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All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance
Authors:
Jiacheng Shi,
Victor Lopez-Dominguez,
Sevdenur Arpaci,
Vinod K. Sangwan,
Farzad Mahfouzi,
**woong Kim,
Jordan G. Athas,
Mohammad Hamdi,
Can Aygen,
Charudatta Phatak,
Mario Carpentieri,
Jidong S. Jiang,
Matthew A. Grayson,
Nicholas Kioussis,
Giovanni Finocchio,
Mark C. Hersam,
Pedram Khalili Amiri
Abstract:
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR)…
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Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures were not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here we show three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.
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Submitted 23 November, 2023;
originally announced November 2023.
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The long view of triadic resonance instability in finite-width internal gravity wave beams
Authors:
K. M. Grayson,
Stuart B. Dalziel,
Andrew G. W. Lawrie
Abstract:
This paper presents our investigation into the modification of a finite-width internal gravity wave beam arising from triadic resonance instability. We present both experimental and weakly non-linear modelling to examine this instability mechanism, in which a primary wave beam generates two secondary wave beams of lower frequencies and shorter length scales. Through a versatile experimental set-up…
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This paper presents our investigation into the modification of a finite-width internal gravity wave beam arising from triadic resonance instability. We present both experimental and weakly non-linear modelling to examine this instability mechanism, in which a primary wave beam generates two secondary wave beams of lower frequencies and shorter length scales. Through a versatile experimental set-up, we examine how this instability develops over hundreds of buoyancy periods. Unlike predictions from previous zero-dimensional weakly non-linear theory, we find that the approach to a saturated equilibrium state for the triadic interactions is not monotonic; rather, the amplitudes and structures of the constituent beams continue to modulate without ever reaching a steady equilibrium. To understand this behaviour we develop a weakly non-linear approach to account for the spatio-temporal evolution of the amplitudes and structures of the beams over slow time-scales and long distances, and explore the consequences using a numerical scheme. Through this approach, we establish that the evolution of the instability is remarkably sensitive to the spatio-temporal triadic configuration for the system and how part of the observed modulations can be attributed to a competition between the linear growth rate of the secondary wave beams and the finite residence time of the triadic perturbations within the underlying primary beam.
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Submitted 29 May, 2022;
originally announced May 2022.
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Cascaded forward Brillouin lasing in a chalcogenide whispering gallery mode microresonator
Authors:
Thariq Shanavas,
Michael Grayson,
Bo Xu,
Mo Zohrabi,
Wounjhang Park,
Juliet T. Gopinath
Abstract:
We report the first observation of cascaded forward stimulated Brillouin scattering in a microresonator platform. We have demonstrated 25 orders of intramodal Stokes beams separated by a Brillouin shift of 34.5 MHz at a sub-milliwatt threshold at 1550 nm. An As$_2$S$_3$ microsphere of diameter 125 $μm$ with quality factor $1\times 10^6$ was used for this demonstration. Theoretical modeling is used…
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We report the first observation of cascaded forward stimulated Brillouin scattering in a microresonator platform. We have demonstrated 25 orders of intramodal Stokes beams separated by a Brillouin shift of 34.5 MHz at a sub-milliwatt threshold at 1550 nm. An As$_2$S$_3$ microsphere of diameter 125 $μm$ with quality factor $1\times 10^6$ was used for this demonstration. Theoretical modeling is used to support our experimental observations of Brillouin shift and threshold power. We expect our work will advance the field of forward stimulated Brillouin scattering in integrated photonics with applications in gas sensing and photonic radio frequency sources.
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Submitted 12 October, 2022; v1 submitted 13 May, 2022;
originally announced May 2022.
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Sensitivity Analysis for Optimizing Electrical Impedance Tomography Protocols
Authors:
Claire Onsager,
Chulin Wang,
Charles Costakis,
Can Aygen,
Lauren Lang,
Suzan van der Lee,
Matthew A. Grayson
Abstract:
Electrical impedance tomography (EIT) is a noninvasive imaging method whereby electrical measurements on the boundary of a conductive medium (the data) are taken according to a prescribed protocol set and inverted to map the internal conductivity (the model). This paper introduces a sensitivity analysis method and corresponding inversion and protocol optimization that generalizes the criteria for…
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Electrical impedance tomography (EIT) is a noninvasive imaging method whereby electrical measurements on the boundary of a conductive medium (the data) are taken according to a prescribed protocol set and inverted to map the internal conductivity (the model). This paper introduces a sensitivity analysis method and corresponding inversion and protocol optimization that generalizes the criteria for tomographic inversion to minimize the model-space dimensionality and maximize data importance. Sensitivity vectors, defined as rows of the Jacobian matrix in the linearized forward problem, are used to map targeted conductivity features from model-space to data-space, and a volumetric outer-product of these vectors in model-space called the sensitivity parallelotope volume provides a figure-of-merit for data protocol optimization. Orthonormal basis functions that accurately constrain the model-space to features of interest can be defined from a priori information. By increasing the contact number to expand the number of possible measurements Dmax, and by reducing the model-space to a minimal number M0 of basis functions that describe only the features of interest, the M0 << Dmax sensitivity vectors of greatest length and maximal orthogonality that span this model-space can be identified. The reduction in model-space dimensionality accelerates the inversion by several orders of magnitude, and the enhanced sensitivity can tolerate noise levels up to 1,000 times larger than standard protocols.
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Submitted 18 November, 2021; v1 submitted 2 November, 2021;
originally announced November 2021.
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Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements
Authors:
Sevdenur Arpaci,
Victor Lopez-Dominguez,
Jiacheng Shi,
Luis Sánchez-Tejerina,
Francesca Garesci,
Chulin Wang,
Xueting Yan,
Vinod K. Sangwan,
Matthew Grayson,
Mark C. Hersam,
Giovanni Finocchio,
Pedram Khalili Amiri
Abstract:
There is accelerating interest in develo** memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bil…
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There is accelerating interest in develo** memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn$_3$/Pt devices. A six-terminal double-cross device is constructed, with an IrMn$_3$ pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn$_3$ after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn$_3$ pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.
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Submitted 5 May, 2021;
originally announced May 2021.
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Generalized four-point characterization method for resistive and capacitive contacts
Authors:
Brian S. Kim,
Wang Zhou,
Yash D. Shah,
Chuanle Zhou,
N. Işık,
M. Grayson
Abstract:
In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby…
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In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby four-point characterization can be performed. The technique is demonstrated with a discrete element test sample over a wide frequency range using lock-in measurement techniques from 1 Hz - 100 kHz. The data fit well with a circuit simulation of the entire measurement system. A high impedance preamplifier input stage gives best results, since lock-in input impedances may differ from manufacturer specifications. The analysis presented here establishes the utility of capacitive contacts for four-point characterizations at low frequency.
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Submitted 25 August, 2011;
originally announced August 2011.
