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Skipper-in-CMOS: Non-Destructive Readout with Sub-Electron Noise Performance for Pixel Detectors
Authors:
Agustin J. Lapi,
Miguel Sofo-Haro,
Benjamin C. Parpillon,
Adi Birman,
Guillermo Fernandez-Moroni,
Lorenzo Rota,
Fabricio Alcalde Bessia,
Aseem Gupta,
Claudio Chavez Blanco,
Fernando Chierchie,
Julie Segal,
Christopher J. Kenney,
Angelo Dragone,
Shaorui Li,
Davide Braga,
Amos Fenigstein,
Juan Estrada,
Farah Fahim
Abstract:
The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtai…
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The Skipper-in-CMOS image sensor integrates the non-destructive readout capability of Skipper Charge Coupled Devices (Skipper-CCDs) with the high conversion gain of a pinned photodiode in a CMOS imaging process, while taking advantage of in-pixel signal processing. This allows both single photon counting as well as high frame rate readout through highly parallel processing. The first results obtained from a 15 x 15 um^2 pixel cell of a Skipper-in-CMOS sensor fabricated in Tower Semiconductor's commercial 180 nm CMOS Image Sensor process are presented. Measurements confirm the expected reduction of the readout noise with the number of samples down to deep sub-electron noise of 0.15rms e-, demonstrating the charge transfer operation from the pinned photodiode and the single photon counting operation when the sensor is exposed to light. The article also discusses new testing strategies employed for its operation and characterization.
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Submitted 19 February, 2024;
originally announced February 2024.
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Photon counting from the vacuum ultraviolet to the short wavelength infrared using semiconductor and superconducting technologies
Authors:
Jonathan Asaadi,
Dan Baxter,
Karl K. Berggren,
Davide Braga,
Serge A. Charlebois,
Clarence Chang,
Angelo Dragone,
Alex Drlica-Wagner,
Carlos O. Escobar,
Juan Estrada,
Farah Fahim,
Michael Febbraro,
Guillermo Fernandez Moroni,
Stephen Holland,
Todd Hossbach,
Stewart Koppell,
Christopher Leitz,
Agustina Magnoni,
Benjamin A. Mazin,
Jean-François Pratte,
Bernie Rauscher,
Dario Rodrigues,
Lingjia Shen,
Miguel Sofo-Haro,
Javier Tiffenberg
, et al. (5 additional authors not shown)
Abstract:
In the last decade, several photon counting technologies have been developed opening a new window for experiments in the low photon number regime. Several ongoing and future projects in HEP benefit from these developments, which will also have a large impact outside HEP. During the next decade there is a clear technological opportunity to fully develop these sensors and produce a large impact in H…
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In the last decade, several photon counting technologies have been developed opening a new window for experiments in the low photon number regime. Several ongoing and future projects in HEP benefit from these developments, which will also have a large impact outside HEP. During the next decade there is a clear technological opportunity to fully develop these sensors and produce a large impact in HEP. In this white paper we discuss the need for photon counting technologies in future projects, and present some technological opportunities to address those needs.
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Submitted 23 March, 2022;
originally announced March 2022.
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Monolithic Active Pixel Sensors on CMOS technologies
Authors:
Nicole Apadula,
Whitney Armstrong,
James Brau,
Martin Breidenbach,
R. Caputo,
Gabriella Carinii,
Alberto Collu,
Marcel Demarteau,
Grzegorz Deptuch,
Angelo Dragone,
Gabriele Giacomini,
Carl Grace,
Norman Graf,
Leo Greiner,
Ryan Herbst,
Gunther Haller,
Manoj Jadhav,
Sylvester Joosten,
Christopher J. Kenney,
C. Kierans,
Jihee Kim,
Thomas Markiewicz,
Yuan Mei,
Jessica Metcalfe,
Zein-Eddine Meziani
, et al. (15 additional authors not shown)
Abstract:
Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are…
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Collider detectors have taken advantage of the resolution and accuracy of silicon detectors for at least four decades. Future colliders will need large areas of silicon sensors for low mass trackers and sampling calorimetry. Monolithic Active Pixel Sensors (MAPS), in which Si diodes and readout circuitry are combined in the same pixels, and can be fabricated in some of standard CMOS processes, are a promising technology for high-granularity and light detectors. In this paper we review 1) the requirements on MAPS for trackers and electromagnetic calorimeters (ECal) at future colliders experiments, 2) the ongoing efforts towards dedicated MAPS for the Electron-Ion Collider (EIC) at BNL, for which the EIC Silicon Consortium was already instantiated, and 3) space-born applications for MeV $γ$-ray experiments with MAPS based trackers (AstroPix).
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Submitted 28 March, 2022; v1 submitted 14 March, 2022;
originally announced March 2022.
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Robust Pixel Gain Calibration with Limited Statistics
Authors:
G. Blaj,
G. Haller,
C. J. Kenney
Abstract:
Pixel detectors typically display pixel-to-pixel gain variation of a few percent which result in reduced spectroscopic performance. We have developed a calibration method which relies on cross-correlating histograms of many pixel pairs and obtaining large sets of relative shifts. These were subsequently used to calculate absolute pixel shifts and corresponding pixel gains. We demonstrate that this…
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Pixel detectors typically display pixel-to-pixel gain variation of a few percent which result in reduced spectroscopic performance. We have developed a calibration method which relies on cross-correlating histograms of many pixel pairs and obtaining large sets of relative shifts. These were subsequently used to calculate absolute pixel shifts and corresponding pixel gains. We demonstrate that this method yields stable gain calibration maps with an order of magnitude less statistics than required by typical approaches. Finally, we demonstrate the accuracy of the method by comparing with gain maps obtained with good statistics and monochromatic radiation at a synchrotron beamline.
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Submitted 16 July, 2019;
originally announced July 2019.
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Hammerhead, an ultrahigh resolution ePix camera for wavelength-dispersive spectrometers
Authors:
G. Blaj,
D. Bhogadi,
C. -E. Chang,
D. Doering,
C. J. Kenney,
T. Kroll,
M. Kwiatkowski,
J. Segal,
D. Sokaras,
G. Haller
Abstract:
Wavelength-dispersive spectrometers (WDS) are often used in synchrotron and FEL applications where high energy resolution (in the order of eV) is important. Increasing WDS energy resolution requires increasing spatial resolution of the detectors in the dispersion direction. The common approaches with strip detectors or small pixel detectors are not ideal. We present a novel approach, with a sensor…
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Wavelength-dispersive spectrometers (WDS) are often used in synchrotron and FEL applications where high energy resolution (in the order of eV) is important. Increasing WDS energy resolution requires increasing spatial resolution of the detectors in the dispersion direction. The common approaches with strip detectors or small pixel detectors are not ideal. We present a novel approach, with a sensor using rectangular pixels with a high aspect ratio (between strips and pixels, further called "strixels"), and strixel redistribution to match the square pixel arrays of typical ASICs while avoiding the considerable effort of redesigning ASICs. This results in a sensor area of 17.4 mm x 77 mm, with a fine pitch of 25 $μ$m in the horizontal direction resulting in 3072 columns and 176 rows. The sensors use ePix100 readout ASICs, leveraging their low noise (43 e$^-$, or 180 eV rms). We present results obtained with a Hammerhead ePix100 camera, showing that the small pitch (25 $μ$m) in the dispersion direction maximizes performance for both high and low photon occupancies, resulting in optimal WDS energy resolution. The low noise level at high photon occupancy allows precise photon counting, while at low occupancy, both the energy and the subpixel position can be reconstructed for every photon, allowing an ultrahigh resolution (in the order of 1 $μ$m) in the dispersion direction and rejection of scattered beam and harmonics. Using strixel sensors with redistribution and flip-chip bonding to standard ePix readout ASICs results in ultrahigh position resolution ($\sim$1 $μ$m) and low noise in WDS applications, leveraging the advantages of hybrid pixel detectors (high production yield, good availability, relatively inexpensive) while minimizing development complexity through sharing the ASIC, hardware, software and DAQ development with existing versions of ePix cameras.
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Submitted 15 March, 2019;
originally announced March 2019.
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Ultrafast processing of pixel detector data with machine learning frameworks
Authors:
Gabriel Blaj,
Chu-En Chang,
Christopher J. Kenney
Abstract:
Modern photon science performed at high repetition rate free-electron laser (FEL) facilities and beyond relies on 2D pixel detectors operating at increasing frequencies (towards 100 kHz at LCLS-II) and producing rapidly increasing amounts of data (towards TB/s). This data must be rapidly stored for offline analysis and summarized in real time. While at LCLS all raw data has been stored, at LCLS-II…
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Modern photon science performed at high repetition rate free-electron laser (FEL) facilities and beyond relies on 2D pixel detectors operating at increasing frequencies (towards 100 kHz at LCLS-II) and producing rapidly increasing amounts of data (towards TB/s). This data must be rapidly stored for offline analysis and summarized in real time. While at LCLS all raw data has been stored, at LCLS-II this would lead to a prohibitive cost; instead, enabling real time processing of pixel detector raw data allows reducing the size and cost of online processing, offline processing and storage by orders of magnitude while preserving full photon information, by taking advantage of the compressibility of sparse data typical for LCLS-II applications. We investigated if recent developments in machine learning are useful in data processing for high speed pixel detectors and found that typical deep learning models and autoencoder architectures failed to yield useful noise reduction while preserving full photon information, presumably because of the very different statistics and feature sets between computer vision and radiation imaging. However, we redesigned in Tensorflow mathematically equivalent versions of the state-of-the-art, "classical" algorithms used at LCLS. The novel Tensorflow models resulted in elegant, compact and hardware agnostic code, gaining 1 to 2 orders of magnitude faster processing on an inexpensive consumer GPU, reducing by 3 orders of magnitude the projected cost of online analysis at LCLS-II. Computer vision a decade ago was dominated by hand-crafted filters; their structure inspired the deep learning revolution resulting in modern deep convolutional networks; similarly, our novel Tensorflow filters provide inspiration for designing future deep learning architectures for ultrafast and efficient processing and classification of pixel detector images at FEL facilities.
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Submitted 15 March, 2019;
originally announced March 2019.
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Performance of ePix10K, a high dynamic range, gain auto-ranging pixel detector for FELs
Authors:
G. Blaj,
A. Dragone,
C. J. Kenney,
F. Abu-Nimeh,
P. Caragiulo,
D. Doering,
M. Kwiatkowski,
J. Pines,
M. Weaver,
S. Boutet,
G. Carini,
C. -E. Chang,
P. Hart,
J. Hasi,
M. Hayes,
R. Herbst,
J. Koglin,
K. Nakahara,
J. Segal,
G. Haller
Abstract:
ePix10K is a hybrid pixel detector developed at SLAC for demanding free-electron laser (FEL) applications, providing an ultrahigh dynamic range (245 eV to 88 MeV) through gain auto-ranging. It has three gain modes (high, medium and low) and two auto-ranging modes (high-to-low and medium-to-low). The first ePix10K cameras are built around modules consisting of a sensor flip-chip bonded to 4 ASICs,…
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ePix10K is a hybrid pixel detector developed at SLAC for demanding free-electron laser (FEL) applications, providing an ultrahigh dynamic range (245 eV to 88 MeV) through gain auto-ranging. It has three gain modes (high, medium and low) and two auto-ranging modes (high-to-low and medium-to-low). The first ePix10K cameras are built around modules consisting of a sensor flip-chip bonded to 4 ASICs, resulting in 352x384 pixels of 100 $μ$m x 100 $μ$m each. We present results from extensive testing of three ePix10K cameras with FEL beams at LCLS, resulting in a measured noise floor of 245 eV rms, or 67 e$^-$ equivalent noise charge (ENC), and a range of 11000 photons at 8 keV. We demonstrate the linearity of the response in various gain combinations: fixed high, fixed medium, fixed low, auto-ranging high to low, and auto-ranging medium-to-low, while maintaining a low noise (well within the counting statistics), a very low cross-talk, perfect saturation response at fluxes up to 900 times the maximum range, and acquisition rates of up to 480 Hz. Finally, we present examples of high dynamic range x-ray imaging spanning more than 4 orders of magnitude dynamic range (from a single photon to 11000 photons/pixel/pulse at 8 keV). Achieving this high performance with only one auto-ranging switch leads to relatively simple calibration and reconstruction procedures. The low noise levels allow usage with long integration times at non-FEL sources. ePix10K cameras leverage the advantages of hybrid pixel detectors with high production yield and good availability, minimize development complexity through sharing the hardware, software and DAQ development with all other versions of ePix cameras, while providing an upgrade path to 5 kHz, 25 kHz and 100 kHz in three steps over the next few years, matching the LCLS-II requirements.
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Submitted 15 March, 2019;
originally announced March 2019.
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Analytical Solutions of Transient Drift-Diffusion in P-N Junction Pixel Sensors
Authors:
G. Blaj,
C. J. Kenney,
J. Segal,
G. Haller
Abstract:
Radiation detection in applications ranging from high energy physics to medical imaging rely on solid state detectors, often hybrid pixel detectors with (1) reverse biased p-n junction pixel sensors and (2) readout ASICs, attached by flip-chip-bonding. Transient signals characteristics are important in, e.g., matching ASIC and sensor design, modeling and optimizing detector parameters and describi…
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Radiation detection in applications ranging from high energy physics to medical imaging rely on solid state detectors, often hybrid pixel detectors with (1) reverse biased p-n junction pixel sensors and (2) readout ASICs, attached by flip-chip-bonding. Transient signals characteristics are important in, e.g., matching ASIC and sensor design, modeling and optimizing detector parameters and describing timing and charge sharing properties. Currently analytical forms of transient signals are available for only a few limited cases (e.g., drift or diffusion) or for the steady state (which is not relevant for high energy radiation detection). Tools are available for (relatively slow) numerical evaluation of the transient charge transport. We present here the first analytical solutions of partial differential equations describing drift-diffusion-recombination charge transport in planar p-n junction sensors in a variety of conditions: (1) undepleted, (2) fully depleted, (3) taking into account the gradual velocity saturation, and (4) overdepleted. We deduce the Green's functions which can be applied to any detection problem through simple convolution with the initial conditions. We compare the analytical solutions with Monte Carlo simulations and industry standard simulations (Synopsys Sentaurus), demonstrating good agreement. Using the analytical equations enables fast modeling of the influence of various detector parameters on tracking, imaging and timing performance, describing performance and enabling optimizations for different applications. Finally, we illustrate this model with applications in 3D+T (x,y,z,time) photon tracking and 4D+T (x,y,theta,phi,time) relativistic charged particle tracking.
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Submitted 5 June, 2017;
originally announced June 2017.
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Optimal pulse processing, pile-up decomposition and applications of silicon drift detectors at LCLS
Authors:
G. Blaj,
C. J. Kenney,
A. Dragone,
G. Carini,
S. Herrmann,
P. Hart,
A. Tomada,
J. Koglin,
G. Haller,
S. Boutet,
M. Messerschmidt,
G. Williams,
M. Chollet,
G. Dakovski,
S. Nelson,
J. Pines,
S. Song,
J. Thayer
Abstract:
Silicon drift detectors (SDDs) revolutionized spectroscopy in fields as diverse as geology and dentistry. For a subset of experiments at ultra-fast, x-ray free-electron lasers (FELs), SDDs can make substantial contributions. Often the unknown spectrum is interesting, carrying science data, or the background measurement is useful to identify unexpected signals. Many measurements involve only severa…
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Silicon drift detectors (SDDs) revolutionized spectroscopy in fields as diverse as geology and dentistry. For a subset of experiments at ultra-fast, x-ray free-electron lasers (FELs), SDDs can make substantial contributions. Often the unknown spectrum is interesting, carrying science data, or the background measurement is useful to identify unexpected signals. Many measurements involve only several discrete photon energies known a priori, allowing single event decomposition of pile-up and spectroscopic photon counting. We designed a pulse function and demonstrated that the signal amplitude and rise time are obtained for each pulse by fitting, thus removing the need for pulse sha**. By avoiding pulse sha**, rise times of tens of nanoseconds resulted in reduced pulse pile-up and allowed decomposition of remaining pulse pile-up at photon separation times down to hundreds of nanoseconds while yielding time-of-arrival information with precision of 10 nanoseconds. Waveform fitting yields simultaneously high energy resolution and high counting rates (2 orders of magnitude higher than current digital pulse processors). We showed that pile-up spectrum fitting is relatively simple and preferable to pile-up spectrum deconvolution. We developed a photon pile-up statistical model for constant intensity sources, extended it to variable intensity sources (typical for FELs) and used it to fit a complex pile-up spectrum. We subsequently developed a Bayesian pile-up decomposition method that allows decomposing pile-up of single events with up to 6 photons from 6 monochromatic lines with 99% accuracy. The usefulness of SDDs will continue into the x-ray FEL era of science. Their successors, the ePixS hybrid pixel detectors, already offer hundreds of pixels, each with similar performance to an SDD, in a compact, robust and affordable package
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Submitted 19 March, 2019; v1 submitted 5 June, 2017;
originally announced June 2017.
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Demonstration of Surface Electron Rejection with Interleaved Germanium Detectors for Dark Matter Searches
Authors:
R. Agnese,
A. J. Anderson,
D. Balakishiyeva,
R. Basu Thakur,
D. A. Bauer,
A. Borgland,
D. Brandt,
P. L. Brink,
R. Bunker,
B. Cabrera,
D. O. Caldwell,
D. G. Cerdeno,
H. Chagani,
M. Cherry,
J. Cooley,
B. Cornell,
C. H. Crewdson,
P. Cushman,
M. Daal,
P. C. F. Di Stefano,
E. Do Couto E Silva,
T. Doughty,
L. Esteban,
S. Fallows,
E. Figueroa-Feliciano
, et al. (66 additional authors not shown)
Abstract:
The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Surface event rejection capabilities were teste…
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The SuperCDMS experiment in the Soudan Underground Laboratory searches for dark matter with a 9-kg array of cryogenic germanium detectors. Symmetric sensors on opposite sides measure both charge and phonons from each particle interaction, providing excellent discrimination between electron and nuclear recoils, and between surface and interior events. Surface event rejection capabilities were tested with two $^{210}$Pb sources producing $\sim$130 beta decays/hr. In $\sim$800 live hours, no events leaked into the 8--115 keV signal region, giving upper limit leakage fraction $1.7 \times 10^{-5}$ at 90% C.L., corresponding to $< 0.6$ surface event background in the future 200-kg SuperCDMS SNOLAB experiment.
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Submitted 4 October, 2013; v1 submitted 10 May, 2013;
originally announced May 2013.