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Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition
Authors:
Abhijit Biswas,
Gustavo A. Alvarez,
Tao Li,
Joyce Christiansen-Salameh,
Eugene Jeong,
Anand B. Puthirath,
Sathvik Ajay Iyengar,
Chenxi Li,
Tia Gray,
Xiang Zhang,
Tymofii S. Pieshkov,
Harikishan Kannan,
Jacob Elkins,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Elias J. Garratt,
Bradford B. Pate,
Tony G. Ivanov,
Yuji Zhao,
Zhiting Tian,
Pulickel M. Ajayan
Abstract:
Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition a…
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Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20 MW/(m2K). Our findings are useful for various device related applications based on UWBG BN/diamond heterostructures.
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Submitted 20 September, 2023; v1 submitted 22 May, 2023;
originally announced May 2023.
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Argon milling induced decoherence mechanisms in superconducting quantum circuits
Authors:
J. Van Damme,
Ts. Ivanov,
P. Favia,
T. Conard,
J. Verjauw,
R. Acharya,
D. Perez Lozano,
B. Raes,
J. Van de Vondel,
A. M. Vadiraj,
M. Mongillo,
D. Wan,
J. De Boeck,
A. Potočnik,
K. De Greve
Abstract:
The fabrication of superconducting circuits requires multiple deposition, etch and cleaning steps, each possibly introducing material property changes and microscopic defects. In this work, we specifically investigate the process of argon milling, a potentially coherence limiting step, using niobium and aluminum superconducting resonators as a proxy for surface-limited behavior of qubits. We find…
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The fabrication of superconducting circuits requires multiple deposition, etch and cleaning steps, each possibly introducing material property changes and microscopic defects. In this work, we specifically investigate the process of argon milling, a potentially coherence limiting step, using niobium and aluminum superconducting resonators as a proxy for surface-limited behavior of qubits. We find that niobium microwave resonators exhibit an order of magnitude decrease in quality-factors after surface argon milling, while aluminum resonators are resilient to the same process. Extensive analysis of the niobium surface shows no change in the suboxide composition due to argon milling, while two-tone spectroscopy measurements reveal an increase in two-level system electrical dipole moments, indicating a structurally altered niobium oxide hosting larger two-level system defects. However, a short dry etch can fully recover the argon milling induced losses on niobium, offering a potential route towards state-of-the-art overlap Josephson junction qubits with niobium circuitry.
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Submitted 7 February, 2023;
originally announced February 2023.
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Temperature Sensitivity of $^{14}\mathrm{NV}$ and $^{15}\mathrm{NV}$ Ground State Manifolds
Authors:
Sean Lourette,
Andrey Jarmola,
Victor M. Acosta,
A. Glen Birdwell,
Dmitry Budker,
Marcus W. Doherty,
Tony Ivanov,
Vladimir S. Malinovsky
Abstract:
We measure electron and nuclear spin transition frequencies in the ground state of nitrogen-vacancy (NV) centers in diamond for two nitrogen isotopes ($^{14}\mathrm{NV}$ and $^{15}\mathrm{NV}$) over temperatures ranging from 77 K to 400 K. Measurements are performed using Ramsey interferometry and direct optical readout of the nuclear and electron spins. We extract coupling parameters $Q$ (for…
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We measure electron and nuclear spin transition frequencies in the ground state of nitrogen-vacancy (NV) centers in diamond for two nitrogen isotopes ($^{14}\mathrm{NV}$ and $^{15}\mathrm{NV}$) over temperatures ranging from 77 K to 400 K. Measurements are performed using Ramsey interferometry and direct optical readout of the nuclear and electron spins. We extract coupling parameters $Q$ (for $^{14}\mathrm{NV}$), $D$, $A_{||}$, $A_{\perp}$, $γ_e/γ_n$, and their temperature dependences for both isotopes. The temperature dependences of the nuclear-spin transitions within the $m_s = 0$ spin manifold near room temperature are found to be +0.52(1) ppm/K for $^{14}\mathrm{NV}$ ($|m_I=-1> \leftrightarrow |m_I=+1>$) and -1.1(1) ppm/K for $^{15}\mathrm{NV}$ ($|m_I=-1/2> \leftrightarrow |m_I=+1/2>$). An isotopic shift in the zero-field splitting parameter $D$ between $^{14}\mathrm{NV}$ and $^{15}\mathrm{NV}$ is measured to be $\sim$ 120 kHz. Residual transverse magnetic fields are observed to shift the nuclear spin transition frequencies, especially for $^{15}\mathrm{NV}$. We have precisely determined the set of parameters relevant for the development of nuclear-spin-based diamond quantum sensors with greatly reduced sensitivity to environmental factors.
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Submitted 23 December, 2022;
originally announced December 2022.
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Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers
Authors:
D. P. Lozano,
M. Mongillo,
X. Piao,
S. Couet,
D. Wan,
Y. Canvel,
A. M. Vadiraj,
Ts. Ivanov,
J. Verjauw,
R. Acharya,
J. Van Damme,
F. A. Mohiyaddin,
J. Jussot,
P. P. Gowda,
A. Pacco,
B. Raes,
J. Van de Vondel,
I. P. Radu,
B. Govoreanu,
J. Swerts,
A. Potočnik,
K. De Greve
Abstract:
The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised…
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The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.
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Submitted 30 November, 2022; v1 submitted 29 November, 2022;
originally announced November 2022.
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Overcoming I/O bottleneck in superconducting quantum computing: multiplexed qubit control with ultra-low-power, base-temperature cryo-CMOS multiplexer
Authors:
Rohith Acharya,
Steven Brebels,
Alexander Grill,
Jeroen Verjauw,
Tsvetan Ivanov,
Daniel Perez Lozano,
Danny Wan,
Jacques van Damme,
A. M. Vadiraj,
Massimo Mongillo,
Bogdan Govoreanu,
Jan Craninckx,
I. P. Radu,
Kristiaan de Greve,
Georges Gielen,
Francky Catthoor,
Anton Potočnik
Abstract:
Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-…
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Large-scale superconducting quantum computing systems entail high-fidelity control and readout of large numbers of qubits at millikelvin temperatures, resulting in a massive input-output bottleneck. Cryo-electronics, based on complementary metal-oxide-semiconductor (CMOS) technology, may offer a scalable and versatile solution to overcome this bottleneck. However, detrimental effects due to cross-coupling between the electronic and thermal noise generated during cryo-electronics operation and the qubits need to be avoided. Here we present an ultra-low power radio-frequency (RF) multiplexing cryo-electronics solution operating below 15 mK that allows for control and interfacing of superconducting qubits with minimal cross-coupling. We benchmark its performance by interfacing it with a superconducting qubit and observe that the qubit's relaxation times ($T_1$) are unaffected, while the coherence times ($T_2$) are only minimally affected in both static and dynamic operation. Using the multiplexer, single qubit gate fidelities above 99.9%, i.e., well above the threshold for surface-code based quantum error-correction, can be achieved with appropriate thermal filtering. In addition, we demonstrate the capability of time-division-multiplexed qubit control by dynamically windowing calibrated qubit control pulses. Our results show that cryo-CMOS multiplexers could be used to significantly reduce the wiring resources for large-scale qubit device characterization, large-scale quantum processor control and quantum error correction protocols.
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Submitted 26 September, 2022;
originally announced September 2022.
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Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
Authors:
Abhijit Biswas,
Mingfei Xu,
Kai Fu,
**gan Zhou,
Rui Xu,
Anand B. Puthirath,
Jordan A. Hachtel,
Chenxi Li,
Sathvik Ajay Iyengar,
Harikishan Kannan,
Xiang Zhang,
Tia Gray,
Robert Vajtai,
A. Glen Birdwell,
Mahesh R. Neupane,
Dmitry A. Ruzmetov,
Pankaj B. Shah,
Tony Ivanov,
Hanyu Zhu,
Yuji Zhao,
Pulickel M. Ajayan
Abstract:
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the gr…
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Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.
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Submitted 1 September, 2022;
originally announced September 2022.
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Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications
Authors:
Abhijit Biswas,
Rishi Maiti,
Frank Lee,
Cecilia Y. Chen,
Tao Li,
Anand B. Puthirath,
Sathvik Ajay Iyengar,
Chenxi Li,
Xiang Zhang,
Harikishan Kannan,
Tia Gray,
Md Abid Shahriar Rahman Saadi,
Jacob Elkins,
A. Glen Birdwell,
Mahesh R. Neupane,
Pankaj B. Shah,
Dmitry A. Ruzmetov,
Tony G. Ivanov,
Robert Vajtai,
Yuji Zhao,
Alexander L. Gaeta,
Manoj Tripathi,
Alan Dalton,
Pulickel M. Ajayan
Abstract:
Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diff…
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Room temperature growth of two-dimensional van der Waals (2D-vdW) materials is indispensable for state-of-the-art nanotechnology. The low temperature growth supersedes the requirement of elevated growth temperature accompanied with high thermal budgets. Moreover, for electronic applications, low or room temperature growth reduces the possibility of intrinsic film-substrate interfacial thermal diffusion related deterioration of functional properties and consequent device performance. Here, we demonstrated the growth of ultrawide-bandgap boron nitride (BN) at room temperature by using the pulsed laser deposition (PLD) process and demonstrated various functionalities for potential applications. Comprehensive chemical, spectroscopic and microscopic characterization confirms the growth of ordered nanosheet-like hexagonal BN. Functionally, nanosheets show hydrophobicity, high lubricity (low coefficient of friction), low refractive index within the visible to near-infrared wavelength range, and room temperature single-photon quantum emission. Our work unveils an important step that brings a plethora of applications potential for room temperature grown h-BN nanosheets as it can be feasible on any given substrate, thus creating a scenario for h-BN on demand at frugal thermal budget.
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Submitted 12 October, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
Authors:
J. Verjauw,
R. Acharya,
J. Van Damme,
Ts. Ivanov,
D. Perez Lozano,
F. A. Mohiyaddin,
D. Wan,
J. Jussot,
A. M. Vadiraj,
M. Mongillo,
M. Heyns,
I. Radu,
B. Govoreanu,
A. Potočnik
Abstract:
As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and li…
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As the superconducting qubit platform matures towards ever-larger scales in the race towards a practical quantum computer, limitations due to qubit inhomogeneity through lack of process control become apparent. To benefit from the advanced process control in industry-scale CMOS fabrication facilities, different processing methods will be required. In particular, the double-angle evaporation and lift-off techniques used for current, state-of-the art superconducting qubits are generally incompatible with modern day manufacturable processes. Here, we demonstrate a fully CMOS compatible qubit fabrication method, and show results from overlap Josephson junction devices with long coherence and relaxation times, on par with the state-of-the-art. We experimentally verify that Argon milling - the critical step during junction fabrication - and a subtractive etch process nevertheless result in qubits with average qubit energy relaxation times T1 reaching 70 $μ$s, with maximum values exceeding 100 $μ$s. Furthermore, we show that our results are still limited by surface losses and not, crucially, by junction losses. The presented fabrication process therefore heralds an important milestone towards a manufacturable 300 mm CMOS process for high-coherence superconducting qubits and has the potential to advance the scaling of superconducting device architectures.
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Submitted 21 February, 2022;
originally announced February 2022.
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Demonstration of diamond nuclear spin gyroscope
Authors:
Andrey Jarmola,
Sean Lourette,
Victor M. Acosta,
A. Glen Birdwell,
Peter Blümler,
Dmitry Budker,
Tony Ivanov,
Vladimir S. Malinovsky
Abstract:
We demonstrate operation of a rotation sensor based on the $^{14}$N nuclear spins intrinsic to nitrogen-vacancy (NV) color centers in diamond. The sensor employs optical polarization and readout of the nuclei and a radio-frequency double-quantum pulse protocol that monitors $^{14}$N nuclear spin precession. This measurement protocol suppresses the sensitivity to temperature variations in the…
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We demonstrate operation of a rotation sensor based on the $^{14}$N nuclear spins intrinsic to nitrogen-vacancy (NV) color centers in diamond. The sensor employs optical polarization and readout of the nuclei and a radio-frequency double-quantum pulse protocol that monitors $^{14}$N nuclear spin precession. This measurement protocol suppresses the sensitivity to temperature variations in the $^{14}$N quadrupole splitting, and it does not require microwave pulses resonant with the NV electron spin transitions. The device was tested on a rotation platform and demonstrated a sensitivity of 4.7 $^{\circ}/\sqrt{\rm{s}}$ (13 mHz/$\sqrt{\rm{Hz}}$), with bias stability of 0.4 $^{\circ}$/s (1.1 mHz).
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Submitted 9 July, 2021;
originally announced July 2021.
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A Reactive Molecular Dynamics Study of Hydrogenation on Diamond Surfaces
Authors:
Eliezer F. Oliveira,
Mahesh R. Neupane,
Chenxi Li,
Harikishan Kannan,
Xiang Zhang,
Anand B. Puthirath,
Pankaj B. Shah,
A. Glen Birdwell,
Tony G. Ivanov,
Robert Vajtai,
Douglas S. Galvao,
Pulickel M. Ajayan
Abstract:
Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond s…
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Hydrogenated diamond has been regarded as a promising material in electronic device applications, especially in field-effect transistors (FETs). However, the quality of diamond hydrogenation has not yet been established, nor has the specific orientation that would provide the optimum hydrogen coverage. In addition, most theoretical work in the literature use models with 100% hydrogenated diamond surfaces to study electronic properties, which is far from the experimentally observed hydrogen coverage. In this work, we have carried out a detailed study using fully atomistic reactive molecular dynamics (MD) simulations on low indices diamond surfaces i.e. (001), (013), (110), (113) and (111) to evaluate the quality and hydrogenation thresholds on different diamond surfaces and their possible effects on electronic properties. Our simulation results indicate that the 100% surface hydrogenation in these surfaces is hard to achieve because of the steric repulsion between the terminated hydrogen atoms. Among all the considered surfaces, the (001), (110), and (113) surfaces incorporate a larger number of hydrogen atoms and passivate the surface dangling bonds. Our results on hydrogen stability also suggest that these surfaces with optimum hydrogen coverage are robust under extreme conditions and could provide homogeneous p-type surface conductivity in the diamond surfaces, a key requirement for high-field, high-frequency device applications.
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Submitted 25 May, 2021;
originally announced May 2021.
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A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
Authors:
R. Li,
N. I. Dumoulin Stuyck,
S. Kubicek,
J. Jussot,
B. T. Chan,
F. A. Mohiyaddin,
A. Elsayed,
M. Shehata,
G. Simion,
C. Godfrin,
Y. Canvel,
Ts. Ivanov,
L. Goux,
B. Govoreanu,
I. P. Radu
Abstract:
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are charact…
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We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.
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Submitted 7 February, 2021;
originally announced February 2021.
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Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators
Authors:
J. Verjauw,
A. Potočnik,
M. Mongillo,
R. Acharya,
F. Mohiyaddin,
G. Simion,
A. Pacco,
Ts. Ivanov,
D. Wan,
A. Vanleenhove,
L. Souriau,
J. Jussot,
A. Thiam,
J. Swerts,
X. Piao,
S. Couet,
M. Heyns,
B. Govoreanu,
I. Radu
Abstract:
The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate…
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The coherence of state-of-the-art superconducting qubit devices is predominantly limited by two-level-system defects, found primarily at amorphous interface layers. Reducing microwave loss from these interfaces by proper surface treatments is key to push the device performance forward. Here, we study niobium resonators after removing the native oxides with a hydrofluoric acid etch. We investigate the reappearance of microwave losses introduced by surface oxides that grow after exposure to the ambient environment. We find that losses in quantum devices are reduced by an order of magnitude, with internal Q-factors reaching up to 7 $\cdot$ 10$^6$ in the single photon regime, when devices are exposed to ambient conditions for 16 min. Furthermore, we observe that Nb2O5 is the only surface oxide that grows significantly within the first 200 hours, following the extended Cabrera-Mott growth model. In this time, microwave losses scale linearly with the Nb$_2$O$_5$ thickness, with an extracted loss tangent tan$δ$ = 9.9 $\cdot$ 10$^{-3}$. Our findings are of particular interest for devices spanning from superconducting qubits, quantum-limited amplifiers, microwave kinetic inductance detectors to single photon detectors.
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Submitted 22 December, 2020; v1 submitted 19 December, 2020;
originally announced December 2020.
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Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation
Authors:
Anton Potočnik,
Steven Brebels,
Jeroen Verjauw,
Rohith Acharya,
Alexander Grill,
Danny Wan,
Massimo Mongillo,
Ruoyu Li,
Tsvetan Ivanov,
Steven Van Winckel,
Fahd A. Mohiyaddin,
Bogdan Govoreanu,
Jan Craninckx,
I. P. Radu
Abstract:
Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of l…
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Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale Quantum (NISQ) technology, each quantum device is controlled and characterised though a dedicated signal line between room temperature and base temperature of a dilution refrigerator. This approach is not scalable and is currently limiting the development of large-scale quantum system integration and quantum device characterisation. Here we demonstrate a custom designed cryo-CMOS multiplexer operating at 32 mK. The multiplexer exhibits excellent microwave properties up to 10 GHz at room and millikelvin temperatures. We have increased the characterisation throughput with the multiplexer by measuring four high-quality factor superconducting resonators using a single input and output line in a dilution refrigerator. Our work lays the foundation for large-scale microwave quantum device characterisation and has the perspective to address the wiring problem of future large-scale quantum computers.
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Submitted 14 September, 2021; v1 submitted 23 November, 2020;
originally announced November 2020.
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A Roadmap for HEP Software and Computing R&D for the 2020s
Authors:
Johannes Albrecht,
Antonio Augusto Alves Jr,
Guilherme Amadio,
Giuseppe Andronico,
Nguyen Anh-Ky,
Laurent Aphecetche,
John Apostolakis,
Makoto Asai,
Luca Atzori,
Marian Babik,
Giuseppe Bagliesi,
Marilena Bandieramonte,
Sunanda Banerjee,
Martin Barisits,
Lothar A. T. Bauerdick,
Stefano Belforte,
Douglas Benjamin,
Catrin Bernius,
Wahid Bhimji,
Riccardo Maria Bianchi,
Ian Bird,
Catherine Biscarat,
Jakob Blomer,
Kenneth Bloom,
Tommaso Boccali
, et al. (285 additional authors not shown)
Abstract:
Particle physics has an ambitious and broad experimental programme for the coming decades. This programme requires large investments in detector hardware, either to build new facilities and experiments, or to upgrade existing ones. Similarly, it requires commensurate investment in the R&D of software to acquire, manage, process, and analyse the shear amounts of data to be recorded. In planning for…
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Particle physics has an ambitious and broad experimental programme for the coming decades. This programme requires large investments in detector hardware, either to build new facilities and experiments, or to upgrade existing ones. Similarly, it requires commensurate investment in the R&D of software to acquire, manage, process, and analyse the shear amounts of data to be recorded. In planning for the HL-LHC in particular, it is critical that all of the collaborating stakeholders agree on the software goals and priorities, and that the efforts complement each other. In this spirit, this white paper describes the R&D activities required to prepare for this software upgrade.
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Submitted 19 December, 2018; v1 submitted 18 December, 2017;
originally announced December 2017.
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Synchrotron VUV radiation studies of the D^1Π_u State of H_2
Authors:
G. D. Dickenson,
T. I. Ivanov,
M. Roudjane,
N. de Oliveira,
D. Joyeux,
L. Nahon,
W. -Ü L. Tchang-Brillet,
M. Glass-Maujean,
I. Haar,
A. Ehresmann,
W. Ubachs
Abstract:
The 3pπD^1Π_u state of the H_2 molecule was reinvestigated with different techniques at two synchrotron installations. The Fourier-Transform spectrometer in the vacuum ultraviolet wavelength range of the DESIRS beamline at the SOLEIL synchrotron was used for recording absorption spectra of the D^1Π_u state at high resolution and high absolute accuracy, limited only by the Doppler contribution at 1…
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The 3pπD^1Π_u state of the H_2 molecule was reinvestigated with different techniques at two synchrotron installations. The Fourier-Transform spectrometer in the vacuum ultraviolet wavelength range of the DESIRS beamline at the SOLEIL synchrotron was used for recording absorption spectra of the D^1Π_u state at high resolution and high absolute accuracy, limited only by the Doppler contribution at 100 K. From these measurements line positions were extracted, in particular for the narrow resonances involving ^1Π_u^- states, with an accuracy estimated at 0.06 cm^{-1} . The new data also closely match MQDT-calculations performed for the Π^- components observed via the narrow Q-lines. The Λ-doubling in the D^1Π_u state was determined up to v=17. The 10 m normal incidence scanning monochromator at the beamline U125/2 of the BESSY II synchrotron, combined with a home built target chamber and equipped with a variety of detectors was used to unravel information on ionization, dissociation and intramolecular fluorescence decay for the D^1Π_u vibrational series. The combined results yield accurate information of the characteristic Beutler-Fano profiles associated with the strongly predissociated Π_u^+ parity components of the D^1Π_u-levels. Values for the parameters describing the predissociation width as well as the Fano-q line shape parameters for the J=1 and J=2 rotational states were determined for the sequence of vibrational quantum numbers up to v=17.
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Submitted 3 January, 2013;
originally announced January 2013.
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VUV Spectroscopic Study of the D^1ΠState of Molecular Deuterium
Authors:
G. D. Dickenson,
T. I. Ivanov,
W. Ubachs,
M. Roudjane,
N. de Oliveira,
D. Joyeux,
L. Nahon,
W. -Ü L. Tchang-Brillet,
M. Glass-Maujean,
H. Schmoranzer,
A. Knie,
S. Kübler,
A. Ehresmann
Abstract:
The D^1Π_u - X^1Σ_g^+ absorption system of molecular deuterium has been re-investigated using the VUV Fourier -Transform (FT) spectrometer at the DESIRS beamline of the synchrotron SOLEIL and photon-induced fluorescence spectrometry (PIFS) using the 10 m normal incidence monochromator at the synchrotron BESSY II. Using the FT spectrometer absorption spectra in the range 72 - 82 nm were recorded in…
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The D^1Π_u - X^1Σ_g^+ absorption system of molecular deuterium has been re-investigated using the VUV Fourier -Transform (FT) spectrometer at the DESIRS beamline of the synchrotron SOLEIL and photon-induced fluorescence spectrometry (PIFS) using the 10 m normal incidence monochromator at the synchrotron BESSY II. Using the FT spectrometer absorption spectra in the range 72 - 82 nm were recorded in quasi static gas at 100 K and in a free flowing jet at a spectroscopic resolution of 0.50 and 0.20 cm^{-1} respectively . The narrow Q-branch transitions, probing states of Π^- symmetry, were observed up to vibrational level v = 22. The states of Π^+ symmetry, known to be broadened due to predissociation and giving rise to asymmetric Beutler-Fano resonances, were studied up to v = 18. The 10 m normal incidence beamline setup at BESSY II was used to simultaneously record absorption, dissociation, ionization and fluorescence decay channels from which information on the line intensities, predissociated widths, and Fano q-parameters were extracted. R-branch transitions were observed up to v = 23 for J = 1-3 as well as several transitions for J = 4 and 5 up to v = 22 and 18 respectively. The Q-branch transitions are found to weakly predissociate and were observed from v = 8 to the final vibrational level of the state v = 23. The spectroscopic study is supported by two theoretical frameworks. Results on the Π^- symmetry states are compared to ab initio multi-channel-quantum defect theory (MQDT) calculations, demonstrating that these calculations are accurate to within 0.5 cm^-1.
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Submitted 3 January, 2013;
originally announced January 2013.
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QED effects in molecules: test on rotational quantum states of H$_2$
Authors:
E. J. Salumbides,
G. D. Dickenson,
T. I. Ivanov,
W. Ubachs
Abstract:
Quantum electrodynamic effects have been systematically tested in the progression of rotational quantum states in the $X ^{1}Σ_{g}^{+}, v=0$ vibronic ground state of molecular hydrogen. High-precision Doppler-free spectroscopy of the $EF ^{1}Σ_{g}^{+} - X ^{1}Σ_{g}^{+}$ (0,0) band was performed with 0.005 cm$^{-1}$ accuracy on rotationally-hot H$_2$ (with rotational quantum states J up to 16). QED…
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Quantum electrodynamic effects have been systematically tested in the progression of rotational quantum states in the $X ^{1}Σ_{g}^{+}, v=0$ vibronic ground state of molecular hydrogen. High-precision Doppler-free spectroscopy of the $EF ^{1}Σ_{g}^{+} - X ^{1}Σ_{g}^{+}$ (0,0) band was performed with 0.005 cm$^{-1}$ accuracy on rotationally-hot H$_2$ (with rotational quantum states J up to 16). QED and relativistic contributions to rotational level energies as high as 0.13 cm$^{-1}$ are extracted, and are in perfect agreement with recent calculations of QED and high-order relativistic effects for the H$_2$ ground state.
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Submitted 19 July, 2011;
originally announced July 2011.
