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Contribution to the study of sub-bandgap photon absorption in quantum dot InAs/AlGaAs intermediate band solar cells
Authors:
Juan Villa,
Iñigo Ramiro,
José María Ripalda,
Ignacio Tobías,
Pablo García-Linares,
Elisa Antolín,
Antonio Martí
Abstract:
Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both below-bandgap photon absorption and the output voltage preservation, are possible. However, the experimental work has also revealed that the below-bandgap absorption of lig…
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Intermediate band solar cells (IBSCs) pursue the increase in efficiency by absorbing below-bandgap energy photons while preserving the output voltage. Experimental IBSCs based on quantum dots have already demonstrated that both below-bandgap photon absorption and the output voltage preservation, are possible. However, the experimental work has also revealed that the below-bandgap absorption of light is weak and insufficient to boost the efficiency of the solar cells. The objective of this work is to contribute to the study of this absorption by manufacturing and characterizing a quantum dot intermediate band solar cell with a single quantum dot layer with and without light trap** elements. Using one-dimensional substrate texturing, our results show a three-fold increase in the absorption of below bandgap energy photons in the lowest energy region of the spectrum, a region not previously explored using this approach. Furthermore, we also measure, at 9K, a distinguished split of quasi-Fermi levels between the conduction and intermediate bands, which is a necessary condition to preserve the output voltage of the cell.
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Submitted 13 January, 2021;
originally announced January 2021.
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High open-circuit voltage in transition metal dichalcogenide solar cells
Authors:
Simon A. Svatek,
C. Bueno,
Der-Yuh Lin,
James Kerfoot,
Carlos Macías,
Marius H. Zehender,
Ignacio Tobías,
Pablo García-Linares,
Takashi Taniguchi,
Kenji Watanabe,
Peter Beton,
Elisa Antolín
Abstract:
The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an open-circuit voltage of 1.02 V in a 120 nm-thick vertically stacked homojunction fabricated with substitutionally doped MoS2. This high open-circuit voltage is consistent with the band alignment in the MoS…
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The conversion efficiency of ultra-thin solar cells based on layered materials has been limited by their open-circuit voltage, which is typically pinned to a value under 0.6 V. Here we report an open-circuit voltage of 1.02 V in a 120 nm-thick vertically stacked homojunction fabricated with substitutionally doped MoS2. This high open-circuit voltage is consistent with the band alignment in the MoS2 homojunction, which is more favourable than in widely-used TMDC heterostructures. It is also attributed to the high performance of the substitutionally doped MoS2, in particular the p-type material doped with Nb, which is demonstrated by the observation of electroluminescence from tunnelling graphene/BN/MoS2 structures in spite of the indirect nature of bulk MoS2. We find that illuminating the TMDC/metal contacts decreases the measured open-circuit voltage in MoS2 van der Waals homojunctions because they are photoactive, which points to the need of develo** low-resistance, ohmic contacts to doped MoS2 in order to achieve high efficiency in practical devices. The high open-circuit voltage demonstrated here confirms the potential of layered transition-metal dichalcogenides for the development of highly efficient, ultra-thin solar cells.
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Submitted 29 September, 2020;
originally announced September 2020.
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Potential of the three-terminal heterojunction bipolar transistor solar cell for space applications
Authors:
Antonio Martí,
Pablo García-Linares,
Marius Zehender,
Simon A. Svatek,
Irene Artacho,
Ana Belén Cristóbal,
José R. González,
Carsten Baur,
Iñigo Ramiro,
Federica Cappelluti,
Elisa Antolín
Abstract:
Multi-terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-terminal) ones. In addition, for terrestrial applications, the efficiency of multi-terminal solar cells is less sensitive to solar spectral variations than the two-terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected f…
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Multi-terminal multi-junction solar cells (MJSC) offer higher efficiency potential than series connected (two-terminal) ones. In addition, for terrestrial applications, the efficiency of multi-terminal solar cells is less sensitive to solar spectral variations than the two-terminal series-connected one. In space, generally, cells are always illuminated with AM0 spectrum and no impact is expected from spectral variations. Still, in space, the multi-terminal approach offers some advantages in comparison with the series-connected architecture approach derived from a higher end of life (EOL) efficiency. In this work we review the potential of multi-terminal solar cells for achieving extended EOL efficiencies with emphasis in the potential of the three-terminal heterojunction bipolar transistor solar cell, a novel multi-terminal MJSC architecture with a simplified structure not requiring, for example, tunnel junctions.
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Submitted 14 May, 2020;
originally announced June 2020.
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Considerations for the design of a heterojunction bipolar transistor solar cell
Authors:
Elisa Antolin,
Marius H. Zehender,
Pablo Garcia-Linares,
Simon A. Svatek,
Antonio Marti
Abstract:
Independent current extraction in multi-junction solar cells has gained attention in recent years because it can deliver higher annual energy yield and can work for more semiconductor material combinations than the more established series-connected multi-junction technology. The heterojunction bipolar transistor solar cell concept (HBTSC) was recently proposed as a simple, compact and cost-effecti…
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Independent current extraction in multi-junction solar cells has gained attention in recent years because it can deliver higher annual energy yield and can work for more semiconductor material combinations than the more established series-connected multi-junction technology. The heterojunction bipolar transistor solar cell concept (HBTSC) was recently proposed as a simple, compact and cost-effective multi-terminal device structure that allows independent current extraction. It consists of only three main layers: emitter, base and collector. In this work we use a drift-diffusion model to analyze important aspects in the design of an HBTSC structure based on typical III-V semiconductor materials. We find that carrier injection from the emitter into the collector (transistor effect) degrades the open-circuit voltage of the top sub-cell, but this risk can be eliminated by optimizing the base design. We find requirements for the base layer which are, in principle, achievable in the context of current III-V semiconductor technology.
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Submitted 9 October, 2019;
originally announced October 2019.
