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Three-dimensional integration enables ultra-low-noise, isolator-free Si photonics
Authors:
Chao Xiang,
Warren **,
Osama Terra,
Bozhang Dong,
Heming Wang,
Lue Wu,
Joel Guo,
Theodore J. Morin,
Eamonn Hughes,
Jonathan Peters,
Qing-Xin Ji,
Avi Feshali,
Mario Paniccia,
Kerry J. Vahala,
John E. Bowers
Abstract:
While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will require ultra-low-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format -- that is, on a single chip. Such…
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While photonic integrated circuits (PICs) are being widely used in applications such as telecommunications and datacenter interconnects, PICs capable of replacing bulk optics and fibers in high-precision, highly-coherent applications will require ultra-low-noise laser sources to be integrated with other photonic components in a compact and robustly aligned format -- that is, on a single chip. Such PICs could offer superior scalability for complex functionalities and volume production, as well as improved stability and reliability over time. However, there are two major issues preventing the realization of such envisioned PICs: the high phase noise of semiconductor lasers, and the difficulty of integrating optical isolators directly on chip. PICs are still considered as inferior solutions in optical systems such as microwave synthesizers, optical gyroscopes and atomic clocks, despite their advantages in size, weight, power consumption and cost (SWaPC). Here, we challenge this convention by introducing three-dimensional (3D) integration in silicon photonics that results in ultra-low-noise, isolator-free PICs. Through multiple monolithic and heterogeneous processing sequences, direct on-chip integration of III-V gain and ultra-low-loss (ULL) silicon nitride (SiN) waveguides with optical loss around 0.5 dB/m are demonstrated. Consequently, the demonstrated PIC enters a new regime, such that an integrated ultra-high-Q cavity reduces the laser noise close to that of fiber lasers. Moreover, the cavity acts as an effective block for any downstream on-chip or off-chip reflection-induced destabilization, thus eliminating the need for optical isolators. We further showcase isolator-free, widely-tunable, low-noise, heterodyne microwave generation using two ultra-low-noise lasers on the same silicon chip.
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Submitted 19 January, 2023;
originally announced January 2023.
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Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
Authors:
Chen Shang,
Kaiyin Feng,
Eamonn T. Hughes,
Andrew Clark,
Mukul Debnath,
Rosalyn Koscica,
Gerald Leake,
Joshua Herman,
David Harame,
Peter Ludewig,
Yating Wan,
John E. Bowers
Abstract:
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region…
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Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.
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Submitted 2 June, 2022;
originally announced June 2022.
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Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
Authors:
Jarod Meyer,
Aaron J. Muhowski,
Leland J. Nordin,
Eamonn T. Hughes,
Brian B. Haidet,
Daniel Wasserman,
Kunal Mukherjee
Abstract:
We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin film…
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We report on photoluminescence in the 3-7 $μ$m mid-wave infrared (MWIR) range from sub-100 nm strained thin films of rocksalt PbSe(001) grown on GaAs(001) substrates by molecular beam epitaxy. These bare films, grown epitaxially at temperatures below 400 °C, luminesce brightly at room temperature and have minority carrier lifetimes as long as 172 ns. The relatively long lifetimes in PbSe thin films are achievable despite threading dislocation densities exceeding $10^9$ $cm^{-2}$ arising from island growth on the nearly 8% lattice- and crystal-structure-mismatched GaAs substrate. Using quasi-continuous-wave and time-resolved photoluminescence, we show Shockley-Read-Hall recombination is slow in our high dislocation density PbSe films at room temperature, a hallmark of defect tolerance. Power-dependent photoluminescence and high injection excess carrier lifetimes at room temperature suggest that degenerate Auger recombination limits the efficiency of our films, though the Auger recombination rates are significantly lower than equivalent, III-V bulk materials and even a bit slower than expectations for bulk PbSe. Consequently, the combined effects of defect tolerance and low Auger recombination rates yield an estimated peak internal quantum efficiency of roughly 30% at room temperature, unparalleled in the MWIR for a severely lattice-mismatched thin film. We anticipate substantial opportunities for improving performance by optimizing crystal growth as well as understanding Auger processes in thin films. These results highlight the unique opportunity to harness the unusual chemical bonding in PbSe and related IV-VI semiconductors for heterogeneously integrated mid-infrared light sources constrained by tight thermal budgets in new device designs.
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Submitted 28 August, 2021;
originally announced August 2021.
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Defect filtering for thermal expansion induced dislocations in III-V lasers on silicon
Authors:
Jennifer Selvidge,
Justin Norman,
Eamonn T. Hughes,
Chen Shang,
Daehwan Jung,
Aidan A. Taylor,
MJ Kennedy,
Robert Herrick,
John E. Bowers,
Kunal Mukherjee
Abstract:
Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non…
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Epitaxially integrated III-V semiconductor lasers for silicon photonics have the potential to dramatically transform information networks, but currently, dislocations limit performance and reliability even in defect tolerant InAs quantum dot (QD) based lasers. Despite being below critical thickness, QD layers in these devices contain previously unexplained misfit dislocations, which facilitate non-radiative recombination. We demonstrate here that these misfit dislocations form during post-growth cooldown due to the combined effects of (1) thermal-expansion mismatch between the III-V layers and silicon and (2) precipitate and alloy hardening in the active region. By incorporating an additional sub-critical thickness, indium-alloyed misfit dislocation trap** layer, we leverage these mechanical hardening effects to our advantage, successfully displacing 95% of misfit dislocations from the QD layer in model structures. Unlike conventional dislocation mitigation strategies, the trap** layer reduces neither the number of threading dislocations nor the number of misfit dislocations. It simply shifts the position of misfit dislocations away from the QD layer, reducing the defects' impact on luminescence. In full lasers, adding a misfit dislocation trap** layer both above and below the QD active region displaces misfit dislocations and substantially improves performance: we measure a twofold reduction in lasing threshold currents and a greater than threefold increase in output power. Our results suggest that devices employing both traditional threading dislocation reduction techniques and optimized misfit dislocation trap** layers may finally lead to fully integrated, commercially viable silicon-based photonic integrated circuits.
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Submitted 4 August, 2020; v1 submitted 12 May, 2020;
originally announced May 2020.
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Scattered slice SHARD reconstruction for motion correction in multi-shell diffusion MRI
Authors:
Daan Christiaens,
Lucilio Cordero-Grande,
Maximilian Pietsch,
Jana Hutter,
Anthony N. Price,
Emer J. Hughes,
Katy Vecchiato,
Maria Deprez,
A. David Edwards,
Joseph V. Hajnal,
J-Donald Tournier
Abstract:
Diffusion MRI offers a unique probe into neural microstructure and connectivity in the develo** brain. However, analysis of neonatal brain imaging data is complicated by inevitable subject motion, leading to a series of scattered slices that need to be aligned within and across diffusion-weighted contrasts. Here, we develop a reconstruction method for scattered slice multi-shell high angular res…
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Diffusion MRI offers a unique probe into neural microstructure and connectivity in the develo** brain. However, analysis of neonatal brain imaging data is complicated by inevitable subject motion, leading to a series of scattered slices that need to be aligned within and across diffusion-weighted contrasts. Here, we develop a reconstruction method for scattered slice multi-shell high angular resolution diffusion imaging (HARDI) data, jointly estimating an uncorrupted data representation and motion parameters at the slice or multiband excitation level. The reconstruction relies on data-driven representation of multi-shell HARDI data using a bespoke spherical harmonics and radial decomposition (SHARD), which avoids imposing model assumptions, thus facilitating to compare various microstructure imaging methods in the reconstructed output. Furthermore, the proposed framework integrates slice-level outlier rejection, distortion correction, and slice profile correction. We evaluate the method in the neonatal cohort of the develo** Human Connectome Project (650 scans). Validation experiments demonstrate accurate slice-level motion correction across the age range and across the range of motion in the population. Results in the neonatal data show successful reconstruction even in severely motion-corrupted subjects. In addition, we illustrate how local tissue modelling can extract advanced microstructure features such as orientation distribution functions from the motion-corrected reconstructions.
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Submitted 21 April, 2020; v1 submitted 8 May, 2019;
originally announced May 2019.
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SLAC's Polarized Electron Source Laser System and Minimization of Electron Beam Helicity Correlations for the E-158 Parity Violation Experiment
Authors:
T. B. Humensky,
R. Alley,
A. Brachmann,
M. J. Browne,
G. D. Cates,
J. Clendenin,
J. deLamare,
J. Frisch,
T. Galetto,
E. W. Hughes,
K. S. Kumar,
P. Mastromarino,
J. Sodja,
P. A. Souder,
J. Turner,
M. Woods
Abstract:
SLAC E-158 is an experiment designed to make the first measurement of parity violation in Moller scattering. E-158 will measure the right-left cross-section asymmetry, A_LR^Moller, in the elastic scattering of a 45-GeV polarized electron beam off unpolarized electrons in a liquid hydrogen target. E-158 plans to measure the expected Standard Model asymmetry of ~10^-7 to an accuracy of better than…
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SLAC E-158 is an experiment designed to make the first measurement of parity violation in Moller scattering. E-158 will measure the right-left cross-section asymmetry, A_LR^Moller, in the elastic scattering of a 45-GeV polarized electron beam off unpolarized electrons in a liquid hydrogen target. E-158 plans to measure the expected Standard Model asymmetry of ~10^-7 to an accuracy of better than 10^-8. To make this measurement, the polarized electron source requires for operation an intense circularly polarized laser beam and the ability to quickly switch between right- and left-helicity polarization states with minimal right-left helicity-correlated asymmetries in the resulting beam parameters (intensity, position, angle, spot size, and energy), ^beam A_LR's. This laser beam is produced by a unique SLAC-designed flashlamp-pumped Ti:Sapphire laser and is propagated through a carefully designed set of polarization optics. We analyze the transport of nearly circularly polarized light through the optical system and identify several mechanisms that generate ^beam A_LR's. We show that the dominant effects depend linearly on particular polarization phase shifts in the optical system. We present the laser system design and a discussion of the suppression and control of ^beam A_LR's. We also present results on beam performance from engineering and physics runs for E-158.
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Submitted 19 September, 2002; v1 submitted 18 September, 2002;
originally announced September 2002.
