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Fabrication of thin diamond membranes by Ne$^+$ implantation
Authors:
Luca Basso,
Michael Titze,
Jacob Henshaw,
Pauli Kehayias,
Rong Cong,
Maziar Saleh Ziabari,
Tzu-Ming Lu,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
Color centers in diamond are one of the most promising tools for quantum information science. Of particular interest is the use of single-crystal diamond membranes with nanoscale-thickness as hosts for color centers. Indeed, such structures guarantee a better integration with a variety of other quantum materials or devices, which can aid the development of diamond-based quantum technologies, from…
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Color centers in diamond are one of the most promising tools for quantum information science. Of particular interest is the use of single-crystal diamond membranes with nanoscale-thickness as hosts for color centers. Indeed, such structures guarantee a better integration with a variety of other quantum materials or devices, which can aid the development of diamond-based quantum technologies, from nanophotonics to quantum sensing. A common approach for membrane production is what is known as "smart-cut", a process where membranes are exfoliated from a diamond substrate after the creation of a thin sub-surface amorphous carbon layer by He$^+$ implantation. Due to the high ion fluence required, this process can be time-consuming. In this work, we demonstrated the production of thin diamond membranes by neon implantation of diamond substrates. With the target of obtaining membranes of $\sim$ 200 nm thickness and finding the critical damage threshold, we implanted different diamonds with 300 keV Ne$^+$ ions at different fluences. We characterized the structural properties of the implanted diamonds and the resulting membranes through SEM, Raman spectroscopy, and photoluminescence spectroscopy. We also found that a SRIM model based on a two-layer diamond/sp$^2$-carbon target better describes ion implantation, allowing us to estimate the diamond critical damage threshold for Ne$^+$ implantation. Compared to He$^+$ smart-cut, the use of a heavier ion like Ne$^+$ results in a ten-fold decrease in the ion fluence required to obtain diamond membranes and allows to obtain shallower smart-cuts, i.e. thinner membranes, at the same ion energy.
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Submitted 30 May, 2023;
originally announced May 2023.
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Emergent Growth of System Self-Organization & Self-Control
Authors:
Jessie Henshaw
Abstract:
In physics, I noticed subjects not explained by formulas were often not studied, like how uncontrolled growth systems changed form. Weather, businesses, societies, environments, communities, cultures, groups, relationships, lives, and livelihoods all do it following some variation of an 'S' curve. It is a slow-fast-slow process of self-animated contextual energy system development. Making working…
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In physics, I noticed subjects not explained by formulas were often not studied, like how uncontrolled growth systems changed form. Weather, businesses, societies, environments, communities, cultures, groups, relationships, lives, and livelihoods all do it following some variation of an 'S' curve. It is a slow-fast-slow process of self-animated contextual energy system development. Making working systems, they seem to develop by "find and connect" in three stages, starting small to first A) freely build designs of growing power, then B) diversify, adapt, respond, and harmonize with others, then C) take on one or more roles in their climax environments. It is a life curve of tremendous syntropic success that then ends with decline. Life is particularly risky for small start-ups, but many do succeed. Many powerful civilizations have emerged, some never growing up but growing as endless startups, only to become fragile, fail, and vanish. That looks like a choice.
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Submitted 16 May, 2023;
originally announced May 2023.
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HIKE, High Intensity Kaon Experiments at the CERN SPS
Authors:
E. Cortina Gil,
J. Jerhot,
N. Lurkin,
T. Numao,
B. Velghe,
V. W. S. Wong,
D. Bryman,
L. Bician,
Z. Hives,
T. Husek,
K. Kampf,
M. Koval,
A. T. Akmete,
R. Aliberti,
V. Büscher,
L. Di Lella,
N. Doble,
L. Peruzzo,
M. Schott,
H. Wahl,
R. Wanke,
B. Döbrich,
L. Montalto,
D. Rinaldi,
F. Dettori
, et al. (154 additional authors not shown)
Abstract:
A timely and long-term programme of kaon decay measurements at a new level of precision is presented, leveraging the capabilities of the CERN Super Proton Synchrotron (SPS). The proposed programme is firmly anchored on the experience built up studying kaon decays at the SPS over the past four decades, and includes rare processes, CP violation, dark sectors, symmetry tests and other tests of the St…
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A timely and long-term programme of kaon decay measurements at a new level of precision is presented, leveraging the capabilities of the CERN Super Proton Synchrotron (SPS). The proposed programme is firmly anchored on the experience built up studying kaon decays at the SPS over the past four decades, and includes rare processes, CP violation, dark sectors, symmetry tests and other tests of the Standard Model. The experimental programme is based on a staged approach involving experiments with charged and neutral kaon beams, as well as operation in beam-dump mode. The various phases will rely on a common infrastructure and set of detectors.
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Submitted 29 November, 2022;
originally announced November 2022.
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Holistic Natural Systems -- Design & Steering, Guiding New Science for Transformation
Authors:
Jessie Henshaw
Abstract:
Like all natural systems, great societies and their cultures emerge by a growth process from their environments, develo**, organized, and behaving as wholes with their internal designs linked with their external worlds. So the general patterns of how growth produces both successful and failing new designs for new systems can be a great teacher of what does and does not successfully work. Our own…
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Like all natural systems, great societies and their cultures emerge by a growth process from their environments, develo**, organized, and behaving as wholes with their internal designs linked with their external worlds. So the general patterns of how growth produces both successful and failing new designs for new systems can be a great teacher of what does and does not successfully work. Our own world culture imperils its survival by being unresponsive to change as our world economy has; driven to endlessly maximize its compound growth and so growing conflict with internal and external systems. New methods now let us compare different kinds of growth systems in their natural contexts to expose their different ways of coupling with their contexts and steering in response to their futures. Some work out fine by respecting internal limits and finding a fit with external parts, and so working adaptively for survival as a whole. For living systems, steering is much improved by rich experience of external contexts, allowing more prompt attention and response to new risks and opportunities. Recognizing emerging systems starts with noticing change associated with a growing center of relationships, a nucleus of activity in a nourishing place, something sprouting. Storms, trees, relationships, organisms, businesses, organizations, cultures, etc., all start as emerging centers of design that develop by capturing resources from their contexts to expand their ability to capture more. As such, growth begins and develops as a natural exploratory process, starting with compound growth and needing to creatively respond to its natural limits to achieve long life and a stable place in the world. The coupling of internal human thoughts and external worlds matters, too; however, only indirectly connected with our contexts, our fixed images of a changing world can blind us to the meanings of life.
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Submitted 14 August, 2022;
originally announced August 2022.
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Current Paths in an Atomic Precision Advanced Manufactured Device Imaged by Nitrogen-Vacancy Diamond Magnetic Microscopy
Authors:
Luca Basso,
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Heejun Byeon,
Michael P. Lilly,
Ezra Bussmann,
Deanna M. Campbell,
Shashank Misra,
Andrew M. Mounce
Abstract:
The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include wh…
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The recently-developed ability to control phosphorous-do** of silicon at an atomic level using scanning tunneling microscopy (STM), a technique known as atomic-precision-advanced-manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and map** of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this paper, we performed nitrogen-vacancy (NV) wide-field magnetic imaging of stray magnetic fields from surface current densities flowing in an APAM test device over a mm-field of view with μm-resolution. To do this, we integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current density, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A/m, corresponding to a smallest detectable current in the 200 μm-wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.
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Submitted 28 July, 2022;
originally announced July 2022.
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Understanding nature's purpose in starting all new lives with compound growth -- New science for individual systems
Authors:
Jessie Henshaw
Abstract:
We often associate compound growth with the Anthropocene and our overwhelming economic impacts on the Earth. Today our actual choices for future society appear to lie with studying the class of emergent natural systems that first develop by compound growth, called 'new lives' here, or "natural complex adaptive systems" (NCAS). The key to their success is first starting with compound growth, a syst…
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We often associate compound growth with the Anthropocene and our overwhelming economic impacts on the Earth. Today our actual choices for future society appear to lie with studying the class of emergent natural systems that first develop by compound growth, called 'new lives' here, or "natural complex adaptive systems" (NCAS). The key to their success is first starting with compound growth, a system for growing the system. Its self-organization needs to shift resources from multiplying its scale to maturing and adapting its design for its new environment, a challenging environmental coordination process.
We see that taking place in biological reproduction all the time, of course, but it all needs to occur for businesses, economies, cultures, and even for creative work and personal relationships to survive their initial periods of compound growth. Why economic growth as a process that accelerates ever faster still seems unlimited to some seems to come from representing growth as a numerical rather than organizational development process. For example, all kinds of adaptive system organization have limits to how fast they can rearrange their systems.
To understand the kinds of limits and adaptations that lead to a successful growth climax and perhaps a long creative life to follow, we combine the most notable observed milestones of successful growth found in nature, divided into 3 main development periods. Those milestones of new lives (MNL) teach us alternative paths to follow The primary milestones include 3 critical events, initiating 3 feedback periods, for 3 organizational development stages, occurring in 3 environments. Together they can be called the A, B, C, egg, nest, world, or natural growth pattern. By observing them in familiar cases, we learn the patterns that also apply in others.
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Submitted 7 February, 2022;
originally announced February 2022.
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Towards Deterministic Creation of Single Photon Sources in Diamond using In-Situ Ion Counting
Authors:
M. Titze,
H. Byeon,
A. R. Flores,
J. Henshaw,
C. T. Harris,
A. M. Mounce,
E. S. Bielejec
Abstract:
We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location…
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We present an in-situ counted ion implantation experiment reducing the error on the ion number to 5 % enabling the fabrication of high-yield single photon emitter devices in wide bandgap semiconductors for quantum applications. Typical focused ion beam implantation relies on knowing the beam current and setting a pulse length of the ion pulse to define the number of ions implanted at each location, referred to as timed implantation in this paper. This process is dominated by Poisson statistics resulting in large errors for low number of implanted ions. Instead, we use in-situ detection to measure the number of ions arriving at the substrate resulting in a two-fold reduction in the error on the number of implanted ions used to generate a single optically active silicon vacancy (SiV) defect in diamond compared to timed implantation. Additionally, through post-implantation analysis, we can further reduce the error resulting in a seven-fold improvement compared to timed implantation, allowing us to better estimate the conversion yield of implanted Si to SiV. We detect SiV emitters by photoluminescence spectroscopy, determine the number of emitters per location and calculate the yield to be 2.98 + 0.21 / - 0.24 %. Candidates for single photon emitters are investigated further by Hanbury-Brown-Twiss interferometry confirming that 82 % of the locations exhibit single photon emission statistics. This counted ion implantation technique paves the way towards deterministic creation of SiV when ion counting is used in combination with methods that improve the activation yield of SiV.
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Submitted 3 December, 2021;
originally announced December 2021.
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Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis
Authors:
P. Kehayias,
E. V. Levine,
L. Basso,
J. Henshaw,
M. Saleh Ziabari,
M. Titze,
R. Haltli,
J. Okoro,
D. R. Tibbetts,
D. M. Udoni,
E. Bielejec,
M. P. Lilly,
T. M. Lu,
P. D. D. Schwindt,
A. M. Mounce
Abstract:
Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system…
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Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system" to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we used a SPICE electronic circuit simulator and Finite Element Analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.
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Submitted 19 January, 2022; v1 submitted 23 September, 2021;
originally announced September 2021.
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A fitting algorithm for optimizing ion implantation energies and fluences
Authors:
Pauli Kehayias,
Jacob Henshaw,
Maziar Saleh Ziabari,
Michael Titze,
Edward Bielejec,
Michael P. Lilly,
Andrew M. Mounce
Abstract:
We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we…
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We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $μ$m surface layers of $^{15}$N or vacancies (using $^4$He).
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Submitted 27 May, 2021; v1 submitted 3 March, 2021;
originally announced March 2021.
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The systemic growth constants of climate change: From its origin in 1780 to its major post-WWII acceleration
Authors:
Jessie Lydia Henshaw
Abstract:
The recent discovery of long term growth constants in the accumulation of atmospheric CO2, confirmed by two methods, enables analog methods for dating the beginning of climate change at ~1780 and projecting its near term future. Here we show that the preceding wavy variation in CO2 PPM abruptly shifts to exponential, moving symmetrically around a growth constant of 1.48 %/yr until WWII, and after…
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The recent discovery of long term growth constants in the accumulation of atmospheric CO2, confirmed by two methods, enables analog methods for dating the beginning of climate change at ~1780 and projecting its near term future. Here we show that the preceding wavy variation in CO2 PPM abruptly shifts to exponential, moving symmetrically around a growth constant of 1.48 %/yr until WWII, and after a pause rises to hover about a higher constant growth constant from 1960 on of 2.0 %/yr. Such long term steady states of global environmental change suggest transitions between stable states of global self-organization. A method of analog curve fitting to project the current steady state of acceleration is tested, suggesting a 2040 earth temperature rise of 1.89 deg C above the IPCC baseline. A very brief following discussion of what a systemic growth constant for atmospheric CO2 implies and model strategies for responding to it.
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Submitted 8 November, 2019;
originally announced November 2019.
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The challenges for Systems Engineers of non-classical quantum technologies
Authors:
Michael J. de C. Henshaw,
Mark J. Everitt,
Vincent M. Dwyer,
Jack Lemon,
Susannah C. Jones
Abstract:
Non-classical quantum technologies that rely on manipulation of quantum states and exploitation of quantum superposition and entanglement are approaching a level of maturity sufficient to contemplate commercialization as the basis of practical devices for sensing, communications, navigation and other applications in the relatively near-term. However, realization of such technologies is dependent u…
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Non-classical quantum technologies that rely on manipulation of quantum states and exploitation of quantum superposition and entanglement are approaching a level of maturity sufficient to contemplate commercialization as the basis of practical devices for sensing, communications, navigation and other applications in the relatively near-term. However, realization of such technologies is dependent upon the development of appropriate Quantum Systems Engineering (QSE) approaches. It is clear that whilst traditional systems engineering will support much of the integration need, there are aspects associated with system of interest definition, system modelling, and system verification where substantial advances in the systems engineering approach are required. This paper lays out in detail the challenges associated with Quantum Enabled Systems and Technologies (QEST) and analyses the adequacy of systems engineering processes and tools, as defined by the Systems and Software Engineering lifecycle standard (ISO/IEC/IEEE 15288), to meet these challenges. The conclusions of this paper provide an outline agenda for systems research in order to engineer QEST.
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Submitted 11 December, 2017; v1 submitted 16 October, 2017;
originally announced October 2017.
