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Graphene-silicon device for visible and infrared photodetection
Authors:
Aniello Pelella,
Alessandro Grillo,
Enver Faella,
Giuseppe Luongo,
Mohammad Bagher Askari,
Antonio Di Bartolomeo
Abstract:
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of…
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The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of a $Gr-Si_3N_4-Si$ structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to $10^4$. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height at zero bias, $φ_{b0}=0.24 eV$, the effective Richardson's constant, $A^*=7 \cdot 10^{-10} AK^{-2}cm^{-2}$, and the diode ideality factor n=2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity up to 350 mA/W and external quantum efficiency (EQE) up to 75% is achieved in the 500-1200 nm wavelength range. A decrease of responsivity to 0.4 mA/W and EQE to 0.03% is observed above 1200 nm, that is in the IR region beyond the silicon optical bandgap, in which photoexcitation is driven by graphene. Finally, a model based on two back-to-back diodes, one for the Gr-Si junction. the other for the $Gr-Si_3N_4-Si$ MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.
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Submitted 20 May, 2021;
originally announced May 2021.
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A current-voltage model for double Schottky barrier devices
Authors:
Alessandro Grillo,
Antonio Di Bartolomeo
Abstract:
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of mono and two-dimensional nanostructured materials, although their impact on the current-voltage characteristics has been frequently neglected or misun…
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Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of mono and two-dimensional nanostructured materials, although their impact on the current-voltage characteristics has been frequently neglected or misunderstood. In this work, we propose a single equation to describe the current-voltage characteristics of two-terminal semiconductor devices with Schottky contacts. We apply the equation to numerically simulate the electrical behaviour for both ideal and non-ideal Schottky barriers. The proposed model can be used to directly estimate the Schottky barrier height and the ideality factor. We apply it to perfectly reproduce the experimental current-voltage characteristics of ultrathin molybdenum disulphide or tungsten diselenide nanosheets and tungsten disulphide nanotubes. The model constitutes a useful tool for the analysis and the extraction of relevant transport parameters in any two-terminal device with Schottky contacts.
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Submitted 13 December, 2020;
originally announced December 2020.
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The ABC130 barrel module prototy** programme for the ATLAS strip tracker
Authors:
Luise Poley,
Craig Sawyer,
Sagar Addepalli,
Anthony Affolder,
Bruno Allongue,
Phil Allport,
Eric Anderssen,
Francis Anghinolfi,
Jean-François Arguin,
Jan-Hendrik Arling,
Olivier Arnaez,
Nedaa Alexandra Asbah,
Joe Ashby,
Eleni Myrto Asimakopoulou,
Naim Bora Atlay,
Ludwig Bartsch,
Matthew J. Basso,
James Beacham,
Scott L. Beaupré,
Graham Beck,
Carl Beichert,
Laura Bergsten,
Jose Bernabeu,
Prajita Bhattarai,
Ingo Bloch
, et al. (224 additional authors not shown)
Abstract:
For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000…
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For the Phase-II Upgrade of the ATLAS Detector, its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100 % silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototy** programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-25) and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototy** program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
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Submitted 7 September, 2020;
originally announced September 2020.
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Gate-controlled field emission current from MoS$_2$ nanosheets
Authors:
Aniello Pelella,
Alessandro Grillo,
Francesca Urban,
Filippo Giubileo,
Maurizio Passacantando,
Erik Pollmann,
Stephan Sleziona,
Marika Schleberger,
Antonio Di Bartolomeo
Abstract:
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurem…
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Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission.
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Submitted 22 August, 2020;
originally announced August 2020.
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Field emission from two-dimensional GeAs
Authors:
Antonio Di Bartolomeo,
Alessandro Grillo,
Filippo Giubileo,
Luca Camilli,
Jianbo Sun,
Daniele Capista,
Maurizio Passacantando
Abstract:
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron…
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GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAs nanoflakes are structurally characterized and used as the channel of back-gate field-effect transistors. It is shown that their gate-modulated p-type conduction is decreased by exposure to light or electron beam. Moreover, the observation of a field emission current demonstrates the suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up new perspective applications of two-dimensional GeAs in vacuum electronics. Field emission occurs with a turn-on field of ~80 V/μm and attains a current density higher than 10 A/cm^2, following the general Fowler-Nordheim model with high reproducibility.
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Submitted 11 July, 2020;
originally announced July 2020.
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Vacuum gauge from ultrathin MoS2 transistor
Authors:
A. Di Bartolomeo,
A. Pelella,
A. Grillo,
F. Urban,
L. Iemmo,
E. Faella,
N. Martucciello,
F. Giubileo
Abstract:
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-…
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We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-do** of the MoS2 channel.
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Submitted 8 June, 2020;
originally announced June 2020.
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Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors
Authors:
A. Pelella,
O. Kharsah,
A. Grillo,
F. Urban,
M. Passacantando,
F. Giubileo,
L. Iemmo,
S. Sleziona,
E. Pollmann,
L. Madauß,
M. Schleberger,
A. Di Bartolomeo
Abstract:
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. H…
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This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.
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Submitted 2 April, 2020;
originally announced April 2020.
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Electron irradiation on multilayer PdSe$_2$ field effect transistors
Authors:
A. Di Bartolomeo,
F. Urban,
A. Pelella,
A. Grillo,
M. Passacantando,
X. Liu,
F. Giubileo
Abstract:
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drai…
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Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain Pd leads enable contacts with resistance below 350 kOhm um. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 keV electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 e-/nm2 dramatically change the transistor behavior demonstrating a high sensitivity of PdSe2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than 4000 e-/nm2. The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trap** in slow trap states at the Si/SiO_2 interface.
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Submitted 22 February, 2020;
originally announced February 2020.
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Field emission in ultrathin PdSe2 back-gated transistors
Authors:
A. Di Bartolomeo,
A. Pelella,
F. Urban,
A. Grillo,
L. Iemmo,
M. Passacantando,
X. Liu,
F. Giubileo
Abstract:
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In th…
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We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.
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Submitted 13 February, 2020;
originally announced February 2020.
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Characterization method to achieve simultaneous absolute PDE measurements of all pixels of an ASTRI Mini-Array camera tile
Authors:
G. Bonanno,
G. Romeo,
G. Occhipinti,
M. C. Timpanaro,
A. Grillo
Abstract:
Recently, the Istituto Nazionale di Astrofisica (INAF) has placed a contract with Hamamatsu Photonics to acquire hundreds of Silicon Photomultipliers (SiPM) tiles to build 10 cameras with 37 tiles each for the ASTRI Mini-Array (MA) project. Each tile is made up of 8x8 pixels of 7x7 mm2 with micro-cells of 75um. To check the quality of the delivered tiles a complex and acurate test plan has been st…
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Recently, the Istituto Nazionale di Astrofisica (INAF) has placed a contract with Hamamatsu Photonics to acquire hundreds of Silicon Photomultipliers (SiPM) tiles to build 10 cameras with 37 tiles each for the ASTRI Mini-Array (MA) project. Each tile is made up of 8x8 pixels of 7x7 mm2 with micro-cells of 75um. To check the quality of the delivered tiles a complex and acurate test plan has been studied. The possibility to simultaneously analyse as many pixels as possible becomes of crucial im-portance. Dark Count Rate (DCR) versus over-voltage and versus temperature and Optical Cross Talk (OCT) versus over-voltage can be easily measured simultaneously for all pixels because they are carried out in dark conditions. On the contrary, simultaneous Photon Detection Efficiency (PDE) measurement of all pixels of a tile is not easily achievable and needs an appropriate optical set-up. Simultaneous measurements have the advantage of speeding up the entire procedure and enabling quick PDE compari-son of all the tile pixels. The paper describes the preliminary steps to guarantee an accurate absolute PDE measurement and the investigation the capa-bility of the electronics to obtain simultaneous PDE measurements. It also demonstrates the possibility of using a calibrated SiPM as reference detector instead of a calibrated photodiode. The method to achieve accurate absolute PDE of four central pixels of a tile is also described.
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Submitted 13 December, 2019;
originally announced December 2019.
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Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
Authors:
Francesca Urban,
Grzegorz Lupina,
Alessandro Grillo,
Nadia Martucciello,
Antonio Di Bartolomeo
Abstract:
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate graphene field-effect transistors with different geometries to study the contact and channe…
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The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of the gate-voltage dependence of the carrier mobility. We find that the gate voltage modulates the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that the raising temperature lowers the carrier mobility, has negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance an be achieved by the zig-zag sha** of the Ni contact.
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Submitted 10 December, 2019;
originally announced December 2019.
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Primer on Detectors and Electronics for Particle Physics Experiments
Authors:
A. A. Grillo
Abstract:
This primer is a brief introduction to the technologies used in particle detectors designed for high-energy particle physics experiments. The intended readers are students, especially undergraduates, starting laboratory work.
This primer is a brief introduction to the technologies used in particle detectors designed for high-energy particle physics experiments. The intended readers are students, especially undergraduates, starting laboratory work.
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Submitted 11 June, 2019;
originally announced June 2019.
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Spectral Calibration of the Fluorescence Telescopes of the Pierre Auger Observatory
Authors:
The Pierre Auger Collaboration,
A. Aab,
P. Abreu,
M. Aglietta,
I. Al Samarai,
I. F. M. Albuquerque,
I. Allekotte,
A. Almela,
J. Alvarez Castillo,
J. Alvarez-Muñiz,
G. A. Anastasi,
L. Anchordoqui,
B. Andrada,
S. Andringa,
C. Aramo,
F. Arqueros,
N. Arsene,
H. Asorey,
P. Assis,
J. Aublin,
G. Avila,
A. M. Badescu,
A. Balaceanu,
F. Barbato,
R. J. Barreira Luz
, et al. (381 additional authors not shown)
Abstract:
We present a novel method to measure precisely the relative spectral response of the fluorescence telescopes of the Pierre Auger Observatory. We used a portable light source based on a xenon flasher and a monochromator to measure the relative spectral efficiencies of eight telescopes in steps of 5 nm from 280 nm to 440 nm. Each point in a scan had approximately 2 nm FWHM out of the monochromator.…
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We present a novel method to measure precisely the relative spectral response of the fluorescence telescopes of the Pierre Auger Observatory. We used a portable light source based on a xenon flasher and a monochromator to measure the relative spectral efficiencies of eight telescopes in steps of 5 nm from 280 nm to 440 nm. Each point in a scan had approximately 2 nm FWHM out of the monochromator. Different sets of telescopes in the observatory have different optical components, and the eight telescopes measured represent two each of the four combinations of components represented in the observatory. We made an end-to-end measurement of the response from different combinations of optical components, and the monochromator setup allowed for more precise and complete measurements than our previous multi-wavelength calibrations. We find an overall uncertainty in the calibration of the spectral response of most of the telescopes of 1.5% for all wavelengths; the six oldest telescopes have larger overall uncertainties of about 2.2%. We also report changes in physics measureables due to the change in calibration, which are generally small.
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Submitted 2 October, 2017; v1 submitted 5 September, 2017;
originally announced September 2017.
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Muon Counting using Silicon Photomultipliers in the AMIGA detector of the Pierre Auger Observatory
Authors:
The Pierre Auger Collaboration,
A. Aab,
P. Abreu,
M. Aglietta,
E. J. Ahn,
I. Al Samarai,
I. F. M. Albuquerque,
I. Allekotte,
P. Allison,
A. Almela,
J. Alvarez Castillo,
J. Alvarez-Muñiz,
M. Ambrosio,
G. A. Anastasi,
L. Anchordoqui,
B. Andrada,
S. Andringa,
C. Aramo,
F. Arqueros,
N. Arsene,
H. Asorey,
P. Assis,
J. Aublin,
G. Avila,
A. M. Badescu
, et al. (400 additional authors not shown)
Abstract:
AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is com…
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AMIGA (Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory designed to extend its energy range of detection and to directly measure the muon content of the cosmic ray primary particle showers. The array will be formed by an infill of surface water-Cherenkov detectors associated with buried scintillation counters employed for muon counting. Each counter is composed of three scintillation modules, with a 10 m$^2$ detection area per module. In this paper, a new generation of detectors, replacing the current multi-pixel photomultiplier tube (PMT) with silicon photo sensors (aka. SiPMs), is proposed. The selection of the new device and its front-end electronics is explained. A method to calibrate the counting system that ensures the performance of the detector is detailed. This method has the advantage of being able to be carried out in a remote place such as the one where the detectors are deployed. High efficiency results, i.e. 98 % efficiency for the highest tested overvoltage, combined with a low probability of accidental counting ($\sim$2 %), show a promising performance for this new system.
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Submitted 4 October, 2017; v1 submitted 17 March, 2017;
originally announced March 2017.
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Prototype muon detectors for the AMIGA component of the Pierre Auger Observatory
Authors:
The Pierre Auger Collaboration,
A. Aab,
P. Abreu,
M. Aglietta,
E. J. Ahn,
I. Al Samarai,
I. F. M. Albuquerque,
I. Allekotte,
P. Allison,
A. Almela,
J. Alvarez Castillo,
J. Alvarez-Muñiz,
R. Alves Batista,
M. Ambrosio,
A. Aminaei,
G. A. Anastasi,
L. Anchordoqui,
B. Andrada,
S. Andringa,
C. Aramo,
F. Arqueros,
N. Arsene,
H. Asorey,
P. Assis,
J. Aublin
, et al. (429 additional authors not shown)
Abstract:
Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory to extend its range of detection and to directly measure the muon content of the particle showers. It consists of an infill of surface water-Cherenkov detectors accompanied by buried scintillator detectors used for muon counting. The main objectives of the AMIGA engineering array, referred to as the Unitary…
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Auger Muons and Infill for the Ground Array) is an upgrade of the Pierre Auger Observatory to extend its range of detection and to directly measure the muon content of the particle showers. It consists of an infill of surface water-Cherenkov detectors accompanied by buried scintillator detectors used for muon counting. The main objectives of the AMIGA engineering array, referred to as the Unitary Cell, are to identify and resolve all engineering issues as well as to understand the muon-number counting uncertainties related to the design of the detector. The mechanical design, fabrication and deployment processes of the muon counters of the Unitary Cell are described in this document. These muon counters modules comprise sealed PVC casings containing plastic scintillation bars, wavelength-shifter optical fibers, 64 pixel photomultiplier tubes, and acquisition electronics. The modules are buried approximately 2.25 m below ground level in order to minimize contamination from electromagnetic shower particles. The mechanical setup, which allows access to the electronics for maintenance, is also described in addition to tests of the modules' response and integrity. The completed Unitary Cell has measured a number of air showers of which a first analysis of a sample event is included here.
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Submitted 12 May, 2016; v1 submitted 5 May, 2016;
originally announced May 2016.
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Nanosecond-level time synchronization of autonomous radio detector stations for extensive air showers
Authors:
The Pierre Auger Collaboration,
A. Aab,
P. Abreu,
M. Aglietta,
E. J. Ahn,
I. Al Samarai,
I. F. M. Albuquerque,
I. Allekotte,
P. Allison,
A. Almela,
J. Alvarez Castillo,
J. Alvarez-Muñiz,
R. Alves Batista,
M. Ambrosio,
A. Aminaei,
G. A. Anastasi,
L. Anchordoqui,
S. Andringa,
C. Aramo,
F. Arqueros,
N. Arsene,
H. Asorey,
P. Assis,
J. Aublin,
G. Avila
, et al. (426 additional authors not shown)
Abstract:
To exploit the full potential of radio measurements of cosmic-ray air showers at MHz frequencies, a detector timing synchronization within 1 ns is needed. Large distributed radio detector arrays such as the Auger Engineering Radio Array (AERA) rely on timing via the Global Positioning System (GPS) for the synchronization of individual detector station clocks. Unfortunately, GPS timing is expected…
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To exploit the full potential of radio measurements of cosmic-ray air showers at MHz frequencies, a detector timing synchronization within 1 ns is needed. Large distributed radio detector arrays such as the Auger Engineering Radio Array (AERA) rely on timing via the Global Positioning System (GPS) for the synchronization of individual detector station clocks. Unfortunately, GPS timing is expected to have an accuracy no better than about 5 ns. In practice, in particular in AERA, the GPS clocks exhibit drifts on the order of tens of ns. We developed a technique to correct for the GPS drifts, and an independent method is used for cross-checks that indeed we reach nanosecond-scale timing accuracy by this correction. First, we operate a "beacon transmitter" which emits defined sine waves detected by AERA antennas recorded within the physics data. The relative phasing of these sine waves can be used to correct for GPS clock drifts. In addition to this, we observe radio pulses emitted by commercial airplanes, the position of which we determine in real time from Automatic Dependent Surveillance Broadcasts intercepted with a software-defined radio. From the known source location and the measured arrival times of the pulses we determine relative timing offsets between radio detector stations. We demonstrate with a combined analysis that the two methods give a consistent timing calibration with an accuracy of 2 ns or better. Consequently, the beacon method alone can be used in the future to continuously determine and correct for GPS clock drifts in each individual event measured by AERA.
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Submitted 15 February, 2016; v1 submitted 7 December, 2015;
originally announced December 2015.
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Characterization and performance of the ASIC (CITIROC) front-end of the ASTRI camera
Authors:
D. Impiombato,
S. Giarrusso,
T. Mineo,
O. Catalano,
C. Gargano,
G. La Rosa,
F. Russo,
G. Sottile,
S. Billotta,
G. Bonanno,
S. Garozzo,
A. Grillo,
D. Marano,
G. Romeo
Abstract:
The Cherenkov Imaging Telescope Integrated Read Out Chip, CITIROC, is a chip adopted as the front-end of the camera at the focal plane of the imaging Cherenkov ASTRI dual-mirror small size telescope (ASTRI SST-2M) prototype. This paper presents the results of the measurements performed to characterize CITIROC tailored for the ASTRI SST-2M focal plane requirements. In particular, we investigated th…
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The Cherenkov Imaging Telescope Integrated Read Out Chip, CITIROC, is a chip adopted as the front-end of the camera at the focal plane of the imaging Cherenkov ASTRI dual-mirror small size telescope (ASTRI SST-2M) prototype. This paper presents the results of the measurements performed to characterize CITIROC tailored for the ASTRI SST-2M focal plane requirements. In particular, we investigated the trigger linearity and efficiency, as a function of the pulse amplitude. Moreover, we tested its response by performing a set of measurements using a silicon photomultiplier (SiPM) in dark conditions and under light pulse illumination. The CITIROC output signal is found to vary linearly as a function of the input pulse amplitude. Our results show that it is suitable for the ASTRI SST-2M camera.
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Submitted 31 May, 2015;
originally announced June 2015.
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The Heavy Photon Search Test Detector
Authors:
Marco Battaglieri,
Sergey Boyarinov,
Stephen Bueltmann,
Volker Burkert,
Andrea Celentano,
Gabriel Charles,
William Cooper,
Chris Cuevas,
Natalia Dashyan,
Raffaella DeVita,
Camille Desnault,
Alexandre Deur,
Hovanes Egiyan,
Latifa Elouadrhiri,
Rouven Essig,
Vitaliy Fadeyev,
Clive Field,
Arne Freyberger,
Yuri Gershtein,
Nerses Gevorgyan,
Francois-Xavier Girod,
Norman Graf,
Mathew Graham,
Keith Griffioen,
Alexander Grillo
, et al. (39 additional authors not shown)
Abstract:
The Heavy Photon Search (HPS), an experiment to search for a hidden sector photon in fixed target electroproduction, is preparing for installation at the Thomas Jefferson National Accelerator Facility (JLab) in the Fall of 2014. As the first stage of this project, the HPS Test Run apparatus was constructed and operated in 2012 to demonstrate the experiment's technical feasibility and to confirm th…
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The Heavy Photon Search (HPS), an experiment to search for a hidden sector photon in fixed target electroproduction, is preparing for installation at the Thomas Jefferson National Accelerator Facility (JLab) in the Fall of 2014. As the first stage of this project, the HPS Test Run apparatus was constructed and operated in 2012 to demonstrate the experiment's technical feasibility and to confirm that the trigger rates and occupancies are as expected. This paper describes the HPS Test Run apparatus and readout electronics and its performance. In this setting, a heavy photon can be identified as a narrow peak in the e$^+$e$^-$ invariant mass spectrum, above the trident background or as a narrow invariant mass peak with a decay vertex displaced from the production target, so charged particle tracking and vertexing are needed for its detection. In the HPS Test Run, charged particles are measured with a compact forward silicon microstrip tracker inside a dipole magnet. Electromagnetic showers are detected in a PbW0$_{4}$ crystal calorimeter situated behind the magnet, and are used to trigger the experiment and identify electrons and positrons. Both detectors are placed close to the beam line and split top-bottom. This arrangement provides sensitivity to low-mass heavy photons, allows clear passage of the unscattered beam, and avoids the spray of degraded electrons coming from the target. The discrimination between prompt and displaced e$^+$e$^-$ pairs requires the first layer of silicon sensors be placed only 10~cm downstream of the target. The expected signal is small, and the trident background huge, so the experiment requires very large statistics. Accordingly, the HPS Test Run utilizes high-rate readout and data acquisition electronics and a fast trigger to exploit the essentially 100% duty cycle of the CEBAF accelerator at JLab.
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Submitted 4 June, 2015; v1 submitted 23 June, 2014;
originally announced June 2014.
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AtmoHEAD 2013 workshop / Atmospheric Monitoring for High-Energy Astroparticle Detectors
Authors:
K. Bernlöhr,
G. Bellassai,
O. Blanch,
M. Bourgeat,
P. Bruno,
M. Buscemi,
C. Cassardo,
P. M. Chadwick,
R. Chalme-Calvet,
F. Chouza,
M. Cilmo,
M. Coco,
J. Colombi,
M. Compin,
M. K. Daniel,
R. De Los Reyes,
J. Ebr,
R. D'Elia,
C. Deil,
A. Etchegoyen,
M. Doro,
S. Ferrarese,
M. Fiorini,
LL. Font,
D. Garrido
, et al. (48 additional authors not shown)
Abstract:
A 3-day international workshop on atmospheric monitoring and calibration for high-energy astroparticle detectors, with a view towards next-generation facilities. The atmosphere is an integral component of many high-energy astroparticle detectors. Imaging atmospheric Cherenkov telescopes and cosmic-ray extensive air shower detectors are the two instruments driving the rapidly evolving fields of ver…
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A 3-day international workshop on atmospheric monitoring and calibration for high-energy astroparticle detectors, with a view towards next-generation facilities. The atmosphere is an integral component of many high-energy astroparticle detectors. Imaging atmospheric Cherenkov telescopes and cosmic-ray extensive air shower detectors are the two instruments driving the rapidly evolving fields of very-high- and ultra-high-energy astrophysics. In these instruments, the atmosphere is used as a giant calorimeter where cosmic rays and gamma rays deposit their energy and initiate EASs; it is also the medium through which the resulting Cherenkov light propagates. Uncertainties in real-time atmospheric conditions and in the fixed atmospheric models typically dominate all other systematic errors. With the improved sensitivity of upgraded IACTs such as H.E.S.S.-II and MAGIC-II and future facilities like the Cherenkov Telescope Array (CTA) and JEM-EUSO, statistical uncertainties are expected to be significantly reduced, leaving the atmosphere as the limiting factor in the determination of astroparticle spectra. Varying weather conditions necessitate the development of suitable atmospheric monitoring to be integrated in the overall instrument calibration, including Monte Carlo simulations. With expertise distributed across multiple collaborations and scientific domains, an interdisciplinary workshop is being convened to advance progress on this critical and timely topic.
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Submitted 19 March, 2014;
originally announced March 2014.
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Planning the Future of U.S. Particle Physics (Snowmass 2013): Chapter 8: Instrumentation Frontier
Authors:
M. Demarteau,
R. Lipton,
H. Nicholson,
I. Shipsey,
D. Akerib,
A. Albayrak-Yetkin,
J. Alexander,
J. Anderson,
M. Artuso,
D. Asner,
R. Ball,
M. Battaglia,
C. Bebek,
J. Beene,
Y. Benhammou,
E. Bentefour,
M. Bergevin,
A. Bernstein,
B. Bilki,
E. Blucher,
G. Bolla,
D. Bortoletto,
N. Bowden,
G. Brooijmans,
K. Byrum
, et al. (189 additional authors not shown)
Abstract:
These reports present the results of the 2013 Community Summer Study of the APS Division of Particles and Fields ("Snowmass 2013") on the future program of particle physics in the U.S. Chapter 8, on the Instrumentation Frontier, discusses the instrumentation needs of future experiments in the Energy, Intensity, and Cosmic Frontiers, promising new technologies for particle physics research, and iss…
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These reports present the results of the 2013 Community Summer Study of the APS Division of Particles and Fields ("Snowmass 2013") on the future program of particle physics in the U.S. Chapter 8, on the Instrumentation Frontier, discusses the instrumentation needs of future experiments in the Energy, Intensity, and Cosmic Frontiers, promising new technologies for particle physics research, and issues of gathering resources for long-term research in this area.
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Submitted 23 January, 2014;
originally announced January 2014.
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Characterization of EASIROC as Front-End for the readout of the SiPM at the focal plane of the Cherenkov telescope ASTRI
Authors:
D. Impiombato,
S. Giarrusso,
T. Mineo,
M. Belluso,
S. Billotta,
G. Bonanno,
O. Catalano,
A. Grillo,
G. La Rosa,
D. Marano,
G. Sottile
Abstract:
The Extended Analogue Silicon Photo-multiplier Integrated Read Out Chip, EASIROC, is a chip proposed as front-end of the camera at the focal plane of the imaging Cherenkov ASTRI SST-2M telescope prototype. This paper presents the results of the measurements performed to characterize EASIROC in order to evaluate its compliance with the ASTRI SST-2M focal plane requirements. In particular, we invest…
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The Extended Analogue Silicon Photo-multiplier Integrated Read Out Chip, EASIROC, is a chip proposed as front-end of the camera at the focal plane of the imaging Cherenkov ASTRI SST-2M telescope prototype. This paper presents the results of the measurements performed to characterize EASIROC in order to evaluate its compliance with the ASTRI SST-2M focal plane requirements. In particular, we investigated the trigger time walk and the jitter effects as a function of the pulse amplitude. The EASIROC output signal is found to vary linearly as a function of the input pulse amplitude with very low level of electronic noise and cross-talk (<1%). Our results show that it is suitable as front-end chip for the camera prototype, although, specific modifications are necessary to adopt the device in the final version of the telescope.
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Submitted 26 September, 2013;
originally announced September 2013.
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The ASTRI SST-2M Prototype: Camera and Electronics
Authors:
Osvaldo Catalano,
Salvo Giarrusso,
Giovanni La Rosa,
Maria Concetta Maccarone,
Teresa Mineo,
Francesco Russo,
Giuseppe Sottile,
Domenico Impiombato,
Giovanni Bonanno,
Massimiliano Belluso,
Sergio Billotta,
Alessandro Grillo,
Davide Marano,
Vincenzo De Caprio,
Mauro Fiorini,
Luca Stringhetti,
Salvo Garozzo,
Giuseppe Romeo
Abstract:
ASTRI is a Flagship Project financed by the Italian Ministry of Education, University and Research, and led by INAF, the Italian National Institute of Astrophysics. The primary goal of the ASTRI project is the realization of an end-to-end prototype of a Small Size Telescope for the Cherenkov Telescope Array. The prototype, named ASTRI SST-2M, is based on a completely new double mirror optics desig…
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ASTRI is a Flagship Project financed by the Italian Ministry of Education, University and Research, and led by INAF, the Italian National Institute of Astrophysics. The primary goal of the ASTRI project is the realization of an end-to-end prototype of a Small Size Telescope for the Cherenkov Telescope Array. The prototype, named ASTRI SST-2M, is based on a completely new double mirror optics design and will be equipped with a camera made of a matrix of SiPM detectors. Here we describe the ASTRI SST-2M camera concept: basic idea, detectors, electronics, current status and some results coming from experiments in lab.
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Submitted 19 July, 2013;
originally announced July 2013.
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The Site of the ASTRI SST-2M Telescope Prototype
Authors:
Maria Concetta Maccarone,
Giuseppe Leto,
Pietro Bruno,
Mauro Fiorini,
Alessandro Grillo,
Alberto Segreto,
Luca Stringhetti
Abstract:
ASTRI is a Flagship Project financed by the Italian Ministry of Education, University and Research, and led by the Italian National Institute of Astrophysics, INAF. Primary goal of the ASTRI project is the design and production of an end-to-end prototype of Small Size Telescope for the CTA (Cherenkov Telescope Array) in a dual-mirror configuration (SST-2M) equipped with a camera at the focal plane…
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ASTRI is a Flagship Project financed by the Italian Ministry of Education, University and Research, and led by the Italian National Institute of Astrophysics, INAF. Primary goal of the ASTRI project is the design and production of an end-to-end prototype of Small Size Telescope for the CTA (Cherenkov Telescope Array) in a dual-mirror configuration (SST-2M) equipped with a camera at the focal plane composed by an array of Silicon Photo-Multipliers and devoted to the investigation of the highest gamma-ray energy band. The ASTRI SST-2M prototype will be placed at the INAF M.G. Fracastoro observing station in Serra La Nave on the Etna Mountain near Catania, Italy. After the verification tests, devoted to probe the technological solutions adopted, the ASTRI SST-2M prototype will perform scientific observations on the Crab Nebula and on some of the brightest TeV sources. Here we present the Serra La Nave site, its meteorological and weather conditions, the sky darkness and visibility, and the complex of auxiliary instrumentation that will be used on site to support the calibration and science verification phase as well as the regular data reconstruction and analysis of the ASTRI SST-2M prototype.
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Submitted 19 July, 2013;
originally announced July 2013.
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The dual-mirror Small Size Telescope for the Cherenkov Telescope Array
Authors:
G. Pareschi,
G. Agnetta,
L. A. Antonelli,
D. Bastieri,
G. Bellassai,
M. Belluso,
C. Bigongiari,
S. Billotta,
B. Biondo,
G. Bonanno,
G. Bonnoli,
P. Bruno,
A. Bulgarelli,
R. Canestrari,
M. Capalbi,
P. Caraveo,
A. Carosi,
E. Cascone,
O. Catalano,
M. Cereda,
P. Conconi,
V. Conforti,
G. Cusumano,
V. De Caprio,
A. De Luca
, et al. (89 additional authors not shown)
Abstract:
In this paper, the development of the dual mirror Small Size Telescopes (SST) for the Cherenkov Telescope Array (CTA) is reviewed. Up to 70 SST, with a primary mirror diameter of 4 m, will be produced and installed at the CTA southern site. These will allow investigation of the gamma-ray sky at the highest energies accessible to CTA, in the range from about 1 TeV to 300 TeV. The telescope presente…
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In this paper, the development of the dual mirror Small Size Telescopes (SST) for the Cherenkov Telescope Array (CTA) is reviewed. Up to 70 SST, with a primary mirror diameter of 4 m, will be produced and installed at the CTA southern site. These will allow investigation of the gamma-ray sky at the highest energies accessible to CTA, in the range from about 1 TeV to 300 TeV. The telescope presented in this contribution is characterized by two major innovations: the use of a dual mirror Schwarzschild-Couder configuration and of an innovative camera using as sensors either multi-anode photomultipliers (MAPM) or silicon photomultipliers (SiPM). The reduced plate-scale of the telescope, achieved with the dual-mirror optics, allows the camera to be compact (40 cm in diameter), and low-cost. The camera, which has about 2000 pixels of size 6x6 mm^2, covers a field of view of 10°. The dual mirror telescopes and their cameras are being developed by three consortia, ASTRI (Astrofisica con Specchi a Tecnologia Replicante Italiana, Italy/INAF), GATE (Gamma-ray Telescope Elements, France/Paris Observ.) and CHEC (Compact High Energy Camera, universities in UK, US and Japan) which are merging their efforts in order to finalize an end-to-end design that will be constructed for CTA. A number of prototype structures and cameras are being developed in order to investigate various alternative designs. In this contribution, these designs are presented, along with the technological solutions under study.
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Submitted 18 July, 2013;
originally announced July 2013.
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Integrated Circuit Design in US High-Energy Physics
Authors:
G. De Geronimo,
D. Christian,
C. Bebek,
M. Garcia-Sciveres,
H. Von der Lippe,
G. Haller,
A. A. Grillo,
M. Newcomer
Abstract:
This whitepaper summarizes the status, plans, and challenges in the area of integrated circuit design in the United States for future High Energy Physics (HEP) experiments. It has been submitted to CPAD (Coordinating Panel for Advanced Detectors) and the HEP Community Summer Study 2013(Snowmass on the Mississippi) held in Minnesota July 29 to August 6, 2013. A workshop titled: US Workshop on IC De…
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This whitepaper summarizes the status, plans, and challenges in the area of integrated circuit design in the United States for future High Energy Physics (HEP) experiments. It has been submitted to CPAD (Coordinating Panel for Advanced Detectors) and the HEP Community Summer Study 2013(Snowmass on the Mississippi) held in Minnesota July 29 to August 6, 2013. A workshop titled: US Workshop on IC Design for High Energy Physics, HEPIC2013 was held May 30 to June 1, 2013 at Lawrence Berkeley National Laboratory (LBNL). A draft of the whitepaper was distributed to the attendees before the workshop, the content was discussed at the meeting, and this document is the resulting final product. The scope of the whitepaper includes the following topics: Needs for IC technologies to enable future experiments in the three HEP frontiers Energy, Cosmic and Intensity Frontiers; Challenges in the different technology and circuit design areas and the related R&D needs; Motivation for using different fabrication technologies; Outlook of future technologies including 2.5D and 3D; Survey of ICs used in current experiments and ICs targeted for approved or proposed experiments; IC design at US institutes and recommendations for collaboration in the future.
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Submitted 15 July, 2013; v1 submitted 10 July, 2013;
originally announced July 2013.
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UVSiPM: a light detector instrument based on a SiPM sensor working in single photon counting
Authors:
G. Sottile,
F. Russo,
G. Agnetta,
M. Belluso,
S. Billotta,
B. Biondo,
G. Bonanno,
O. Catalano,
S. Giarrusso,
A. Grillo,
D. Impiombato,
G. La Rosa,
M. C. Maccarone,
A. Mangano,
D. Marano,
T. Mineo,
A. Segreto,
E. Strazzeri,
M. C. Timpanaro
Abstract:
UVSiPM is a light detector designed to measure the intensity of electromagnetic radiation in the 320-900 nm wavelength range. It has been developed in the framework of the ASTRI project whose main goal is the design and construction of an end-to-end Small Size class Telescope prototype for the Cherenkov Telescope Array. The UVSiPM instrument is composed by a multipixel Silicon Photo-Multiplier det…
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UVSiPM is a light detector designed to measure the intensity of electromagnetic radiation in the 320-900 nm wavelength range. It has been developed in the framework of the ASTRI project whose main goal is the design and construction of an end-to-end Small Size class Telescope prototype for the Cherenkov Telescope Array. The UVSiPM instrument is composed by a multipixel Silicon Photo-Multiplier detector unit coupled to an electronic chain working in single photon counting mode with 10 nanosecond double pulse resolution, and by a disk emulator interface card for computer connection. The detector unit of UVSiPM is of the same kind as the ones forming the camera at the focal plane of the ASTRI prototype. Eventually, the UVSiPM instrument can be equipped with a collimator to regulate its angular aperture. UVSiPM, with its peculiar characteristics, will permit to perform several measurements both in lab and on field, allowing the absolute calibration of the ASTRI prototype.
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Submitted 13 May, 2013;
originally announced May 2013.
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Characterization of the front-end EASIROC for read-out of SiPM in the ASTRI camera
Authors:
D. Impiombato,
S. Giarrusso,
M. Belluso,
S. Bilotta,
G. Bonanno,
O. Catalano,
A. Grillo,
G. La Rosa,
D. Marano,
T. Mineo,
F. Russo,
G. Sottile
Abstract:
The design and realization of a prototype for the Small-Size class Telescopes of the Cherenkov Telescope Array is one of the cornerstones of the ASTRI project. The prototype will adopt a focal plane camera based on Silicon Photo-Multiplier sensors that coupled with a dual mirror optics configuration represents an innovative solution for the detection of Atmospheric Cherenkov light. These detectors…
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The design and realization of a prototype for the Small-Size class Telescopes of the Cherenkov Telescope Array is one of the cornerstones of the ASTRI project. The prototype will adopt a focal plane camera based on Silicon Photo-Multiplier sensors that coupled with a dual mirror optics configuration represents an innovative solution for the detection of Atmospheric Cherenkov light. These detectors can be read by the Extended Analogue Silicon Photo-Multiplier Integrated Read Out Chip (EASIROC) equipped with 32-channels. In this paper, we report some preliminary results on measurements aimed to evaluate EASIROC capability of autotriggering and measurements of the trigger time walk, jitter, DAC linearity and trigger efficiency vs the injected charge. Moreover, the dynamic range of the ASIC is also reported.
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Submitted 4 May, 2013;
originally announced May 2013.
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The Pierre Auger Observatory V: Enhancements
Authors:
The Pierre Auger Collaboration,
P. Abreu,
M. Aglietta,
E. J. Ahn,
I. F. M. Albuquerque,
D. Allard,
I. Allekotte,
J. Allen,
P. Allison,
J. Alvarez Castillo,
J. Alvarez-Muñiz,
M. Ambrosio,
A. Aminaei,
L. Anchordoqui,
S. Andringa,
T. Antičić,
A. Anzalone,
C. Aramo,
E. Arganda,
F. Arqueros,
H. Asorey,
P. Assis,
J. Aublin,
M. Ave,
M. Avenier
, et al. (471 additional authors not shown)
Abstract:
Ongoing and planned enhancements of the Pierre Auger Observatory
Ongoing and planned enhancements of the Pierre Auger Observatory
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Submitted 24 July, 2011;
originally announced July 2011.
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The Pierre Auger Observatory IV: Operation and Monitoring
Authors:
The Pierre Auger Collaboration,
P. Abreu,
M. Aglietta,
E. J. Ahn,
I. F. M. Albuquerque,
D. Allard,
I. Allekotte,
J. Allen,
P. Allison,
J. Alvarez Castillo,
J. Alvarez-Muñiz,
M. Ambrosio,
A. Aminaei,
L. Anchordoqui,
S. Andringa,
T. Antičić,
A. Anzalone,
C. Aramo,
E. Arganda,
F. Arqueros,
H. Asorey,
P. Assis,
J. Aublin,
M. Ave,
M. Avenier
, et al. (471 additional authors not shown)
Abstract:
Technical reports on operations and monitoring of the Pierre Auger Observatory
Technical reports on operations and monitoring of the Pierre Auger Observatory
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Submitted 24 July, 2011;
originally announced July 2011.
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Progress Towards a Long Sha**-Time Readout for Silicon Strips
Authors:
Jurgen Kroseberg,
Alex Grillo,
Forest Martinez-McKinney,
Gavin Nesom,
Bruce A. Schumm,
Ned Spencer,
Max Wilder
Abstract:
We report on progress in the development of the LSTFE2 prototype front-end ASIC geared towards the readout of silicon microstrip sensors in a Linear Collider detector. We also discuss progress in the design of the back-end digital architecture for this readout scheme.
We report on progress in the development of the LSTFE2 prototype front-end ASIC geared towards the readout of silicon microstrip sensors in a Linear Collider detector. We also discuss progress in the design of the back-end digital architecture for this readout scheme.
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Submitted 4 November, 2005;
originally announced November 2005.