A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
Authors:
Patrick Quach,
Arnaud Jollivet,
Andrey Babichev,
Nathalie Isac,
Martina Morassi,
Aristide Lemaitre,
Pavel Yunin,
Eric Frayssinet,
Philippe de Mierry,
Mathieu Jeannin,
Adel Bousseksou,
Raffaele Colombelli,
Maria Tchernycheva,
Yvon Cordier,
François Julien
Abstract:
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride…
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We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.
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Submitted 14 April, 2022;
originally announced April 2022.
Intersubband polarons in oxides
Authors:
M. Montes Bajo,
J. Tamayo-Arriola,
M. Hugues,
J. M. Ulloa,
N. Le Biavan,
R. Peretti,
F. H. Julien,
J. Faist,
J. M. Chauveau,
A. Hierro
Abstract:
Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequ…
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Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequency due to the very dense 2DEG achieved and the large difference between the static and high-frequency dielectric constants in ZnO. The ISB polaron is observed optically in multiple QW structures with 2DEG densities ranging from $5\times 10^{12}$ to $5\times 10^{13}$ cm$^{-2}$, where an unprecedented regime is reached in which the frequency of the upper ISB polaron branch is three times larger than that of the bare ISB transition. This study opens new prospects to the exploitation of oxides in phenomena happening in the ultrastrong coupling regime.
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Submitted 22 March, 2017;
originally announced March 2017.
