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Fault Localization in a Microfabricated Surface Ion Trap using Diamond Nitrogen-Vacancy Center Magnetometry
Authors:
Pauli Kehayias,
Matthew A. Delaney,
Raymond A. Haltli,
Susan M. Clark,
Melissa C. Revelle,
Andrew M. Mounce
Abstract:
As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hu…
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As quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred with likely integrated-photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy (NV) centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared to intentionally-created faults, finding that the root-cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.
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Submitted 13 March, 2024;
originally announced March 2024.
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Multi-junction surface ion trap for quantum computing
Authors:
J. D. Sterk,
M. G. Blain,
M. Delaney,
R. Haltli,
E. Heller,
A. L. Holterhoff,
T. Jennings,
N. Jimenez,
A. Kozhanov,
Z. Meinelt,
E. Ou,
J. Van Der Wall,
C. Noel,
D. Stick
Abstract:
Surface ion traps with two-dimensional layouts of trap** regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport,…
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Surface ion traps with two-dimensional layouts of trap** regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport, and ion control and detection with integrated photonics. Here we demonstrate a trap that addresses the scaling challenge of increasing power dissipation as the RF electrode increases in size. By raising the RF electrode and removing most of the insulating dielectric layer below it we reduce both ohmic and dielectric power dissipation. We also measure heating rates across a range of motional frequencies and for different voltage sources in a trap with a raised RF electrode but solid dielectric.
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Submitted 29 February, 2024;
originally announced March 2024.
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Mitigating the Effects of Au-Al Intermetallic Compounds Due to High-Temperature Processing of Surface Electrode Ion Traps
Authors:
Raymond A. Haltli,
Eric Ou,
Christopher D. Nordquist,
Susan M. Clark,
Melissa C. Revelle
Abstract:
Stringent physical requirements need to be met for the high performing surface-electrode ion traps used in quantum computing, sensing, and timekee**. In particular, these traps must survive a high temperature environment for vacuum chamber preparation and support high voltage rf on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wir…
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Stringent physical requirements need to be met for the high performing surface-electrode ion traps used in quantum computing, sensing, and timekee**. In particular, these traps must survive a high temperature environment for vacuum chamber preparation and support high voltage rf on closely spaced electrodes. Due to the use of gold wire bonds on aluminum pads, intermetallic growth can lead to wire bond failure via breakage or high resistance, limiting the lifetime of a trap assembly to a single multi-day bake at 200$^{\circ}$C. Using traditional thick metal stacks to prevent intermetallic growth, however, can result in trap failure due to rf breakdown events. Through high temperature experiments we conclude that an ideal metal stack for ion traps is Ti20nm/Pt100nm/Au250nm which allows for a bakeable time of roughly 86 days without compromising the trap voltage performance. This increase in the bakable lifetime of ion traps will remove the need to discard otherwise functional ion traps when vacuum hardware is upgraded, which will greatly benefit ion trap experiments.
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Submitted 19 February, 2024;
originally announced February 2024.
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In situ detection of RF breakdown on microfabricated surface ion traps
Authors:
Joshua M. Wilson,
Julia N. Tilles,
Raymond A. Haltli,
Eric Ou,
Matthew G. Blain,
Susan M. Clark,
Melissa C. Revelle
Abstract:
Microfabricated surface ion traps are a principle component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased too much, the devices can experience damaging electric discharge events…
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Microfabricated surface ion traps are a principle component of many ion-based quantum information science platforms. The operational parameters of these devices are pushed to the edge of their physical capabilities as the experiments strive for increasing performance. When the applied radio-frequency (RF) voltage is increased too much, the devices can experience damaging electric discharge events known as RF breakdown. We introduce two novel techniques for in situ detection of RF breakdown, which we implemented while characterizing the breakdown threshold of surface ion traps produced at Sandia National Laboratories. In these traps, breakdown did not always occur immediately after increasing the RF voltage, but often minutes or even hours later. This result is surprising in the context of the suggested mechanisms for RF breakdown in vacuum. Additionally, the extent of visible damage caused by breakdown events increased with applied voltage. To minimize the probability for damage when RF power is first applied to a device, our results strongly suggest that the voltage should be ramped up over the course of several hours and monitored forbreakdown.
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Submitted 17 December, 2021;
originally announced December 2021.
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Measurement and Simulation of the Magnetic Fields from a 555 Timer Integrated Circuit using a Quantum Diamond Microscope and Finite Element Analysis
Authors:
P. Kehayias,
E. V. Levine,
L. Basso,
J. Henshaw,
M. Saleh Ziabari,
M. Titze,
R. Haltli,
J. Okoro,
D. R. Tibbetts,
D. M. Udoni,
E. Bielejec,
M. P. Lilly,
T. M. Lu,
P. D. D. Schwindt,
A. M. Mounce
Abstract:
Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system…
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Quantum Diamond Microscope (QDM) magnetic field imaging is an emerging interrogation and diagnostic technique for integrated circuits (ICs). To date, the ICs measured with a QDM were either too complex for us to predict the expected magnetic fields and benchmark the QDM performance, or were too simple to be relevant to the IC community. In this paper, we establish a 555 timer IC as a "model system" to optimize QDM measurement implementation, benchmark performance, and assess IC device functionality. To validate the magnetic field images taken with a QDM, we used a SPICE electronic circuit simulator and Finite Element Analysis (FEA) to model the magnetic fields from the 555 die for two functional states. We compare the advantages and the results of three IC-diamond measurement methods, confirm that the measured and simulated magnetic images are consistent, identify the magnetic signatures of current paths within the device, and discuss using this model system to advance QDM magnetic imaging as an IC diagnostic tool.
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Submitted 19 January, 2022; v1 submitted 23 September, 2021;
originally announced September 2021.
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Assembling a ring-shaped crystal in a microfabricated surface ion trap
Authors:
Boyan Tabakov,
Francisco Benito,
Matthew Blain,
Craig R. Clark,
Susan Clark,
Raymond A. Haltli,
Peter Maunz,
Jonathan D. Sterk,
Chris Tigges,
Daniel Stick
Abstract:
We report on experiments with a microfabricated surface trap designed for trap** a chain of ions in a ring. Uniform ion separation over most of the ring is achieved with a rotationally symmetric design and by measuring and suppressing undesired electric fields. After minimizing these fields the ions are confined primarily by an rf trap** pseudo-potential and their mutual Coulomb repulsion. The…
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We report on experiments with a microfabricated surface trap designed for trap** a chain of ions in a ring. Uniform ion separation over most of the ring is achieved with a rotationally symmetric design and by measuring and suppressing undesired electric fields. After minimizing these fields the ions are confined primarily by an rf trap** pseudo-potential and their mutual Coulomb repulsion. The ring-shaped crystal consists of approximately 400 Ca$^+$ ions with an estimated average separation of 9 $μm$.
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Submitted 26 January, 2015;
originally announced January 2015.
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Design, Fabrication, and Experimental Demonstration of Junction Surface Ion Traps
Authors:
D. L. Moehring,
C. Highstrete,
D. Stick,
K. M. Fortier,
R. Haltli,
C. Tigges,
M. G. Blain
Abstract:
We present the design, fabrication, and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear segments. We experimentally demonstrate robust linear and junction shuttling with greater than one million round-trip shuttles without ion loss. By min…
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We present the design, fabrication, and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear segments. We experimentally demonstrate robust linear and junction shuttling with greater than one million round-trip shuttles without ion loss. By minimizing the direct line of sight between trapped ions and dielectric surfaces, negligible day-to-day and trap-to-trap variations are observed. In addition to high-fidelity single-ion shuttling, multiple-ion chains survive splitting, ion-position swap**, and recombining routines. The development of two-dimensional trap** structures is an important milestone for ion-trap quantum computing and quantum simulations.
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Submitted 9 May, 2011;
originally announced May 2011.
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Integration of fluorescence collection optics with a microfabricated surface electrode ion trap
Authors:
Gregory R. Brady,
A. Robert Ellis,
David L. Moehring,
Daniel Stick,
Clark Highstrete,
Kevin M. Fortier,
Matthew G. Blain,
Raymond A. Haltli,
Alvaro A. Cruz-Cabrera,
Ronald D. Briggs,
Joel R. Wendt,
Tony R. Carter,
Sally Samora,
Shanalyn A. Kemme
Abstract:
We have successfully demonstrated an integrated optical system for collecting the fluorescence from a trapped ion. The system, consisting of an array of transmissive, dielectric micro-optics and an optical fiber array, has been intimately incorporated into the ion-trap** chip without negatively impacting trap** performance. Epoxies, vacuum feedthrough, and optical component materials were care…
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We have successfully demonstrated an integrated optical system for collecting the fluorescence from a trapped ion. The system, consisting of an array of transmissive, dielectric micro-optics and an optical fiber array, has been intimately incorporated into the ion-trap** chip without negatively impacting trap** performance. Epoxies, vacuum feedthrough, and optical component materials were carefully chosen so that they did not degrade the vacuum environment, and we have demonstrated light detection as well as ion trap** and shuttling behavior comparable to trap** chips without integrated optics, with no modification to the control voltages of the trap** chip.
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Submitted 23 September, 2010; v1 submitted 17 August, 2010;
originally announced August 2010.
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Demonstration of a microfabricated surface electrode ion trap
Authors:
D Stick,
K M Fortier,
R Haltli,
C Highstrete,
D L Moehring,
C Tigges,
M G Blain
Abstract:
In this paper we present the design, modeling, and experimental testing of surface electrode ion traps fabricated in a heterostructure configuration comprising a silicon substrate, silicon dioxide insulators, and aluminum electrodes. This linear trap has a geometry with symmetric RF leads, two interior DC electrodes, and 40 individual lateral DC electrodes. Plasma enhanced chemical vapor depositio…
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In this paper we present the design, modeling, and experimental testing of surface electrode ion traps fabricated in a heterostructure configuration comprising a silicon substrate, silicon dioxide insulators, and aluminum electrodes. This linear trap has a geometry with symmetric RF leads, two interior DC electrodes, and 40 individual lateral DC electrodes. Plasma enhanced chemical vapor deposition (PECVD) was used to grow silicon dioxide pillars to electrically separate overhung aluminum electrodes from an aluminum ground plane. In addition to fabrication, we report techniques for modeling the control voltage solutions and the successful demonstration of trap** and shuttling ions in two identically constructed traps.
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Submitted 16 November, 2010; v1 submitted 5 August, 2010;
originally announced August 2010.
