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GLaD: Synergizing Molecular Graphs and Language Descriptors for Enhanced Power Conversion Efficiency Prediction in Organic Photovoltaic Devices
Authors:
Thao Nguyen,
Tiara Torres-Flores,
Changhyun Hwang,
Carl Edwards,
Ying Diao,
Heng Ji
Abstract:
This paper presents a novel approach for predicting Power Conversion Efficiency (PCE) of Organic Photovoltaic (OPV) devices, called GLaD: synergizing molecular Graphs and Language Descriptors for enhanced PCE prediction. Due to the lack of high-quality experimental data, we collect a dataset consisting of 500 pairs of OPV donor and acceptor molecules along with their corresponding PCE values, whic…
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This paper presents a novel approach for predicting Power Conversion Efficiency (PCE) of Organic Photovoltaic (OPV) devices, called GLaD: synergizing molecular Graphs and Language Descriptors for enhanced PCE prediction. Due to the lack of high-quality experimental data, we collect a dataset consisting of 500 pairs of OPV donor and acceptor molecules along with their corresponding PCE values, which we utilize as the training data for our predictive model. In this low-data regime, GLaD leverages properties learned from large language models (LLMs) pretrained on extensive scientific literature to enrich molecular structural representations, allowing for a multimodal representation of molecules. GLaD achieves precise predictions of PCE, thereby facilitating the synthesis of new OPV molecules with improved efficiency. Furthermore, GLaD showcases versatility, as it applies to a range of molecular property prediction tasks (BBBP, BACE, ClinTox, and SIDER), not limited to those concerning OPV materials. Especially, GLaD proves valuable for tasks in low-data regimes within the chemical space, as it enriches molecular representations by incorporating molecular property descriptions learned from large-scale pretraining. This capability is significant in real-world scientific endeavors like drug and material discovery, where access to comprehensive data is crucial for informed decision-making and efficient exploration of the chemical space.
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Submitted 23 May, 2024;
originally announced May 2024.
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FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
Authors:
J. Casamento,
K. Nomoto,
T. S. Nguyen,
H. Lee,
C. Savant,
L. Li,
A. Hickman,
T. Maeda,
J. Encomendero,
V. Gund,
A. Lal,
J. C. M. Hwang,
H. G. Xing,
D. Jena
Abstract:
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high…
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We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics.
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Submitted 27 February, 2023;
originally announced February 2023.
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Optimizing the magnon-phonon cooperativity in planar geometries
Authors:
K. An,
C. Kim,
K. -W. Moon,
R. Kohno,
G. Olivetti,
G. de Loubens,
N. Vukadinovic,
J. Ben Youssef,
C. Hwang,
O. Klein
Abstract:
Optimizing the cooperativity between two distinct particles is an important feature of quantum information processing. Of particular interest is the coupling between spin and phonon, which allows for integrated long range communication between gates operating at GHz frequency. Using local light scattering, we show that, in magnetic planar geometries, this attribute can be tuned by adjusting the or…
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Optimizing the cooperativity between two distinct particles is an important feature of quantum information processing. Of particular interest is the coupling between spin and phonon, which allows for integrated long range communication between gates operating at GHz frequency. Using local light scattering, we show that, in magnetic planar geometries, this attribute can be tuned by adjusting the orientation and strength of an external magnetic field. The coupling strength is enhanced by about a factor of 2 for the out-of-plane magnetized geometry where the Kittel mode is coupled to circularly polarized phonons, compared to the in-plane one where it couples to linearly polarized phonons. We also show that the overlap between magnon and phonon is maximized by matching the Kittel frequency with an acoustic resonance that satisfies the half-wave plate condition across the magnetic film thickness. Taking the frequency dependence of the dam** into account, a maximum cooperativity of about 6 is reached in garnets for the normal configuration near 5.5 GHz.
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Submitted 15 February, 2024; v1 submitted 20 February, 2023;
originally announced February 2023.
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Alternative understanding of the skyrmion Hall effect based on one-dimensional domain wall motion
Authors:
Kyoung-Woong Moon,
Jungbum Yoon,
Changsoo Kim,
Jae-Hun Sim,
Se Kwon Kim,
Soong-Geun Je,
Chanyong Hwang
Abstract:
A moving magnetic skyrmion exhibits transverse deflection. This so-called skyrmion Hall effect has been explained by the Thiele equation. Here, we provide an alternative interpretation of the skyrmion Hall effect based on the dynamics of domain walls enclosing the skyrmion. We relate the spin-torque-induced local rotation of the domain wall segments to the shift of the skyrmion core, explaining th…
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A moving magnetic skyrmion exhibits transverse deflection. This so-called skyrmion Hall effect has been explained by the Thiele equation. Here, we provide an alternative interpretation of the skyrmion Hall effect based on the dynamics of domain walls enclosing the skyrmion. We relate the spin-torque-induced local rotation of the domain wall segments to the shift of the skyrmion core, explaining the skyrmion Hall effect at the micromagnetic level. Bases on our intuitive interpretation, we also show that the skyrmion Hall effect can be suppressed by combining the spin-transfer and spin-orbit torques, whereby removing the major obstacle to utilizing skyrmions in devices.
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Submitted 9 November, 2022; v1 submitted 9 November, 2022;
originally announced November 2022.
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A translation of Maurice Philippson's "Principles of the Electrical Resistance of Living Tissue"
Authors:
James C. M. Hwang,
Olivia Peytral-Rieu
Abstract:
The impedance of one cubic centimeter of living tissues of potato and guinea pig were measured from 500 Hz to 3 MHz. In general, the magnitude of the impedance was found to monotonically decrease with increasing frequency. This implies that the membrane of each cell in the tissue acts like a capacitor, which is in parallel with a membrane resistance. The membrane resistance and capacitance togethe…
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The impedance of one cubic centimeter of living tissues of potato and guinea pig were measured from 500 Hz to 3 MHz. In general, the magnitude of the impedance was found to monotonically decrease with increasing frequency. This implies that the membrane of each cell in the tissue acts like a capacitor, which is in parallel with a membrane resistance. The membrane resistance and capacitance together are in series with a protoplasm resistance. Experimentally, it was observed that after the guinea pig died, the membrane resistance of its muscle decreased from 1.49 to 0.79 kilo-ohm while the protoplasm resistance remained around 0.11 kilo-ohm. By contrast, when the potato started to germinate, the protoplasm resistance decreased from 0.25 to 0.10 kilo-ohm, while its membrane resistance remained around 4 kilo-ohms.
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Submitted 28 October, 2020;
originally announced May 2021.
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InterPhon: Ab initio Interface Phonon Calculations within a 3D Electronic Structure Framework
Authors:
In Won Yeu,
Gyuseung Han,
Kun Hee Ye,
Cheol Seong Hwang,
Jung-Hae Choi
Abstract:
This work provides the community with an easily executable open-source Python package designed to automize the evaluation of Interfacial Phonons (InterPhon). Its strategy of arbitrarily defining the interfacial region and periodicity alleviates the excessive computational cost in applying ab initio phonon calculations to interfaces and enables efficient extraction of interfacial phonons. InterPhon…
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This work provides the community with an easily executable open-source Python package designed to automize the evaluation of Interfacial Phonons (InterPhon). Its strategy of arbitrarily defining the interfacial region and periodicity alleviates the excessive computational cost in applying ab initio phonon calculations to interfaces and enables efficient extraction of interfacial phonons. InterPhon makes it possible to apply all of the phonon-based predictions that have been available for bulk systems, to interfacial systems. The first example, in which this package was applied to InAs surfaces, demonstrates a systematic structure search for unexplored surface reconstructions, navigated by the imaginary mode of surface phonons. It eventually explains the anisotropic surface vibrations of the polar crystal. The second example, involving oxygen adsorption on Cu, reveals adsorption-induced vibrational change and its contribution to energetic stability. The third example, on a Si/GaAs interface, shows distinct vibrational patterns depending on interfacial structures. It leads to a prediction regarding the structural transition of interfaces and unveils the processing conditions for spontaneous growth of GaAs nanowires on Si. High-level automation in InterPhon will be of great help in elucidating interfacial atomic dynamics and in implementing an automated computational workflow for diverse interfacial systems.
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Submitted 21 April, 2021; v1 submitted 7 December, 2020;
originally announced December 2020.
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Coherent ac spin current transmission across an antiferromagnetic CoO insulator
Authors:
Q. Li,
M. Yang,
C. Klewe,
P. Shafer,
A. T. N'Diaye,
D. Hou,
T. Y. Wang,
N. Gao,
E. Saitoh,
C. Hwang,
R. J. Hicken,
J. Li,
E. Arenholz,
Z. Q. Qiu
Abstract:
The recent discovery of spin-current transmission through antiferromagnetic (AFM) insulating materials opens up unprecedented opportunities for fundamental physics and spintronics applications. The great mystery currently surrounding this topic is: how could THz AFM magnons mediate a GHz spin current? This mis-match of frequencies becomes particularly critical for the case of coherent ac spin-curr…
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The recent discovery of spin-current transmission through antiferromagnetic (AFM) insulating materials opens up unprecedented opportunities for fundamental physics and spintronics applications. The great mystery currently surrounding this topic is: how could THz AFM magnons mediate a GHz spin current? This mis-match of frequencies becomes particularly critical for the case of coherent ac spin-current, raising the fundamental question of whether a GHz ac spin-current can ever keep its coherence inside an AFM insulator and so drive the spin precession of another FM layer coherently? Utilizing element- and time-resolved x-ray pump-probe measurements on Py/Ag/CoO/Ag/Fe75Co25/MgO(001) heterostructures, we demonstrate that a coherent GHz ac spin current pumped by the permalloy (Py) ferromagnetic resonance (FMR) can transmit coherently across an antiferromagnetic CoO insulating layer to drive a coherent spin precession of the FM Fe75Co25 layer. Further measurement results favor thermal magnons rather than evanescent spin waves as the mediator of the coherent ac spin current in CoO.
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Submitted 1 June, 2019;
originally announced June 2019.
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Inverted Scanning Microwave Microscope for In Vitro Imaging and Characterization of Biological Cells
Authors:
Marco Farina,
Xin **,
Gianluca Fabi,
Eleonora Pavoni,
Andrea di Donato,
Davide Mencarelli,
Antonio Morini,
Francesco Piacenza,
Richard Al Hadi,
Yan Zhao,
Tiziana Pietrangelo,
Xuanhong Cheng,
James C. M. Hwang
Abstract:
This paper presents for the first time an innovative instrument called an inverted scanning microwave microscope (iSMM), which is capable of noninvasive and label-free imaging and characterization of intracellular structures of a live cell on the nanometer scale. In particular, the iSMM is sensitive to not only surface structures, but also ectromagnetic properties up to one micrometer below the su…
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This paper presents for the first time an innovative instrument called an inverted scanning microwave microscope (iSMM), which is capable of noninvasive and label-free imaging and characterization of intracellular structures of a live cell on the nanometer scale. In particular, the iSMM is sensitive to not only surface structures, but also ectromagnetic properties up to one micrometer below the surface. Conveniently, the iSMM can be constructed through straightforward conversion of any scanning probe microscope, such as the atomic force microscope or the scanning tunneling microscope, with a simple metal probe to outperform traditional SMM in terms of ruggedness, and width, sensitivity and dynamic range. By contrast, the application of the traditional SMM to date has been limited to mainly surface physics and semiconductor technology, because the traditional SMM requires a fragile and expensive probe and is incompatible with saline solution or live biological cells.
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Submitted 13 March, 2019; v1 submitted 11 March, 2019;
originally announced March 2019.
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Au/Ag bimetallic nanocomposites as a highly sensitive plasmonic material
Authors:
Taerin Chung,
Charles Soon Hong Hwang,
Myeong-Su Ahn,
Ki-Hun Jeong
Abstract:
We report Au/Ag bimetallic nanocomposites as a highly sensitive plasmonic material. A unit approach via a three-dimensional numerical modeling is introduced to observe collective plasmon resonance in Au/Ag bimetallic nanocomposites as well as Au mono-metallic nanoensembles. Au nanoensembles provide consistently identical plasmon wavelength, independent of inter-unit distance. In analogy with mono-…
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We report Au/Ag bimetallic nanocomposites as a highly sensitive plasmonic material. A unit approach via a three-dimensional numerical modeling is introduced to observe collective plasmon resonance in Au/Ag bimetallic nanocomposites as well as Au mono-metallic nanoensembles. Au nanoensembles provide consistently identical plasmon wavelength, independent of inter-unit distance. In analogy with mono-metallic nanoensembles, Au/Ag bimetallic nanocomposites distinctly feature converging dual plasmon resonance peaks to a single plasmon resonance peak, strongly depending on the packing density and the unit size. An effective unit size of bimetallic nanocomposites is below 2.5 nm in a subwavelength structure, which is small enough to feature bimetallic nanocomposites. As a result, the Au/Ag bimetallic nanocomposites clearly show exceptionally high sensitivity and figure-ofmerit (approximately 3 fold of conventional plasmon sensitivity and 4.3 fold of conventional plasmon FOM), resulting from coupled Au-Ag quadrupole bimetallic nanounits. This study provides essential rationales for Au/Ag bimetallic nanocomposites serving as a desirable and alternative plasmonic material for advanced nanoplasmonic sensing technologies.
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Submitted 27 June, 2018;
originally announced June 2018.
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Dynamics of liquid crystal on hexagonal lattice
Authors:
Muhammad Arslan Shehzad,
Junsu Lee,
Sang Hoon Park,
Imtisal Akhtar,
Muhammad Farooq Khan,
Sajjad Hussain,
Jonghwa Eom,
Jongwan Jung,
Gunn Kim,
Chanyong Hwang,
Yongho Seo
Abstract:
Nematic liquid crystal (LC) molecules adsorbed on two dimensional materials are aligned along the crystal directions of the hexagonal lattice. It was demonstrated that short electric pulses can reorient the aligned LC molecules in the preferred armchair direction of hexagonal boron nitride (h-BN). Several states with a variety of colors were obtained by changing the direction and strength of the e…
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Nematic liquid crystal (LC) molecules adsorbed on two dimensional materials are aligned along the crystal directions of the hexagonal lattice. It was demonstrated that short electric pulses can reorient the aligned LC molecules in the preferred armchair direction of hexagonal boron nitride (h-BN). Several states with a variety of colors were obtained by changing the direction and strength of the electric pulses. The ab initio calculations based on density functional theory was carried out to determine the favorable adsorption configurations of the LC molecules on the h-BN surface. A non-volatile display, in which pixel resolution can be determined by grains of hexagonal surface, is proposed, which can offer a pathway towards dynamic high-quality pixels with low power consumption, and could define a new paradigm for all non-volatile display applications.
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Submitted 1 June, 2018;
originally announced June 2018.
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Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2
Authors:
Kuanchen Xiong,
Lei Li,
Asher Madjar,
James C. M. Hwang,
Zhaoyang Lin,
Yu Huang,
Xiangfeng Duan,
Alexander Goritz,
Matthias Wietstruck,
Mehmet Kaynak
Abstract:
For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 °C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best performance to be reported. The DC performance of these devices were typical, but the RF performance, enabled by buried gates and on the order of 100 MHz, was reported for the…
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For the first time, thousands of RF MOSFETs were batch-fabricated on liquid-exfoliated MoS2 below 300 °C with nearly 100% yield. The large-scale fabrication with high yield allowed the average performance instead of the best performance to be reported. The DC performance of these devices were typical, but the RF performance, enabled by buried gates and on the order of 100 MHz, was reported for the first time for liquid-exfoliated MoS2. To resolve the dilemma of thin vs. thick films, gate recess was used on 20-nm thick films to improve the gate control while kee** the contact resistance lower than that on 10-nm films. These innovations may enable thin-film transistors to operate in the microwave range.
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Submitted 27 March, 2018;
originally announced March 2018.
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Rugged HBT Class-C Power Amplifiers with Base-Emitter Clam**
Authors:
Xi Luo,
Subrata Halder,
James C. M. Hwang
Abstract:
The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3:1 instead of 2:1 mismatch in CW operation, and 2.5:1 instead of 1.5:1 mismatch in pulse operation. In contrast to other approaches with emitter ballast, active feedback, or electrostatic…
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The ruggedness of HBT Class-C power amplifiers was improved by adding an anti-parallel diode to the amplifier input to limit the negative swing of the base-emitter voltage. The improved amplifier could withstand 3:1 instead of 2:1 mismatch in CW operation, and 2.5:1 instead of 1.5:1 mismatch in pulse operation. In contrast to other approaches with emitter ballast, active feedback, or electrostatic discharge protection circuits, the present approach is simple to implement and has negligible impact on overall amplifier output power, gain or efficiency.
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Submitted 27 July, 2017;
originally announced August 2017.
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Scaling and High-Frequency Performance of AlN/GaN HEMTs
Authors:
Xi Luo,
Subrata Halder,
Walter R. Curtice,
James C. M. Hwang,
Kelson D. Chabak,
Dennis E. Walker, Jr.,
Amir M. Dabiran
Abstract:
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase with inverse gate length and independent of gate width. For the first time, output power and efficiency were reported at the high end of Xband, and were c…
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Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 μm width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase with inverse gate length and independent of gate width. For the first time, output power and efficiency were reported at the high end of Xband, and were comparable to the best reported at 2 GHz and insensitive to gate length or width. These results suggest that the AlN/GaN HEMTs can be further scaled for even higher frequency and higher power performance.
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Submitted 27 July, 2017;
originally announced July 2017.
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Intermodulation distortion of actuated MEMS capacitive switches
Authors:
Xi Luo,
Yaqing Ning,
David Molinero,
Cristiano Palego,
James CM Hwang,
Charles L Goldsmith
Abstract:
For the first time, intermodulation distortion of micro-electromechanical capacitive switches in the actuated state was analyzed both theoretically and experimentally. The distortion, although higher than that of switches in the suspended state, was found to decrease with increasing bias voltage but to depend weakly on modulation frequencies between 55 kHz and 1.1 MHz. This dependence could be exp…
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For the first time, intermodulation distortion of micro-electromechanical capacitive switches in the actuated state was analyzed both theoretically and experimentally. The distortion, although higher than that of switches in the suspended state, was found to decrease with increasing bias voltage but to depend weakly on modulation frequencies between 55 kHz and 1.1 MHz. This dependence could be explained by the orders-of-magnitude increase of the spring constant when the switches were actuated. Additionally, the analysis suggested that increasing the spring constant and decreasing the contact roughness could improve the linearity of actuated switches. These results are critical to micro-electromechanical capacitive switches used in tuners, filters, phase shifters, etc. where the linearity of both suspended and actuated states are critical.
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Submitted 18 July, 2017;
originally announced July 2017.
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Scanning Microwave Microscopy of Aluminum CMOS Interconnect Lines Buried in Oxide and Water
Authors:
Xin **,
Kuanchen Xiong,
Roderick Marstell,
Nicholas C. Strandwitz,
James C. M. Hwang,
Marco Farina,
Alexander Göritz,
Matthias Wietstruck,
Mehmet Kaynak
Abstract:
Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13 um SiGe BiCMOS process. The results were compared with that obtained by using atomic force microscopy both in air and water. It was found the images in water was degraded by only approximately 60% from that in air.
Using a scanning microwave microscope, we imaged in water aluminum interconnect lines buried in aluminum and silicon oxides fabricated through a state-of-the-art 0.13 um SiGe BiCMOS process. The results were compared with that obtained by using atomic force microscopy both in air and water. It was found the images in water was degraded by only approximately 60% from that in air.
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Submitted 22 June, 2017;
originally announced June 2017.
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The structure and properties of graphene supported on gold nanoparticles
Authors:
Zoltán Osváth,
András Deák,
Krisztián Kertész,
György Molnár,
Gábor Vértesy,
Dániel Zámbó,
Chanyong Hwang,
László P. Biró
Abstract:
Graphene covered metal nanoparticles constitute a novel type of hybrid materials, which provide a unique platform to study plasmonic effects, surface-enhanced Raman scattering (SERS), and metal-graphene interactions at the nanoscale. Such a hybrid material is fabricated by transferring graphene grown by chemical vapor deposition onto closely spaced gold nanoparticles produced on a silica wafer. Th…
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Graphene covered metal nanoparticles constitute a novel type of hybrid materials, which provide a unique platform to study plasmonic effects, surface-enhanced Raman scattering (SERS), and metal-graphene interactions at the nanoscale. Such a hybrid material is fabricated by transferring graphene grown by chemical vapor deposition onto closely spaced gold nanoparticles produced on a silica wafer. The morphology and physical properties of nanoparticle-supported graphene is investigated by atomic force microscopy, optical reflectance spectroscopy, scanning tunneling microscopy and spectroscopy (STM/STS), and confocal Raman spectroscopy. This study shows that the graphene Raman peaks are enhanced by a factor which depends on the excitation wavelength, in accordance with the surface plasmon resonance of the gold nanoparticles, and also on the graphene-nanoparticle distance which is tuned by annealing at moderate temperatures. The observed SERS activity is correlated to the nanoscale corrugation of graphene. STM and STS measurements show that the local density of electronic states in graphene is modulated by the underlying gold nanoparticles.
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Submitted 27 April, 2015;
originally announced April 2015.
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Relativistic Effect of Velocity on Electric Charge and Lorentz Force
Authors:
K. C. Hwang
Abstract:
This paper has been withdrawn due to crucial errors.
This paper has been withdrawn due to crucial errors.
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Submitted 10 September, 1998; v1 submitted 22 July, 1998;
originally announced July 1998.
