Showing 1–50 of 51 results for author: Huili

Dualtronics: leveraging both faces of polar semiconductors

Authors: Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski, Zexuan Zhang, Anna Feduniewicz-Zmuda, Mikolaj Chlipala, Marcin Siekacz, David Muller, Huili Grace Xing, Debdeep Jena, Henryk Turski

Abstract: Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium)… ▽ More Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we show that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for dualtronics in polar semiconductors, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family. △ Less

Submitted 4 April, 2024; originally announced April 2024.

Nanoring Tamm Cavity in the Telecommunications O band

Authors: Huili Hou, David Dlaka, Jon Pugh, Ruth Oulton, Edmund Harbord

Abstract: Quantum and classical telecommunications require efficient sources of light. Semiconductorsources, owing to the high refractive index of the medium, often exploit photonic cavities to enhance the external emission of photons into a well-defined optical mode. Optical Tamm States (OTS), in which light is confined between a distributed Bragg reflector and a thin metal layer have attracted interest as… ▽ More Quantum and classical telecommunications require efficient sources of light. Semiconductorsources, owing to the high refractive index of the medium, often exploit photonic cavities to enhance the external emission of photons into a well-defined optical mode. Optical Tamm States (OTS), in which light is confined between a distributed Bragg reflector and a thin metal layer have attracted interest as confined Tamm structures are readily manufactureable broadband cavities. Their effficiency is limited however by the absorption inherent in the metal layer. We propose a nanoring Tamm structure in which a nanoscale patterned annular metasurface is exploited to reduce this absorption and thereby enhance emission efficiency. To this end, we present designs for a nanoring Tamm structure optimised for the telecommunications O band, and demonstrate a near doubling of output efficiency (35%) over an analogous solid disc confined Tamm structure (18%). Simulations of designs optimised for different wavelengths are suggestive of annular coupling between the Tamm state and surface plasmons. These designs are applicable to the design of single photon sources, nanoLEDs, and nanolasers for communications. △ Less

Submitted 16 February, 2024; originally announced February 2024.

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Authors: Shivali Agrawal, Len van Deurzen, Jimy Encomendero, Joseph E. Dill, Hsin Wei, Huang, Vladimir Protasenko, Huili, Xing, Debdeep Jena

Abstract: Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable… ▽ More Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{\text{bi}}\approx5.5$ V, a minimum room temperature ideality factor of $η\approx 1.63$, and more than 12 orders of current modulation at room temperature. Stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300$^\circ$C. The one-sided n$^{+}$-p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance-voltage profile. The measured average mobile hole density is $p \sim 5.7 \times 10^{17}$ cm$^{-3}$, in close agreement with what is theoretically expected from distributed polarization do**. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n$^{+}$ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization do** enables ultrawide bandgap semiconductor heterojunction p-n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments. △ Less

Submitted 13 December, 2023; originally announced December 2023.

Epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN distributed Bragg reflectors

Authors: Len van Deurzen, Thai-Son Nguyen, Joseph Casamento, Huili Grace Xing, Debdeep Jena

Abstract: We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a rapid increase of in-plane lattice coefficient as scandium is incorporated into AlScN, we measure a lattice-matched condition to $c$-plane GaN for a Sc content… ▽ More We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a rapid increase of in-plane lattice coefficient as scandium is incorporated into AlScN, we measure a lattice-matched condition to $c$-plane GaN for a Sc content of just 11\%, resulting in a large refractive index mismatch $\mathrm{Δn}$ greater than 0.3 corresponding to an index contrast of $\mathrm{Δn/n_{GaN}}$ = 0.12 with GaN. The DBRs demonstrated here are designed for a peak reflectivity at a wavelength of 400 nm reaching a reflectivity of 0.98 for twenty periods. It is highlighted that AlScN/GaN multilayers require fewer periods for a desired reflectivity than other lattice-matched Bragg reflectors such as those based on AlInN/GaN multilayers. △ Less

Submitted 28 September, 2023; originally announced September 2023.

Effects of $p$-wave Interactions on Borromean Efimov Trimers in Heavy-Light Fermi Systems

Authors: Cai-Yun Zhao, Hui-Li Han, Ting-Yun Shi

Abstract: We investigate the effects of $p$-wave interactions on Efimov trimers in systems comprising two identical heavy fermions and a light particle, with mass ratios larger than $13.6$. Our focus lies on the borromean regime where the ground-state trimer exists in the absence of dimers. Using pair-wise Lennard-Jones potentials and concentrating on the $L^π = 1^{-}$ symmetry, we explore the critical valu… ▽ More We investigate the effects of $p$-wave interactions on Efimov trimers in systems comprising two identical heavy fermions and a light particle, with mass ratios larger than $13.6$. Our focus lies on the borromean regime where the ground-state trimer exists in the absence of dimers. Using pair-wise Lennard-Jones potentials and concentrating on the $L^π = 1^{-}$ symmetry, we explore the critical value of the interspecies $s$-wave scattering length $a_{c}$ at which the borromean state appears in several two-component particle systems. We study the universal properties of $a_{c}$ and the influence of $p$-wave fermion-fermion interactions on its value. Our findings show that, in the absence of $p$-wave fermion-fermion interactions, $a_{c}$ is universally determined by the van der Waals radius and mass ratio. However, when attractive interactions between the two fermions are introduced, the formation of the borromean state becomes favored over the absence of $p$-wave fermion-fermion interaction. Furthermore, we demonstrate that the $p$-wave Efimov effects persist even when the fermion-fermion interaction is taken to the $p$-wave unitary limit. △ Less

Submitted 24 July, 2023; originally announced July 2023.

Phase-field based lattice Boltzmann model for simulating thermocapillary flows

Authors: Lei Wanga, Kun Hea, Huili Wang

Abstract: This paper proposes a simple and accurate lattice Boltzmann model for simulating thermocapillary flows, which is able to deal with thermophysical parameters contrasts. In this model, two lattice Boltzmann equations are utilized to solve the conservative Allen-Cahn equation and the incompressible Navier-Stokes equations, while another lattice Boltzmann equation is used for solving the temperature f… ▽ More This paper proposes a simple and accurate lattice Boltzmann model for simulating thermocapillary flows, which is able to deal with thermophysical parameters contrasts. In this model, two lattice Boltzmann equations are utilized to solve the conservative Allen-Cahn equation and the incompressible Navier-Stokes equations, while another lattice Boltzmann equation is used for solving the temperature field, where the collision term is delicately designed such that the influence of the thermophysical parameters contrasts is incorporated. In contrast to previous lattice Boltzmann model for thermocapillary flows, the most distinct feature of the current model is that the forcing term used in the present thermal lattice Boltzmann equation is not needed to calculate space derivatives of the heat capacitance or the order parameter, making the scheme much simpler and also possible to retain the main merits of the lattice Boltzmann method. The developed model is firstly validated by considering the thermocapillary flows in a heated microchannel with two superimposed planar fluids. It is then used to simulate thermocapillary migration of a two-dimensional deformable droplet, and its accuracy is once again consistent with the theoretical prediction when the Marangoni number approaches zero. Finally, we numerically study the motion of two recalcitrant bubbles in a two-dimensional channel where the relationship between surface tension and temperature is assumed to be a parabolic function. It is found that owing to the competing between the inertia and thermal effects, the bubbles are able to move against the liquid's bulk motion and towards areas with low surface tension. △ Less

Submitted 20 June, 2023; originally announced June 2023.

Fighting Broken Symmetry with Do**: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Authors: Jimy Encomendero, Vladimir Protasenko, Farhan Rana, Debdeep Jena, Huili Grace Xing

Abstract: The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately d… ▽ More The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high do** density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform do**, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 9 pages, 4 figures

Journal ref: Physical Review Applied 13, 034048 (2020)

Universal Three-Body Physics for Ultracold $^{87}$Rb-$^{40}$K Mixtures with Finite-range Interactions

Authors: Ning-Ning Gao, Hui-Li Han, Ting-Yun Shi

Abstract: The breakdown of Efimov universal relations between resonances and interference features in ultracold $^{40}$K-$^{87}$Rb mixtures has sparked much discussion. In this study, we investigate the atom-dimer elastic scattering and three-body recombination (TBR) rates with $J=0$ symmetry for a $^{87}$Rb-$^{87}$Rb-$^{40}$K system to understand the mechanisms underlying this breakdown. We use the R-matri… ▽ More The breakdown of Efimov universal relations between resonances and interference features in ultracold $^{40}$K-$^{87}$Rb mixtures has sparked much discussion. In this study, we investigate the atom-dimer elastic scattering and three-body recombination (TBR) rates with $J=0$ symmetry for a $^{87}$Rb-$^{87}$Rb-$^{40}$K system to understand the mechanisms underlying this breakdown. We use the R-matrix propagation method in a hyperspherical coordinate frame with the Lennard-Jones model potential describing the interactions between atoms. We extract the atom-dimer scattering length, cross sections and three-body recombination rates with a finite intraspecies scattering length. An atom-dimer elastic scattering resonance at negative interspecies scattering length is found, which is due to the presence of the near-threshold trimer state at the atom-dimer threshold ($^{40}$K + $^{87}$Rb$^{87}$Rb). In addition, we predict an Efimov recombination minima at positive interspecies scattering length, which is outside the range of previous measurements. Our calculations show that the breakdown of the universal relations predicted by zero-range theory can be attributed to the effective range corrections and finite intraspecies scattering length. The present results help elucidate the universal relations between Efimov features as well as the importance of finite-range corrections for mixed systems. △ Less

Submitted 19 February, 2023; v1 submitted 16 February, 2023; originally announced February 2023.

Comments: 20 pages,10 figures

Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy

Authors: Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

Abstract: We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti… ▽ More We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon do** concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Comments: 19 pages, 7 figures, 2 tables, 2 pages supplementary materials

HZO-based FerroNEMS MAC for In-Memory Computing

Authors: Shubham Jadhav, Ved Gund, Benyamin Davaji, Debdeep Jena, Huili, Xing, Amit Lal

Abstract: This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $μ$m $\times$ 30 $μ$m unimorph cantilever with 20 nm thick ferroelectric HZO on 1 $μ$m $SiO_2$.Partial ferroelectric switching in HZO achieves analog programmable control of the… ▽ More This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computing. The reported device consists of a 250 $μ$m $\times$ 30 $μ$m unimorph cantilever with 20 nm thick ferroelectric HZO on 1 $μ$m $SiO_2$.Partial ferroelectric switching in HZO achieves analog programmable control of the piezoelectric coefficient ($d_{31}$) which serves as the computational weight for multiply-accumulate (MAC) operations. The displacement of the piezoelectric unimorph was recorded by actuating the device with different input voltages $V_{in}$. The resulting displacement was measured as a function of the ferroelectric programming/poling voltage $V_p$. The slopes of central beam displacement ($δ_{max}$) vs $V_{in}$ were measured to be between 182.9nm/V (for -8 $V_p$) and -90.5nm/V (for 8 $V_p$), demonstrating that $V_p$ can be used to change the direction of motion of the beam. The resultant ($δ_{max}$) from AC actuation is in the range of -18 to 36 nm and is a scaled product of the input voltage and programmed $d_{31}$ (governed by the $V_p$). The multiplication function serves as the fundamental unit for MAC operations with the ferroelectric NEMS unimorph. The displacement from many such beams can be added by summing the capacitance changes, providing a pathway to implement a multi-input and multi-weight neuron. A scaling and fabrication analysis suggests that this device can be CMOS compatible, achieving high in-memory computational throughput. △ Less

Submitted 12 August, 2022; originally announced August 2022.

N-polar GaN p-n junction diodes with low ideality factors

Authors: Kazuki Nomoto, Huili Grace Xing, Debdeep Jena, Yong** Cho

Abstract: High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an ideality factor of 1.6. As the temperature increases to 200 C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley-… ▽ More High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an ideality factor of 1.6. As the temperature increases to 200 C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley-Read-Hall recombination times of 0.32-0.46 ns are estimated. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level and acceptor-related luminescence is greatly suppressed. A relatively high reverse breakdown field of 2.4 MV/cm without field-plates is achieved. This work indicates that the quality of N-polar GaN diodes is now approaching to that of their state-of-the-art Ga-polar counterparts. △ Less

Submitted 4 May, 2022; v1 submitted 24 April, 2022; originally announced April 2022.

Comments: 11 pages, 3 figures

Journal ref: Applied Physics Express 15, 064004 (2022)

Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

Authors: Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai, Vladimir Protasenko, Jashan Singhal, Hideto Miyake, Huili Grace Xing, Debdeep Jena, Yong** Cho

Abstract: N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates. Direct growth without any in-situ surface cleaning leads to films with inverted Al-polarity. It is found that Al-assisted cleaning before growth enabl… ▽ More N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates. Direct growth without any in-situ surface cleaning leads to films with inverted Al-polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity. The grown N-polar AlN epilayer with its smooth, pit-free surface duplicates the structural quality of the substrate as evidenced by a clean and smooth growth interface with no noticeable extended defects generation. Near band-edge photoluminescence peaks are observed at room temperature on samples with MBE-grown layers but not on the bare AlN substrates, implying the suppression of non-radiative recombination centers in the epitaxial N-polar AlN. These results are pivotal steps towards future high-power RF electronics and deep ultraviolet photonics based on the N-polar AlN platform. △ Less

Submitted 18 April, 2022; originally announced April 2022.

Hyperspherical approach to atom--dimer collision with the Jacobi boundary condition

Authors: Cai-Yun Zhao, Yi Zhang, Hui-Li Han, Ting-Yun Shi

Abstract: In this study, we investigate atom--dimer scattering within the framework of the hyperspherical method. The coupled channel Schrödinger equation is solved using the R-matrix propagation technique combined with the smooth variable discretization method. In the matching procedure, the asymptotic wave functions are expressed in the rotated Jacobi coordinates. We apply this approach to the elastic sca… ▽ More In this study, we investigate atom--dimer scattering within the framework of the hyperspherical method. The coupled channel Schrödinger equation is solved using the R-matrix propagation technique combined with the smooth variable discretization method. In the matching procedure, the asymptotic wave functions are expressed in the rotated Jacobi coordinates. We apply this approach to the elastic scattering $^{3}$He(T$\uparrow$) + $^{4}$He$_{2}$ and H$\uparrow$ + H$\uparrow$Li processes. The convergence of the scattering length as a function of the propagation distance is studied. We find that the method is reliable and can provide considerable savings over previous propagators. △ Less

Submitted 25 September, 2022; v1 submitted 17 February, 2022; originally announced February 2022.

Experimental unsupervised learning of non-Hermitian knotted phases with solid-state spins

Authors: Yefei Yu, Li-Wei Yu, Wengang Zhang, Huili Zhang, Xiaolong Ouyang, Yanqing Liu, Dong-Ling Deng, L. -M. Duan

Abstract: Non-Hermiticity has widespread applications in quantum physics. It brings about distinct topological phases without Hermitian counterparts, and gives rise to the fundamental challenge of phase classification from both theoretical and experimental aspects. Here we report the first experimental demonstration of unsupervised learning of non-Hermitian topological phases with the nitrogen-vacancy cente… ▽ More Non-Hermiticity has widespread applications in quantum physics. It brings about distinct topological phases without Hermitian counterparts, and gives rise to the fundamental challenge of phase classification from both theoretical and experimental aspects. Here we report the first experimental demonstration of unsupervised learning of non-Hermitian topological phases with the nitrogen-vacancy center platform. In particular, we implement the non-Hermitian twister model, which hosts peculiar knotted topological phases, with a solid-state quantum simulator consisting of an electron spin and a nearby $^{13}$C nuclear spin in a nitrogen-vacancy center in diamond. By tuning the microwave pulses, we efficiently generate a set of experimental data without phase labels. Furthermore, based on the diffusion map method, we cluster this set of experimental raw data into three different knotted phases in an unsupervised fashion without a priori knowledge of the system, which is in sharp contrast to the previously implemented supervised learning phases of matter. Our results showcase the intriguing potential for autonomous classification of exotic unknown topological phases with experimental raw data. △ Less

Submitted 27 December, 2021; originally announced December 2021.

Comments: 7+20 pages

Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric

Authors: Joseph Casamento, Hyunjea Lee, Takuya Maeda, Ved Gund, Kazuki Nomoto, Len van Deurzen, Amit Lal, Huili, Xing, Debdeep Jena

Abstract: Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($ε_r$) values relative to AlN. $ε_r$ values of ~17 to 21 for Sc contents of 17 to 25% (x=0.17 to 0.25) measured electrically by capacitance-voltage (CV) measurements at 500 kHz frequency indicate Sc$_x$Al$_{1-x}$N has the largest relative dielectric… ▽ More Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($ε_r$) values relative to AlN. $ε_r$ values of ~17 to 21 for Sc contents of 17 to 25% (x=0.17 to 0.25) measured electrically by capacitance-voltage (CV) measurements at 500 kHz frequency indicate Sc$_x$Al$_{1-x}$N has the largest relative dielectric permittivity of any existing nitride material. This points toward the usage of Sc$_x$Al$_{1-x}$N as potential epitaxial, single-crystalline dielectric material that can be deposited in situ on GaN and AlN electronic and photonic devices for enhanced performance. △ Less

Submitted 27 October, 2021; originally announced October 2021.

Optically Pumped AlGaN Double Heterostructure Deep-UV Laser by Molecular Beam Homoepitaxy: Mirror Imperfections and Cavity Loss

Authors: Len van Deurzen, Ryan Page, Vladimir Protasenko, Huili, Xing, Debdeep Jena

Abstract: We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit multi-mode emission with peak gain at ~284 nm. Having the goal of electrically injected, continuous wave deep-UV AlGaN laser diodes in mind, with its intrinsic m… ▽ More We demonstrate the first optically pumped sub-300 nm UV laser structures grown by plasma-assisted molecular beam epitaxy on single-crystal bulk AlN. The edge-emitting laser structures fabricated with the AlN/AlGaN heterostructures exhibit multi-mode emission with peak gain at ~284 nm. Having the goal of electrically injected, continuous wave deep-UV AlGaN laser diodes in mind, with its intrinsic material challenges of achieving sufficient optical gain, the optical cavity loss of a laser diode should be minimized. We derive an expression to quantify the effect of mirror imperfections, including slant and surface roughness on the optical mirror loss of a Fabry-Pérot cavity. It is found that the optical imperfection loss is a superlinear function of the RMS roughness and slant angle of the facets, and also scales as the inverse wavelength squared of the principal lasing mode. This highlights the importance of device processing optimization as Fabry-Pérot cavities couple to lower wavelengths. △ Less

Submitted 22 September, 2021; originally announced September 2021.

Comments: 6 pages, 3 figures, letter

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers

Authors: Reet Chaudhuri, Zhen Chen, David Muller, Huili Grace Xing, Debdeep Jena

Abstract: High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an important step towards high-speed and high-power complementary electronics with wide-bandgap semiconductors. These technologically and scientifically relevant 2D ho… ▽ More High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an important step towards high-speed and high-power complementary electronics with wide-bandgap semiconductors. These technologically and scientifically relevant 2D hole gases are perceived to be not as robust as the 2DEGs because structurally similar heterostructures exhibit wide variations of the hole density over $Δp_s >$ 7 x 10$^{13}$ cm$^{-2}$, and low mobilities. In this work, we uncover that the variations are tied to undesired dopant impurities such as Silicon and Oxygen floating up from the nucleation interface. By introducing impurity blocking layers (IBLs) in the AlN buffer layer, we eliminate the variability in 2D hole gas densities and transport properties, resulting in a much tighter-control over the 2DHG density variations to $Δp_s \leq$ 1 x 10$^{13}$ cm$^{-2}$ across growths, and a 3x boost in the Hall mobilities. These changes result in a 2-3x increase in hole conductivity when compared to GaN/AlN structures without IBLs. △ Less

Submitted 30 June, 2021; originally announced June 2021.

Comments: The following article has been accepted by Journal of Applied Physics. After it is published, it will be found at [https://aip.scitation.org/journal/jap]

Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs

Authors: Len van Deurzen, Mikel Gómez Ruiz, Kevin Lee, Henryk Turski, Shyam Bharadwaj, Ryan Page, Vladimir Protasenko, Huili, Xing, Jonas Lähnemann, Debdeep Jena

Abstract: This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities a… ▽ More This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N$_{2}$ formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots due to leakage current and nonradiative recombination. △ Less

Submitted 20 June, 2021; originally announced June 2021.

Comments: 11 pages, 8 figures

Journal ref: J. Phys. D: Appl. Phys. 54, 495106 (2021)

Ferroelectricity in Polar ScAlN/GaN Epitaxial Semiconductor Heterostructures

Authors: Joseph Casamento, Ved Gund, Hyunjea Lee, Kazuki Nomoto, Takuya Maeda, Benyamin Davaji, Mohammad Javad Asadi, John Wright, Yu-Tsun Shao, David A. Muller, Amit Lal, Huili, Xing, Debdeep Jena

Abstract: Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement c… ▽ More Room temperature ferroelectricity is observed in lattice-matched ~18% ScAlN/GaN heterostructures grown by molecular beam epitaxy on single-crystal GaN substrates. The epitaxial films have smooth surface morphologies and high crystallinity. Pulsed current-voltage measurements confirm stable and repeatable polarization switching in such ferroelectric/semiconductor structures at several measurement conditions, and in multiple samples. The measured coercive field values are Ec~0.7 MV/cm at room temperature, with remnant polarization Pr~10 μC/cm2 for ~100 nm thick ScAlN layers. These values are substantially lower than comparable ScAlN control layers deposited by sputtering. Importantly, the coercive field of MBE ScAlN is smaller than the critical breakdown field of GaN, offering the potential for low voltage ferroelectric switching. The low coercive field ferroelectricity of ScAlN on GaN heralds the possibility of new forms of electronic and photonic devices with epitaxially integrated ferroelectric/semiconductor heterostructures that take advantage of the GaN electronic and photonic semiconductor platform, where the underlying semiconductors themselves exhibit spontaneous and piezoelectric polarization. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Three-body recombination near the d-wave resonance in ultracold $^{85}$Rb\,-$^{87}$Rb mixtures

Authors: Cai-Yun Zhao, Hui-Li Han, Ting-Yung Shi

Abstract: We have studied the three-body recombination rates on both sides of the interspecies d-wave Feshbach resonance in the $^{85}$Rb\,-$^{87}$Rb-$^{87}$Rb system using the $R$-matrix propagation method in the hyperspherical coordinate frame. Two different mechanisms of recombination rate enhancement for positive and negative $^{85}$Rb\,-$^{87}$Rb d-wave scattering lengths are analyzed. On the positive… ▽ More We have studied the three-body recombination rates on both sides of the interspecies d-wave Feshbach resonance in the $^{85}$Rb\,-$^{87}$Rb-$^{87}$Rb system using the $R$-matrix propagation method in the hyperspherical coordinate frame. Two different mechanisms of recombination rate enhancement for positive and negative $^{85}$Rb\,-$^{87}$Rb d-wave scattering lengths are analyzed. On the positive scattering length side, the recombination rate enhancement occurs due to the existence of three-body shape resonance, while on the negative scattering length side, the coupling between the lowest entrance channel and the highest recombination channel is crucial to the appearance of the enhancement. In addition, our study shows that the intraspecies interaction plays a significant role in determining the emergence of recombination rate enhancements. Compared to the case in which the three pairwise interactions are all in d-wave resonance, when the $^{87}$Rb-$^{87}$Rb interaction is near the d-wave resonance, the values of the interspecies scattering length that produce the recombination enhancement shift. In particular, when the $^{87}$Rb-$^{87}$Rb interaction is away from the d-wave resonance, the enhancement disappears on the negative interspecies scattering length side. △ Less

Submitted 30 July, 2021; v1 submitted 24 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. A 104, 013317 (2021)

$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films

Authors: Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller

Abstract: $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3$ films grown by molecular beam epitaxy. For undoped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films we observe $γ$-phase inclusions between nucleating islands of the $β$-phase at lower growth temperatures (~400-600 $^{\circ}$C). In doped $β$-Ga$_2$O$_3$, a thin layer of the $γ$-phase is observed on the surfaces of films grown with a wide range of n-type dopants and dopant concentrations. The thickness of the $γ$-phase layer was most strongly correlated with the growth temperature, peaking at about 600 $^{\circ}$C. Ga interstitials are observed in $β$-phase, especially near the interface with the $γ$-phase. By imaging the same region of the surface of a Sn-doped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ after ex-situ heating up to 400 $^{\circ}$C, a $γ$-phase region is observed to grow above the initial surface, accompanied by a decrease in Ga interstitials in the $β$-phase. This suggests that the diffusion of Ga interstitials towards the surface is likely the mechanism for growth of the surface $γ$-phase, and more generally that the more-open $γ$-phase may offer diffusion pathways to be a kinetically-favored and early-forming phase in the growth of Ga$_2$O$_3$. △ Less

Submitted 30 November, 2020; originally announced December 2020.

Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current in $β$-Ga$_{2}$O$_{3}$

Authors: Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing

Abstract: The reverse leakage current through a Schottky barrier transitions from a thermionic-emission dominated regime to a barrier-tunneling dominated regime as the surface electric field increases. In this study, we evaluate such transition electric field ($E_{\rm T}$) in $β$-Ga$_{2}$O$_{3}$ using a numerical reverse leakage model. $E_{\rm T}$ is found to have very weak dependence on the do** concentr… ▽ More The reverse leakage current through a Schottky barrier transitions from a thermionic-emission dominated regime to a barrier-tunneling dominated regime as the surface electric field increases. In this study, we evaluate such transition electric field ($E_{\rm T}$) in $β$-Ga$_{2}$O$_{3}$ using a numerical reverse leakage model. $E_{\rm T}$ is found to have very weak dependence on the do** concentration and barrier height, thus a near-universal temperature dependence suffices and is given by a simple empirical expression in Ga$_{2}$O$_{3}$. With the help of a field-plate design, we observed experimentally in Ga$_{2}$O$_{3}$ Schottky barrier diodes a near-ideal bulk reverse leakage characteristics, which matches well with our numerical model and confirms the presence of the transition region. Near the transition electric field, both thermionic emission and barrier tunneling should be considered. The study provides important guidance toward accurate design and modeling of ideal reverse leakage characteristics in $β$-Ga$_{2}$O$_{3}$ Schottky barrier diodes. △ Less

Submitted 17 August, 2020; originally announced August 2020.

Comments: 5 pages, 7 figures

Journal ref: Appl. Phys. Lett. 117, 222104 (2020)

Epitaxial Growth of $β$-Ga$_2$O$_3$ Coated Wide Bandgap Semiconductor Tape for Flexible UV Photodetector

Authors: Xiao Tang, Kuang-Hui Li, Yue Zhao, Yanxin Sui, Huili Liang, Zeng Liu, Che-Hao Liao, Zengxia Mei, Weihua Tang, Xiaohang Li

Abstract: The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. Th… ▽ More The epitaxial growth of technically-important $β$-Ga$_2$O$_3$ semiconductor thin films have not been realized on flexible substrates due to limitations by the high-temperature crystallization conditions and the lattice-matching requirements. In this report, for the first time single crystal $β$-Ga$_2$O$_3$(-201) thin films is epitaxially grown on the flexible CeO2 (001)-buffered hastelloy tape. The results indicate that CeO$_2$ (001) has a small bi-axial lattice mismatch with $β$-Ga$_2$O$_3$ (-201), thus inducing a simultaneous double-domain epitaxial growth. Flexible photodetectors are fabricated based on the epitaxial $β$-Ga$_2$O$_3$ coated tapes. Measurements show that the obtained photodetectors have a responsivity of 40 mA/W, with an on/off ratio reaching 1000 under 250 nm incident light and 5 V bias voltage. Such photoelectrical performance is already within the mainstream level of the $β$-Ga$_2$O$_3$ based photodetectors by using the conventional rigid single crystal substrates; and more importantly remained robust against more than 1000 cycles of bending tests. In addition, the epitaxy technique described in the report also paves the way for the fabrication of a wide range of flexible epitaxial film devices that utilize the materials with lattice parameters similar to $β$-Ga$_2$O$_3$, including GaN, AlN and SiC. △ Less

Submitted 1 August, 2020; originally announced August 2020.

Comments: 25 pages, 10 figures

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Authors: Riena **no, Celesta S. Chang, Takeyoshi Onuma, Yong** Cho, Shao-Ting Ho, Michael C. Cao, Kevin Lee, Vladimir Protasenko, Darrell G. Schlom, David A. Muller, Huili G. Xing, Debdeep Jena

Abstract: Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi… ▽ More Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date. △ Less

Submitted 16 July, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 22 pages, 8 figures

Intra- and Inter-Conduction Band Optical Absorption Processes in $β$-Ga$_2$O$_3$

Authors: Arjan Singh, Okan Koksal, Nicholas Tanen, Jonathan McCandless, Debdeep Jena, Huili, Xing, Hartwin Peelaers, Farhan Rana

Abstract: $β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ is an ultra-wide bandgap semiconductor and is thus expected to be optically transparent to light of sub-bandgap wavelengths well into the ultraviolet. Contrary to this expectation, it is found here that free electrons in n-doped $β$-Ga$_2$O$_3$ absorb light from the IR to the UV wavelength range via intra- and inter-conduction band optical transitions. Intra-conduction band absorption occurs via an indirect optical phonon mediated process with a $1/ω^{3}$ dependence in the visible to near-IR wavelength range. This frequency dependence markedly differs from the $1/ω^{2}$ dependence predicted by the Drude model of free-carrier absorption. The inter-conduction band absorption between the lowest conduction band and a higher conduction band occurs via a direct optical process at $λ\sim 349$ nm (3.55 eV). Steady state and ultrafast optical spectroscopy measurements unambiguously identify both these absorption processes and enable quantitative measurements of the inter-conduction band energy, and the frequency dependence of absorption. Whereas the intra-conduction band absorption does not depend on light polarization, inter-conduction band absorption is found to be strongly polarization dependent. The experimental observations, in excellent agreement with recent theoretical predictions for $β$-Ga$_2$O$_3$, provide important limits of sub-bandgap transparency for optoelectronics in the deep-UV to visible wavelength range, and are also of importance for high electric field transport effects in this emerging semiconductor. △ Less

Submitted 29 July, 2020; v1 submitted 26 June, 2020; originally announced June 2020.

Comments: 5 pages, 6 figures

Epitaxial niobium nitride superconducting nanowire single-photon detectors

Authors: Risheng Cheng, John Wright, Huili G. Xing, Debdeep Jena, Hong X. Tang

Abstract: Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the use of single-crystalline NbN thin films for superconducting nanowire single-photon detectors (SNSPDs). Grown by molecular beam epitaxy (MBE) at high temperature on nearly lattice-matched AlN-on-sapphire substrates, the NbN films exhibit high degree of uniformity… ▽ More Superconducting nanowires used in single-photon detectors have been realized on amorphous or poly-crystalline films. Here, we report the use of single-crystalline NbN thin films for superconducting nanowire single-photon detectors (SNSPDs). Grown by molecular beam epitaxy (MBE) at high temperature on nearly lattice-matched AlN-on-sapphire substrates, the NbN films exhibit high degree of uniformity and homogeneity. Even with relatively thick films, the fabricated nanowire detectors show saturated internal efficiency at near-IR wavelengths, demonstrating the potential of MBE-grown NbN for realizing large arrays of on-chip SNSPDs and their integration with AlN-based $χ^{(2)}$ quantum photonic circuits. △ Less

Submitted 17 June, 2020; originally announced June 2020.

Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques

Authors: Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena

Abstract: Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SO… ▽ More Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to a SOTFET heterostructure. △ Less

Submitted 25 December, 2019; originally announced December 2019.

A finite-difference lattice Boltzmann model with second-order accuracy of time and space for incompressible flow

Authors: Xinmeng Chen, Zhenhua Chai, Huili Wang, Baochang Shi

Abstract: In this paper, a kind of finite-difference lattice Boltzmann method with the second-order accuracy of time and space (T2S2-FDLBM) is proposed. In this method, a new simplified two-stage fourth order time-accurate discretization approach is applied to construct time marching scheme, and the spatial gradient operator is discretized by a mixed difference scheme to maintain a second-order accuracy bot… ▽ More In this paper, a kind of finite-difference lattice Boltzmann method with the second-order accuracy of time and space (T2S2-FDLBM) is proposed. In this method, a new simplified two-stage fourth order time-accurate discretization approach is applied to construct time marching scheme, and the spatial gradient operator is discretized by a mixed difference scheme to maintain a second-order accuracy both in time and space. It is shown that the previous finite-difference lattice Boltzmann method (FDLBM) proposed by Guo [1] is a special case of the T2S2-FDLBM. Through the von Neumann analysis, the stability of the method is analyzed and two specific T2S2-FDLBMs are discussed. The two T2S2-FDLBMs are applied to simulate some incompressible flows with the non-uniform grids. Compared with the previous FDLBM and SLBM, the T2S2-FDLBM is more accurate and more stable. The value of the Courant-Friedrichs-Lewy condition number in our method can be up to 0.9, which also significantly improves the computational efficiency. △ Less

Submitted 28 November, 2019; originally announced November 2019.

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers

Authors: Shyam Bharadwaj, Jeffrey Miller, Kevin Lee, Joshua Lederman, Marcin Siekacz, Huili Xing, Debdeep Jena, Czesław Skierbiszewski, Henryk Turski

Abstract: Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga… ▽ More Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga$_{0.83}$N/GaN TJs and UID GaN spacers to separate the optical mode from the heavily doped absorbing p-cladding regions. In such laser structures, polarization offsets at the electron blocking layer, spacer, and quantum barrier interfaces play discernable roles in carrier transport. By comparing a top-TJ structure to a bottom-TJ structure, and correlating features in the electroluminescence, capacitance-voltage, and current-voltage characteristics to unique signatures of the N- and Ga-polar polarization heterointerfaces in energy band diagram simulations, we identify that improved hole injection at low currents, and improved electron blocking at high currents, leads to higher injection efficiency and higher output power for the bottom-TJ device throughout 5 orders of current density (0.015 - 1000 A/cm$^2$). Moreover, even with the addition of a UID GaN spacer, differential resistances are state-of-the-art, below 7x10-4 $Ω$cm$^2$. These results highlight the virtues of the bottom-TJ geometry for use in high-efficiency laser diodes. △ Less

Submitted 8 November, 2019; originally announced November 2019.

Comments: 6 figures, 1 table, 18 pages

Switching the Optical Chirality in Magneto-plasmonic Metasurfaces Using Applied Magnetic Fields

Authors: Jun Qin, Longjiang Deng, Tongtong Kang, Lixia Nie, Huayu Feng, Huili Wang, Run Yang, Xiao Liang, Tingting Tang, Chaoyang Li, Hanbin Wang, Yi Luo, Gaspar Armelles, Lei Bi

Abstract: Chiral nanophotonic devices are promising candidates for chiral molecules sensing, polarization diverse nanophotonics and display technologies. Active chiral nanophotonic devices, where the optical chirality can be controlled by an external stimulus has triggered great research interest. However, efficient modulation of the optical chirality has been challenging. Here, we demonstrate switching of… ▽ More Chiral nanophotonic devices are promising candidates for chiral molecules sensing, polarization diverse nanophotonics and display technologies. Active chiral nanophotonic devices, where the optical chirality can be controlled by an external stimulus has triggered great research interest. However, efficient modulation of the optical chirality has been challenging. Here, we demonstrate switching of the extrinsic chirality by applied magnetic fields in a magneto-plasmonic metasurface device based on a magneto-optical oxide material, Ce1Y2Fe5O12 (Ce:YIG). Thanks to the low optical loss and strong magneto-optical effect of Ce:YIG, we experimentally demonstrated a giant and continuous far-field circular dichroism (CD) modulation by applied magnetic fields from -0.65° to +1.9° at 950 nm wavelength under glancing incident conditions. The far field CD modulation is due to both magneto-optical circular dichroism and near-field modulation of the superchiral fields by applied magnetic fields. Finally, we demonstrate magnetic field tunable chiral imaging in millimeter-scale magneto-plasmonic metasurfaces fabricated using self-assembly. Our results provide a new way for achieving planar integrated, large-scale and active chiral metasurfaces for polarization diverse nanophotonics. △ Less

Submitted 30 September, 2019; originally announced September 2019.

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Authors: Xiang Li, Phillip Dang, Joseph Casamento, Zexuan Zhang, Olalekan Afuye, Antonio B. Mei, Alyssa B. Apsel, Darrell G. Schlom, Debdeep Jena, Daniel C. Ralph, Huili Grace Xing

Abstract: Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge c… ▽ More Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high durability. The recent availability of multiferroic materials provides an opportunity to directly couple the change in spin states of a magnetic memory to a charge change in a semiconductor transistor. In this work, we propose and analyze the spin-orbit torque field-effect transistor (SOTFET), a device with the potential to significantly boost the energy efficiency of spin-based memories, and to simultaneously offer a palette of new functionalities. △ Less

Submitted 31 March, 2020; v1 submitted 17 September, 2019; originally announced September 2019.

Discrete unified gas kinetic scheme for nonlinear convection-diffusion equations

Authors: **long Shang, Zhenhua Chai, Huili Wang, Baochang Shi

Abstract: In this paper, we develop a discrete unified gas kinetic scheme (DUGKS) for general nonlinear convection-diffusion equation (NCDE), and show that the NCDE can be recovered correctly from the present model through the Chapman-Enskog analysis. We then test the present DUGKS through some classic convection-diffusion equations, and find that the numerical results are in good agreement with analytical… ▽ More In this paper, we develop a discrete unified gas kinetic scheme (DUGKS) for general nonlinear convection-diffusion equation (NCDE), and show that the NCDE can be recovered correctly from the present model through the Chapman-Enskog analysis. We then test the present DUGKS through some classic convection-diffusion equations, and find that the numerical results are in good agreement with analytical solutions and the DUGKS model has a second-order convergence rate. Finally, as a finite-volume method, DUGKS can also adopt the non-uniform mesh. Besides, we performed some comparisons among the DUGKS, finite-volume lattice Boltzmann model (FV-LBM), single-relaxation-time lattice Boltzmann model (SLBM) and multiple-relaxation-time lattice Boltzmann model (MRT-LBM). The results show that the DUGKS model is more accurate than FV-LBM, more stable than SLBM, and almost has the same accuracy as the MRT-LBM. Besides, the using of non-uniform mesh may make DUGKS model more flexible. △ Less

Submitted 16 June, 2019; originally announced June 2019.

Journal ref: Phys. Rev. E 101, 023306 (2020)

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Authors: Zhe Cheng, Nicholas Tanen, Celesta Chang, **g**g Shi, Jonathan McCandless, David Muller, Debdeep Jena, Huili Grace Xing, Samuel Graham

Abstract: Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-… ▽ More Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-Ga2O3 will be the bottleneck for real-world applications, especially for high power and high frequency devices. Similar to GaN/AlGaN interfaces, beta-(AlxGa1-x)2O3/Ga2O3 heterogeneous structures have been used to form a high mobility two-dimensional electron gas (2DEG) where joule heating is localized. The thermal properties of beta-(AlxGa1-x)2O3/Ga2O3 are the key for heat dissipation in these devices while they have not been studied before. This work reports the first measurement on thermal conductivity of beta-(Al0.1Ga0.9)2O3/Ga2O3 superlattices from 80 K to 480 K. Its thermal conductivity is significantly reduced (5.7 times reduction) at room temperature comparing with that of bulk Ga2O3. Additionally, the thermal conductivity of bulk Ga2O3 with (010) orientation is measured and found to be consistent with literature values regardless of Sn do**. We discuss the phonon scattering mechanism in these structures by calculating their inverse thermal diffusivity. By comparing the estimated thermal boundary conductance (TBC) of beta-(Al0.1Ga0.9)2O3/Ga2O3 interfaces and Ga2O3 maximum TBC, we reveal that some phonons in the superlattices transmit through several interfaces before scattering with other phonons or structural imperfections. This study is not only important for Ga2O3 electronics applications especially for high power and high frequency applications, but also for the fundamental thermal science of phonon transport across interfaces and in superlattices. △ Less

Submitted 30 April, 2019; originally announced May 2019.

Journal ref: Applied Physics Letter 115, 092105 (2019)

Universal Three-Body Parameter of Heavy-Heavy-Light systems with negative intraspecies scattering length

Authors: Caiyun Zhao, Huili Han, Mengshan Wu, Tingyun Shi

Abstract: The Three-Body Parameter(3BP) $a^{\scriptscriptstyle(1)}_{\scriptscriptstyle-}$ is crucial to understanding Efimov physics, and a universal 3BP has been shown in experiments and theory in ultracold homonuclear gases. The 3BP of heteronuclear systems was predicted to possess much richer properties than the homonuclear counterparts for the large parameter space. In this work, we investigate the univ… ▽ More The Three-Body Parameter(3BP) $a^{\scriptscriptstyle(1)}_{\scriptscriptstyle-}$ is crucial to understanding Efimov physics, and a universal 3BP has been shown in experiments and theory in ultracold homonuclear gases. The 3BP of heteronuclear systems was predicted to possess much richer properties than the homonuclear counterparts for the large parameter space. In this work, we investigate the universal properties of $a^{\scriptscriptstyle(1)}_{\scriptscriptstyle-}$ for the Heavy-Heavy-Light(HHL) system with negative intraspecies scattering length $a_{\scriptscriptstyle HH}$. We find that $a^{\scriptscriptstyle(1)}_{\scriptscriptstyle-}$ follows a universal behavior determined by the van der Waals(vdW) interaction and the mass ratio. An analytic formula of $a^{\scriptscriptstyle(1)}_{\scriptscriptstyle-}$ is given as a function of $a_{\scriptscriptstyle HH}$, which allows an intuitive understanding of how does $a^{\scriptscriptstyle(1)}_{\scriptscriptstyle-}$ depend on the mass ratio and the vdW length $r_{\scriptscriptstyle vdW}$. In a special case, when the two heavy atoms are in resonance, $a^{\scriptscriptstyle(1)}_{\scriptscriptstyle-}$ is approximately a constant: $a^{\scriptscriptstyle(1)}_{\scriptscriptstyle-} = -(6.3\pm0.6)\, r_{\scriptscriptstyle vdW,HL}$. △ Less

Submitted 10 November, 2019; v1 submitted 22 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. A 100, 052702 (2019)

A generalized lattice Boltzmann model for fluid flow system and its application in two-phase flows

Authors: Xiaolei Yuan, Zhenhua Chai, Huili Wang, Baochang Shi

Abstract: In this paper, a generalized lattice Boltzmann (LB) model with a mass source is proposed to solve both incompressible and nearly incompressible Navier-Stokes (N-S) equations. This model can be used to deal with single-phase and two-phase flows problems with a mass source term. From this generalized model, we can not only get some existing models, but also derive new models. Moreover, for the incom… ▽ More In this paper, a generalized lattice Boltzmann (LB) model with a mass source is proposed to solve both incompressible and nearly incompressible Navier-Stokes (N-S) equations. This model can be used to deal with single-phase and two-phase flows problems with a mass source term. From this generalized model, we can not only get some existing models, but also derive new models. Moreover, for the incompressible model derived, a modified pressure scheme is introduced to calculate the pressure, and then to ensure the accuracy of the model. In this work, we will focus on a two-phase flow system, and in the frame work of our generalized LB model, a new phase-field-based LB model is developed for incompressible and quasi-incompressible two-phase flows. A series of numerical simulations of some classic physical problems, including a spinodal decomposition, a static droplet, a layered Poiseuille flow, and a bubble rising flow under buoyancy, are performed to validate the developed model. Besides, some comparisons with previous quasi-incompressible and incompressible LB models are also carried out, and the results show that the present model is accurate in the study of two-phase flows. Finally, we also conduct a comparison between quasi-incompressible and incompressible LB models for two-phase flow problems, and find that in some cases, the proposed quasi-incompressible LB model performs better than incompressible LB models. △ Less

Submitted 24 February, 2019; originally announced February 2019.

Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy

Authors: Yong** Cho, Shyam Bharadwaj, Zongyang Hu, Kazuki Nomoto, Uwe Jahn, Huili Grace Xing, Debdeep Jena

Abstract: Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam epitaxy. The (In,Ga)N MQW active regions overgrown on the p+-GaN show chemically abrupt and sharp interfaces in a wide range of compositions and are seen to have hi… ▽ More Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam epitaxy. The (In,Ga)N MQW active regions overgrown on the p+-GaN show chemically abrupt and sharp interfaces in a wide range of compositions and are seen to have high structural and optical properties as verified by X-ray diffraction and spatially resolved cathodoluminescence measurements. The processed LEDs reveal clear rectifying behavior with a low contact and buried tunnel junction resistivity. By virtue of the top n+-GaN layer with a low resistance, excellent current spreading in the LEDs is observed at low currents in this device structure. A few of new device possibilities based on this unique design are discussed. △ Less

Submitted 18 December, 2018; originally announced December 2018.

Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions

Authors: Henryk Turski, Shyam Bharadwaj, Huili, Xing, Debdeep Jena

Abstract: The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quantum well heterostructures point in a direction opposite to what is desired for efficient flow of electrons and holes. This state of affairs has persisted because of the desire to have p-type hole injectors on top of the… ▽ More The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quantum well heterostructures point in a direction opposite to what is desired for efficient flow of electrons and holes. This state of affairs has persisted because of the desire to have p-type hole injectors on top of the quantum well active region. Because of the internal polarization fields in nitride heterostructures, there exist four permutations of do** and polarization for the realization of such light emitters. Which permutation is the most desirable for efficient light emission? In this work, we answer this question by demonstrating a fundamentally new approach towards efficient light emission with bottom-tunnel junctions. The bottom-tunnel junction design aligns the polarization fields in a desired direction in the quantum well, while simultaneously eliminating the need for p-type contacts, and allowing efficient current spreading. By preventing electron overshoot past quantum wells, it disables carrier recombination in undesired regions of the quantized heterostructures, and opens up the possibility for new geometries of integrating and stacking multiple light emitters. Due to the inherent advantages, the bottom-tunnel junction light emitting diode enables a 200-300% increase in the light emission efficiency over alternate heterostructure designs. △ Less

Submitted 3 October, 2018; originally announced October 2018.

Comments: 23 pages, 9 figures

Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas

Authors: Samuel James Bader, Reet Chaudhuri, Kazuki Nomoto, Austin Hickman, Zhen Chen, Han Wui Then, David A. Muller, Huili Grace Xing, Debdeep Jena

Abstract: High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-… ▽ More High-performance p-channel transistors are crucial to implementing efficient complementary circuits in wide-bandgap electronics, but progress on such devices has lagged far behind their powerful electron-based counterparts due to the inherent challenges of manipulating holes in wide-gap semiconductors. Building on recent advances in materials growth, this work sets simultaneous records in both on-current (10 mA/mm) and on-off modulation (four orders) for the GaN/AlN wide-bandgap p-FET structure. A compact analytical pFET model is derived, and the results are benchmarked against the various alternatives in the literature, clarifying the heterostructure trade-offs to enable integrated wide-bandgap CMOS for next-generation compact high-power devices. △ Less

Submitted 18 October, 2018; v1 submitted 7 September, 2018; originally announced September 2018.

Dissociation of Liquid Water on Defective Rutile TiO2 (110) Surfaces Using Ab-Initio Molecular Dynamics Simulations

Authors: Huili Wang, Zhenpeng Hu, Hui Li

Abstract: In order to obtain a comprehensive understanding of both thermodynamics and kinetics of water dissociation on TiO2, the reactions between liquid water and perfect and defective rutile TiO2 (110) surfaces were investigated using ab initio molecular dynamics simulations. The results showed that the free-energy barrier (~ 4.4 kcal/mol) is too high for a spontaneous dissociation of water on the perfec… ▽ More In order to obtain a comprehensive understanding of both thermodynamics and kinetics of water dissociation on TiO2, the reactions between liquid water and perfect and defective rutile TiO2 (110) surfaces were investigated using ab initio molecular dynamics simulations. The results showed that the free-energy barrier (~ 4.4 kcal/mol) is too high for a spontaneous dissociation of water on the perfect rutile (110) surface at a low temperature. The most stable oxygen vacancy (Vo1) on the rutile (110) surface cannot promote the dissociation of water, while other unstable oxygen vacancies can significantly enhance the water dissociation rate. This is opposite to the general understanding that Vo1 defects are active sites for water dissociation. Furthermore, we reveal that water dissociation is an exothermic reaction, which demonstrates that the dissociated state of the adsorbed water is thermodynamically favorable for both perfect and defective rutile (110) surfaces. The dissociation adsorption of water can also increase the hydrophilicity of TiO2. △ Less

Submitted 28 March, 2018; originally announced March 2018.

Observability of the Efimov spectrum in an electron-atom-atom system

Authors: Huili Han, Chris H. Greene

Abstract: The bound states of a system consisting of two heavy identical atoms and one light electron interacting through the finite-range pairwise potentials are explored, focusing on their dependence on the electron-atom scattering length. In the case of an exact resonance in the electron-atom interaction, the binding energy of an electron yields an effective $1/r^{2}$ potential for the relative motion of… ▽ More The bound states of a system consisting of two heavy identical atoms and one light electron interacting through the finite-range pairwise potentials are explored, focusing on their dependence on the electron-atom scattering length. In the case of an exact resonance in the electron-atom interaction, the binding energy of an electron yields an effective $1/r^{2}$ potential for the relative motion of the atoms; One major finding is a universal potential that depends on the polarization length which goes beyond the Efimov region. An analytic expression for that potential is extracted from numerical calculations. The spectrum of the e+Rb+Rb system produced by the electron-atom polarization interaction exhibits three main sections, a non-universal transition region, a quasi-Efimov region, and a densely packed Efimov region. △ Less

Submitted 14 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. A 98, 023632 (2018)

Phase-field-based lattice Boltzmann modeling of large-density-ratio two-phase flows

Authors: Hong Liang, Jiangrong Xu, Jiangxing Chen, Huili Wang, Zhenhua Chai, Baochang Shi

Abstract: In this paper, we present a simple and accurate lattice Boltzmann (LB) model for immiscible two-phase flows, which is able to deal with large density contrasts. This model utilizes two LB equations, one of which is used to solve the conservative Allen-Cahn equation, and the other is adopted to solve the incompressible Navier-Stokes equations. A novel forcing distribution function is elaborately de… ▽ More In this paper, we present a simple and accurate lattice Boltzmann (LB) model for immiscible two-phase flows, which is able to deal with large density contrasts. This model utilizes two LB equations, one of which is used to solve the conservative Allen-Cahn equation, and the other is adopted to solve the incompressible Navier-Stokes equations. A novel forcing distribution function is elaborately designed in the LB equation for the Navier-Stokes equations, which make it much simpler than the existing LB models. In addition, the proposed model can achieve superior numerical accuracy compared with previous Allen-Cahn type of LB models. Several benchmark two-phase problems, including static droplet, layered Poiseuille flow, and Spinodal decomposition are simulated to validate the present LB model. It is found that the present model can achieve relatively small spurious velocities in the LB community, and the obtained numerical results also show good agreement with the analytical solutions or some available results. At last, we use the present model to investigate the droplet impact on a thin liquid film with a large density ratio of 1000 and the Reynolds number ranging from 20 to 500. The fascinating phenomenon of droplet splashing is successfully reproduced by the present model and the numerically predicted spreading radius exhibits to obey the power law reported in the literature. △ Less

Submitted 26 October, 2017; originally announced October 2017.

Comments: 31 pages, 8 figures

Journal ref: Phys. Rev. E 98, 033301 (2018)

Flexible transparent high-voltage diodes for energy management in wearable electronics

Authors: Yonghui Zhang, Zengxia Mei, Tao Wang, Wenxing Huo, Shujuan Cui, Huili Liang, Xiaolong Du

Abstract: This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with their applications as building blocks of energy management systems in wearable electronics where triboelectric nanogenerators (TENGs) are used as power source. Both experimental results and technology computer aided des… ▽ More This work reports flexible fully transparent high-voltage diodes that feature high rectification ratio (Rr 10 8) and high breakdown voltage (Vb 150 V) simultaneously, combined with their applications as building blocks of energy management systems in wearable electronics where triboelectric nanogenerators (TENGs) are used as power source. Both experimental results and technology computer aided design (TCAD) simulations suggest that Rr and Vb can be modulated by the offset length in an opposite tendency. The low reverse leakage current (fA/MICRON) guarantees an ultra-low power consumption in standby mode, which is a core issue in wearable device applications. Besides the unprecedented electrical performance, the diodes exhibit good mechanical robustness with minimal degradation throughout the strain and fatigue tests. By incorporating these high-voltage diodes into half-wave and full-wave rectifier circuits, the high alternating current (AC) output voltage of TENGs is successfully rectified into direct current (DC) voltage and charged into supercapacitors (SCs), indicating their high integration and compatibility with TENGs, and thus their promising applications in various wearable electronic systems. △ Less

Submitted 20 September, 2017; originally announced September 2017.

Comments: 11pages, 8figures, just accepted by Nano Energy

Journal ref: Nano Energy 2017

Prevalent Intrinsic Emission from Nonaromatic Amino Acids and Poly(Amino Acids)

Authors: Xiaohong Chen, Weijian Luo, Huili Ma, Qian Peng, Wang Zhang Yuan, Yongming Zhang

Abstract: Nonaromatic amino acids are generally believed to be nonemissive, owing to their lack of apparently remarkable conjugation within individual molecules. Here we report the intrinsic visible emission of nonaromatic amino acids and poly(amino acids) in concentrated solutions and solid powders. This unique and widespread luminescent characteristic can be well rationalized by the clustering-triggered e… ▽ More Nonaromatic amino acids are generally believed to be nonemissive, owing to their lack of apparently remarkable conjugation within individual molecules. Here we report the intrinsic visible emission of nonaromatic amino acids and poly(amino acids) in concentrated solutions and solid powders. This unique and widespread luminescent characteristic can be well rationalized by the clustering-triggered emission (CTE) mechanism, namely the clustering of nonconventional chromophores (i.e. amino, carbonyl, and hydroxyl) and subsequent electron cloud overlap with simultaneously conformation rigidification. Such CTE mechanism is further supported by the single crystal structure analysis. Besides prompt fluorescence, room temperature phosphorescence (RTP) are also detected from the solids. Moreover, persistent RTP is observed in the powders of exampled poly(amino acid) of ε-poly-L-lysine (ε-PLL) after ceasing UV irradiation. These results not only illustrate the feasibility of employing the building blocks of nonaromatic amino acids in the exploration of new luminescent biomolecules, but also provide significant implications for the RTP of peptides and proteins at aggregated or crystalline states. △ Less

Submitted 12 June, 2017; originally announced June 2017.

Comments: 37 pages, 38 figures

A beam monitor using silicon pixel sensors for hadron therapy

Authors: Zhen Wang, Shuguang Zou, Yan Fan, Jun Liu, Xiangming Sun, Dong Wang, Huili Kang, Daming Sun, ** Yang, Hua Pei, Guangming Huang, Nu Xu, Chaosong Gao, Le Xiao

Abstract: We report the design and test results of a beam monitor developed for online monitoring in hadron therapy. The beam monitor uses eight silicon pixel sensors, \textit{Topmetal-${II}^-$}, as the anode array. \textit{Topmetal-${II}^-$} is a charge sensor designed in a CMOS 0.35 $μ$m technology. Each \textit{Topmetal-${II}^-$} sensor has $72\times72$ pixels and the pixel size is $83\times83$ $μ$m$^2$.… ▽ More We report the design and test results of a beam monitor developed for online monitoring in hadron therapy. The beam monitor uses eight silicon pixel sensors, \textit{Topmetal-${II}^-$}, as the anode array. \textit{Topmetal-${II}^-$} is a charge sensor designed in a CMOS 0.35 $μ$m technology. Each \textit{Topmetal-${II}^-$} sensor has $72\times72$ pixels and the pixel size is $83\times83$ $μ$m$^2$. In our design, the beam passes through the beam monitor without hitting the electrodes, making the beam monitor especially suitable for monitoring heavy ion beams. This design also reduces radiation damage to the beam monitor itself. The beam monitor is tested with a carbon ion beam at the Heavy Ion Research Facility in Lanzhou (HIRFL). Results indicate that the beam monitor can measure position, incidence angle and intensity of the beam with a position resolution better than 20 $μ$m, angular resolution about 0.5$^\circ$ and intensity statistical accuracy better than 2$\%$. △ Less

Submitted 19 January, 2017; v1 submitted 22 November, 2016; originally announced November 2016.

Journal ref: Nuclear Inst. and Methods in Physics Research, A 849C (2017) pp. 20-24

MBE-grown 232-270 nm Deep-UV LEDs using Monolayer thin Binary GaN/AlN quantum heterostructures

Authors: SM Islam, Kevin Lee, Jai Verma, Vladimir Protasenko, Sergei Rouvimov, Shyam Bharadwaj, Huili Xing, Debdeep Jena

Abstract: Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy (PAMBE). Single peaked emission spectra is achieved with narrow full width at half maximum (FWHM) for thre… ▽ More Electrically injected deep ultra-violet (UV) emission is obtained using monolayer (ML) thin GaN/AlN quantum structures as active regions. The emission wavelength is tuned by controlling the thickness of ultrathin GaN layers with monolayer precision using plasma assisted molecular beam epitaxy (PAMBE). Single peaked emission spectra is achieved with narrow full width at half maximum (FWHM) for three different light emitting diodes (LEDs) operating at 232 nm, 246 nm and 270 nm. 232 nm (5.34 eV) is the shortest EL emission wavelength reported so far using GaN as the light emitting material and employing polarization-induced do**. △ Less

Submitted 27 January, 2017; v1 submitted 16 October, 2016; originally announced October 2016.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 110, 041108 (2017)

Statistic inversion of multi-zone transition probability models for aquifer characterization in alluvial fans

Authors: Lin Zhu, Zhenxue Dai, Huili Gong, Carl Gable, Pietro Teatini

Abstract: Understanding the heterogeneity arising from the complex architecture of sedimentary sequences in alluvial fans is challenging. This paper develops a statistical inverse framework in a multi-zone transition probability approach for characterizing the heterogeneity in alluvial fans. An analytical solution of the transition probability matrix is used to define the statistical relationships among dif… ▽ More Understanding the heterogeneity arising from the complex architecture of sedimentary sequences in alluvial fans is challenging. This paper develops a statistical inverse framework in a multi-zone transition probability approach for characterizing the heterogeneity in alluvial fans. An analytical solution of the transition probability matrix is used to define the statistical relationships among different hydrofacies and their mean lengths, integral scales, and volumetric proportions. A statistical inversion is conducted to identify the multi-zone transition probability models and estimate the optimal statistical parameters using the modified Gauss-Newton-Levenberg-Marquardt method. The Jacobian matrix is computed by the sensitivity equation method, which results in an accurate inverse solution with quantification of parameter uncertainty. We use the Chaobai River alluvial fan in the Bei**g Plain, China, as an example for elucidating the methodology of alluvial fan characterization. The alluvial fan is divided into three sediment zones. In each zone, the explicit mathematical formulations of the transition probability models are constructed with optimized different integral scales and volumetric proportions. The hydrofacies distributions in the three zones are simulated sequentially by the multi-zone transition probability-based indicator simulations. The result of this study provides the heterogeneous structure of the alluvial fan for further study of flow and transport simulations. △ Less

Submitted 7 February, 2015; v1 submitted 22 January, 2015; originally announced January 2015.

Comments: 29 pages, 7 figures, and 3 tables

Report number: LA-UR-15-20404

Exploring the structure and function of temporal networks with dynamic graphlets

Authors: Yuriy Hulovatyy, Huili Chen, Tijana Milenkovic

Abstract: With the growing amount of available temporal real-world network data, an important question is how to efficiently study these data. One can simply model a temporal network as either a single aggregate static network, or as a series of time-specific snapshots, each of which is an aggregate static network over the corresponding time window. The advantage of modeling the temporal data in these two w… ▽ More With the growing amount of available temporal real-world network data, an important question is how to efficiently study these data. One can simply model a temporal network as either a single aggregate static network, or as a series of time-specific snapshots, each of which is an aggregate static network over the corresponding time window. The advantage of modeling the temporal data in these two ways is that one can use existing well established methods for static network analysis to study the resulting aggregate network(s). Here, we develop a novel approach for studying temporal network data more explicitly. We base our methodology on the well established notion of graphlets (subgraphs), which have been successfully used in numerous contexts in static network research. Here, we take the notion of static graphlets to the next level and develop new theory needed to allow for graphlet-based analysis of temporal networks. Our new notion of dynamic graphlets is quite different than existing approaches for dynamic network analysis that are based on temporal motifs (statistically significant subgraphs). Namely, these approaches suffer from many limitations. For example, they can only deal with subgraph structures of limited complexity. Also, their major drawback is that their results heavily depend on the choice of a null network model that is required to evaluate the significance of a subgraph. However, choosing an appropriate null network model is a non-trivial task. Our dynamic graphlet approach overcomes the limitations of the existing temporal motif-based approaches. At the same time, when we thoroughly evaluate the ability of our new approach to characterize the structure and function of an entire temporal network or of individual nodes, we find that the dynamic graphlet approach outperforms the static graphlet approach, which indicates that accounting for temporal information helps. △ Less

Submitted 11 December, 2014; originally announced December 2014.

An integrated assessment of the impact of precipitation and groundwater on vegetation growth in arid and semiarid areas

Authors: Lin Zhu, Huili Gong, Zhenxue Dai, Tingbao Xu, Xiaosi Su

Abstract: Increased demand for water resources together with the influence of climate change has degraded water conditions which support vegetation in many parts of the world, especially in arid and semiarid areas. This study develops an integrated framework to assess the impact of precipitation and groundwater on vegetation growth in the Xiliao River Plain of northern China. The integrated framework system… ▽ More Increased demand for water resources together with the influence of climate change has degraded water conditions which support vegetation in many parts of the world, especially in arid and semiarid areas. This study develops an integrated framework to assess the impact of precipitation and groundwater on vegetation growth in the Xiliao River Plain of northern China. The integrated framework systematically combines remote sensing technology with water flow modeling in the vadose zone and field data analysis. The vegetation growth is quantitatively evaluated with the remote sensing data by the Normalized Difference Vegetation Index (NDVI) and the simulated plant water uptake rates. The correlations among precipitation, groundwater depth and NDVI are investigated by using Pearson correlation equations. The results provide insights for understanding interactions between precipitation and groundwater and their contributions to vegetation growth. Strong correlations between groundwater depth, plant water uptake and NDVI are found in parts of the study area during a ten-year drought period. The numerical modeling results indicate that there is an increased correlation between the groundwater depth and vegetation growth and that groundwater significantly contributes to sustaining effective soil moisture for vegetation growth during the long drought period. Therefore, a decreasing groundwater table might pose a great threat to the survival of vegetation during a long drought period. △ Less

Submitted 10 December, 2014; originally announced December 2014.

Comments: 18 pages, 2 tables and 9 figures

Coded-aperture imaging using photo-induced reconfigurable aperture arrays for map** terahertz beams

Authors: Akash Kannegulla, Zhenguo Jiang, Syed Rahman, Patrick Fay, Huili Grace Xing, Li-**g Cheng, Lei Liu

Abstract: We report terahertz coded-aperture imaging using photo-induced reconfigurable aperture arrays on a silicon wafer. The coded aperture was implemented using programmable illumination from a commercially available digital light processing projector. At 590 GHz, each of the array element apertures can be optically turned on and off with a modulation depth of 20 dB and a modulation rate of ~1.3 KHz. Pr… ▽ More We report terahertz coded-aperture imaging using photo-induced reconfigurable aperture arrays on a silicon wafer. The coded aperture was implemented using programmable illumination from a commercially available digital light processing projector. At 590 GHz, each of the array element apertures can be optically turned on and off with a modulation depth of 20 dB and a modulation rate of ~1.3 KHz. Prototype demonstrations of 4 by 4 coded-aperture imaging using Hadamard coding have been performed and this technique has been successfully applied to map** THz beams by using a 6 by 6 aperture array at 590 GHz. The imaging results agree closely with theoretical calculations based on Gaussian beam transformation, demonstrating that this technique is promising for realizing real-time and low-cost terahertz cameras for many applications. The reported approach provides a simple but powerful means to visualize THz beams, which is highly desired in quasi-optical system alignment, quantum-cascade laser design and characterization, and THz antenna characterization. △ Less

Submitted 3 August, 2013; originally announced August 2013.

Comments: 12 pages, 5 figures

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

Authors: Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James Basham, Alex Boosalis, Xuelei Liang, Debdeep Jena, Curt A. Richter, Alan Seabaugh, David J. Gundlach, Huili G. Xing, N. V. Nguyen

Abstract: The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detectin… ▽ More The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detecting holes injected from a semiconductor emitter in IPE measurements. The observed electron and hole barrier heights are 3.5 eV and 4.1 eV, respectively. Thus the bandgap of Al2O3 can be further deduced to be 6.5 eV, in close agreement with the valued obtained by vacuum ultraviolet spectroscopic ellipsometry analysis. The detailed optical modeling of a graphene/Al2O3/Si stack reveals that by using graphene in IPE measurements the carrier injection from the emitter is significantly enhanced and the contribution of carrier injection from the collector electrode is minimal. The method can be readily extended to various IPE test structures for a complete band alignment analysis and interface characterization. △ Less

Submitted 5 August, 2013; v1 submitted 20 December, 2012; originally announced December 2012.

Comments: 15 pages, 5 figures

Journal ref: Applied Physics Letters Applied Physics Letters Applied Physics Letters 102 12 123106-123106-5 (2013)