CMOS pixel sensors optimized for large ionizing dynamic
Authors:
W. Ren,
J. Baudot,
L. Federici,
C. Finck,
C. Hu-Guo,
M. Kachel,
C. -A. Reidel,
C. Schui,
R. Sefri,
E. Spiriti,
U. Weber,
Y. Zhao
Abstract:
Monolithic active pixel sensors (MAPS) are now well established as a technology for tracking charged particles, especially when low material budget is desirable. For such applications, sensors focus on spatial resolution and pixels with digital output or modest charge measurement ability are well suited. Within the European Union STRONG-2020 project, which focuses on experiments using hadrons, the…
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Monolithic active pixel sensors (MAPS) are now well established as a technology for tracking charged particles, especially when low material budget is desirable. For such applications, sensors focus on spatial resolution and pixels with digital output or modest charge measurement ability are well suited. Within the European Union STRONG-2020 project, which focuses on experiments using hadrons, the TIIMM (Tracking and Ions Identifications with Minimal Material budget) joint research activity intends to expand granular MAPS capacity to energy-loss (ΔE) measurement for ion species identification. The TIIMM prototypes are developed in the Tower Jazz 180 nm CMOS image sensor (CIS) process. The Time-Over-Threshold (ToT) method is applied to the sensor for the energy-loss measurement. The main design details and the preliminary test results from laboratory measurements of the initial TIIMM prototype are presented in this work.
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Submitted 24 January, 2022;
originally announced January 2022.
On drift fields in CMOS Monolithic Active Pixel Sensors with point-like collection diodes
Authors:
M. Deveaux,
J. Baudot,
A. Dorokhov,
D. Doering,
J. Heymes,
M. Kachel,
M. Koziel,
B. Linnik,
C. Müntz,
J. Stroth
Abstract:
- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors.
We stud…
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- Paper withdrawn by the author - CMOS Monolithic Active Pixel Sensors for charged particle tracking are considered as technology for numerous experiments in heavy ion and particle physics. To match the requirements for those applications in terms of tolerance to non-ionizing radiation, it is being tried to deplete the sensitive volume of the, traditionally non-depleted, silicon sensors.
We study the feasibility of this approach for the common case that the collection diodes of the pixel are small as compared to the pixel pitch. An analytic equation predicting the thickness of the depletion depth and the capacity of this point-like junction is introduced. We find that the predictions of this equations differs qualitatively from the usual results for flat PN junctions and that $dC/dU$-measurements are not suited to measure the depletion depth of diodes with point-like geometry. The predictions of the equation is compared with measurements on the depletion depth of CMOS sensors, which were carried out with a novel measurement protocol. It is found that the equation and the measurement results match with each other. By comparing our findings with TCAD simulations, we find that precise simulation models matches the empirical findings while simplified models overestimate the depletion depth dramatically. A potential explanation for this finding is introduced and the consequences for the design of CMOS sensors are discussed.
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Submitted 29 October, 2016; v1 submitted 26 July, 2016;
originally announced July 2016.
