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Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy
Authors:
Christian Pederson,
Rajiv Giridharagopal,
Fang Zhao,
Scott T. Dunham,
Yevgeny Raitses,
David S. Ginger,
Kai-Mei C. Fu
Abstract:
Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atm…
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Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atmosphere using conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). We correlate these scanning probe measurements with optical spectroscopy of the nitrogen-vacancy and silicon-vacancy centers created via implantation and annealing 15-25 nm beneath the diamond surface. The observed charge state of the defects as a function of optical exposure demonstrates that laser oxidation provides a way to precisely tune the Fermi level over a range of at least 2.00 eV. We also observe a significantly larger oxidation rate for implanted surfaces compared to unimplanted surfaces under ambient conditions. Combined with knowledge of the electron affinity of a surface, these results suggest KPFM is a powerful, high-spatial resolution technique to advance surface Fermi level engineering for charge stabilization of quantum defects.
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Submitted 27 September, 2023;
originally announced September 2023.
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Kinetic Suppression of Photoinduced Halide Migration in Wide Bandgap Perovskites via Surface Passivation
Authors:
Farhad Akrami,
Fangyuan Jiang,
Rajiv Giridharagopal,
David S. Ginger
Abstract:
In this work, we study the kinetics of photoinduced halide migration in FA$_{0.8}$Cs$_{0.2}$Pb(I$_{0.8}$Br$_{0.2}$)$_3$ wide (~1.69 eV) bandgap perovskites and show halide migration slows down following surface passivation with (3-aminopropyl) trimethoxysilane (APTMS). We use scanning Kelvin probe microscopy (SKPM) to probe the contact potential difference (CPD) shift under illumination, and the k…
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In this work, we study the kinetics of photoinduced halide migration in FA$_{0.8}$Cs$_{0.2}$Pb(I$_{0.8}$Br$_{0.2}$)$_3$ wide (~1.69 eV) bandgap perovskites and show halide migration slows down following surface passivation with (3-aminopropyl) trimethoxysilane (APTMS). We use scanning Kelvin probe microscopy (SKPM) to probe the contact potential difference (CPD) shift under illumination, and the kinetics of surface potential relaxation in the dark. Our results show APTMS-passivated perovskites exhibit a smaller CPD shift under illumination, and a slower surface potential relaxation in the dark. We compare the evolution of the photoluminescence spectra of APTMS-passivated and unpassivated perovskites under illumination. We find that APTMS-passivated perovskites exhibit more than 5 times slower photoluminescence redshift, consistent with the slower surface potential relaxation as observed by SKPM. These observations provide evidence for kinetic suppression of photoinduced halide migration in APTMS-passivated samples, likely due to reduced halide vacancy densities, opening avenues to more efficient and stable devices.
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Submitted 11 September, 2023;
originally announced September 2023.
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Architecture Optimization Dramatically Improves Reverse Bias Stability in Perovskite Solar Cells: A Role of Polymer Hole Transport Layers
Authors:
Fangyuan Jiang,
Yangwei Shi,
Tanka R. Rana,
Daniel Morales,
Isaac Gould,
Declan P. McCarthy,
Joel Smith,
Grey Christoforo,
Hannah Contreras,
Stephen Barlow,
Aditya D. Mohite,
Henry Snaith,
Seth R. Marder,
J. Devin MacKenzie,
Michael D. McGehee,
David S. Ginger
Abstract:
We report that device architecture engineering has a substantial impact on the reverse bias instability that has been reported as a critical issue in commercializing perovskite solar cells. We demonstrate breakdown voltages exceeding -15 V in typical pin structured perovskite solar cells via two steps: i) using polymer hole transporting materials; ii) using a more electrochemically stable gold ele…
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We report that device architecture engineering has a substantial impact on the reverse bias instability that has been reported as a critical issue in commercializing perovskite solar cells. We demonstrate breakdown voltages exceeding -15 V in typical pin structured perovskite solar cells via two steps: i) using polymer hole transporting materials; ii) using a more electrochemically stable gold electrode. While device degradation can be exacerbated by higher reverse bias and prolonged exposure, our as-fabricated perovskite solar cells completely recover their performance even after stressing at -7 V for 9 hours both in the dark and under partial illumination. Following these observations, we systematically discuss and compare the reverse bias driven degradation pathways in perovskite solar cells with different device architectures. Our model highlights the role of electrochemical reaction rates and species in dictating the reverse bias stability of perovskite solar cells.
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Submitted 15 August, 2023;
originally announced August 2023.
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Why accumulation mode organic electrochemical transistors turn off much faster than they turn on
Authors:
Jiajie Guo,
Shinya E. Chen,
Rajiv Giridharagopa,
Connor G. Bischak,
Jonathan W. Onorato,
Kangrong Yan,
Ziqiu Shen,
Chang-Zhi Li,
Christine K. Luscombe,
David S. Ginger
Abstract:
Understanding the factors underpinning device switching times is crucial for the implementation of organic electrochemical transistors (OECTs) in neuromorphic computing and real-time sensing applications. Existing models of device operation cannot explain the experimental observations that turn-off times are generally much faster than turn-on times in accumulation mode OECTs. Through operando opti…
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Understanding the factors underpinning device switching times is crucial for the implementation of organic electrochemical transistors (OECTs) in neuromorphic computing and real-time sensing applications. Existing models of device operation cannot explain the experimental observations that turn-off times are generally much faster than turn-on times in accumulation mode OECTs. Through operando optical microscopy, we image the local do** level of the transistor channel and show that device turn-on occurs in two stages, while turn-off occurs in one stage. We attribute the faster turn-off to a combination of engineering as well as physical and chemical factors including channel geometry, differences in do** and dedo** kinetics, and the physical phenomena of carrier density-dependent mobility. We show that ion transport is limiting the device operation speed in our model devices. Our study provides insights into the kinetics of OECTs and guidelines for engineering faster OECTs.
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Submitted 1 May, 2023;
originally announced May 2023.
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Surface Passivation Suppresses Local Ion Motion in Halide Perovskites
Authors:
Justin Pothoof,
Robert J. E. Westbrook,
Rajiv Giridharagopal,
Madeleine D. Breshears,
David S. Ginger
Abstract:
We use scanning probe microscopy to study ion migration in the formamidinium (FA)-containing halide perovskite semiconductor $Cs_{0.22}FA_{0.78}Pb(I_{0.85}Br_{0.15})_3$ in the presence and absence of chemical surface passivation. We measure the evolving contact potential difference (CPD) using scanning Kelvin probe microscopy (SKPM) following voltage poling. We find that ion migration leads to a ~…
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We use scanning probe microscopy to study ion migration in the formamidinium (FA)-containing halide perovskite semiconductor $Cs_{0.22}FA_{0.78}Pb(I_{0.85}Br_{0.15})_3$ in the presence and absence of chemical surface passivation. We measure the evolving contact potential difference (CPD) using scanning Kelvin probe microscopy (SKPM) following voltage poling. We find that ion migration leads to a ~100 mV shift in the CPD of control films after poling with 3V for only a few seconds. Moreover, we find that ion migration is heterogeneous, with domain interfaces leading to a larger shift in the CPD. Application of (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator further leads to 5-fold reduction in the CPD shift from ~100 meV to ~20 meV. We use hyperspectral microscopy to show that APTMS-treated perovskite films undergo less photoinduced halide migration than control films. We interpret these results as due to a reduction in halide vacancy concentration due to passivation with APTMS.
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Submitted 11 April, 2023;
originally announced April 2023.
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Resolving nonlinear recombination dynamics in semiconductors via ultrafast excitation correlation spectroscopy: Photoluminescence versus photocurrent detection
Authors:
Esteban Rojas-Gatjens,
Kaila Yallum,
Yangwei Shi,
Yulong Zheng,
Tyler Bills,
Carlo Andrea Riccardo Perini,
Juan-Pablo Correa-Baena,
David S. Ginger,
Natalie Banerji,
Carlos Silva-Acuña
Abstract:
We explore the application of excitation correlation spectroscopy to detect nonlinear photophysical dynamics in two distinct semiconductor classes through time-integrated photoluminescence and photocurrent measurements. In this experiment, two variably delayed femtosecond pulses excite the semiconductor, and the time-integrated photoluminescence or photocurrent component arising from the nonlinear…
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We explore the application of excitation correlation spectroscopy to detect nonlinear photophysical dynamics in two distinct semiconductor classes through time-integrated photoluminescence and photocurrent measurements. In this experiment, two variably delayed femtosecond pulses excite the semiconductor, and the time-integrated photoluminescence or photocurrent component arising from the nonlinear dynamics of the populations induced by each pulse is measured as a function of inter-pulse delay by phase-sensitive detection with a lock-in amplifier. We focus on two limiting materials systems with contrasting optical properties: a prototypical lead-halide perovskite (LHP) solar cell, in which primary photoexcitations are charge photocarriers, and a single-component organic-semiconductor diode, which features Frenkel excitons as primary photoexcitations. The photoexcitation dynamics perceived by the two detection schemes in these contrasting systems are distinct. Nonlinear-dynamic contributions in the photoluminescence detection scheme arise from contributions to radiative recombination in both materials systems, while photocurrent arises directly in the LHP but indirectly following exciton dissociation in the organic system. Consequently, the basic photophysics of the two systems are reflected differently when comparing measurements with the two detection schemes.
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Submitted 1 April, 2023;
originally announced April 2023.
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(3-Aminopropyl)trimethoxysilane Surface Passivation Improves Perovskite Solar Cell Performance by Reducing Surface Recombination Velocity
Authors:
Yangwei Shi,
Esteban Rojas-Gatjens,
Jian Wang,
Justin Pothoof,
Rajiv Giridharagopal,
Kevin Ho,
Fangyuan Jiang,
Margherita Taddei,
Zhaoqing Yang,
Carlos Silva-Acuña,
David S. Ginger
Abstract:
We demonstrate reduced surface recombination velocity (SRV) and enhanced power-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solar cells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator. We show the APTMS serves to passivate defects at the perovskite surface, while also decoupling the perovskite from detrimental interactions at the C60 interface. We me…
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We demonstrate reduced surface recombination velocity (SRV) and enhanced power-conversion efficiency (PCE) in mixed-cation mixed-halide perovskite solar cells by using (3-aminopropyl)trimethoxysilane (APTMS) as a surface passivator. We show the APTMS serves to passivate defects at the perovskite surface, while also decoupling the perovskite from detrimental interactions at the C60 interface. We measure a SRV of ~125 + 14 cm/s, and a concomitant increase of ~100 meV in quasi-Fermi level splitting in passivated devices compared to the controls. We use time-resolved photoluminescence and excitation-correlation photoluminescence spectroscopy to show that APTMS passivation effectively suppresses non-radiative recombination. We show that APTMS improves both the fill factor and open-circuit voltage (VOC), increasing VOC from 1.03 V for control devices to 1.09 V for APTMS-passivated devices, which leads to PCE increasing from 15.90% to 18.03%. We attribute enhanced performance to reduced defect density or suppressed nonradiative recombination and low SRV at the perovskite/transporting layers interface.
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Submitted 29 September, 2022;
originally announced September 2022.
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Ethylenediamine Addition Improves Performance and Suppresses Phase Instabilities in Mixed-Halide Perovskites
Authors:
Margherita Taddei,
Joel A. Smith,
Benjamin M. Gallant,
Suer Zhou,
Robert J. E. Westbrook,
Yangwei Shi,
Jian Wang,
James N. Drysdale,
Declan P. McCarthy,
Stephen Barlow,
Seth R. Marder,
Henry J. Snaith,
David S. Ginger
Abstract:
We show that adding ethylenediamine (EDA) to perovskite precursor solution improves the photovoltaic device performance and material stability of high-bromide-content, methylammonium-free, formamidinium cesium lead halide perovskites FA1-xCsxPb(I1-yBry)3 which are currently of interest for perovskite-on-Si tandem solar cells. Using spectroscopy and hyperspectral microscopy, we show that the additi…
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We show that adding ethylenediamine (EDA) to perovskite precursor solution improves the photovoltaic device performance and material stability of high-bromide-content, methylammonium-free, formamidinium cesium lead halide perovskites FA1-xCsxPb(I1-yBry)3 which are currently of interest for perovskite-on-Si tandem solar cells. Using spectroscopy and hyperspectral microscopy, we show that the additive improves film homogeneity and suppresses the phase instability that is ubiquitous in high-Br perovskite formulations, producing films that remain stable for over 100 days in ambient conditions. With the addition of 1 mol% EDA we demonstrate 1.69 eV-gap perovskite single-junction p-i-n devices with a VOC of 1.22 V, and a champion maximum power point tracked power conversion efficiency of 18.8%, comparable to the best reported methylammonium-free perovskites. Using nuclear magnetic resonance (NMR) spectroscopy and X-ray diffraction techniques, we show that EDA reacts with FA+ in solution, rapidly and quantitatively forming imidazolinium cations. It is the presence of imidazolinium during crystallization which drives the improved perovskite thin-film properties.
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Submitted 29 September, 2022;
originally announced September 2022.
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Dimethylammonium additives alter both vertical and lateral composition in halide perovskite semiconductors
Authors:
Sarthak Jariwala,
Rishi Kumar,
Giles E. Eperon,
Yangwei Shi,
David Fenning,
David S. Ginger
Abstract:
Adding a large A-site cation, such as dimethylammonium (DMA), to the perovskite growth solution has been shown to improve performance and long-term operational stability of halide perovskite solar cells. To better understand the origins of these improvements, we explore the changes in film structure, composition, and optical properties of a formamidinium (FA), Cs, Pb, mixed halide perovskite follo…
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Adding a large A-site cation, such as dimethylammonium (DMA), to the perovskite growth solution has been shown to improve performance and long-term operational stability of halide perovskite solar cells. To better understand the origins of these improvements, we explore the changes in film structure, composition, and optical properties of a formamidinium (FA), Cs, Pb, mixed halide perovskite following addition of DMA to the perovskite growth solution in the ratio DMA0.1FA0.6Cs0.3Pb(I0.8Br0.2)3. Using time-of-flight secondary-ion mass spectrometry (TOF-SIMS) we show that DMA is indeed incorporated into the perovskite, with a higher DMA concentration at the surface. Using a combination of PL microscopy and photo-induced force microscopy-based (PiFM) nanoinfrared (nanoIR), we demonstrate that incorporating DMA into the film leads to increased local heterogeneity in the local bandgap, and clustering of the local formamidinium (CH5N2+) composition. In addition, using nano-X-ray diffraction, we demonstrate that DMA incorporation also alters the local structural composition by changing the local d-spacing distribution and grain size. Our results suggest that compositional variations in the organic cations at the A-site drive the structural heterogeneity observed in case of DMA incorporated films. Our results also suggest that while current-DMA-additive based approaches do have benefits to operational stability and device performance, process optimization to achieve local compositional and structural homogeneity could further boost both of these gains in performance, bringing further gains to solar cells using DMA additives.
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Submitted 21 October, 2021;
originally announced October 2021.
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Imaging graphene moiré superlattices via scanning Kelvin probe microscopy
Authors:
Junxi Yu,
Rajiv Giridharagopal,
Yuhao Li,
Kaichen Xie,
Jiangyu Li,
Ting Cao,
Xiaodong Xu,
David S. Ginger
Abstract:
Moiré superlattices in van der Waals heterostructures are gaining increasing attention because they offer new opportunities to tailor and explore unique electronic phenomena when stacking 2D materials with small twist angles. Here, we reveal local surface potentials associated with stacking domains in twisted double bilayer graphene (TDBG) moiré superlattices. Using a combination of both lateral P…
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Moiré superlattices in van der Waals heterostructures are gaining increasing attention because they offer new opportunities to tailor and explore unique electronic phenomena when stacking 2D materials with small twist angles. Here, we reveal local surface potentials associated with stacking domains in twisted double bilayer graphene (TDBG) moiré superlattices. Using a combination of both lateral Piezoresponse Force Microscopy (LPFM) and Scanning Kelvin Probe Microscopy (SKPM), we distinguish between Bernal (ABAB) and rhombohedral (ABCA) stacked graphene and directly correlate these stacking configurations with local surface potential. We find that the surface potential of the ABCA domains is ~15 mV higher (smaller work function) than that of the ABAB domains. First-principles calculations based on density functional theory further show that the different work functions between ABCA and ABAB domains arise from the stacking dependent electronic structure. We show that, while the moiré superlattice visualized by LPFM can change with time, imaging the surface potential distribution via SKPM appears more stable, enabling the map** of ABAB and ABCA domains without tip-sample contact-induced effects. Our results provide a new means to visualize and probe local domain stacking in moiré superlattices along with its impact on electronic properties.
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Submitted 17 February, 2021;
originally announced February 2021.
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Approaching the limits of optoelectronic performance in mixed cation mixed halide perovskites by controlling surface recombination
Authors:
Sarthak Jariwala,
Sven Burke,
Sean Dunfield,
Clayton Shallcross,
Margherita Taddei,
Jian Wang,
Giles E. Eperon,
Neal R. Armstrong,
Joseph J. Berry,
David S. Ginger
Abstract:
We demonstrate the critical role of surface recombination in mixed-cation, mixed-halide perovskite, FA0.83Cs0.17Pb(I0.85Br0.15)3. By passivating non-radiative defects with the polymerizable Lewis base (3-aminopropyl)trimethoxysilane (APTMS) we transform these thin films. We demonstrate average minority carrier lifetimes > 4 μs, nearly single exponential monomolecular PL decays, and concomitantly h…
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We demonstrate the critical role of surface recombination in mixed-cation, mixed-halide perovskite, FA0.83Cs0.17Pb(I0.85Br0.15)3. By passivating non-radiative defects with the polymerizable Lewis base (3-aminopropyl)trimethoxysilane (APTMS) we transform these thin films. We demonstrate average minority carrier lifetimes > 4 μs, nearly single exponential monomolecular PL decays, and concomitantly high external photoluminescence quantum efficiencies (>20%, corresponding to ~97% of the maximum theoretical quasi-Fermi-level splitting) at low excitation fluence. We confirm both the composition and valence band edge position of the FA0.83Cs0.17Pb(I0.85Br0.15)3 perovskite using multi-institution, cross-validated, XPS and UPS measurements. We extend the APTMS surface passivation to higher bandgap double cation (FA,Cs) compositions (1.7 eV, 1.75 eV and 1.8 eV) as well as the widely used triple cation (FA,MA,Cs) composition and observe significant PL and PL lifetime improvements after surface passivation. Finally, we demonstrate that the average surface recombination velocity (SRV) decreases from ~1000 cm/s to ~10 cm/s post APTMS passivation for FA0.83Cs0.17Pb(I0.85Br0.15)3. Our results demonstrate that surface-mediated recombination is the primary non-radiative loss pathway in MA-free mixed-cation mixed-halide films with a range of different bandgaps, which is a problem observed for a wide range of perovskite active layers and reactive electrical contacts. This study indicates that surface passivation and contact engineering will enable near-theoretical device efficiencies with these materials.
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Submitted 6 June, 2020;
originally announced June 2020.
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Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V
Authors:
Yuancai Gong,
Yifan Zhang,
Erin Jedlicka,
Rajiv Giridharagopal,
James A. Clark,
Weibo Yan,
Chuanyou Niu,
Ruichan Qiu,
**g**g Jiang,
Shaotang Yu,
San** Wu,
Hugh W. Hillhouse,
David S. Ginger,
Wei Huang,
Hao Xin
Abstract:
The limiting factor preventing kesterite (CZTSSe) thin film solar cell performance further improvement is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345V for the current world record device with an efficiency of 12.6%. In this work, SnCl4 and SnCl2_2H2O are respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZ…
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The limiting factor preventing kesterite (CZTSSe) thin film solar cell performance further improvement is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345V for the current world record device with an efficiency of 12.6%. In this work, SnCl4 and SnCl2_2H2O are respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZTSSe solar cells. Different complexations of tin compounds with thiourea and DMSO lead to different reaction pathways from solution to absorber material and thus dramatic difference in photovoltaic performance. The coordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S in the precursor film, which converted to selenides first and then fused to CZTSSe, resulting in poor film quality and device performance. The highest efficiency obtained from this film is 8.84% with a Voc,def of 0.391V. The coordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTS phase in the precursor film which directed converted to CZTSSe during selenization, resulting in compositional uniform absorber and high device performance. A device with active area efficiency 12.2% and a Voc,def of 0.344 V was achieved from Sn4+ solution processed absorber. Furthermore, CZTSSe/CdS heterojunction heat treatment (JHT) significantly improved Sn4+ device performance but had slightly negative effect on Sn2+ device. A champion CZTSSe solar cell with a total area efficiency of 12.4% (active are efficiency 13.6%) and low Voc,def of 0.297 V was achieved from Sn4+ solution. Our results demonstrate the preformed uniform kesterite phase enabled by Sn4+ precursor is the key in achieving highly efficient kesterite absorber material. The lowest Voc-def and high efficiency achieved here shines new light on the future of kesterite solar cell.
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Submitted 22 May, 2020;
originally announced May 2020.
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A Reversible Structural Phase Transition by Electrochemical Ion Injection into a Conjugated Polymer
Authors:
Connor G. Bischak,
Lucas Q. Flagg,
Kangrong Yan,
Tahir Rehman,
Daniel W. Davies,
Ramsess J. Quezada,
Jonathan W. Onorato,
Christine K. Luscombe,
Ying Diao,
Chang-Zhi Li,
David S. Ginger
Abstract:
We find that conjugated polymers can undergo reversible structural phase transitions during electrochemical oxidation and ion injection. We study poly[2,5-bis(thiophenyl)-1,4-bis(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)benzene] (PB2T-TEG), a conjugated polymer with glycolated side chains. Using grazing incidence wide angle X-ray scattering (GIWAXS), we show that, in contrast to previously known polyme…
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We find that conjugated polymers can undergo reversible structural phase transitions during electrochemical oxidation and ion injection. We study poly[2,5-bis(thiophenyl)-1,4-bis(2-(2-(2-methoxyethoxy)ethoxy)ethoxy)benzene] (PB2T-TEG), a conjugated polymer with glycolated side chains. Using grazing incidence wide angle X-ray scattering (GIWAXS), we show that, in contrast to previously known polymers, this polymer switches between two structurally distinct crystalline phases associated with electrochemical oxidation/reduction in an aqueous electrolyte. Importantly, we show that this unique phase change behavior has important physical consequences for ion transport. Notably, using moving front experiments visualized by both optical microscopy and super-resolution photoinduced force microscopy (PiFM), we show that a propagating ion front in PB2T-TEG exhibits non-Fickian transport, retaining a sharp step-edge profile, in stark contrast to the Fickian diffusion more commonly observed. This structural phase transition is reminiscent of those accompanying ion uptake in inorganic materials like LiFePO$_{4}$. We propose that engineering similar properties in future conjugated polymers may enable the realization of new materials with superior performance in electrochemical energy storage or neuromorphic memory applications.
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Submitted 14 October, 2019;
originally announced October 2019.
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Ion exchange gels enhance organic electrochemical transistor performance in aqueous solution
Authors:
Connor G. Bischak,
Lucas Q. Flagg,
David S. Ginger
Abstract:
Conjugated polymer-based organic electrochemical transistors (OECTs) are being studied for applications ranging from biochemical sensing to neural interfaces. While new conjugated polymers are being developed that can interface digital electronics with the aqueous chemistry of life, the vast majority of high-performance, high-mobility organic transistor materials developed over the past decades ar…
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Conjugated polymer-based organic electrochemical transistors (OECTs) are being studied for applications ranging from biochemical sensing to neural interfaces. While new conjugated polymers are being developed that can interface digital electronics with the aqueous chemistry of life, the vast majority of high-performance, high-mobility organic transistor materials developed over the past decades are extremely poor at taking up biologically-relevant ions. Here we incorporate an ion exchange gel into an OECT, demonstrating that this structure is capable of taking up biologically-relevant ions from solution and injecting larger, more hydrophobic ions into the underlying polymer semiconductor active layer in multiple hydrophobic conjugated polymers. Using poly[2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene] (PBTTT) as a model semiconductor active layer and a blend of the ionic liquid 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (BMIM TFSI) and poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) as the ion exchange gel, we demonstrate more than a four order of magnitude improvement in OECT device transconductance and a one hundred-fold increase in ion injection kinetics. We demonstrate the ability of the ion exchange gel OECT to record biological signals by measuring the action potentials of a Venus flytrap plant. These results show the possibility of using interface engineering to open up a wider palette of organic semiconductor materials as OECTs that can be gated by aqueous solutions.
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Submitted 29 September, 2019;
originally announced September 2019.