-
Impact of Do** and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
Authors:
D. Favero,
C. De Santi,
K. Mukherjee,
M. Borga,
K. Geens,
U. Chatterjee,
B. Bakeroot,
S. Decoutere,
F. Rampazzo,
G. Meneghesso,
E. Zanoni,
M. Meneghini
Abstract:
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk do** (6E18 Si/cc, 6E17 Si/c…
▽ More
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of breakdown performance of planar GaN-on-Si MOS capacitors. The analysis is carried out on capacitors processed on different GaN bulk do** (6E18 Si/cc, 6E17 Si/cc and 2.5E18 Mg/cc, p-type), different structures (planar, trench-like) and different geometries (area, perimeter and shape). We demonstrate that (i) capacitors on p-GaN have better breakdown performance; (ii) the presence of a trench structure significantly reduces breakdown capabilities; (iii) breakdown voltage is dependent on area, with a decreasing robustness for increasing dimensions; (iv) breakdown voltage is independent of shape (rectangular, circular). TCAD simulations, in agreement with the measurements, illustrate the electric field distribution near breakdown and clarify the results obtained experimentally.
△ Less
Submitted 20 October, 2022; v1 submitted 19 October, 2022;
originally announced October 2022.
-
Study and characterization of GaN MOS capacitors: planar versus trench topographies
Authors:
K. Mukherjee,
C. De Santi,
S. You,
K. Geens,
M. Borga,
S. Decoutere,
B. Bakeroot,
P. Diehle,
F. Altmann,
G. Meneghesso,
E. Zanoni,
M. Meneghini
Abstract:
Develo** high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of t…
▽ More
Develo** high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of planar etching treatment and trench formation on the performance of GaN-based MOS (metal oxide semiconductor) stacks. The results demonstrate that (i) blanket etching the GaN surface does not degrade the robustness of the deposited dielectric layer; (ii) the addition of the trench etch, while improving reproducibility, results in a decrease of breakdown performance compared to the planar structures. (iii) for the trench structures, the voltage for a 10 years lifetime is still above 20 V, indicating a good robustness. (iv) To review the trap** performance across the metal-dielectric-GaN stack, forward-reverse capacitance-voltage measurements with and without stress and photo-assistance are performed. Overall, as-grown planar capacitors devoid of prior etching steps show lowest trap**, while trench capacitors have higher interface trap**, and bulk trap** comparable to the blanket etched capacitors. (v) The nanostructure of the GaN/dielectric interface was characterized by high resolution scanning transmission electron microscopy (HR-STEM). An increased roughness of 2-3 monolayers at the GaN surface was observed after blanket etching, which was correlated to the higher density of interface traps. The results presented in this paper give fundamental insight on how the etch and trench processing affects the trap** and robustness of trench-gate GaN-MOSFETs, and provide guidance for the optimization of device performance.
△ Less
Submitted 21 July, 2022; v1 submitted 20 July, 2022;
originally announced July 2022.
-
Vertical GaN Devices: Process and Reliability
Authors:
Shuzhen You,
Karen Geens,
Matteo Borga,
Hu Liang,
Herwig Hahn,
Dirk Fahle,
Michael Heuken,
Kalparupa Mukherjee,
Carlo De Santi,
Matteo Meneghini,
Enrico Zanoni,
Martin Berg,
Peter Ramvall,
Ashutosh Kumar,
Mikael T. Björk,
B. Jonas Ohlsson,
Stefaan Decoutere
Abstract:
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path bas…
▽ More
This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density.
△ Less
Submitted 7 July, 2021; v1 submitted 6 July, 2021;
originally announced July 2021.
-
Exploration of Gate Trench Module for Vertical GaN devices
Authors:
M. Ruzzarin,
K. Geens,
M. Borga,
H. Liang,
S. You,
B. Bakeroot,
S. Decoutere,
C. De Santi,
A. Neviani,
M. Meneghini,
G. Meneghesso,
E. Zanoni
Abstract:
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of the p-GaN layer. The analysis was carried out by comparing the main DC parameters of devices that differ in surface cleaning process of the gate trench, gate d…
▽ More
The aim of this work is to present the optimization of the gate trench module for use in vertical GaN devices in terms of cleaning process of the etched surface of the gate trench, thickness of gate dielectric and magnesium concentration of the p-GaN layer. The analysis was carried out by comparing the main DC parameters of devices that differ in surface cleaning process of the gate trench, gate dielectric thickness, and body layer do**. . On the basis of experimental results, we report that: (i) a good cleaning process of the etched GaN surface of the gate trench is a key factor to enhance the device performance, (ii) a gate dielectric >35-nm SiO2 results in a narrow distribution for DC characteristics, (iii) lowering the p-do** in the body layer improves the ON-resistance (RON). Gate capacitance measurements are performed to further confirm the results. Hypotheses on dielectric trap**/detrap** mechanisms under positive and negative gate bias are reported.
△ Less
Submitted 6 April, 2021; v1 submitted 2 April, 2021;
originally announced April 2021.
