Advanced Analytics on 3D X-ray Tomography of Irradiated Silicon Carbide Claddings
Authors:
Fei Xu,
Joshua J. Kane,
Peng Xu,
Jason L. Schulthess,
Sean Gonderman,
Nikolaus L. Cordesa
Abstract:
Silicon Carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuels. To enable an improved understanding of SiC-SiC composite performance, the development of non-destructive evaluation techniques to assess critical defects is needed. Three-dimensional (3D) X-ray imaging, also referred to as X-ray computed tomography…
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Silicon Carbide (SiC) ceramic matrix composite (CMC) cladding is currently being pursued as one of the leading candidates for accident-tolerant fuels. To enable an improved understanding of SiC-SiC composite performance, the development of non-destructive evaluation techniques to assess critical defects is needed. Three-dimensional (3D) X-ray imaging, also referred to as X-ray computed tomography (CT), is a non-destructive, data-rich characterization technique that can provide surface and subsurface spatial information. This paper discusses the design and implementation of a fully automatic workflow to detect and analyze SiC-SiC defects using image processing techniques on 3D X-ray images. The workflow consists of four processing blocks, including data preparation, void/crack detection, visualization, and analysis. In this work, three SiC samples (two irradiated and one unirradiated) provided by General Atomics are investigated. The irradiated samples were exposed in a way that was expected to induce cracking, and indeed, the automated workflow developed in this work was able to successfully identify and characterize the crack formation in the irradiated samples while detecting no observed cracking in the unirradiated sample. These results demonstrate the value of automated XCT tools to better understand the damage and damage propagation in SiC-SiC structures for nuclear applications.
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Submitted 5 March, 2023;
originally announced March 2023.
Evaluation of silicon carbide as a divertor armor material in DIII-D H-mode discharges
Authors:
T. Abrams,
S. Bringuier,
D. M. Thomas,
G. Sinclair,
S. Gonderman,
L. Holland,
D. L. Rudakov,
R. S. Wilcox,
E. A. Unterberg,
F. Scotti
Abstract:
Silicon carbide (SiC) represents a promising but largely untested plasma-facing material (PFM) for next-step fusion devices. In this work, an analytic mixed-material erosion model is developed by calculating the physical (via SDTrimSP) and chemical (via empirical scalings) sputtering yield from SiC, Si, and C. The Si content in the near-surface SiC layer is predicted to increase during D plasma bo…
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Silicon carbide (SiC) represents a promising but largely untested plasma-facing material (PFM) for next-step fusion devices. In this work, an analytic mixed-material erosion model is developed by calculating the physical (via SDTrimSP) and chemical (via empirical scalings) sputtering yield from SiC, Si, and C. The Si content in the near-surface SiC layer is predicted to increase during D plasma bombardment due to more efficient physical and chemical sputtering of C relative to Si. Silicon erosion from SiC thereby occurs primarily from sputtering of the enriched Si layer, rather than directly from the SiC itself. SiC coatings on ATJ graphite, manufactured via chemical vapor deposition, were exposed to repeated H-mode plasma discharges in the DIII-D tokamak to test this model. The qualitative trends from analytic modeling are reproduced by the experimental measurements, obtained via spectroscopic inference using the S/XB method. Quantitatively the model slightly under-predicts measured erosion rates, which is attributed to uncertainties in the ion impact angle distribution, as well as the effect of edge-localized modes. After exposure, minimal changes to the macroscopic or microscopic surface morphology of the SiC coatings were observed. Compositional analysis reveals Si enrichment of about 10%, in line with expectations from the erosion model. Extrapolating to a DEMO-type device, an order-of-magnitude decrease in impurity sourcing, and up to a factor of 2 decrease in impurity radiation, is expected with SiC walls, relative to graphite, if low C plasma impurity content can be achieved. These favorable erosion properties motivate further investigations of SiC as a low-Z, non-metallic PFM.
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Submitted 8 April, 2021;
originally announced April 2021.
