-
Extremely Large Nondegenerate Nonlinear Index and Phase Shift in Epsilon-Near-Zero Materials
Authors:
Sepehr Benis,
Natalia Munera,
Sanaz Faryadras,
Eric W. Van Stryland,
David J. Hagan
Abstract:
Epsilon-near-zero (ENZ) materials have emerged as viable platforms for strong nonlinear optical (NLO) interactions. The NLO phase shift in materials exhibiting an ENZ condition is extremely large, however, direct experimental measurements of the magnitude and time dynamics of this phenomenon, particularly nondegenerate NLO phase shifts, have so far been lacking. Here, we directly measure the NLO p…
▽ More
Epsilon-near-zero (ENZ) materials have emerged as viable platforms for strong nonlinear optical (NLO) interactions. The NLO phase shift in materials exhibiting an ENZ condition is extremely large, however, direct experimental measurements of the magnitude and time dynamics of this phenomenon, particularly nondegenerate NLO phase shifts, have so far been lacking. Here, we directly measure the NLO phase shift of an Indium-Tin-Oxide (ITO) thin film using three different techniques. By characterizing the excitation-induced, time resolved Beam Deflection (BD) of a probe beam, we measure the nondegenerate NLO effects, allowing a separate determination of the effects of excitation and probe wavelengths on the NLO phase shift as they are varied across the ENZ region. These experiments reveal that having the probe pulse centered at ENZ greatly contributes to this enhancement; however, the NLO phase shift is less sensitive to the excitation wavelength, which only slightly enhances the nonlinearity for obliquely incident TM-polarized light. We also find that the spectral shift of the probe pulse induced by the excitation follows both the magnitude and time dynamics of the NLO phase shift measured via the BD experiments. We observe large, ultrafast cross-phase modulation in agreement with a redistribution of carriers in the conduction band. Finally using the Z-Scan method, we measure the degenerate nonlinear refraction at ENZ near normal incidence. The results of all three measurements agree, revealing a gigantic sub-picosecond NLO phase shift in ITO. At its largest, we consistently measure an effective induced index change that is greater than the linear index.
△ Less
Submitted 27 May, 2022;
originally announced May 2022.
-
Refraction of space-time wave packets in a dispersive medium
Authors:
Murat Yessenov,
Sanaz Faryadras,
Sepehr Benis,
David J. Hagan,
Eric W. Van Stryland,
Ayman F. Abouraddy
Abstract:
Space-time (ST) wave packets are a class of pulsed optical beams whose spatio-temporal spectral structure results in propagation invariance, tunable group velocity, and fascinating refractive phenomena. Here, we investigate the refraction of ST wave packets at a planar interface between two dispersive, homogeneous, isotropic media. We formulate a new refractive invariant for ST wave packets in thi…
▽ More
Space-time (ST) wave packets are a class of pulsed optical beams whose spatio-temporal spectral structure results in propagation invariance, tunable group velocity, and fascinating refractive phenomena. Here, we investigate the refraction of ST wave packets at a planar interface between two dispersive, homogeneous, isotropic media. We formulate a new refractive invariant for ST wave packets in this configuration, from which we obtain a law of refraction that determines the change in their group velocity across the interface. We verify this new refraction law in ZnSe and CdSe, both of which manifest large chromatic dispersion at near-infrared frequencies in the vicinity of their band edges. ST wave packets can thus be a tool in nonlinear optics for bridging large group-velocity mismatches in highly dispersive scenarios.
△ Less
Submitted 7 December, 2021;
originally announced December 2021.
-
Three-Photon Absorption Spectra and Bandgap Scaling in Direct-Gap Semiconductors
Authors:
Sepehr Benis,
Claudiu M. Cirloganu,
Nicholas Cox,
Trenton Ensley,
Honghua Hu,
Gero Nootz,
Peter D. Olszak,
Lazaro A. Padilha,
Davorin Peceli,
Matthew Reichert,
Scott Webster,
Milton Woodall,
David J. Hagan,
Eric W. Van Stryland
Abstract:
This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the 8-band model exhi…
▽ More
This paper presents three-photon absorption (3PA) measurement results for nine direct-gap semiconductors, including full 3PA spectra for ZnSe, ZnS, and GaAs. These results, along with our theory of 3PA using an 8-band Kane model (4 bands with double spin degeneracy), help to explain the significant disagreements between experiments and theory in the literature to date. 3PA in the 8-band model exhibits quantum interference between the various possible pathways that is not observed in previous 2-band theories. We present measurements of degenerate 3PA coefficients in InSb, GaAs, CdTe, CdSe, ZnTe, CdS, ZnSe, ZnO, and ZnS. We examine bandgap, Eg, scaling using 2-band tunneling and perturbation theories that show agreement with the predicted Eg^-7 dependence; however, For those semiconductors for which we measured full 3PA spectra, we observe significant discrepancies with both 2-band theories. On the other hand, our 8-band model shows excellent agreement with the spectral data. We then use our 8-band theory to predict the 3PA spectra for 15 different semiconductors in their zincblende form. These results allow prediction and interpretation of the 3PA coefficients for various narrow to wide bandgap semiconductors.
△ Less
Submitted 12 May, 2020;
originally announced May 2020.
-
Observation of Nondegenerate Two-Photon Gain in GaAs
Authors:
Matthew Reichert,
Arthur L. Smirl,
Greg Salamo,
David J. Hagan,
Eric W. Van Stryland
Abstract:
Two-photon lasers require materials with large two-photon gain (2PG) coefficients and low linear and nonlinear losses. Our previous demonstration of large enhancement of two-photon absorption in semiconductors for very different photon energies translates directly into enhancement of 2PG. We experimentally demonstrate nondegenerate 2PG in optically excited bulk GaAs via femtosecond pump-probe meas…
▽ More
Two-photon lasers require materials with large two-photon gain (2PG) coefficients and low linear and nonlinear losses. Our previous demonstration of large enhancement of two-photon absorption in semiconductors for very different photon energies translates directly into enhancement of 2PG. We experimentally demonstrate nondegenerate 2PG in optically excited bulk GaAs via femtosecond pump-probe measurements. 2PG is isolated from other pump induced effects through the difference between measurements performed with parallel and perpendicular polarizations of pump and probe. An enhancement in the 2PG coefficient of nearly two orders-of-magnitude is reported. The results point a possible way toward two-photon semiconductor lasers.
△ Less
Submitted 18 February, 2016;
originally announced February 2016.
-
3-D IR imaging with uncooled GaN photodiodes using nondegenerate two-photon absorption
Authors:
Himansu S. Pattanaik,
Matthew Reichert,
David J. Hagan,
Eric W. Van Stryland
Abstract:
We utilize the recently demonstrated orders of magnitude enhancement of extremely nondegenerate two-photon absorption in direct-gap semiconductor photodiodes to perform scanned imaging of 3D structures using IR femtosecond illumination pulses (1.6 um and 4.93 um) gated on the GaN detector by sub-gap, femtosecond pulses. While transverse resolution is limited by the usual imaging criteria, the long…
▽ More
We utilize the recently demonstrated orders of magnitude enhancement of extremely nondegenerate two-photon absorption in direct-gap semiconductor photodiodes to perform scanned imaging of 3D structures using IR femtosecond illumination pulses (1.6 um and 4.93 um) gated on the GaN detector by sub-gap, femtosecond pulses. While transverse resolution is limited by the usual imaging criteria, the longitudinal or depth resolution can be less than a wavelength, dependent on the pulsewidths in this nonlinear interaction within the detector element. The imaging system can accommodate a wide range of wavelengths in the mid-IR and near-IR without the need to modify the detection and imaging systems.
△ Less
Submitted 2 November, 2015; v1 submitted 30 October, 2015;
originally announced October 2015.
-
Enhancement of Two-photon Absorption in Quantum Wells for Extremely Nondegenerate Photon Pairs
Authors:
Himansu S. Pattanaik,
Matthew Reichert,
Jacob B. Khurgin,
David J. Hagan,
Eric W. Van Stryland
Abstract:
We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further enhancement of nondegenerate 2PA will be observed in quantum wells (QWs) since the intraband matrix elements do not vanish near the band center as they do in the b…
▽ More
We recently demonstrated orders of magnitude enhancement of two-photon absorption (2PA) in direct gap semiconductors due to intermediate state resonance enhancement for photons of very different energies. It can be expected that further enhancement of nondegenerate 2PA will be observed in quantum wells (QWs) since the intraband matrix elements do not vanish near the band center as they do in the bulk, and the density of states in QWs is larger near the band edge. Here we present a perturbation-theory based theoretical description of nondegenerate 2PA in semiconductor QWs, where both frequency and polarization of two incident waves can vary independently. Analytical expressions for all possible permutations of frequencies and polarizations have been obtained, and the results are compared with degenerate 2PA in quantum wells along with degenerate and nondegenerate 2PA in bulk semiconductors. We show that using QWs in place of bulk semiconductors with both beams in the TM-polarized mode leads to an additional order of magnitude increase in the nondegenerate 2PA. Explicit calculations for GaAs QWs are presented.
△ Less
Submitted 2 November, 2015; v1 submitted 27 October, 2015;
originally announced October 2015.
-
Effective Third-Order Nonlinearities in Metallic Refractory Titanium Nitride Thin Films
Authors:
Nathaniel Kinsey,
Akbar Ali Sayed,
Devon Courtwright,
Clayton DeVault,
Carl E. Bonner,
Vladimir I. Gavrilenko,
Vladimir M. Shalaev,
David J. Hagan,
Eric W. Van Stryland,
Alexandra Boltasseva
Abstract:
Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan…
▽ More
Nanophotonic devices offer an unprecedented ability to concentrate light into small volumes which can greatly increase nonlinear effects. However, traditional plasmonic materials suffer from low damage thresholds and are not compatible with standard semiconductor technology. Here we study the nonlinear optical properties in the novel refractory plasmonic material titanium nitride using the Z scan method at 1550 nm and 780 nm. We compare the extracted nonlinear parameters for TiN with previous works on noble metals and note a similarly large nonlinear optical response. However, TiN films have been shown to exhibit a damage threshold up to an order of magnitude higher than gold films of a similar thickness, while also being robust, cost-efficient, bio- and CMOS compatible. Together, these properties make TiN a promising material for metal-based nonlinear optics.
△ Less
Submitted 23 July, 2015;
originally announced July 2015.
