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Deep Learning of Structural Morphology Imaged by Scanning X-ray Diffraction Microscopy
Authors:
Aileen Luo,
Tao Zhou,
Martin V. Holt,
Andrej Singer,
Mathew J. Cherukara
Abstract:
Scanning X-ray nanodiffraction microscopy is a powerful technique for spatially resolving nanoscale structural morphologies by diffraction contrast. One of the critical challenges in experimental nanodiffraction data analysis is posed by the convergence angle of nanoscale focusing optics which creates simultaneous dependency of the far-field scattering data on three independent components of the l…
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Scanning X-ray nanodiffraction microscopy is a powerful technique for spatially resolving nanoscale structural morphologies by diffraction contrast. One of the critical challenges in experimental nanodiffraction data analysis is posed by the convergence angle of nanoscale focusing optics which creates simultaneous dependency of the far-field scattering data on three independent components of the local strain tensor - corresponding to dilation and two potential rigid body rotations of the unit cell. All three components are in principle resolvable through a spatially mapped sample tilt series however traditional data analysis is computationally expensive and prone to artifacts. In this study, we implement NanobeamNN, a convolutional neural network specifically tailored to the analysis of scanning probe X-ray microscopy data. NanobeamNN learns lattice strain and rotation angles from simulated diffraction of a focused X-ray nanobeam by an epitaxial thin film and can directly make reasonable predictions on experimental data without the need for additional fine-tuning. We demonstrate that this approach represents a significant advancement in computational speed over conventional methods, as well as a potential improvement in accuracy over the current standard.
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Submitted 24 June, 2024; v1 submitted 11 June, 2024;
originally announced June 2024.
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High-resolution spatio-temporal strain imaging reveals loss mechanisms in a surface acoustic wave device
Authors:
Tao Zhou,
Alexandre Reinhardt,
Marie Bousquet,
Joel Eymery,
Steven Leake,
Martin V. Holt,
Paul G. Evans,
Tobias Schülli
Abstract:
Surface acoustic wave devices are key components for processing radio frequency signals in wireless communication because these devices offer simultaneously high performance, compact size and low cost. The optimization of the device structure requires a quantitative understanding of energy conversion and loss mechanisms. Stroboscopic full-field diffraction x-ray microscopy studies of a prototypica…
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Surface acoustic wave devices are key components for processing radio frequency signals in wireless communication because these devices offer simultaneously high performance, compact size and low cost. The optimization of the device structure requires a quantitative understanding of energy conversion and loss mechanisms. Stroboscopic full-field diffraction x-ray microscopy studies of a prototypical one-port resonator device revealed the existence of unanticipated acoustic loss. A non-uniform acoustic excitation in the active area was responsible for the substantial end and side leakages observed at the design frequency. Quantitative analysis of the strain amplitude using a wave decomposition method allowed the determination of several key device parameters. This high-resolution spatiotemporal strain imaging technique is, more generally, suited for studying nanophononics, specifically when the feature size is smaller than optical wavelengths. The strain sensitivity allows precise measurement of acoustic waves with picometer-scale amplitude.
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Submitted 20 April, 2024;
originally announced May 2024.
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Quasi-deterministic Localization of Er Emitters in Thin Film TiO$_2$ through Submicron-scale Crystalline Phase Control
Authors:
Sean E. Sullivan,
Jonghoon Ahn,
Tao Zhou,
Preetha Saha,
Martin V. Holt,
Supratik Guha,
F. J. Heremans,
Manish Kumar Singh
Abstract:
With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmiss…
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With their shielded 4f orbitals, rare-earth ions (REIs) offer optical and electron spin transitions with good coherence properties even when embedded in a host crystal matrix, highlighting their utility as promising quantum emitters and memories for quantum information processing. Among REIs, trivalent erbium (Er$^{3+}$) uniquely has an optical transition in the telecom C-band, ideal for transmission over optical fibers, and making it well-suited for applications in quantum communication. The deployment of Er$^{3+}$ emitters into a thin film TiO$_2$ platform has been a promising step towards scalable integration; however, like many solid-state systems, the deterministic spatial placement of quantum emitters remains an open challenge. We investigate laser annealing as a means to locally tune the optical resonance of Er$^{3+}$ emitters in TiO$_2$ thin films on Si. Using both nanoscale X-ray diffraction measurements and cryogenic photoluminescence spectroscopy, we show that tightly focused below-gap laser annealing can induce anatase to rutile phase transitions in a nearly diffraction-limited area of the films and improve local crystallinity through grain growth. As a percentage of the Er:TiO$_2$ is converted to rutile, the Er$^{3+}$ optical transition blueshifts by 13 nm. We explore the effects of changing laser annealing time and show that the amount of optically active Er:rutile increases linearly with laser power. We additionally demonstrate local phase conversion on microfabricated Si structures, which holds significance for quantum photonics.
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Submitted 28 August, 2023;
originally announced August 2023.
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Directional Detection of Dark Matter Using Solid-State Quantum Sensing
Authors:
Reza Ebadi,
Mason C. Marshall,
David F. Phillips,
Johannes Cremer,
Tao Zhou,
Michael Titze,
Pauli Kehayias,
Maziar Saleh Ziabari,
Nazar Delegan,
Surjeet Rajendran,
Alexander O. Sushkov,
F. Joseph Heremans,
Edward S. Bielejec,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high…
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Next-generation dark matter (DM) detectors searching for weakly interacting massive particles (WIMPs) will be sensitive to coherent scattering from solar neutrinos, demanding an efficient background-signal discrimination tool. Directional detectors improve sensitivity to WIMP DM despite the irreducible neutrino background. Wide-bandgap semiconductors offer a path to directional detection in a high-density target material. A detector of this type operates in a hybrid mode. The WIMP or neutrino-induced nuclear recoil is detected using real-time charge, phonon, or photon collection. The directional signal, however, is imprinted as a durable sub-micron damage track in the lattice structure. This directional signal can be read out by a variety of atomic physics techniques, from point defect quantum sensing to x-ray microscopy. In this white paper, we present the detector principle and review the status of the experimental techniques required for directional readout of nuclear recoil tracks. Specifically, we focus on diamond as a target material; it is both a leading platform for emerging quantum technologies and a promising component of next-generation semiconductor electronics. Based on the development and demonstration of directional readout in diamond over the next decade, a future WIMP detector will leverage or motivate advances in multiple disciplines towards precision dark matter and neutrino physics.
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Submitted 14 June, 2023; v1 submitted 11 March, 2022;
originally announced March 2022.
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Scanning X-ray Diffraction Microscopy for Diamond Quantum Sensing
Authors:
Mason C. Marshall,
David F. Phillips,
Matthew J. Turner,
Mark J. H. Ku,
Tao Zhou,
Nazar Delegan,
F. Joseph Heremans,
Martin V. Holt,
Ronald L. Walsworth
Abstract:
Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal…
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Understanding nano- and micro-scale crystal strain in CVD diamond is crucial to the advancement of diamond quantum technologies. In particular, the presence of such strain and its characterization present a challenge to diamond-based quantum sensing and information applications -- as well as for future dark matter detectors where directional information of incoming particles is encoded in crystal strain. Here, we exploit nanofocused scanning X-ray diffraction microscopy to quantitatively measure crystal deformation from defects in diamond with high spatial and strain resolution. Combining information from multiple Bragg angles allows stereoscopic three-dimensional modeling of strain feature geometry; the diffraction results are validated via comparison to optical measurements of the strain tensor based on spin-state-dependent spectroscopy of ensembles of nitrogen vacancy (NV) centers in the diamond. Our results demonstrate both strain and spatial resolution sufficient for directional detection of dark matter via X-ray measurement of crystal strain, and provide a promising tool for diamond growth analysis and improvement of defect-based sensing.
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Submitted 14 October, 2022; v1 submitted 15 March, 2021;
originally announced March 2021.
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Real-time sparse-sampled Ptychographic imaging through deep neural networks
Authors:
Mathew J. Cherukara,
Tao Zhou,
Youssef Nashed,
Pablo Enfedaque,
Alex Hexemer,
Ross J. Harder,
Martin V. Holt
Abstract:
Ptychography has rapidly grown in the fields of X-ray and electron imaging for its unprecedented ability to achieve nano or atomic scale resolution while simultaneously retrieving chemical or magnetic information from a sample. A ptychographic reconstruction is achieved by means of solving a complex inverse problem that imposes constraints both on the acquisition and on the analysis of the data, w…
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Ptychography has rapidly grown in the fields of X-ray and electron imaging for its unprecedented ability to achieve nano or atomic scale resolution while simultaneously retrieving chemical or magnetic information from a sample. A ptychographic reconstruction is achieved by means of solving a complex inverse problem that imposes constraints both on the acquisition and on the analysis of the data, which typically precludes real-time imaging due to computational cost involved in solving this inverse problem. In this work we propose PtychoNN, a novel approach to solve the ptychography reconstruction problem based on deep convolutional neural networks. We demonstrate how the proposed method can be used to predict real-space structure and phase at each scan point solely from the corresponding far-field diffraction data. The presented results demonstrate how PtychoNN can effectively be used on experimental data, being able to generate high quality reconstructions of a sample up to hundreds of times faster than state-of-the-art ptychography reconstruction solutions once trained. By surpassing the typical constraints of iterative model-based methods, we can significantly relax the data acquisition sampling conditions and produce equally satisfactory reconstructions. Besides drastically accelerating acquisition and analysis, this capability can enable new imaging scenarios that were not possible before, in cases of dose sensitive, dynamic and extremely voluminous samples.
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Submitted 15 April, 2020;
originally announced April 2020.
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Competing Phases in Epitaxial Vanadium Dioxide at Nanoscale
Authors:
Yogesh Sharma,
Martin V. Holt,
Nouamane Laanait,
Xiang Gao,
Ilia Ivanov,
Liam Collins,
Changhee Sohn,
Zhaoliang Liao,
Elizabeth Skoropata,
Sergei V. Kalinin,
Nina Balke,
Gyula Eres,
Thomas Z. Ward,
Ho Nyung Lee
Abstract:
Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary underg…
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Phase competition in correlated oxides offers tantalizing opportunities as many intriguing physical phenomena occur near the phase transitions. Owing to a sharp metal-insulator transition (MIT) near room temperature, correlated vanadium dioxide (VO2) exhibits a strong competition between insulating and metallic phases that is important for practical applications. However, the phase boundary undergoes strong modification when strain is involved, yielding complex phase transitions. Here, we report the emergence of the nanoscale M2 phase domains in VO2 epitaxial films under anisotropic strain relaxation. The phase states of the films are imaged by multi-length-scale probes, detecting the structural and electrical properties in individual local domains. Competing evolution of the M1 and M2 phases indicates a critical role of lattice-strain on both the stability of the M2 Mott phase and the energetics of the MIT in VO2 films. This study demonstrates how strain engineering can be utilized to design phase states, which allow deliberate control of MIT behavior at the nanoscale in epitaxial VO2 films.
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Submitted 13 August, 2019;
originally announced August 2019.
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Quantum well stabilized point defect spin qubits
Authors:
Ivády,
J. Davidsson,
N. Delegan,
A. L. Falk,
P. V. Klimov,
S. J. Whiteley,
S. O. Hruszkewycz,
M. V. Holt,
F. J. Heremans,
N. T. Son,
D. D. Awschalom,
I. A. Abrikosov,
A. Gali
Abstract:
Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engine…
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Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.
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Submitted 21 April, 2020; v1 submitted 28 May, 2019;
originally announced May 2019.
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Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In,Ga)As/GaAs nanowire core-shell quantum wells
Authors:
Jonas Lähnemann,
Megan O. Hill,
Jesús Herranz,
Oliver Marquardt,
Guanhui Gao,
Ali Al Hassan,
Arman Davtyan,
Stephan O. Hruszkewycz,
Martin V. Holt,
Chunyi Huang,
Irene Calvo-Almazán,
Uwe Jahn,
Ullrich Pietsch,
Lincoln J. Lauhon,
Lutz Geelhaar
Abstract:
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite pol…
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While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blueshift of the quantum well emission energy by $75\pm15$ meV in the wurtzite polytype segment. Nanoprobe x-ray diffraction and atom probe tomography enable $\mathbf{k}\cdot\mathbf{p}$ calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional bandgap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures.
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Submitted 8 August, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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High resolution three dimensional structural microscopy by single angle Bragg ptychography
Authors:
S. O. Hruszkewycz,
M. Allain,
M. V. Holt,
C. E. Murray,
J. R. Holt,
P. H. Fuoss,
V. Chamard
Abstract:
We present an efficient method of imaging 3D nanoscale lattice behavior and strain fields in crystalline materials with a new methodology -- three dimensional Bragg projection ptychography (3DBPP). In this method, the 2D sample structure information encoded in a coherent high-angle Bragg peak measured at a fixed angle is combined with the real-space scanning probe positions to reconstruct the 3D s…
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We present an efficient method of imaging 3D nanoscale lattice behavior and strain fields in crystalline materials with a new methodology -- three dimensional Bragg projection ptychography (3DBPP). In this method, the 2D sample structure information encoded in a coherent high-angle Bragg peak measured at a fixed angle is combined with the real-space scanning probe positions to reconstruct the 3D sample structure. This work introduces an entirely new means of three dimensional structural imaging of nanoscale materials and eliminates the experimental complexities associated with rotating nanoscale samples. We present the framework for the method and demonstrate our approach with a numerical demonstration, an analytical derivation, and an experimental reconstruction of lattice distortions in a component of a nanoelectronic prototype device.
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Submitted 3 June, 2015;
originally announced June 2015.
