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Subsurface Characteristics of Metal-Halide Perovskites Polished by Argon Ion Beam
Authors:
Yu-Lin Hsu,
Chongwen Li,
Andrew C. Jones,
Michael T. Pratt,
Ashif Chowdhury,
Yanfa Yan,
Heayoung P. Yoon
Abstract:
Focused ion beam (FIB) techniques have been frequently used to section metal-halide perovskites for microstructural investigations. However, the ion beams directly irradiated to the sample surface may alter the properties far different from pristine, potentially leading to modified deterioration mechanisms under aging stressors. Here, we combine complementary approaches to measure the subsurface c…
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Focused ion beam (FIB) techniques have been frequently used to section metal-halide perovskites for microstructural investigations. However, the ion beams directly irradiated to the sample surface may alter the properties far different from pristine, potentially leading to modified deterioration mechanisms under aging stressors. Here, we combine complementary approaches to measure the subsurface characteristics of polished perovskite and identify the chemical species responsible for the measured properties. Analysis of the experimental results in conjunction with Monte Carlo simulations indicates that atomic displacements and local heating occur in the subsurface of methylammonium lead iodide (MAPbI3) by glazing Ar+ beam irradiation (15 nm by 4 kV at 3 degree). The lead-rich, iodine-deficient surface promotes rapid phase segregation under thermal aging conditions. On the other hand, despite the subsurface modification, our experiments confirm the rest of the MAPbI3 bulk retains the material integrity. Our observation supports that polished perovskites could serve in studying the properties of bulk or buried junctions far away from the altered subsurface with care.
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Submitted 27 December, 2022;
originally announced December 2022.
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Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
Authors:
F. J. Schupp,
F. Vigneau,
Y. Wen,
A. Mavalankar,
J. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie,
C. G. Smith,
L. C. Camenzind,
L. Yu,
D. M. Zumbühl,
G. A. D. Briggs,
N. Ares,
E. A. Laird
Abstract:
Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The…
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Fault-tolerant spin-based quantum computers will require fast and accurate qubit readout. This can be achieved using radio-frequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07 aF/\sqrt{Hz}. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1 microsecond of integration time.
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Submitted 29 June, 2020; v1 submitted 12 October, 2018;
originally announced October 2018.
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Quantum photonics hybrid integration platform
Authors:
Eoin Murray,
David P. Ellis,
Thomas Meany,
Frederik F. Floether,
James P. Lee,
Jonathan P. Griffiths,
Geb A. C. Jones,
Ian Farrer,
David A. Ritchie,
Anthony J. Bennett,
Andrew J. Shields
Abstract:
Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to an SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguid…
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Fundamental to integrated photonic quantum computing is an on-chip method for routing and modulating quantum light emission. We demonstrate a hybrid integration platform consisting of arbitrarily designed waveguide circuits and single photon sources. InAs quantum dots (QD) embedded in GaAs are bonded to an SiON waveguide chip such that the QD emission is coupled to the waveguide mode. The waveguides are SiON core embedded in a SiO2 cladding. A tuneable Mach Zehnder modulates the emission between two output ports and can act as a path-encoded qubit preparation device. The single photon nature of the emission was verified by an on-chip Hanbury Brown and Twiss measurement.
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Submitted 31 July, 2015; v1 submitted 1 July, 2015;
originally announced July 2015.
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In-plane emission of indistinguishable photons generated by an integrated quantum emitter
Authors:
Sokratis Kalliakos,
Yarden Brody,
Andre Schwagmann,
Anthony J. Bennett,
Martin B. Ward,
David J. P. Ellis,
Joanna Skiba-Szymanska,
Ian Farrer,
Jonathan P. Griffiths,
Geb A. C. Jones,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon i…
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We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing for on-chip light propagation. We perform a Hong-Ou-Mandel-type of experiment with photons collected from the exit of the waveguide and we observe two-photon interference under continuous wave excitation. Our results pave the way for the integration of quantum emitters in advanced photonic quantum circuits.
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Submitted 16 June, 2014;
originally announced June 2014.
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On-chip generation and guiding of quantum light from a site-controlled quantum dot
Authors:
Ayesha Jamil,
Joanna Skiba-Szymanska,
Sokratis Kalliakos,
Andre Schwagmann,
Martin B. Ward,
Yarden Brody,
David J. P. Ellis,
Ian Farrer,
Jonathan P. Griffiths,
Geb A. C. Jones,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed o…
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We demonstrate the emission and routing of single photons along a semiconductor chip originating from carrier recombination in an actively positioned InAs quantum dot. Device scale arrays of quantum dots are formed by a two step regrowth process. We precisely locate the propagating region of a unidirectional photonic crystal waveguide with respect to the quantum dot nucleation site. Under pulsed optical excitation, the multiphoton emission probability from the exit of the waveguide is 12 \pm 5 % before any background correction. Our results are a major step towards the deterministic integration of a quantum emitter with the waveguiding components of photonic quantum circuits.
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Submitted 13 March, 2014;
originally announced March 2014.
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On-chip single photon emission from an integrated semiconductor quantum dot into a photonic crystal waveguide
Authors:
Andre Schwagmann,
Sokratis Kalliakos,
Ian Farrer,
Jonathan P. Griffiths,
Geb A. C. Jones,
David A. Ritchie,
Andrew J. Shields
Abstract:
We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, singl…
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We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a slow-light mode of the waveguide. Photon-correlation measurements confirm the sub-Poissonian statistics of the in-plane emission. Under optical pulse excitation, single photon emission rates of up to 19 MHz into the guided mode are demonstrated, which corresponds to a device efficiency of 24%. These results herald the monolithic integration of sources in photonic quantum circuits.
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Submitted 17 January, 2012;
originally announced January 2012.
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Towards a quantum representation of the ampere using single electron pumps
Authors:
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
P. See,
T. J. B. M. Janssen,
J. P. Griffiths,
G. A. C. Jones,
I. Farrer,
D. A. Ritchie
Abstract:
Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially design…
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Electron pumps generate a macroscopic electric current by controlled manipulation of single electrons. Despite intensive research towards a quantum current standard over the last 25 years, making a fast and accurate quantised electron pump has proved extremely difficult. Here we demonstrate that the accuracy of a semiconductor quantum dot pump can be dramatically improved by using specially designed gate drive waveforms. Our pump can generate a current of up to 150 pA, corresponding to almost a billion electrons per second, with an experimentally demonstrated current accuracy better than 1.2 parts per million (ppm) and strong evidence, based on fitting data to a model, that the true accuracy is approaching 0.01 ppm. This type of pump is a promising candidate for further development as a realisation of the SI base unit ampere, following a re-definition of the ampere in terms of a fixed value of the elementary charge.
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Submitted 10 July, 2012; v1 submitted 12 January, 2012;
originally announced January 2012.
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Accurate high speed single-electron quantum dot preparation
Authors:
S. P. Giblin,
S. J. Wright,
J. Fletcher,
M. Kataoka,
M. Pepper,
T. J. B. M. Janssen,
D. A. Ritchie,
C. A. Nicoll,
D. Anderson,
G. A. C. Jones
Abstract:
Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, tho…
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Using standard microfabrication techniques it is now possible to construct devices, which appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high frequency operation, have not been tested in detail. We present high accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single AC-modulated gate driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pum** cycle.
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Submitted 5 May, 2010; v1 submitted 30 March, 2010;
originally announced March 2010.
