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Additive GaN solid immersion lenses for enhanced photon extraction efficiency from diamond color centers
Authors:
Xingrui Cheng,
Nils Kolja Wessling,
Saptarsi Ghosh,
Andrew R. Kirkpatrick,
Menno J. Kappers,
Yashna N. D. Lekhai,
Gavin W. Morley,
Rachel A. Oliver,
Jason M. Smith,
Martin D. Dawson,
Patrick S. Salter,
Michael J. Strain
Abstract:
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion…
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Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased fluorescent light collection efficiency from laser-written nitrogen vacancy centers (NV) in bulk diamond facilitated by micro-transfer printed GaN solid immersion lenses. Both laser-writing of NV centres and transfer printing of micro-lens structures are compatible with high spatial resolution, enabling deterministic fabrication routes towards future scalable systems development. The micro-lenses are integrated in a non-invasive manner, as they are added on top of the unstructured diamond surface and bond by Van-der-Waals forces. For emitters at 5 micrometer depth, we find approximately 2x improvement of fluorescent light collection using an air objective with a numerical aperture of NA = 0.95 in good agreement with simulations. Similarly, the solid immersion lenses strongly enhance light collection when using an objective with NA = 0.5, significantly improving the signal-to-noise ratio of the NV center emission while maintaining the NV's quantum properties after integration.
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Submitted 20 June, 2023;
originally announced June 2023.
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A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates
Authors:
D. Kundys,
D. Sutherland,
M. Davies,
F. Oehler,
J. Griffiths,
P. Dawson,
M. J. Kappers,
C. J. Humphreys,
S. Schulz,
F. Tang,
R. A. Oliver
Abstract:
In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are ver…
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In this paper we report on a comparative study of the low temperature emission and polarisation properties of InGaN/GaN quantum wells (QWs) grown on nonpolar a-plane and m-plane free-standing bulk GaN substrates where the In content varied from 0.14 to 0.28 in the m-plane series and 0.08 to 0.21 for the a-plane series. The low temperature photoluminescence spectra from both sets of samples are very broad with full width at half-maximum height increasing from 81 to 330 meV as the In fraction increases. Comparative photoluminescence excitation spectroscopy indicates that the recombination mainly involves strongly localised carriers. At a temperature of 10 K the degree of linear polarisation of the a-plane samples is much smaller than of the m-plane counterparts and also varies across the spectrum. From polarisation-resolved photoluminescence excitation spectroscopy we measured the energy splitting between the lowest valence sub-band states to lie in the range of 23-54 meV for both a-and m-plane samples in which we could observe distinct exciton features in the polarised photoluminescence excitation spectroscopy. Thus, the thermal occupation of a higher valence subband cannot be responsible for the reduction of the degree of linear polarisation. Time-resolved spectroscopy indicates that in a-plane samples there is an extra emission component which at least partly responsible for the reduction in the degree of linear polarisation.
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Submitted 11 November, 2016;
originally announced December 2016.
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Low threshold, room-temperature microdisk lasers in the blue spectral range
Authors:
Igor Aharonovich,
Alexander Woolf,
Kasey J. Russell,
Tongtong Zhu,
Menno J. Kappers,
Rachel A. Oliver,
Evelyn L. Hu
Abstract:
InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs…
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InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity.
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Submitted 31 August, 2012;
originally announced August 2012.
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A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity
Authors:
Nan Niu,
Tsung-Li Liu,
Igor Aharonovich,
Kasey J. Russell,
Alexander Woolf,
Thomas C. Sadler,
Haitham A. R. El-Ella,
Menno J. Kappers,
Rachel A. Oliver,
Evelyn L. Hu
Abstract:
Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is pro…
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Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics.
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Submitted 23 June, 2012;
originally announced June 2012.
