Abdollahramezani, Ioannis Zeimpekis, Sergey Lepeshov, Alex Krasnok, Asir Intisar Khan, Kathryn M. Neilson, Christian Teichrib, Tyler Brown, Eric Pop, Daniel W. Hewak, Matthias Wuttig, Andrea Alu, Otto L. Muskens, Ali Adibi

Abstract: Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these structure-dependent colors lack post-fabrication tunability. This hinders their applicability for front-end dynamic display technologies. Phase-change… ▽ More Structural colors generated due to light scattering from static all-dielectric metasurfaces have successfully enabled high-resolution, high-saturation, and wide-gamut color printing applications. Despite recent advances, most demonstrations of these structure-dependent colors lack post-fabrication tunability. This hinders their applicability for front-end dynamic display technologies. Phase-change materials (PCMs), with significant contrast of their optical properties between their amorphous and crystalline states, have demonstrated promising potentials in reconfigurable nanophotonics. Herein, we leverage tunable all-dielectric reflective metasurfaces made of newly emerged classes of low-loss optical PCMs, i.e., antimony trisulphide (Sb$_2$S$_3$) and antimony triselenide (Sb$_2$Se$_3$), with superb characteristics to realize switchable, high-saturation, high-efficiency and high-resolution dynamic meta-pixels. Exploiting polarization-sensitive building blocks, the presented meta-pixel can generate two different colors when illuminated by either one of two orthogonally polarized incident beams. Such degrees of freedom (i.e., material phase and polarization state) enable a single reconfigurable metasurface with fixed geometrical parameters to generate four distinct wide-gamut colors. We experimentally demonstrate, for the first time, an electrically-driven micro-scale display through the integration of phase-change metasurfaces with an on-chip heater formed by transparent conductive oxide. Our experimental findings enable a versatile platform suitable for a wide range of applications, including tunable full-color printing, enhanced dynamic displays, information encryption, and anti-counterfeiting. △ Less

Submitted 19 July, 2021; originally announced July 2021.

Comments: arXiv admin note: substantial text overlap with arXiv:2105.01313

Lateral Transport and Field-Effect Characteristics of Sputtered P-Type Chalcogenide Thin Films

Authors: Sumaiya Wahid, Alwin Daus, Asir Intisar Khan, Victoria Chen, Kathryn M. Neilson, Mahnaz Islam, Eric Pop

Abstract: Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral tra… ▽ More Investigating lateral electrical transport in p-type thin film chalcogenides is important to evaluate their potential for field-effect transistors (FETs) and phase-change memory applications. For instance, p-type FETs with sputtered materials at low temperature (<= 250 C) could play a role in flexible electronics or back-end-of-line (BEOL) silicon-compatible processes. Here, we explore lateral transport in chalcogenide films (Sb2Te3, Ge2Sb2Te5, Ge4Sb6Te7) and multilayers, with Hall measurements (in <= 50 nm thin films) and with p-type transistors (in <= 5 nm ultrathin films). The highest Hall mobilities are measured for Sb2Te3/GeTe superlattices (~18 cm2/V/s at room temperature), over 2-3x higher than the other films. In ultrathin p-type FETs with Ge2Sb2Te5, we achieve field-effect mobility up to ~5.5 cm2/V/s with current on/off ratio ~10000, the highest for Ge2Sb2Te5 transistors to date. We also explore process optimizations (e.g., AlOx cap** layer, type of developer for lithography) and uncover their trade-offs towards the realization of p-type transistors with acceptable mobility and on/off current ratio. Our study provides essential insights into the optimization of electronic devices based on p-type chalcogenides. △ Less

Submitted 17 July, 2021; originally announced July 2021.

Antiferroelectric negative capacitance from a structural phase transition in zirconia

Authors: Michael Hoffmann, Zheng Wang, Nujhat Tasneem, Ahmad Zubair, Prasanna Venkat Ravindran, Mengkun Tian, Anthony Gaskell, Dina Triyoso, Steven Consiglio, Kanda Tapily, Robert Clark, Jae Hur, Sai Surya Kiran Pentapati, Milan Dopita, Shimeng Yu, Winston Chern, Josh Kacher, Sebastian E. Reyes-Lillo, Dimitri Antoniadis, Jayakanth Ravichandran, Stefan Slesazeck, Thomas Mikolajick, Asif Islam Khan

Abstract: Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are diffe… ▽ More Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO$_2$ and ZrO$_2$) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO$_2$ gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically 'forbidden' region of the antiferroelectric transition in ZrO$_2$ and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions. △ Less

Submitted 21 April, 2021; originally announced April 2021.

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

Authors: Zhongyuan Lu, Claudy Serrao, Asif I. Khan, James D. Clarkson, Justin C. Wong, Ramamoorthy Ramesh, Sayeef Salahuddin

Abstract: We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS$_2$ transistor. A single crystalline, epitaxially grown, PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT) was placed in the gate of a field effect transistor made of thin film MoS$_2$. When a gate voltage is applied to this ferroelectric gated transistor, a clear transition from insulator to metal and vice versa is ob… ▽ More We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS$_2$ transistor. A single crystalline, epitaxially grown, PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT) was placed in the gate of a field effect transistor made of thin film MoS$_2$. When a gate voltage is applied to this ferroelectric gated transistor, a clear transition from insulator to metal and vice versa is observed. Importantly, when the gate voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS$_2$ in its original phase, thereby providing a non-volatile state. Thus a metallic or insulating phase can be written, erased or retained simply by applying a gate voltage to the transistor. △ Less

Submitted 24 July, 2017; v1 submitted 17 May, 2017; originally announced May 2017.

Non Volatile MoS$_{2}$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

Authors: Zhongyuan Lu, Claudy Serrao, Asif Islam Khan, Long You, Justin C. Wong, Yu Ye, Hanyu Zhu, Xiang Zhang, Sayeef Salahuddin

Abstract: We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19 $μA/μ$m), high on-off ratio (10$^{7}$), and a subthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polar… ▽ More We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19 $μA/μ$m), high on-off ratio (10$^{7}$), and a subthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have selfconsistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces and therefore it should be possible to integrate 2D electronics with single crystalline functional oxides. △ Less

Submitted 24 July, 2017; v1 submitted 1 May, 2017; originally announced May 2017.