-
On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands
Authors:
Mohd Saif Shaikh,
Shuyu Wen,
Mircea-Traian Catuneanu,
Mao Wang,
Artur Erbe,
Slawomir Prucnal,
Lars Rebohle,
Shengqiang Zhou,
Kambiz Jamshidi,
Manfred Helm,
Yonder Berencén
Abstract:
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wave…
▽ More
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.
△ Less
Submitted 2 May, 2023;
originally announced May 2023.
-
Degenerate optical parametric amplification in CMOS silicon
Authors:
David Heydari,
Mircea Catuneanu,
Edwin Ng,
Dodd J. Gray Jr.,
Ryan Hamerly,
Jatadhari Mishra,
Marc Jankowski,
M. M. Fejer,
Kambiz Jamshidi,
Hideo Mabuchi
Abstract:
Silicon is a common material for photonics due to its favorable optical properties in the telecom and mid-wave IR bands, as well as compatibility with a wide range of complementary metal-oxide semiconductor (CMOS) foundry processes. Crystalline inversion symmetry precludes silicon from natively exhibiting second-order nonlinear optical processes. In this work, we build on recent work in silicon ph…
▽ More
Silicon is a common material for photonics due to its favorable optical properties in the telecom and mid-wave IR bands, as well as compatibility with a wide range of complementary metal-oxide semiconductor (CMOS) foundry processes. Crystalline inversion symmetry precludes silicon from natively exhibiting second-order nonlinear optical processes. In this work, we build on recent work in silicon photonics that break this material symmetry using large bias fields, thereby enabling $χ^{(2)}$ interactions. Using this approach, we demonstrate both second-harmonic generation (with a normalized efficiency of $0.2\,\%\,\mathrm{W^{-1} cm^{-2}}$) and, to our knowledge, the first degenerate $χ^{(2)}$ optical parametric amplifier (with relative gain of $0.02\,\mathrm{dB}$ using $3\,\mathrm{mW}$ of pump power on-chip at a pump wavelength of $1196\,\mathrm{nm}$) using silicon-on-insulator waveguides fabricated in a CMOS-compatible commercial foundry. We expect this technology to enable the integration of novel nonlinear optical devices such as optical parametric amplifiers, oscillators, and frequency converters into large-scale, hybrid photonic-electronic systems by leveraging the extensive ecosystem of CMOS fabrication.
△ Less
Submitted 15 July, 2022;
originally announced July 2022.
-
Thermo-Optic Multi-Stability and Relaxation in Silicon Microring Resonators with Lateral Diodes
Authors:
Dodd Gray,
Ryan Hamerly,
Meysam Namdari,
Mircea-Traian Cătuneau,
Nate Bogdanowicz,
Hideo Mabuchi,
Kambiz Jamshidi
Abstract:
We demonstrate voltage-tunable thermo-optic bi- and tri-stability in silicon photonic microring resonators with lateral p-i-n junctions and present a technique for characterizing the thermo-optic transient response of integrated optical resonators. Our method for thermo-optic transient response measurement is applicable to any integrated photonics platform and uses standard equipment. Thermo-optic…
▽ More
We demonstrate voltage-tunable thermo-optic bi- and tri-stability in silicon photonic microring resonators with lateral p-i-n junctions and present a technique for characterizing the thermo-optic transient response of integrated optical resonators. Our method for thermo-optic transient response measurement is applicable to any integrated photonics platform and uses standard equipment. Thermo-optic relaxation in encapsulated waveguides is found to be approximately logarithmic in time, consistent with the analytic solution for 2D heat diffusion. We develop a model for thermo-optic microring multi-stability and dynamics which agrees with experiment data over a wide range of operating conditions. Our work highlights the fundamental connection in semiconductor waveguides between active free-carrier removal and thermo-optic heating, a result of particular relevance to Kerr soliton state stability and on-chip frequency comb generation. The devices studied here were fabricated in a CMOS foundry process and as a result our model is useful for design of silicon photonic waveguide devices.
△ Less
Submitted 22 March, 2020;
originally announced March 2020.
-
Conditions for Parametric and Free-Carrier Oscillation in Silicon Ring Cavities
Authors:
Ryan Hamerly,
Dodd Gray,
Christopher Rogers,
Kambiz Jamshidi
Abstract:
We model optical parametric oscillation in ring cavities with two-photon absorption, focusing on silicon at 1.55$μ$m. Oscillation is possible if free-carrier absorption can be mitigated; this can be achieved using carrier sweep-out in a reverse-biased p-i-n junction to reduce the carrier lifetime. By varying the pump power, detuning, and reverse-bias voltage, it is possible to generate frequency c…
▽ More
We model optical parametric oscillation in ring cavities with two-photon absorption, focusing on silicon at 1.55$μ$m. Oscillation is possible if free-carrier absorption can be mitigated; this can be achieved using carrier sweep-out in a reverse-biased p-i-n junction to reduce the carrier lifetime. By varying the pump power, detuning, and reverse-bias voltage, it is possible to generate frequency combs in cavities with both normal and anomalous dispersion at a wide range of wavelengths including 1.55$μ$m. Furthermore, a free-carrier self-pulsing instability leads to rich dynamics when the carrier lifetime is sufficiently long.
△ Less
Submitted 30 March, 2018; v1 submitted 31 January, 2018;
originally announced February 2018.
