Directional atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasma
Authors:
Ivy I. Chen,
Jennifer Solgaard,
Ryoto Sekine,
Azmain A. Hossain,
Anthony Ardizzi,
David S. Catherall,
Alireza Marandi,
James R. Renzas,
Frank Greer,
Austin J. Minnich
Abstract:
Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by optical loss arising from corrugations between poled regions and sidewall s…
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Lithium niobate (LiNbO$_3$, LN) is a ferroelectric crystal of interest for integrated photonics owing to its large second-order optical nonlinearity and the ability to impart periodic poling via an external electric field. However, on-chip device performance based on thin-film lithium niobate (TFLN) is presently limited by optical loss arising from corrugations between poled regions and sidewall surface roughness. Atomic layer etching (ALE) could potentially smooth these features and thereby increase photonic performance, but no ALE process has been reported for LN. Here, we report a directional ALE process for $x$-cut MgO-doped LN using sequential exposures of H$_2$ and SF$_6$/Ar plasmas. We observe etch rates up to $1.01 \pm 0.05$ nm/cycle with a synergy of $94$%. We also demonstrate ALE can be achieved with SF$_6$/O$_2$ or Cl$_2$/BCl$_3$ plasma exposures in place of the SF$_6$/Ar plasma step with synergies above $90$%. When combined with a wet post-process to remove redeposited compounds, the process yields a 50% decrease in surface roughness. With additional optimization to reduce the quantity of redeposited compounds, these processes could be used to smoothen surfaces of TFLN waveguides etched by physical Ar$^+$ milling, thereby increasing the performance of TFLN nanophotonic devices or enabling new integrated photonic capabilities.
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Submitted 19 January, 2024; v1 submitted 16 October, 2023;
originally announced October 2023.
Silicon Detector Arrays with Absolute Quantum Efficiency over 50% in the Far Ultraviolet for Single Photon Counting Applications
Authors:
Shouleh Nikzad,
Michael E. Hoenk,
Frank Greer,
Todd Jones,
Blake Jacquot,
Steve Monacos,
J. Blacksberg,
Erika Hamden,
David Schiminovich,
Chris Martin,
Patrick Morrissey
Abstract:
We have used Molecular Beam Epitaxy (MBE)-based delta do** technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over…
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We have used Molecular Beam Epitaxy (MBE)-based delta do** technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over 50% external QE in the far and near-ultraviolet in megapixel arrays. We have demonstrated that other device parameters such as dark current are unchanged after these processes. In this paper, we report on these results and briefly discuss the techniques and processes employed.
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Submitted 10 February, 2011;
originally announced February 2011.
