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Extracting Quantitative Dielectric Properties from Pump-Probe Spectroscopy
Authors:
Arjun Ashoka,
Ronnie R. Tamming,
Aswathy V. Girija,
Hope Bretscher,
Sachin Dev Verma,
Shang-Da Yang,
Chih-Hsuan Lu,
Justin M. Hodgkiss,
David Ritchie,
Chong Chen,
Charles G. Smith,
Christoph Schnedermann,
Michael B. Price,
Kai Chen,
Akshay Rao
Abstract:
Optical pump-probe spectroscopy is a powerful tool for the study of non-equilibrium electronic dynamics and finds wide applications across a range of fields, from physics and chemistry to material science and biology. However, a shortcoming of conventional pump-probe spectroscopy is that photoinduced changes in transmission, reflection and scattering can simultaneously contribute to the measured d…
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Optical pump-probe spectroscopy is a powerful tool for the study of non-equilibrium electronic dynamics and finds wide applications across a range of fields, from physics and chemistry to material science and biology. However, a shortcoming of conventional pump-probe spectroscopy is that photoinduced changes in transmission, reflection and scattering can simultaneously contribute to the measured differential spectra, leading to ambiguities in assigning the origin of spectral signatures and ruling out quantitative interpretation of the spectra. Ideally, these methods would measure the underlying dielectric function (or the complex refractive index) which would then directly provide quantitative information on the transient excited state dynamics free of these ambiguities. Here we present and test a model independent route to transform differential transmission or reflection spectra, measured via conventional optical pump-probe spectroscopy, to changes in the quantitative transient dielectric function. We benchmark this method against changes in the real refractive index measured using time-resolved Frequency Domain Interferometry in prototypical inorganic and organic semiconductor films. Our methodology can be applied to existing and future pump-probe data sets, allowing for an unambiguous and quantitative characterisation of the transient photoexcited spectra of materials. This in turn will accelerate the adoption of pump-probe spectroscopy as a facile and robust materials characterisation and screening tool.
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Submitted 24 August, 2021;
originally announced August 2021.
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Bandgap Control in Two-Dimensional Semiconductors via Coherent Do** of Plasmonic Hot Electrons
Authors:
Yu-Hui Chen,
Ronnie R. Tamming,
Kai Chen,
Zhepeng Zhang,
Yanfeng Zhang,
Justin M. Hodgkiss,
Richard J. Blaikie,
Boyang Ding,
Min Qiu
Abstract:
Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely tunable bandgap (renormalisation up to 650 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently do** the lattice with plasmonic hot ele…
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Bandgap control is of central importance for semiconductor technologies. The traditional means of control is to dope the lattice chemically, electrically or optically with charge carriers. Here, we demonstrate for the first time a widely tunable bandgap (renormalisation up to 650 meV at room-temperature) in two-dimensional (2D) semiconductors by coherently do** the lattice with plasmonic hot electrons. In particular, we integrate tungsten-disulfide (WS$_2$) monolayers into a self-assembled plasmonic crystal, which enables coherent coupling between semiconductor excitons and plasmon resonances. Accompanying this process, the plasmon-induced hot electrons can repeatedly fill the WS$_2$ conduction band, leading to population inversion and a significant reconstruction in band structures and exciton relaxations. Our findings provide an innovative and effective measure to engineer optical responses of 2D semiconductors, allowing a great flexiblity in design and optimisation of photonic and optoelectronic devices.
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Submitted 7 March, 2020;
originally announced March 2020.
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Ultrafast Triplet Pair Formation and Subsequent Thermally Activated Dissociation Control Efficient Endothermic Singlet Exciton Fission
Authors:
Hannah L. Stern,
Alexandre Cheminal,
Shane R. Yost,
Katharina Broch,
Sam L. Bayliss,
Kai Chen,
Maxim Tabachnyk,
Karl Thorley,
Neil Greenham,
Justin Hodgkiss,
John Anthony,
Martin Head-Gordon,
Andrew J. Musser,
Akshay Rao,
Richard H. Friend
Abstract:
Singlet exciton fission (SF), the conversion of one spin-singlet exciton (S1) into two spin-triplet excitons (T1), could provide a means to overcome the Shockley-Queisser limit in photovoltaics. SF as measured by the decay of S1 has been shown to occur efficiently and independently of temperature even when the energy of S1 is as much as 200 meV less than 2T1. Here, we study films of TIPS-tetracene…
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Singlet exciton fission (SF), the conversion of one spin-singlet exciton (S1) into two spin-triplet excitons (T1), could provide a means to overcome the Shockley-Queisser limit in photovoltaics. SF as measured by the decay of S1 has been shown to occur efficiently and independently of temperature even when the energy of S1 is as much as 200 meV less than 2T1. Here, we study films of TIPS-tetracene using transient optical spectroscopy and show that the initial rise of the triplet pair state (TT) occurs in 300 fs, matched by rapid loss of S1 stimulated emission, and that this process is mediated by the strong coupling of electronic and vibrational degrees of freedom. This is followed by a slower 10 ps morphology-dependent phase of S1 decay and TT growth. We observe the TT to be thermally dissociated on 10-100 ns timescales to form free triplets. This provides a model for "temperature independent", efficient TT formation and thermally activated TT separation.
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Submitted 5 April, 2017;
originally announced April 2017.
