Analog Content-Addressable Memory from Complementary FeFETs
Authors:
Xiwen Liu,
Keshava Katti,
Yunfei He,
Paul Jacob,
Claudia Richter,
Uwe Schroeder,
Santosh Kurinec,
Pratik Chaudhari,
Deep Jariwala
Abstract:
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations, like parallel search, have been overlo…
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To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations, like parallel search, have been overlooked. Current parallel search architectures, namely content-addressable memory (CAM), often use binary, which restricts density and functionality. We present an analog CAM (ACAM) cell, built on two complementary ferroelectric field-effect transistors (FeFETs), that performs parallel search in the analog domain with over 40 distinct match windows. We then deploy it to calculate similarity between vectors, a building block in the following two machine learning problems. ACAM outperforms ternary CAM (TCAM) when applied to similarity search for few-shot learning on the Omniglot dataset, yielding projected simulation results with improved inference accuracy by 5%, 3x denser memory architecture, and more than 100x faster speed compared to central processing unit (CPU) and graphics processing unit (GPU) per similarity search on scaled CMOS nodes. We also demonstrate 1-step inference on a kernel regression model by combining non-linear kernel computation and matrix multiplication in ACAM, with simulation estimates indicating 1,000x faster inference than CPU and GPU.
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Submitted 17 September, 2023;
originally announced September 2023.
Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs
Authors:
Kwan-Ho Kim,
Seyong Oh,
Merrilyn Mercy Adzo Fiagbenu,
Jeffrey Zheng,
Pariasadat Musavigharavi,
Pawan Kumar,
Nicholas Trainor,
Areej Aljarb,
Yi Wan,
Hyong Min Kim,
Keshava Katti,
Zichen Tang,
Vincent C. Tung,
Joan Redwing,
Eric A. Stach,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field…
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Intimate integration of memory devices with logic transistors is a frontier challenge in computer hardware. This integration is essential for augmenting computational power concurrently with enhanced energy efficiency in big-data applications such as artificial intelligence. Despite decades of efforts, reliable, compact, energy efficient and scalable memory devices are elusive. Ferroelectric Field Effect Transistors (FE-FETs) are a promising candidate but their scalability and performance in a back-end-of-line (BEOL) process remain unattained. Here, we present scalable BEOL compatible FE-FETs using two-dimensional (2D) MoS2 channel and AlScN ferroelectric dielectric. We have fabricated a large array of FE-FETs with memory windows larger than 7.8 V, ON/OFF ratios of greater than 10^7, and ON current density greater than 250 uA/um, all at ~80 nm channel lengths. Our devices show stable retention up to 20000 secs and endurance up to 20000 cycles in addition to 4-bit pulse programmable memory features thereby opening a path towards scalable 3D hetero-integration of 2D semiconductor memory with Si CMOS logic.
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Submitted 6 January, 2022;
originally announced January 2022.