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Graphene/silicon heterojunction for reconfigurable phase-relevant activation function in coherent optical neural networks
Authors:
Chuyu Zhong,
Kun Liao,
Tianxiang Dai,
Maoliang Wei,
Hui Ma,
Jianghong Wu,
Zhibin Zhang,
Yuting Ye,
Ye Luo,
Zequn Chen,
Jialing Jian,
Chulei Sun,
Bo Tang,
Peng Zhang,
Ruonan Liu,
Junying Li,
Jianyi Yang,
Lan Li,
Kaihui Liu,
Xiaoyong Hu,
Hongtao Lin
Abstract:
Optical neural networks (ONNs) herald a new era in information and communication technologies and have implemented various intelligent applications. In an ONN, the activation function (AF) is a crucial component determining the network performances and on-chip AF devices are still in development. Here, we first demonstrate on-chip reconfigurable AF devices with phase activation fulfilled by dual-f…
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Optical neural networks (ONNs) herald a new era in information and communication technologies and have implemented various intelligent applications. In an ONN, the activation function (AF) is a crucial component determining the network performances and on-chip AF devices are still in development. Here, we first demonstrate on-chip reconfigurable AF devices with phase activation fulfilled by dual-functional graphene/silicon (Gra/Si) heterojunctions. With optical modulation and detection in one device, time delays are shorter, energy consumption is lower, reconfigurability is higher and the device footprint is smaller than other on-chip AF strategies. The experimental modulation voltage (power) of our Gra/Si heterojunction achieves as low as 1 V (0.5 mW), superior to many pure silicon counterparts. In the photodetection aspect, a high responsivity of over 200 mA/W is realized. Special nonlinear functions generated are fed into a complex-valued ONN to challenge handwritten letters and image recognition tasks, showing improved accuracy and potential of high-efficient, all-component-integration on-chip ONN. Our results offer new insights for on-chip ONN devices and pave the way to high-performance integrated optoelectronic computing circuits.
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Submitted 13 July, 2023;
originally announced July 2023.
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Effects of network topology and trait distribution on collective decision making
Authors:
Pengyu Liu,
Jie Jian
Abstract:
Social networks play an important role in analyzing the impact of individual-level interactions on societal or economic outcomes. We model interactive decision making for a community of individuals with different traits, represented by a social network with trait-attributed nodes. We develop a deterministic process generating a sequence of choices for each individual based on a trait-attributed so…
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Social networks play an important role in analyzing the impact of individual-level interactions on societal or economic outcomes. We model interactive decision making for a community of individuals with different traits, represented by a social network with trait-attributed nodes. We develop a deterministic process generating a sequence of choices for each individual based on a trait-attributed social network, initial choices of individuals and a set of predetermined trait-dependent rules for making decisions. The object of interest is the sequence of cumulative sum of choices over all individuals, which we call the cumulative sequence and consider as an index of collective decisions. We observe that, in a time period, a cumulative sequence can be unpredictable or predictable showing a repeated pattern either escalating to an extreme or constantly oscillating. We consider that predictable cumulative sequences represent unstable collective decisions of communities either extremizing or internally conflicting, while unpredictable cumulative sequences show stable changes. We analyze the effects of network topology and trait distribution on the probability of cumulative sequences being predictable, escalating and oscillating by simulations. Our findings include that unstable collective decisions are more probable as network density increases, that centralized networks are more likely to have unstable collective decisions and that networks with excessively clustered or scattered conformists and rebels tend to produce unstable cumulative sequences. We discuss the potential of the model as a framework for studying individuals with different traits on a social network directly and indirectly interacting in decision making.
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Submitted 7 August, 2022;
originally announced August 2022.
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High-performance Coherent Optical Modulators based on Thin-film Lithium Niobate Platform
Authors:
Mengyue Xu,
Mingbo He,
Hongguang Zhang,
Jian Jian,
Ying Pan,
Xiaoyue Liu,
Lifeng Chen,
Xiangyu Meng,
Hui Chen,
Zhaohui Li,
Xi Xiao,
Shaohua Yu,
Siyuan Yu,
Xinlun Cai
Abstract:
The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Id…
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The coherent transmission technology using digital signal processing and advanced modulation formats, is bringing networks closer to the theoretical capacity limit of optical fibres, the Shannon limit. The in-phase quadrature electro-optic modulator that encodes information on both the amplitude and the phase of light, is one of the underpinning devices for the coherent transmission technology. Ideally, such modulator should feature low loss, low drive voltage, large bandwidth, low chirp and compact footprint. However, these requirements have been only met on separate occasions. Here, we demonstrate integrated thin-film lithium niobate in-phase/quadrature modulators that fulfil these requirements simultaneously. The presented devices exhibit greatly improved overall performance (half-wave voltage, bandwidth and optical loss) over traditional lithium niobate counterparts, and support modulation data rate up to 320 Gbit s-1. Our devices pave new routes for future high-speed, energy-efficient, and cost-effective communication networks.
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Submitted 28 June, 2020;
originally announced June 2020.
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Room Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid State Refrigeration
Authors:
Mengwei Si,
Atanu K. Saha,
Pai-Ying Liao,
Shengjie Gao,
Sabine M. Neumayer,
Jie Jian,
**gkai Qin,
Nina Balke,
Haiyan Wang,
Petro Maksymovych,
Wenzhuo Wu,
Sumeet K. Gupta,
Peide D. Ye
Abstract:
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great inte…
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A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great interest and importance. Here, we report on the ECE of ferroelectric materials with van der Waals layered structure (CuInP2S6 or CIPS in this work in particular). Over 60% polarization charge change is observed within a temperature change of only 10 K at Curie temperature. Large adiabatic temperature change (|ΔT|) of 3.3 K, isothermal entropy change (|ΔS|) of 5.8 J kg-1 K-1 at |ΔE|=142.0 kV cm-1 at 315 K (above and near room temperature) are achieved, with a large EC strength (|ΔT|/|ΔE|) of 29.5 mK cm kV-1. The ECE of CIPS is also investigated theoretically by numerical simulation and a further EC performance projection is provided.
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Submitted 13 September, 2019; v1 submitted 19 January, 2019;
originally announced January 2019.
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A Ferroelectric Semiconductor Field-Effect Transistor
Authors:
Mengwei Si,
Atanu K. Saha,
Shengjie Gao,
Gang Qiu,
**gkai Qin,
Yuqin Duan,
Jie Jian,
Chang Niu,
Haiyan Wang,
Wenzhuo Wu,
Sumeet K. Gupta,
Peide D. Ye
Abstract:
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-eff…
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Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.
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Submitted 9 January, 2020; v1 submitted 7 December, 2018;
originally announced December 2018.
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High-Performance Hybrid Silicon and Lithium Niobate Mach-Zehnder Modulators for 100 Gbit/s and Beyond
Authors:
Mingbo He,
Mengyue Xu,
Yuxuan Ren,
Jian Jian,
Ziliang Ruan,
Yongsheng Xu,
Shengqian Gao,
Shihao Sun,
Xueqin Wen,
Lidan Zhou,
Lin Liu,
Changjian Guo,
Hui Chen,
Siyuan Yu,
Liu Liu,
Xinlun Cai
Abstract:
Optical modulators are at the heart of optical communication links. Ideally, they should feature low insertion loss, low drive voltage, large modulation bandwidth, high linearity, compact footprint and low manufacturing cost. Unfortunately, these criteria have only been achieved on separate occasions.Based on a Silicon and Lithium Niobate hybrid integration platform, we demonstrate Mach-Zehnder mo…
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Optical modulators are at the heart of optical communication links. Ideally, they should feature low insertion loss, low drive voltage, large modulation bandwidth, high linearity, compact footprint and low manufacturing cost. Unfortunately, these criteria have only been achieved on separate occasions.Based on a Silicon and Lithium Niobate hybrid integration platform, we demonstrate Mach-Zehnder modulators that simultaneously fulfill these criteria. The presented device exhibits an insertion loss of 2.5 dB, voltage-length product of 2.2 Vcm, high linearity, electro-optic bandwidth of at least 70 GHz and modulation rates up to 112 Gbit/s. The high-performance modulator is realized by seamless integration of high-contrast waveguide based on Lithium Niobate - the most mature modulator material - with compact, low-loss silicon circuits. The hybrid platform demonstrated here allows for the combination of 'best-in-breed' active and passive components, opening up new avenues for enabling future high-speed, energy efficient and cost-effective optical communication networks.
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Submitted 2 November, 2018; v1 submitted 7 July, 2018;
originally announced July 2018.
