Quantum Interference Enhances the Performance of Single-Molecule Transistors
Authors:
Zhixin Chen,
Iain M. Grace,
Steffen L. Woltering,
Lina Chen,
Alex Gee,
Jonathan Baugh,
G. Andrew D. Briggs,
Lapo Bogani,
Jan A. Mol,
Colin J. Lambert,
Harry L. Anderson,
James O. Thomas
Abstract:
An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device…
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An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low switching ratios and operating frequencies, combined with large subthreshold swings.1 The usual strategy to mitigate quantum effects has been to increase device complexity, but theory shows that if quantum effects are exploited correctly, they can simultaneously lower energy consumption and boost device performance.2-6 Here, we demonstrate experimentally how the performance of molecular transistors can be improved when the resistive channel contains two destructively-interfering waves. We use a zinc-porphyrin coupled to graphene electrodes in a three-terminal transistor device to demonstrate a >104 conductance-switching ratio, a subthreshold swing at the thermionic limit, a > 7 kHz operating frequency, and stability over >105 cycles. This performance is competitive with the best nanoelectronic transistors. We fully map the antiresonance interference features in conductance, reproduce the behaviour by density functional theory calculations, and trace back this high performance to the coupling between molecular orbitals and graphene edge states. These results demonstrate how the quantum nature of electron transmission at the nanoscale can enhance, rather than degrade, device performance, and highlight directions for future development of miniaturised electronics.
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Submitted 17 April, 2023;
originally announced April 2023.
Electrical molecular switch addressed by chemical stimuli
Authors:
H. Audi,
Y. Viero,
N. Alwhaibi,
Z. Chen,
M. Iazykov,
A. Heynderickx,
F. Xiao,
D. Guerin,
C Krzeminski,
I. M. Grace,
C. J. Lambert,
O. Siri,
D. Vuillaume,
S Lenfant,
H. Klein
Abstract:
We demonstrate that the conductance switching of benzo-bis(imidazole) molecules upon protonation depends on the lateral functional groups. The protonated H-substituted molecule shows a higher conductance than the neutral one (Gpro>Gneu), while the opposite (Gneu>Gpro) is observed for a molecule laterally functionalized by amino-phenyl groups. These results are demonstrated at various scale lengths…
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We demonstrate that the conductance switching of benzo-bis(imidazole) molecules upon protonation depends on the lateral functional groups. The protonated H-substituted molecule shows a higher conductance than the neutral one (Gpro>Gneu), while the opposite (Gneu>Gpro) is observed for a molecule laterally functionalized by amino-phenyl groups. These results are demonstrated at various scale lengths : self-assembled monolayer, tiny nanodot-molecule junction and single molecules. From ab-initio theoretical calculations, we conclude that for the H-substituted molecule, the result Gpro>Gneu is correctly explained by a reduction of the LUMO-HOMO gap, while for the amino-phenyl functionnalized molecule, the result Gneu>Gpro is consistent with a shift of HOMO, which reduces the density of states at the Fermi energy.
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Submitted 30 April, 2020;
originally announced May 2020.
