Altermagnetic lifting of Kramers spin degeneracy
Authors:
J. Krempaský,
L. Šmejkal,
S. W. D'Souza,
M. Hajlaoui,
G. Springholz,
K. Uhlířová,
F. Alarab,
P. C. Constantinou,
V. Strokov,
D. Usanov,
W. R. Pudelko,
R. González-Hernández,
A. Birk Hellenes,
Z. Jansa,
H. Reichlová,
Z. Šobáň,
R. D. Gonzalez Betancourt,
P. Wadley,
J. Sinova,
D. Kriegner,
J. Minár,
J. H. Dil,
T. Jungwirth
Abstract:
Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal…
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Lifted Kramers spin-degeneracy has been among the central topics of condensed-matter physics since the dawn of the band theory of solids. It underpins established practical applications as well as current frontier research, ranging from magnetic-memory technology to topological quantum matter. Traditionally, lifted Kramers spin-degeneracy has been considered to originate from two possible internal symmetry-breaking mechanisms. The first one refers to time-reversal symmetry breaking by magnetization of ferromagnets, and tends to be strong due to the non-relativistic exchange-coupling origin. The second mechanism applies to crystals with broken inversion symmetry, and tends to be comparatively weaker as it originates from the relativistic spin-orbit coupling. A recent theory work based on spin-symmetry classification has identified an unconventional magnetic phase, dubbed altermagnetic, that allows for lifting the Kramers spin degeneracy without net magnetization and inversion-symmetry breaking. Here we provide the confirmation using photoemission spectroscopy and ab initio calculations. We identify two distinct unconventional mechanisms of lifted Kramers spin degeneracy generated by the altermagnetic phase of centrosymmetric MnTe with vanishing net magnetization. Our observation of the altermagnetic lifting of the Kramers spin degeneracy can have broad consequences in magnetism. It motivates exploration and exploitation of the unconventional nature of this magnetic phase in an extended family of materials, ranging from insulators and semiconductors to metals and superconductors, that have been either identified recently or perceived for many decades as conventional antiferromagnets.
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Submitted 21 August, 2023;
originally announced August 2023.
Extremely low energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/GaAlAs heterostructures
Authors:
Mahdi Hajlaoui,
Stefano Ponzoni,
Michael Deppe,
Tobias Henksmeier,
Donat Josef As,
Dirk Reuter,
Thomas Zentgraf,
Claus Michael Schneider,
Mirko Cinchetti
Abstract:
Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, ar…
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Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their electronic structure. So far, the most commonly used experimental techniques for this purpose have been all-optical spectroscopy methods that, however, are generally averaged in momentum space. Additional information can be gained by angle-resolved photoelectron spectroscopy (ARPES), which measures the electronic structure with momentum resolution. Here we report on the use of extremely low energy ARPES (photon energy $\sim$ 7 eV) to increase its depth sensitivity and access buried QW states, located at 3 nm and 6 nm below the surface of cubic-GaN/AlN and GaAs/AlGaAs heterostructures, respectively. We find that the QW states in cubic-GaN/AlN can indeed be observed, but not their energy dispersion because of the high surface roughness. The GaAs/AlGaAs QW states, on the other hand, are buried too deep to be detected by extremely low energy ARPES. Since the sample surface is much flatter, the ARPES spectra of the GaAs/AlGaAs show distinct features in momentum space, which can be reconducted to the band structure of the topmost surface layer of the QW structure. Our results provide important information about the samples' properties required to perform extremely low energy ARPES experiments on electronic states buried in semiconductor heterostructures.
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Submitted 11 May, 2021;
originally announced May 2021.
