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Feedback Pulses
Authors:
Vishesh Kaushik,
Navin Khaneja
Abstract:
We have a new paradigm to design NMR pulses. Pulses, we call feedback pulses. We want broadband inversion and excitation. We have many offsets, start evolving them all starting from the north pole. Monitor them on the Bloch sphere, see which offset is worst (most away from south pole). Change the rf-phase to the offset ($π/2$ ahead of offset transverse magnetization phase) and irradiate at that of…
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We have a new paradigm to design NMR pulses. Pulses, we call feedback pulses. We want broadband inversion and excitation. We have many offsets, start evolving them all starting from the north pole. Monitor them on the Bloch sphere, see which offset is worst (most away from south pole). Change the rf-phase to the offset ($π/2$ ahead of offset transverse magnetization phase) and irradiate at that offset frequency and evolve for some time and monitor and repeat, looking for worst offset. When we are on resonance to a offset, we are doing well, inverting it and when we are off resonant, we don't hurt much (even if hurt little, we will come back to the offset in good time). By the process of monitoring, and setting phase we eventually push everything to the south pole and bingo, we have an inversion pulse. Feedback is done in simulation, but what results in end is a broadband inversion pulse. For broadband excitation, start with all offsets (symmetric around origin) on y axis. By feedback push them to the south pole. When we run the resulting sequence backward with phases, $π$ incremented, we will get an excitation pulse. For band-selective excitation pulse put offsets in pass band on the $y$ axis and in the stop band on the south pole. Use feedback to push everything to the south pole. Again, run backwards with $π$ incremented phases, to get band selective excitation. Suddenly, we have it all, simple and easy. The paper, introduces the feedback pulse algorithm, simulations and experiments.
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Submitted 28 January, 2024;
originally announced February 2024.
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Engineering of Niobium Surfaces Through Accelerated Neutral Atom Beam Technology For Quantum Applications
Authors:
Soumen Kar,
Conan Weiland,
Chenyu Zhou,
Ekta Bhatia,
Brian Martinick,
Jakub Nalaskowski,
John Mucci,
Stephen Olson,
Pui Yee Hung,
Ilyssa Wells,
Hunter Frost,
Corbet S. Johnson,
Thomas Murray,
Vidya Kaushik,
Sean Kirkpatrick,
Kiet Chau,
Michael J. Walsh,
Mingzhao Liu,
Satyavolu S. Papa Rao
Abstract:
A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontr…
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A major roadblock to scalable quantum computing is phase decoherence and energy relaxation caused by qubits interacting with defect-related two-level systems (TLS). Native oxides present on the surfaces of superconducting metals used in quantum devices are acknowledged to be a source of TLS that decrease qubit coherence times. Reducing microwave loss by surface engineering (i.e., replacing uncontrolled native oxide of superconducting metals with a thin, stable surface with predictable characteristics) can be a key enabler for pushing performance forward with devices of higher quality factor. In this work, we present a novel approach to replace the native oxide of niobium (typically formed in an uncontrolled fashion when its pristine surface is exposed to air) with an engineered oxide, using a room-temperature process that leverages Accelerated Neutral Atom Beam (ANAB) technology at 300 mm wafer scale. This ANAB beam is composed of a mixture of argon and oxygen, with tunable energy per atom, which is rastered across the wafer surface. The ANAB-engineered Nb-oxide thickness was found to vary from 2 nm to 6 nm depending on ANAB process parameters. Modeling of variable-energy XPS data confirm thickness and compositional control of the Nb surface oxide by the ANAB process. These results correlate well with those from transmission electron microscopy and X-ray reflectometry. Since ANAB is broadly applicable to material surfaces, the present study indicates its promise for modification of the surfaces of superconducting quantum circuits to achieve longer coherence times.
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Submitted 27 February, 2023;
originally announced February 2023.
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On-chip Nanophotonic Broadband Wavelength Detector with 2D-Electron Gas
Authors:
Vishal Kaushik,
Swati Rajput,
Sulabh Srivastav,
Lalit Singh,
Prem Babu,
Elham Heidari,
Moustafa Ahmed,
Yas Al-Hadeethi,
Hamed Dalir,
Volker J. Sorger,
Mukesh Kumar
Abstract:
Miniaturized, low-cost wavelength detectors are gaining enormous interest as we step into the new age of photonics. Incompatibility with integrated circuits or complex fabrication requirement in most of the conventionally used filters necessitates the development of a simple, on-chip platform for easy-to-use wavelength detection system. Also, intensity fluctuations hinder precise, noise free detec…
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Miniaturized, low-cost wavelength detectors are gaining enormous interest as we step into the new age of photonics. Incompatibility with integrated circuits or complex fabrication requirement in most of the conventionally used filters necessitates the development of a simple, on-chip platform for easy-to-use wavelength detection system. Also, intensity fluctuations hinder precise, noise free detection of spectral information. Here we propose a novel approach of utilizing wavelength sensitive photocurrent across semiconductor heterojunctions to experimentally validate broadband wavelength detection on an on-chip platform with simple fabrication process. The proposed device utilizes linear frequency response of internal photoemission via 2-D electron gas in a ZnO based heterojunction along with a reference junction for coherent common mode rejection. We report sensitivity of 0.96 uA/nm for a broad wavelength-range of 280 nm from 660-940 nm. Simple fabrication process, efficient intensity noise cancelation along with heat resistance and radiation hardness of ZnO makes the proposed platform simple, low-cost and efficient alternative for several applications such as optical spectrometers, sensing and IOTs.
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Submitted 4 November, 2021;
originally announced November 2021.
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In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory
Authors:
B. L. Ji,
H. Li,
Q. Ye,
S. Gausepohl,
S. Deora,
D. Veksler,
S. Vivekanand,
H. Chong,
H. Stamper,
T. Burroughs,
C. Johnson,
M. Smalley,
S. Bennett,
V. Kaushik,
J. Piccirillo,
M. Rodgers,
M. Passaro,
M. Liehr
Abstract:
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is dev…
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Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips. Bit-error-rate (BER) is proposed as a holistic parameter for the write cycle resistance statistics. Using the electrical in-line-test cycle data, a method is developed to derive BERs as functions of the design margin, to provide guidance for technology evaluation and product design. The proposed BER calculation can also be used in the off-line bench test and build-in-self-test (BIST) for adaptive error correction and for the other types of random access memories.
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Submitted 31 August, 2015;
originally announced September 2015.
