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Combining experiments on luminescent centres in hexagonal boron nitride with the polaron model and ab initio methods towards the identification of their microscopic origin
Authors:
Moritz Fischer,
Ali Sajid,
Jake Iles-Smith,
Alexander Hötger,
Denys I. Miakota,
Mark. K. Svendsen,
Christoph Kastl,
Stela Canulescu,
Sanshui Xiao,
Martijn Wubs,
Kristian S. Thygesen,
Alexander W. Holleitner,
Nicolas Stenger
Abstract:
The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the c…
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The two-dimensional material hexagonal boron nitride (hBN) hosts luminescent centres with emission energies of 2 eV which exhibit pronounced phonon sidebands. We investigate the microscopic origin of these luminescent centres by combining ab initio calculations with non-perturbative open quantum system theory to study the emission and absorption properties of 26 defect transitions. Comparing the calculated line shapes with experiments we narrow down the microscopic origin to three carbon-based defects: $\mathrm{C_2C_B}$, $\mathrm{C_2C_N}$, and $\mathrm{V_NC_B}$. The theoretical method developed enables us to calculate so-called photoluminescence excitation (PLE) maps, which show excellent agreement with our experiments. The latter resolves higher-order phonon transitions, thereby confirming both the vibronic structure of the optical transition and the phonon-assisted excitation mechanism with a phonon energy 170 meV. We believe that the presented experiments and polaron-based method accurately describe luminescent centres in hBN and will help to identify their microscopic origin.
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Submitted 3 April, 2023; v1 submitted 19 September, 2022;
originally announced September 2022.
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Achieving a quantum smart workforce
Authors:
Clarice D. Aiello,
D. D. Awschalom,
Hannes Bernien,
Tina Brower-Thomas,
Kenneth R. Brown,
Todd A. Brun,
Justin R. Caram,
Eric Chitambar,
Rosa Di Felice,
Michael F. J. Fox,
Stephan Haas,
Alexander W. Holleitner,
Eric R. Hudson,
Jeffrey H. Hunt,
Robert Joynt,
Scott Koziol,
H. J. Lewandowski,
Douglas T. McClure,
Jens Palsberg,
Gina Passante,
Kristen L. Pudenz,
Christopher J. K. Richardson,
Jessica L. Rosenberg,
R. S. Ross,
Mark Saffman
, et al. (7 additional authors not shown)
Abstract:
Interest in building dedicated Quantum Information Science and Engineering (QISE) education programs has greatly expanded in recent years. These programs are inherently convergent, complex, often resource intensive and likely require collaboration with a broad variety of stakeholders. In order to address this combination of challenges, we have captured ideas from many members in the community. Thi…
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Interest in building dedicated Quantum Information Science and Engineering (QISE) education programs has greatly expanded in recent years. These programs are inherently convergent, complex, often resource intensive and likely require collaboration with a broad variety of stakeholders. In order to address this combination of challenges, we have captured ideas from many members in the community. This manuscript not only addresses policy makers and funding agencies (both public and private and from the regional to the international level) but also contains needs identified by industry leaders and discusses the difficulties inherent in creating an inclusive QISE curriculum. We report on the status of eighteen post-secondary education programs in QISE and provide guidance for building new programs. Lastly, we encourage the development of a comprehensive strategic plan for quantum education and workforce development as a means to make the most of the ongoing substantial investments being made in QISE.
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Submitted 23 October, 2020;
originally announced October 2020.
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Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit
Authors:
Jakob Wierzbowski,
Julian Klein,
Florian Sigger,
Christian Straubinger,
Malte Kremser,
Takashi Taniguchi,
Kenji Watanabe,
Ursula Wurstbauer,
Alexander W. Holleitner,
Michael Kaniber,
Kai Müller,
Jonathan J. Finley
Abstract:
We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0 \text{ meV}$ for p-WSe…
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We demonstrate the reduction of the inhomogeneous linewidth of the free excitons in atomically thin transition metal dichalcogenides (TMDCs) MoSe$_{2}$, WSe$_{2}$ and MoS$_{2}$ by encapsulation within few nanometer thick hBN. Encapsulation is shown to result in a significant reduction of the 10K excitonic linewidths down to $\sim3.5 \text{ meV}$ for n-MoSe$_{2}$, $\sim5.0 \text{ meV}$ for p-WSe$_{2}$ and $\sim4.8 \text{ meV}$ for n-MoS$_{2}$. Evidence is obtained that the hBN environment effectively lowers the Fermi level since the relative spectral weight shifts towards the neutral exciton emission in n-doped TMDCs and towards charged exciton emission in p-doped TMDCs. Moreover, we find that fully encapsulated MoS$_{2}$ shows resolvable exciton and trion emission even after high power density excitation in contrast to non-encapsulated materials. Our findings suggest that encapsulation of mechanically exfoliated few-monolayer TMDCs within nanometer thick hBN dramatically enhances optical quality, producing ultra-narrow linewidths that approach the homogeneous limit.
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Submitted 30 April, 2017;
originally announced May 2017.
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Ultrafast electronic read-out of diamond NV centers coupled to graphene
Authors:
Andreas Brenneis,
Louis Gaudreau,
Max Seifert,
Helmut Karl,
Martin S. Brandt,
Hans Huebl,
Jose A. Garrido,
Frank H. L. Koppens,
Alexander W. Holleitner
Abstract:
Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been co…
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Nonradiative transfer processes are often regarded as loss channels for an optical emitter1, since they are inherently difficult to be experimentally accessed. Recently, it has been shown that emitters, such as fluorophores and nitrogen vacancy centers in diamond, can exhibit a strong nonradiative energy transfer to graphene. So far, the energy of the transferred electronic excitations has been considered to be lost within the electron bath of the graphene. Here, we demonstrate that the trans-ferred excitations can be read-out by detecting corresponding currents with picosecond time resolution. We electrically detect the spin of nitrogen vacancy centers in diamond electronically and con-trol the nonradiative transfer to graphene by electron spin resonance. Our results open the avenue for incorporating nitrogen vacancy centers as spin qubits into ultrafast electronic circuits and for harvesting non-radiative transfer processes electronically.
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Submitted 8 August, 2014;
originally announced August 2014.
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Broadband Purcell enhanced emission dynamics of quantum dots in linear photonic crystal waveguides
Authors:
Arne Laucht,
Thomas Günthner,
Simon Pütz,
Rebecca Saive,
Simon Frédérick,
Norman Hauke,
Max Bichler,
Markus-Christian Amann,
Alexander W. Holleitner,
Michael Kaniber,
Jonathan J. Finley
Abstract:
The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the wavegui…
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The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally, and time-resolved photoluminescence measurements, detecting normal to the plane of the photonic crystal. For quantum dots emitting in resonance with the waveguide mode, a ~21x enhancement of photoluminescence intensity is observed as compared to dots in the unprocessed region of the wafer. This enhancement can be traced back to the Purcell enhanced emission of quantum dots into leaky and guided modes of the waveguide with moderate Purcell factors up to ~4x. Emission into guided modes is shown to be efficiently scattered out of the waveguide within a few microns, contributing to the out-of-plane emission and allowing the use of photonic crystal waveguides as broadband, efficiency-enhancing structures for surface-emitting diodes or single photon sources.
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Submitted 7 May, 2012;
originally announced May 2012.
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A Waveguide-Coupled On-Chip Single Photon Source
Authors:
A. Laucht,
S. Pütz,
T. Günthner,
N. Hauke,
R. Saive,
S. Frédérick,
M. Bichler,
M. -C. Amann,
A. W. Holleitner,
M. Kaniber,
J. J. Finley
Abstract:
We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are…
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We investigate single photon generation from individual self-assembled InGaAs quantum dots coupled to the guided optical mode of a GaAs photonic crystal waveguide. By performing confocal microscopy measurements on single dots positioned within the waveguide, we locate their positions with a precision better than 0.5 \mum. Time-resolved photoluminescence and photon autocorrelation measurements are used to prove the single photon character of the emission into the propagating waveguide mode. The results obtained demonstrate that such nanostructures can be used to realize an on-chip, highly directed single photon source with single mode spontaneous emision coupling efficiencies in excess of beta~85 % and the potential to reach maximum emission rates >1 GHz.
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Submitted 31 January, 2012; v1 submitted 24 January, 2012;
originally announced January 2012.
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Forming and confining of dipolar excitons by quantizing magnetic fields
Authors:
K. Kowalik-Seidl,
X. P. Vögele,
F. Seilmeier,
D. Schuh,
W. Wegscheider,
A. W. Holleitner,
J. P. Kotthaus
Abstract:
We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illumin…
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We show that a magnetic field perpendicular to an AlGaAs/GaAs coupled quantum well efficiently traps dipolar excitons and leads to the stabilization of the excitonic formation and confinement in the illumination area. Hereby, the density of dipolar excitons is remarkably enhanced up to $\sim 10^{11} cm^{-2}$. By means of Landau level spectroscopy we study the density of excess holes in the illuminated region. Depending on the excitation power and the applied electric field, the hole density can be tuned over one order of magnitude up to $\sim 2.5$ $10^{11} cm^{-2}$ - a value comparable with typical carrier densities in modulation-doped structures.
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Submitted 16 February, 2011; v1 submitted 2 September, 2010;
originally announced September 2010.
