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A Small Step for Epitaxy, a Large Step Towards Twist Angle Control in 2D Heterostructures
Authors:
Oliver Maßmeyer,
Jürgen Belz,
Badrosadat Ojaghi Dogahe,
Maximilian Widemann,
Robin Günkel,
Johannes Glowatzki,
Max Bergmann,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Andreas Beyer,
Kerstin Volz
Abstract:
Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and a precise cont…
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Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and a precise control of the in-plane twist angle in these heterostructures are essential to achieve superior properties and need to be established through large-scale device fabrication. To gain fundamental insight into the control of these twist angles, 2D heterostructures of tungsten disulfide (WS2) and graphene grown by bottom-up synthesis via metal-organic chemical vapor deposition (MOCVD) are investigated using a scanning transmission electron microscope (STEM). Specifically, the combination of conventional high-resolution imaging with scanning nano beam diffraction (SNBD) using advanced 4D STEM techniques is used to analyze moiré structures. The latter technique is used to reveal the epitaxial alignment within the WS2/Gr heterostructure, showing a direct influence of the underlying graphene layers on the moiré formation in the subsequent WS2 layers. In particular, the importance of grain boundaries within the underlying WS2 and Gr layers for the formation of moiré patterns with rotation angles below 2° is discussed.
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Submitted 8 February, 2024;
originally announced February 2024.
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Button Shear Testing for Adhesion Measurements of 2D Materials
Authors:
Josef Schätz,
Navin Nayi,
Jonas Weber,
Christoph Metzke,
Sebastian Lukas,
Agata Piacentini,
Eros Reato,
Jürgen Walter,
Tim Schaffus,
Fabian Streb,
Annika Grundmann,
Holger Kalisch,
Michael Heuken,
Andrei Vescan,
Stephan Pindl,
Max C. Lemme
Abstract:
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, but…
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Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene and hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide (SiO${_2}$) and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on SiO${_2}$ and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying adhesion of 2D materials.
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Submitted 13 March, 2024; v1 submitted 11 September, 2023;
originally announced September 2023.
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Comprehensive evidence of lasing from a 2D material enabled by a dual-resonance metasurface
Authors:
Isabel Barth,
Manuel Deckart,
Donato Conteduca,
Guilherme S Arruda,
Zeki Hayran,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Francesco Monticone,
Thomas F Krauss,
Emiliano R Martins,
Yue Wang
Abstract:
Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD nanolasers presents a challenge, as their limited output power makes it difficult to distinguish between true las…
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Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD nanolasers presents a challenge, as their limited output power makes it difficult to distinguish between true laser operation and other "laser-like" phenomena. Here, we present comprehensive evidence of lasing from a CVD-grown tungsten disulphide (WS$_2$) monolayer. The monolayer is placed on a dual-resonance dielectric metasurface with a rectangular lattice designed to enhance both absorption and emission; resulting in an ultralow threshold operation (threshold <1 W/cm$^2$). We provide a thorough study of the laser performance at room temperature, paying special attention to directionality, output power, and spatial coherence. Notably, our lasers demonstrated a coherence length of over 30 $μ$m, which is several times greater than what has been reported for 2D material lasers so far. Our realisation of a single-mode laser from a wafer-scale CVD-grown monolayer presents exciting opportunities for integration and the development of novel applications.
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Submitted 20 June, 2023;
originally announced June 2023.
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Understanding the impact of heavy ions and tailoring the optical properties of large-area Monolayer WS2 using Focused Ion Beam
Authors:
Fahrettin Sarcan,
Nicola J. Fairbairn,
Panaiot Zotev,
Toby Severs-Millard,
Daniel Gillard,
Xiaochen Wang,
Ben Conran,
Michael Heuken,
Ayse Erol,
Alexander I. Tartakovskii,
Thomas F. Krauss,
Gordon J. Hedley,
Yue Wang
Abstract:
Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials such as two-dimensional transition metal dichalcogenides (TMDCs), providing desirable properties in TMDC-based optoelectronic devices. However, the damage caused by the FIB irradiation and milling process to these delica…
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Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials such as two-dimensional transition metal dichalcogenides (TMDCs), providing desirable properties in TMDC-based optoelectronic devices. However, the damage caused by the FIB irradiation and milling process to these delicate atomically thin materials, especially in the extended area, has not yet been elaboratively characterised. Understanding the correlation between lateral ion beam effects and optical properties of 2D TMDCs is crucial in designing and fabricating high-performance optoelectronic devices. In this work, we investigate lateral damage in large-area monolayer WS2 caused by the gallium focused ion beam milling process. Three distinct zones away from the milling location are identified and characterised via steady-state photoluminescence (PL) and Raman spectroscopy. An unexpected bright ring-shaped emission around the milled location has been revealed by time-resolved PL spectroscopy with high spatial resolution. Our finding opens new avenues for tailoring the optical properties of TMDCs by charge and defect engineering via focused ion beam lithography. Furthermore, our study provides evidence that while some localised damage is inevitable, distant destruction can be eliminated by reducing the ion beam current. It paves the way for the use of FIB to create nanostructures in 2D TMDCs, as well as the design and realisation of optoelectrical devices on a wafer scale.
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Submitted 9 October, 2022;
originally announced October 2022.
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Zero Bias Power Detector Circuits based on MoS$_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates
Authors:
Eros Reato,
Paula Palacios,
Burkay Uzlu,
Mohamed Saeed,
Annika Grundmann,
Zhenyu Wang,
Daniel S. Schneider,
Zhenxing Wang,
Michael Heuken,
Holger Kalisch,
Andrei Vescan,
Alexandra Radenovic,
Andras Kis,
Daniel Neumaier,
Renato Negra,
Max C. Lemme
Abstract:
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing dif…
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We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS$_2$, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.
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Submitted 9 April, 2022; v1 submitted 9 February, 2022;
originally announced February 2022.
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Vertical GaN Devices: Process and Reliability
Authors:
Shuzhen You,
Karen Geens,
Matteo Borga,
Hu Liang,
Herwig Hahn,
Dirk Fahle,
Michael Heuken,
Kalparupa Mukherjee,
Carlo De Santi,
Matteo Meneghini,
Enrico Zanoni,
Martin Berg,
Peter Ramvall,
Ashutosh Kumar,
Mikael T. Björk,
B. Jonas Ohlsson,
Stefaan Decoutere
Abstract:
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path bas…
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This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density.
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Submitted 7 July, 2021; v1 submitted 6 July, 2021;
originally announced July 2021.
