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Breakdown of the Born-Oppenheimer approximation in LiH and LiD
Authors:
Ville J. Härkönen
Abstract:
We compute the ab-initio electron density beyond the Born-Oppenheimer approximation in crystalline LiH and LiD with density functional methods. We report significant beyond Born-Oppenheimer corrections to electron density in the vicinity of nuclei equilibrium positions. We thus verify the breakdown of the Born-Oppenheimer approximation, as earlier suggested on experimental grounds. A reasonable ag…
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We compute the ab-initio electron density beyond the Born-Oppenheimer approximation in crystalline LiH and LiD with density functional methods. We report significant beyond Born-Oppenheimer corrections to electron density in the vicinity of nuclei equilibrium positions. We thus verify the breakdown of the Born-Oppenheimer approximation, as earlier suggested on experimental grounds. A reasonable agreement between the experimental and computational results is found. The results indicate the existence of beyond Born-Oppenheimer effects in solids at normal pressures and suggest that these effects can be significant also in solids containing elements other than hydrogen as well.
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Submitted 4 April, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
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Multispectral Photon-Counting for Medical Imaging and Beam Characterization
Authors:
E. Brücken,
S. Bharthuar,
M. Emzir,
M. Golovleva,
A. Gädda,
R. Hostettler,
J. Härkönen,
S. Kirschenmann,
V. Litichevskyi,
P. Luukka,
L. Martikainen,
T. Naaranoja,
I. Nincă,
J. Ott,
H. Petrow,
Z. Purisha,
T. Siiskonen,
S. Särkkä,
J. Tikkanen,
T. Tuuva,
A. Winkler
Abstract:
We present the current status of our project of develo** a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle…
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We present the current status of our project of develo** a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle physics experiments at CERN. Here we describe the manufacturing process of our sensors as well as the processing steps for the assembly of first prototypes. The prototypes use currently the PSI46digV2.1-r readout chip. The accompanying readout electronics chain that was used for first measurements will also be discussed. Finally we present an advanced algorithm developed by us for image reconstruction using such photon counting detectors with focus on boron neutron capture therapy. This work is conducted within a consortium of Finnish research groups from Helsinki Institute of Physics, Aalto University, Lappeenranta-Lahti University of Technology LUT and Radiation and Nuclear Safety Authority (STUK) under the RADDESS program of Academy of Finland. Keywords: Solid state detectors, X-ray detectors, Gamma detectors, Neutron detectors, Instrumentation for hadron therapy, Medical-image reconstruction methods and algorithms.
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Submitted 20 February, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
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Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
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A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
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Submitted 1 June, 2017;
originally announced June 2017.
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Simulation study of signal formation in position sensitive planar p-on-n silicon detectors after short range charge injection
Authors:
Timo Peltola,
Vladimir Eremin,
Elena Verbitskaya,
Jaakko Härkönen
Abstract:
Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence, detectors with fast response to fit the short sha** time of 20 ns and sufficient radiation hardness are required.
Measurements carried out at the Ioffe Institute have shown a r…
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Segmented silicon detectors (micropixel and microstrip) are the main type of detectors used in the inner trackers of Large Hadron Collider (LHC) experiments at CERN. Due to the high luminosity and eventual high fluence, detectors with fast response to fit the short sha** time of 20 ns and sufficient radiation hardness are required.
Measurements carried out at the Ioffe Institute have shown a reversal of the pulse polarity in the detector response to short-range charge injection. Since the measured negative signal is about 30-60% of the peak positive signal, the effect strongly reduces the CCE even in non-irradiated detectors. For further investigation of the phenomenon the measurements have been reproduced by TCAD simulations.
As for the measurements, the simulation study was applied for the p-on-n strip detectors similar in geometry to those developed for the ATLAS experiment and for the Ioffe Institute designed p-on-n strip detectors with each strip having a window in the metallization covering the p$^+$ implant, allowing the generation of electron-hole pairs under the strip implant. Red laser scans across the strips and the interstrip gap with varying laser diameters and Si-SiO$_2$ interface charge densities were carried out. The results verify the experimentally observed negative response along the scan in the interstrip gap. When the laser spot is positioned on the strip p$^+$ implant the negative response vanishes and the collected charge at the active strip proportionally increases.
The simulation results offer a further insight and understanding of the influence of the oxide charge density in the signal formation. The observed effects and details of the detector response for different charge injection positions are discussed in the context of Ramo's theorem.
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Submitted 2 October, 2017; v1 submitted 11 April, 2017;
originally announced April 2017.
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Characterization of Thin p-on-p Radiation Detectors with Active Edges
Authors:
T. Peltola,
X. Wu,
J. Kalliopuska,
C. Granja,
J. Jakubek,
M. Jakubek,
J. Härkönen,
A. Gädda
Abstract:
Active edge p-on-p silicon pixel detectors with thickness of 100 $μ$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edg…
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Active edge p-on-p silicon pixel detectors with thickness of 100 $μ$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial map** show that at pixel-to-edge distances less than 100 $μ$m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.
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Submitted 21 January, 2016; v1 submitted 6 January, 2016;
originally announced January 2016.
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Trap** in irradiated p-on-n silicon sensors at fluences anticipated at the HL-LHC outer tracker
Authors:
W. Adam,
T. Bergauer,
M. Dragicevic,
M. Friedl,
R. Fruehwirth,
M. Hoch,
J. Hrubec,
M. Krammer,
W. Treberspurg,
W. Waltenberger,
S. Alderweireldt,
W. Beaumont,
X. Janssen,
S. Luyckx,
P. Van Mechelen,
N. Van Remortel,
A. Van Spilbeeck,
P. Barria,
C. Caillol,
B. Clerbaux,
G. De Lentdecker,
D. Dobur,
L. Favart,
A. Grebenyuk,
Th. Lenzi
, et al. (663 additional authors not shown)
Abstract:
The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determi…
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The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 $μ$m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to $3 \cdot 10^{15}$ neq/cm$^2$. Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trap** rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trap** rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trap** rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggests an improved tracker performance over initial expectations.
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Submitted 7 May, 2015;
originally announced May 2015.
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Processing and characterization of epitaxial GaAs radiation detectors
Authors:
X. Wu,
T. Peltola,
T. Arsenovich,
A. Gädda,
J. Härkönen,
A. Junkes,
A. Karadzhinova,
P. Kostamo,
H. Lipsanen,
P. Luukka,
M. Mattila,
S. Nenonen,
T. Riekkinen,
E. Tuominen,
A. Winkler
Abstract:
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase…
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GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage ($V_{\textrm{fd}}$) of the detectors with 110 $μ\textrm{m}$ epi-layer thickness is in the range of 8 V - 15 V and the leakage current density is about 10 nA/cm$^2$. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.
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Submitted 13 March, 2015;
originally announced March 2015.
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Czochralski Silicon as a Detector Material for S-LHC Tracker Volumes
Authors:
Leonard Spiegel,
Tobias Barvich,
Burt Betchart,
Saptaparna Bhattacharya,
Sandor Czellar,
Regina Demina,
Alexander Dierlamm,
Martin Frey,
Yuri Gotra,
Jaakko Härkönen,
Frank Hartmann,
Ivan Kassamakov,
Sergey Korjenevski,
Matti J. Kortelainen,
Tapio Lampén,
Teppo Mäenpää,
Henri Moilanen,
Meenakshi Narain,
Maike Neuland,
Douglas Orbaker,
Hans-Jürgen Simonis,
Pia Steck,
Eija Tuominen,
Esa Tuovinen
Abstract:
With an expected ten-fold increase in luminosity in S-LHC, the radiation environment in the tracker volumes will be considerably harsher for silicon-based detectors than the already harsh LHC environment. Since 2006, a group of CMS institutes, using a modified CMS DAQ system, has been exploring the use of Magnetic Czochralski silicon as a detector element for the strip tracker layers in S-LHC expe…
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With an expected ten-fold increase in luminosity in S-LHC, the radiation environment in the tracker volumes will be considerably harsher for silicon-based detectors than the already harsh LHC environment. Since 2006, a group of CMS institutes, using a modified CMS DAQ system, has been exploring the use of Magnetic Czochralski silicon as a detector element for the strip tracker layers in S-LHC experiments. Both p+/n-/n+ and n+/p-/p+ sensors have been characterized, irradiated with proton and neutron sources, assembled into modules, and tested in a CERN beamline. There have been three beam studies to date and results from these suggest that both p+/n-/n+ and n+/p-/p+ Magnetic Czochralski silicon are sufficiently radiation hard for the $R>25$ cm regions of S-LHC tracker volumes. The group has also explored the use of forward biasing for heavily irradiated detectors, and although this mode requires sensor temperatures less than -50\,$^\circ$C, the charge collection efficiency appears to be promising.
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Submitted 24 August, 2010;
originally announced August 2010.
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Novel Data Acquisition System for Silicon Tracking Detectors
Authors:
L. A. Wendland,
K. Banzuzi,
S. Czellar,
A. Heikkinen,
J. Harkonen,
P. Johansson,
V. Karimaki,
T. Lampen,
P. Luukka,
P. Mehtala,
J. Niku,
S. Nummela,
J. Nysten,
J. Simpura,
E. Tuovinen,
E. Tuominen,
J. Tuominiemi,
D. Ungaro,
T. Vaarala,
M. Voutilainen,
A. Zibellini
Abstract:
We have developed a novel data acquisition system for measuring tracking parameters of a silicon detector in a particle beam. The system is based on a commercial Analog-to-Digital VME module and a PC Linux based Data Acquisition System. This DAQ is realized with C++ code using object-oriented techniques. Track parameters for the beam particles were reconstructed using off-line analysis code and…
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We have developed a novel data acquisition system for measuring tracking parameters of a silicon detector in a particle beam. The system is based on a commercial Analog-to-Digital VME module and a PC Linux based Data Acquisition System. This DAQ is realized with C++ code using object-oriented techniques. Track parameters for the beam particles were reconstructed using off-line analysis code and automatic detector position alignment algorithm.
The new DAQ was used to test novel Czochralski type silicon detectors. The important silicon detector parameters, including signal size distributions and signal to noise distributions, were successfully extracted from the detector under study. The efficiency of the detector was measured to be 95 %, the resolution about 10 micrometers, and the signal to noise ratio about 10.
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Submitted 2 June, 2003;
originally announced June 2003.
