Showing 1–17 of 17 results for author: Heinz, T F

Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

Authors: Zhepeng Zhang, Lauren Hoang, Marisa Hocking, Jenny Hu, Gregory Zaborski Jr., Pooja Reddy, Johnny Dollard, David Goldhaber-Gordon, Tony F. Heinz, Eric Pop, Andrew J. Mannix

Abstract: Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, do**, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly cry… ▽ More Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, do**, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled do**. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale. △ Less

Submitted 6 March, 2024; originally announced March 2024.

Millimeter-scale exfoliation of hBN with tunable flake thickness

Authors: Amy S. McKeown-Green, Helen J. Zeng, Ashley P. Saunders, Jiayi Li, Jenny Hu, Jiaojian Shi, Yuejun Shen, Feng Pan, Jennifer A. Dionne, Tony F. Heinz, Stephen Wu, Fan Zheng, Fang Liu

Abstract: As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-fi… ▽ More As a two-dimensional (2D) dielectric material, hexagonal boron nitride (hBN) is in high demand for applications in photonics, nonlinear optics, and nanoelectronics. Unfortunately, the high-throughput preparation of macroscopic-scale, high-quality hBN flakes with controlled thickness is an ongoing challenge, limiting device fabrication and technological integration. Here, we present a metal thin-film exfoliation method to prepare hBN flakes with millimeter-scale dimension, near-unity yields, and tunable flake thickness distribution from 1-7 layers, a substantial improvement over scotch tape exfoliation. The single crystallinity and high quality of the exfoliated hBN are demonstrated with optical microscopy, atomic force microscopy, Raman spectroscopy, and second harmonic generation. We further explore a possible mechanism for the effectiveness and selectivity based on thin-film residual stress measurements, density functional theory calculations, and transmission electron microscopy imaging of the deposited metal films. We find that the magnitude of the residual tensile stress induced by thin film deposition plays a key role in determining exfoliated flake thickness in a manner which closely resembles 3D semiconductor spalling. Lastly, we demonstrate that our exfoliated, large-area hBN flakes can be readily incorporated as encapsulating layers for other 2D monolayers. Altogether, this method brings us one step closer to the high throughput, mass production of hBN-based 2D photonic, optoelectronic, and quantum devices. △ Less

Submitted 2 November, 2023; originally announced November 2023.

Comments: 21 pages, 5 figures, work completed at Stanford University

Achiral dielectric metasurfaces for spectral and polarization control of valley specific light emission from monolayer MoS2

Authors: Yin Liu, Sze Cheung Lau, Wen-Hui Sophia Cheng, Amalya Johnson, Qitong Li, Emma Simmerman, Ouri Karni, Jack Hu, Fang Liu, Mark L. Brongersma, Tony F. Heinz, Jennifer A. Dionne

Abstract: Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically accessed and manipulated for quantum information processing. Here, we integrate MoS2 with achiral silicon disk array metasurfaces to enhance and control valley-specific absorption and emission. Through the coupling to the metasurface Mie modes, the intensity and lifetime of the emissi… ▽ More Excitons in two-dimensional transition metal dichalcogenides have a valley degree of freedom that can be optically accessed and manipulated for quantum information processing. Here, we integrate MoS2 with achiral silicon disk array metasurfaces to enhance and control valley-specific absorption and emission. Through the coupling to the metasurface Mie modes, the intensity and lifetime of the emission of neutral excitons, trions and defect bound excitons can be enhanced, while the spectral shape can be modified. Additionally, we demonstrate the symmetric enhancement of the degree-of-polarization (DOP) of neutral exciton and trions via valley-resolved PL measurements, and find that the DOP can be as high as 24% for exciton emission and 34% for trion emission at 100K. These results can be understood by analyzing the near-field impact of metasurface resonators on both the chiral absorption of MoS2 emitters as well as the enhanced emission from the Purcell effect. Combining Si-compatible photonic design with large-scale (mm-scale) 2D materials integration, our work makes an important step towards on-chip valleytronic applications approaching room-temperature operation. △ Less

Submitted 5 June, 2023; v1 submitted 18 December, 2022; originally announced December 2022.

High-harmonic generation from artificially stacked 2D crystals

Authors: Christian Heide, Yuki Kobayashi, Amalya C. Johnson, Tony F. Heinz, David A. Reis, Fang Liu, Shambhu Ghimire

Abstract: We report a coherent layer-by-layer high-order harmonic generation (HHG) build-up in artificially stacked transition metal dichalcogenides (TMDC) crystals in their various stacking configurations. In the experiments, millimeter-sized single crystalline monolayers are synthesized using the gold foil-exfoliation method, followed by artificially stacking on a transparent substrate. High-order harmoni… ▽ More We report a coherent layer-by-layer high-order harmonic generation (HHG) build-up in artificially stacked transition metal dichalcogenides (TMDC) crystals in their various stacking configurations. In the experiments, millimeter-sized single crystalline monolayers are synthesized using the gold foil-exfoliation method, followed by artificially stacking on a transparent substrate. High-order harmonics up to the 19th order are generated by the interaction with an ultrafast mid-infrared (MIR) driving laser. We find that the generation is sensitive to the number of layers and their relative orientation. For AAAA stacking configuration, both odd- and even-orders exhibit a quadratic increase in intensity as a function of the number of layers, which is a signature of constructive interference of high-harmonic emission from successive layers. Particularly, we observe some deviations from this scaling at photon energies above the bandgap, which is explained by self-absorption effects. For AB and ABAB stacking, even-order harmonics remain below the detection level, consistent with the presence of inversion symmetry. Our study confirms the capability of producing non-perturbative high-order harmonics from stacked layered materials subjected to intense MIR fields without damaging samples. It has implications for optimizing solid-state HHG sources at the nano-scale and develo** high-harmonics as an ultrafast probe of artificially stacked layered materials. Because the HHG process is a strong-field driven process, it has the potential to probe high-momentum and energy states in the bandstructure combined with atomic-scale sensitivity in real space, making it an attractive probe of novel material structures such as the Moiré pattern. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Atom-Specific Probing of Electron Dynamics in an Atomic Adsorbate by Time-Resolved X-ray Spectroscopy

Authors: Simon Schreck, Elias Diesen, Martina Dell'Angela, Chang Liu, Matthew Weston, Flavio Capotondi, Hirohito Ogasawara, Jerry LaRue, Roberto Costantini, Martin Beye, Piter S. Miedema, Joakim Halldin Stenlid, Jörgen Gladh, Boyang Liu, Hsin-Yi Wang, Fivos Perakis, Filippo Cavalca, Sergey Koroidov, Peter Amann, Emanuele Pedersoli, Denys Naumenko, Ivaylo Nikolov, Lorenzo Raimondi, Frank Abild-Pedersen, Tony F. Heinz , et al. (3 additional authors not shown)

Abstract: The electronic excitation occurring on adsorbates at ultrafast time scales from optical lasers that initiate surface chemical reactions is still an open question. Here, we report the ultrafast temporal evolution of X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) of a simple well known adsorbate prototype system, namely carbon (C) atoms adsorbed on a nickel (Ni(100)) surfa… ▽ More The electronic excitation occurring on adsorbates at ultrafast time scales from optical lasers that initiate surface chemical reactions is still an open question. Here, we report the ultrafast temporal evolution of X-ray absorption spectroscopy (XAS) and X-ray emission spectroscopy (XES) of a simple well known adsorbate prototype system, namely carbon (C) atoms adsorbed on a nickel (Ni(100)) surface, following intense laser optical pum** at 400 nm. We observe ultrafast (~100 fs) changes in both XAS and XES showing clear signatures of the formation of a hot electron-hole pair distribution on the adsorbate. This is followed by slower changes on a few ps time scale, shown to be consistent with thermalization of the complete C/Ni system. Density functional theory spectrum simulations support this interpretation. △ Less

Submitted 1 November, 2022; originally announced November 2022.

Comments: 33 pages, 12 figures. Submitted to Physical Review Letters

Ultrahigh quality infrared polaritonic resonators based on bottom-up-synthesized van der Waals nanoribbons

Authors: Shang-Jie Yu, Yue Jiang, John A. Roberts, Markus A. Huber, Helen Yao, Xinjian Shi, Hans A. Bechtel, Stephanie N. Gilbert Corder, Tony F. Heinz, Xiaolin Zheng, Jonathan A. Fan

Abstract: van der Waals nanomaterials supporting phonon polariton quasiparticles possess unprecedented light confinement capabilities, making them ideal systems for molecular sensing, thermal emission, and subwavelength imaging applications, but they require defect-free crystallinity and nanostructured form factors to fully showcase these capabilities. We introduce bottom-up-synthesized α-MoO3 structures as… ▽ More van der Waals nanomaterials supporting phonon polariton quasiparticles possess unprecedented light confinement capabilities, making them ideal systems for molecular sensing, thermal emission, and subwavelength imaging applications, but they require defect-free crystallinity and nanostructured form factors to fully showcase these capabilities. We introduce bottom-up-synthesized α-MoO3 structures as nanoscale phonon polaritonic systems that feature tailorable morphologies and crystal qualities consistent with bulk single crystals. α-MoO3 nanoribbons serve as low-loss hyperbolic Fabry-Pérot nanoresonators, and we experimentally map hyperbolic resonances over four Reststrahlen bands spanning the far- and mid-infrared spectral range, including resonance modes beyond the tenth order. The measured quality factors are the highest from phonon polaritonic van der Waals structures to date. We anticipate that bottom-up-synthesized polaritonic van der Waals nanostructures will serve as an enabling high-performance and low-loss platform for infrared optical and optoelectronic applications. △ Less

Submitted 10 January, 2022; originally announced January 2022.

All-optical probe of three-dimensional topological insulators based on high-harmonic generation by circularly-polarized laser fields

Authors: Denitsa Baykusheva, Alexis Chacón, Jian Lu, Trevor P. Bailey, Jonathan A. Sobota, Hadas Soifer, Patrick S. Kirchmann, Costel R. Rotundu, Ctirad Uher, Tony F. Heinz, David A. Reis, Shambhu Ghimire

Abstract: We report the observation of a novel nonlinear optical response from the prototypical three-dimensional topological insulator Bi$_2$Se$_3$ through the process of high-order harmonic generation. We find that the generation efficiency increases as the laser polarization is changed from linear to elliptical, and it becomes maximum for circular polarization. With the aid of a microscopic theory and a… ▽ More We report the observation of a novel nonlinear optical response from the prototypical three-dimensional topological insulator Bi$_2$Se$_3$ through the process of high-order harmonic generation. We find that the generation efficiency increases as the laser polarization is changed from linear to elliptical, and it becomes maximum for circular polarization. With the aid of a microscopic theory and a detailed analysis of the measured spectra, we reveal that such anomalous enhancement encodes the characteristic topology of the band structure that originates from the interplay of strong spin-orbit coupling and time-reversal symmetry protection. Our study reveals a new platform for chiral strong-field physics and presents a novel, contact-free, all-optical approach for the spectroscopy of topological insulators. The implications are in ultrafast probing of topological phase transitions, light-field driven dissipationless electronics, and quantum computation. △ Less

Submitted 30 September, 2021; originally announced September 2021.

Comments: 21 pages, 5 figures

Journal ref: Nano Lett. 2021, 21, 21, 8970-8978

Probing Electron-Hole Coherence in Strongly-Driven Solids

Authors: Christian Heide, Yuki Kobayashi, Amalya Johnson, Fang Liu, Tony F. Heinz, David A. Reis, Shambhu Ghimire

Abstract: High-harmonic generation (HHG) is a coherent optical process in which the incident photon energy is up-converted to the multiples of its initial energy. In solids, under the influence of a strong laser field, electron-hole (e-h) pairs are generated and subsequently driven to high energy and momentum within a fraction of the optical cycle. These dynamics encode the band structure, including non-tri… ▽ More High-harmonic generation (HHG) is a coherent optical process in which the incident photon energy is up-converted to the multiples of its initial energy. In solids, under the influence of a strong laser field, electron-hole (e-h) pairs are generated and subsequently driven to high energy and momentum within a fraction of the optical cycle. These dynamics encode the band structure, including non-trivial topological properties of the source material, through both intraband current and interband polarization, into the high harmonic spectrum. In the course of this process, dephasing between the driven electron and the hole can significantly reduce the HHG efficiency. Here, we exploit this feature and turn it into a measurement of e-h coherence in strongly driven solids. Utilizing a pre-pump pulse, we first photodope monolayer molybdenum disulfide and then examine the HHG induced by an intense infrared pulse. We observe clear suppression of the HH intensity, which becomes more pronounced with increasing order. Based on quantum simulations, we attribute this monotonic order dependence as a signature of ultrafast electron-hole dephasing, which leads to an exponential decay of the inter-band polarization, proportional to the sub-cycle excursion time of the e-h pair. Our results demonstrate the importance of many-body effects, such as density-dependent decoherence in HHG and provide a novel platform to probe electron-hole coherence in strongly driven systems. △ Less

Submitted 9 September, 2021; originally announced September 2021.

Moiré-localized interlayer exciton wavefunctions captured by imaging its electron and hole constituents

Authors: Ouri Karni, Elyse Barré, Vivek Pareek, Johnathan D. Georgaras, Michael K. L. Man, Chakradhar Sahoo, David R. Bacon, Xing Zhu, Henrique B. Ribeiro, Aidan L. O'Beirne, Jenny Hu, Abdullah Al-Mahboob, Mohamed M. M. Abdelrasoul, Nicholas S. Chan, Arka Karmakar, Andrew J. Winchester, Bumho Kim, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, Julien Madéo, Felipe H. da Jornada, Tony F. Heinz, Keshav M. Dani

Abstract: Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation, single-photon emission and other quantum-information applications. Yet, despite extensive optical spectroscopic investigations, critical information about their size, valley configuration and the influence of the moiré potent… ▽ More Interlayer excitons (ILXs) - electron-hole pairs bound across two atomically thin layered semiconductors - have emerged as attractive platforms to study exciton condensation, single-photon emission and other quantum-information applications. Yet, despite extensive optical spectroscopic investigations, critical information about their size, valley configuration and the influence of the moiré potential remains unknown. Here, we captured images of the time- and momentum-resolved distribution of both the electron and the hole that bind to form the ILX in a WSe2/MoS2 heterostructure. We thereby obtain a direct measurement of the interlayer exciton diameter of ~5.4 nm, comparable to the moiré unit-cell length of 6.1 nm. Surprisingly, this large ILX is well localized within the moiré cell to a region of only 1.8 nm - smaller than the size of the exciton itself. This high degree of localization of the interlayer exciton is backed by Bethe-Salpeter equation calculations and demonstrates that the ILX can be localized within small moiré unit cells. Unlike large moiré cells, these are uniform over large regions, thus allowing the formation of extended arrays of localized excitations for quantum technology. △ Less

Submitted 4 August, 2021; originally announced August 2021.

Comments: 4 figures

Ultrafast adsorbate excitation probed with sub-ps resolution XAS

Authors: Elias Diesen, Hsin-Yi Wang, Simon Schreck, Matthew Weston, Hirohito Ogasawara, Jerry LaRue, Fivos Perakis, Martina Dell'Angela, Flavio Capotondi, Luca Giannessi, Emanuele Pedersoli, Denys Naumenko, Ivaylo Nikolov, Lorenzo Raimondi, Carlo Spezzani, Martin Beye, Filippo Cavalca, Boyang Liu, Jörgen Gladh, Sergey Koroidov, Piter S. Miedema, Roberto Costantini, Tony F. Heinz, Frank Abild-Pedersen, Johannes Voss , et al. (2 additional authors not shown)

Abstract: We use a pump-probe scheme to measure the time evolution of the C K-edge X-ray absorption spectrum (XAS) from CO/Ru(0001) after excitation by an ultrashort high-intensity optical laser pulse. Due to the short duration of the X-ray probe pulse and precise control of the pulse delay, the excitation-induced dynamics during the first ps after the pump can be resolved with unprecedented time resolution… ▽ More We use a pump-probe scheme to measure the time evolution of the C K-edge X-ray absorption spectrum (XAS) from CO/Ru(0001) after excitation by an ultrashort high-intensity optical laser pulse. Due to the short duration of the X-ray probe pulse and precise control of the pulse delay, the excitation-induced dynamics during the first ps after the pump can be resolved with unprecedented time resolution. By comparing with theoretical (DFT) spectrum calculations we find high excitation of the internal stretch and frustrated rotation modes occurring within 200 fs of laser excitation, as well as thermalization of the system in the ps regime. The ~100 fs initial excitation of these CO vibrational modes is not readily rationalized by traditional theories of nonadiabatic coupling of adsorbates to metal surfaces, e. g. electronic frictions based on first order electron-phonon coupling or transient population of adsorbate resonances. We suggest that coupling of the adsorbate to non-thermalized electron-hole pairs is responsible for the ultrafast initial excitation of the modes. △ Less

Submitted 7 June, 2021; originally announced June 2021.

Comments: 16 pages, 16 figures. To be published in Physical Review Letters: https://journals.aps.org/prl/accepted/c1070Y74M8b18063d9cd0221b000631d50ef7a249

Journal ref: Phys. Rev. Lett. 127, 016802 (2021)

Rigid band shifts in two-dimensional semiconductors through environmental screening

Authors: Lutz Waldecker, Archana Raja, Malte Rösner, Christina Steinke, Aaron Bostwick, Roland J. Koch, Chris Jozwiak, Takashi Taniguchi, Kenji Watanabe, Eli Rotenberg, Tim O. Wehling, Tony F. Heinz

Abstract: We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased environmental screening to be a reduction of the band gap, with… ▽ More We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS$_2$ using correlative angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased environmental screening to be a reduction of the band gap, with little change to the electronic dispersion of the band structure. These essentially rigid shifts of the bands results from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment in the 2D limit. Our results suggest dielectric engineering as a non-invasive method of tailoring the band structure of 2D semiconductors and provide guidance for understanding the electronic properties of 2D materials embedded in multilayer heterostructures. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 123, 206403 (2019)

Optical models for thin layers

Authors: Yilei Li, Tony F. Heinz

Abstract: We provide a systematic study of the optical models for thin layers: the 3D model, the 2D model and the linearized 2D model. We show that the 2D model is applicable for layers with small optical thicknesses. Excellent agreement of the 2D model with the 3D model is demonstrated over broad spectral ranges from DC to near UV for representative van der Waals atomic layers and thin metal layers. The li… ▽ More We provide a systematic study of the optical models for thin layers: the 3D model, the 2D model and the linearized 2D model. We show that the 2D model is applicable for layers with small optical thicknesses. Excellent agreement of the 2D model with the 3D model is demonstrated over broad spectral ranges from DC to near UV for representative van der Waals atomic layers and thin metal layers. The linearized 2D model requires additionally weak optical response. Analytical expressions for the applicability and accuracies of the optical models are derived. We discuss the advantages and limitations of the models for the purpose of measuring their optical response functions. Further, we generalize the theory to take into account in-plane anisotropy, heterostructures, and stratified substrates. Implications of the 2D model for the correct analysis of transmission attenuation and implementations of half- and total-absorption layers are discussed. △ Less

Submitted 1 January, 2018; originally announced January 2018.

Ultrafast Graphene Light Emitter

Authors: Young Duck Kim, Yuanda Gao, Ren-Jye Shiue, Lei Wang, Ozgur Burak Aslan, Myung-Ho Bae, Hyungsik Kim, Dongjea Seo, Heon-** Choi, Suk Hyun Kim, Andrei Nemilentsau, Tony Low, Cheng Tan, Dmitri K. Efetov, Takashi Taniguchi, Kenji Watanabe, Kenneth L. Shepard, Tony F. Heinz, Dirk Englund, James Hone

Abstract: Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achie… ▽ More Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications. △ Less

Submitted 24 October, 2017; originally announced October 2017.

Comments: 18 pages, 4 figures

Photonic and plasmonic guiding modes in graphene-silicon photonic crystals

Authors: Tingyi Gu, Andrei Andryieuski, Yufeng Hao, Yilei Li, James Hone, Chee Wei Wong, Andrei Lavrinenko, Tony Low, Tony F. Heinz

Abstract: We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into four distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By… ▽ More We report systematic studies of plasmonic and photonic guiding modes in large-area chemical-vapor-deposition-grown graphene on nanostructured silicon substrates. Light interaction in graphene with substrate photonic crystals can be classified into four distinct regimes depending on the photonic crystal lattice constant and the various modal wavelengths (i.e. plasmonic, photonic and free-space). By optimizing the design of the substrate, these resonant modes can magnify the graphene absorption in infrared wavelength, for efficient modulators, filters, sensors and photodetectors on silicon photonic platforms. △ Less

Submitted 19 April, 2015; originally announced April 2015.

Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity

Authors: Xuetao Gan, Yuanda Gao, Kin Fai Mak, Xinwen Yao, Ren-Jye Shiue, Arend van der Zande, Matthew Trusheim, Fariba Hatami, Tony F. Heinz, James Hone, Dirk Englund

Abstract: We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) map** shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization d… ▽ More We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) map** shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS$_2$ emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS$_2$ SE rate exceeding a factor of 70. △ Less

Submitted 3 October, 2013; originally announced October 2013.

Comments: 8 pages, 3 figures

High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene

Authors: Xuetao Gan, Ren-Jye Shiue, Yuanda Gao, Kin Fai Mak, Xinwen Yao, Luozhou Li, Attila Szep, Dennis Walker Jr., James Hone, Tony F. Heinz, Dirk Englund

Abstract: We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modu… ▽ More We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modulation of the cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. We also observe a controllable resonance wavelength shift close to 2 nm around a wavelength of 1570 nm and a Q factor modulation in excess of three. These observations allow cavity-enhanced measurements of the graphene complex dielectric constant under different chemical potentials, in agreement with a theoretical model of the graphene dielectric constant under gating. This graphene-based nanocavity modulation demonstrates the feasibility of high-contrast, low-power frequency-selective electro-optic nanocavity modulators in graphene-integrated silicon photonic chips. △ Less

Submitted 2 November, 2012; originally announced November 2012.

Comments: 9 pages, 4 figures

Energy Transfer from Individual Semiconductor Nanocrystals to Graphene

Authors: Zheyuan Chen, Stéphane Berciaud, Colin Nuckolls, Tony F. Heinz, Louis E. Brus

Abstract: Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/Z… ▽ More Energy transfer from photoexcited zero-dimensional systems to metallic systems plays a prominent role in modern day materials science. A situation of particular interest concerns the interaction between a photoexcited dipole and an atomically thin metal. The recent discovery of graphene layers permits investigation of this phenomenon. Here we report a study of fluorescence from individual CdSe/ZnS nanocrystals in contact with single- and few-layer graphene sheets. The rate of energy transfer is determined from the strong quenching of the nanocrystal fluorescence. For single-layer graphene, we find a rate of ~ 4ns-1, in agreement with a model based on the dipole approximation and a tight-binding description of graphene. This rate increases significantly with the number of graphene layers, before approaching the bulk limit. Our study quantifies energy transfer to and fluorescence quenching by graphene, critical properties for novel applications in photovoltaic devices and as a molecular ruler. △ Less

Submitted 15 March, 2010; originally announced March 2010.

Journal ref: ACS Nano 4, 2964 (2010)