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Exploring van der Waals materials with high anisotropy: geometrical and optical approaches
Authors:
Aleksandr S. Slavich,
Georgy A. Ermolaev,
Mikhail K. Tatmyshevskiy,
Adilet N. Toksumakov,
Olga G. Matveeva,
Dmitriy V. Grudinin,
Arslan Mazitov,
Konstantin V. Kravtsov,
Alexander V. Syuy,
Dmitry M. Tsymbarenko,
Mikhail S. Mironov,
Sergey M. Novikov,
Ivan Kruglov,
Davit A. Ghazaryan,
Andrey A. Vyshnevyy,
Aleksey V. Arsenin,
Valentyn S. Volkov,
Kostya S. Novoselov
Abstract:
The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family…
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The emergence of van der Waals (vdW) materials resulted in the discovery of their giant optical, mechanical, and electronic anisotropic properties, immediately enabling countless novel phenomena and applications. Such success inspired an intensive search for the highest possible anisotropic properties among vdW materials. Furthermore, the identification of the most promising among the huge family of vdW materials is a challenging quest requiring innovative approaches. Here, we suggest an easy-to-use method for such a survey based on the crystallographic geometrical perspective of vdW materials followed by their optical characterization. Using our approach, we found As2S3 as a highly anisotropic vdW material. It demonstrates rare giant in-plane optical anisotropy, high refractive index and transparency in the visible range, overcoming the century-long record set by rutile. Given these benefits, As2S3 opens a pathway towards next-generation nanophotonics as demonstrated by an ultrathin true zero-order quarter-waveplate that combines classical and the Fabry-Perot optical phase accumulations. Hence, our approach provides an effective and easy-to-use method to find vdW materials with the utmost anisotropic properties.
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Submitted 5 September, 2023;
originally announced September 2023.
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A hidden advantage of van der Waals materials for overcoming limitations in photonic integrated circuitry
Authors:
Andrey A. Vyshnevyy,
Georgy A. Ermolaev,
Dmitriy V. Grudinin,
Kirill V. Voronin,
Ivan Kharichkin,
Arslan Mazitov,
Ivan A. Kruglov,
Dmitry I. Yakubovsky,
Prabhash Mishra,
Roman V. Kirtaev,
Aleksey V. Arsenin,
Kostya S. Novoselov,
Luis Martin-Moreno,
Valentyn S. Volkov
Abstract:
With the advance of on-chip nanophotonics, there is a high demand for high refractive index, low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with high refractive index can offer a very advanced alternative. Still, up to now it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development…
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With the advance of on-chip nanophotonics, there is a high demand for high refractive index, low-loss materials. Currently, this technology is dominated by silicon, but van der Waals (vdW) materials with high refractive index can offer a very advanced alternative. Still, up to now it was not clear if the optical anisotropy perpendicular to the layers might be a hindering factor for the development of vdW nanophotonics. Here, we studied WS2-based waveguides in terms of their optical properties and, particularly, in terms of possible crosstalk distance. Surprisingly, we discovered that the low refractive index in the direction perpendicular to the atomic layers improves the characteristics of such devices, mainly due to expanding the range of parameters at which single-mode propagation can be achieved. Thus, using anisotropic materials offers new opportunities and novel control knobs when designing the nanophotonic devices.
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Submitted 31 March, 2023;
originally announced April 2023.
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Hexagonal boron nitride nanophotonics
Authors:
D. V. Grudinin,
G. A. Ermolaev,
D. G. Baranov,
A. N. Toksumakov,
K. V. Voronin,
A. S. Slavich,
A. A. Vyshnevyy,
A. B. Mazitov,
I. A. Kruglov,
D. Ghazaryan,
A. V. Arsenin,
K. S. Novoselov,
V. S. Volkov
Abstract:
A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of promising materials for the future nanophotonics owing to its inherent anisotro…
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A global trend to miniaturization and multiwavelength performance of nanophotonic devices drives research on novel phenomena, such as bound states in the continuum and Mietronics, as well as the survey for high-refractive index and strongly anisotropic materials and metasurfaces. Hexagonal boron nitride (hBN) is one of promising materials for the future nanophotonics owing to its inherent anisotropy and prospects of high-quality monocrystals growth with atomically flat surface. Here, we present highly accurate optical constants of hBN in the broad wavelength range of 250-1700 nm combining the imaging ellipsometry measurements scanning near-field optical microscopy and first-principle quantum mechanical computations. hBN's high refractive index, up to 2.75 in ultraviolet (UV) and visible range, broadband birefringence of 0.7, and negligible optical losses make it an outstanding material for UV and visible range photonics. Based on our measurement results, we propose and design novel optical elements: handedness-preserving mirrors and subwavelength waveguides with dimensions of 40 nm operating in the visible and UV range, respectively. Remarkably, our results offer unique opportunity to bridge the size-gap between photonics and electronics.
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Submitted 5 March, 2023;
originally announced March 2023.
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Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics
Authors:
G. A. Ermolaev,
D. V. Grudinin,
Y. V. Stebunov,
K. V. Voronin,
V. G. Kravets,
J. Duan,
A. B. Mazitov,
G. I. Tselikov,
A. Bylinkin,
D. I. Yakubovsky,
S. M. Novikov,
D. G. Baranov,
A. Y. Nikitin,
I. A. Kruglov,
T. Shegai,
P. Alonso-González,
A. N. Grigorenko,
A. V. Arsenin,
K. S. Novoselov,
V. S. Volkov
Abstract:
Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspir…
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Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Walls interaction. To do this, we carried out a correlative far- and near-field characterization validated by first-principle calculations that reveals an unprecedented birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this outstanding anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics.
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Submitted 11 January, 2021; v1 submitted 1 June, 2020;
originally announced June 2020.
