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Characterisation of Gamma-irradiated MCz-Silicon Detectors with a High-$K$ Negative Oxide as Field Insulator
Authors:
S. Bharthuar,
M. Bezak,
E. Brücken,
A Gädda,
M. Golovleva,
A. Karadzhinova-Ferrer,
A. Karjalainen,
N. Kramarenko,
S. Kirschenmann,
P. Luukka,
J. Ott,
E. Tuominen,
M. Väänänen
Abstract:
The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of AC-pixel sensors…
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The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to micro-scale pixel sensor areas to provide enhanced isolation of radiation-induced leakage currents. The motivation of this study is the development of AC-pixel sensors with negative oxides (such as aluminium oxide - Al$_2$O$_3$ and hafnium oxide - HfO$_2$) as field insulators that possess good dielectric strength and provide radiation hardness. Thin films of Al$_2$O$_3$ and HfO$_2$ grown by atomic layer deposition (ALD) method were used as dielectrics for capacitive coupling. A comparison study based on dielectric material used in MOS capacitors indicate HfO$_2$ as a better candidate since it provides higher sensitivity (where, the term sensitivity is defined as the ratio of the change in flat-band voltage to dose) to negative charge accumulation with gamma irradiation.
Further, space charge sign inversion was observed for sensors processed on high resistivity p-type Magnetic Czochralski silicon (MCz-Si) substrates that were irradiated with gamma rays up to a dose of 1 MGy. The inter-pixel resistance values of heavily gamma irradiated AC-coupled pixel sensors suggest that high-$K$ negative oxides as field insulators provide a good electrical isolation between the pixels.
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Submitted 19 November, 2022; v1 submitted 16 November, 2022;
originally announced November 2022.
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Quality assessment of Cadmium Telluride as a detector material for multispectral medical imaging
Authors:
S. Kirschenmann,
M. Bezak,
S. Bharthuar,
E. Brücken,
M. Golovleva,
A. Gädda,
M. Kalliokoski,
A. Karadzhinova-Ferrer,
P. Koponen,
N. Kramarenko,
P. Luukka,
J. Ott,
J. Tikkanen,
R. Turpeinen,
A. Winkler
Abstract:
Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of…
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Cadmium Telluride (CdTe) is a high-Z material with excellent photon radiation absorption properties, making it a promising material to include in radiation detection technologies. However, the brittleness of CdTe crystals as well as their varying concentration of defects necessitate a thorough quality assessment before the complex detector processing procedure. We present our quality assessment of CdTe as a detector material for multispectral medical imaging, a research which is conducted as part of the Consortium Project Multispectral Photon-counting for Medical Imaging and Beam characterization (MPMIB). The aim of the project is to develop novel CdTe detectors and obtain spectrum-per-pixel information that make the distinction between different radiation types and tissues possible. To evaluate the defect density inside the crystals -- which can deteriorate the detector performance -- we employ infrared microscopy (IRM). Posterior data analysis allows us to visualise the defect distributions as 3D defect maps. Additionally, we investigate front and backside differences of the material with current-voltage (IV) measurements to determine the preferred surface for the pixelisation of the crystal, and perform test measurements with the prototypes to provide feedback for further processing. We present the different parts of our quality assessment chain and will close with first experimental results obtained with one of our prototype PC detectors in a small tomographic setup.
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Submitted 26 January, 2022;
originally announced January 2022.
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Employing infrared microscopy (IRM) in combination with a pre-trained neural network to visualise and analyse the defect distribution in Cadmium Telluride crystals
Authors:
S. Kirschenmann,
S. Bharthuar,
E. Brücken,
M. Golovleva,
A. Gädda,
M. Kalliokoski,
P. Luukka,
J. Ott,
A. Winkler
Abstract:
While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a radiation detector is much more complicated. Additionally, large concentrations of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, vary from crystal to cry…
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While Cadmium Telluride (CdTe) excels in terms of photon radiation absorption properties and outperforms silicon (Si) in this respect, the crystal growth, characterization and processing into a radiation detector is much more complicated. Additionally, large concentrations of extended crystallographic defects, such as grain boundaries, twins, and tellurium (Te) inclusions, vary from crystal to crystal and can reduce the spectroscopic performance of the processed detector. A quality assessment of the material prior to the complex fabrication process is therefore crucial. To locate the Te-defects, we scan the crystals with infrared microscopy (IRM) in different layers, obtaining a 3D view of the defect distribution. This provides us with important information on the defect density and locations of Te inclusions, and thus a handle to assess the quality of the material. For the classification of defects in the large amount of IRM image data, a convolutional neural network is employed. From the post-processed and analysed IRM data, 3D defect maps of the CdTe crystals are created, which make different patterns of defect agglomerations inside the crystals visible. In total, more than 100 crystals were scanned with the current IRM setup. In this paper, we compare two crystal batches, each consisting of 12 samples. We find significant differences in the defect distributions of the crystals.
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Submitted 18 August, 2021;
originally announced August 2021.
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Multispectral Photon-Counting for Medical Imaging and Beam Characterization
Authors:
E. Brücken,
S. Bharthuar,
M. Emzir,
M. Golovleva,
A. Gädda,
R. Hostettler,
J. Härkönen,
S. Kirschenmann,
V. Litichevskyi,
P. Luukka,
L. Martikainen,
T. Naaranoja,
I. Nincă,
J. Ott,
H. Petrow,
Z. Purisha,
T. Siiskonen,
S. Särkkä,
J. Tikkanen,
T. Tuuva,
A. Winkler
Abstract:
We present the current status of our project of develo** a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle…
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We present the current status of our project of develo** a photon counting detector for medical imaging. An example motivation lays in producing a monitoring and dosimetry device for boron neutron capture therapy, currently not commercially available. Our approach combines in-house developed detectors based on cadmium telluride or thick silicon with readout chip technology developed for particle physics experiments at CERN. Here we describe the manufacturing process of our sensors as well as the processing steps for the assembly of first prototypes. The prototypes use currently the PSI46digV2.1-r readout chip. The accompanying readout electronics chain that was used for first measurements will also be discussed. Finally we present an advanced algorithm developed by us for image reconstruction using such photon counting detectors with focus on boron neutron capture therapy. This work is conducted within a consortium of Finnish research groups from Helsinki Institute of Physics, Aalto University, Lappeenranta-Lahti University of Technology LUT and Radiation and Nuclear Safety Authority (STUK) under the RADDESS program of Academy of Finland. Keywords: Solid state detectors, X-ray detectors, Gamma detectors, Neutron detectors, Instrumentation for hadron therapy, Medical-image reconstruction methods and algorithms.
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Submitted 20 February, 2020; v1 submitted 8 January, 2020;
originally announced January 2020.
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Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector
Authors:
M. Dragicevic,
M. Friedl,
J. Hrubec,
H. Steininger,
A. Gädda,
J. Härkönen,
T. Lampén,
P. Luukka,
T. Peltola,
E. Tuominen,
E. Tuovinen,
A. Winkler,
P. Eerola,
T. Tuuva,
G. Baulieu,
G. Boudoul,
L. Caponetto,
C. Combaret,
D. Contardo,
T. Dupasquier,
G. Gallbit,
N. Lumb,
L. Mirabito,
S. Perries,
M. Vander Donckt
, et al. (462 additional authors not shown)
Abstract:
A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator…
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A new pixel detector for the CMS experiment was built in order to cope with the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking with a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and allows operation at low comparator thresholds. In this paper, comprehensive test beam studies are presented, which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency is $99.95\pm0.05\,\%$, while the intrinsic spatial resolutions are $4.80\pm0.25\,μ\mathrm{m}$ and $7.99\pm0.21\,μ\mathrm{m}$ along the $100\,μ\mathrm{m}$ and $150\,μ\mathrm{m}$ pixel pitch, respectively. The findings are compared to a detailed Monte Carlo simulation of the pixel detector and good agreement is found.
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Submitted 1 June, 2017;
originally announced June 2017.
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Characterization of Thin p-on-p Radiation Detectors with Active Edges
Authors:
T. Peltola,
X. Wu,
J. Kalliopuska,
C. Granja,
J. Jakubek,
M. Jakubek,
J. Härkönen,
A. Gädda
Abstract:
Active edge p-on-p silicon pixel detectors with thickness of 100 $μ$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edg…
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Active edge p-on-p silicon pixel detectors with thickness of 100 $μ$m were fabricated on 150 mm Float zone silicon wafers at VTT. By combining measured results and TCAD simulations, a detailed study of electric field distributions and charge collection performances as a function of applied voltage in a p-on-p detector was carried out. A comparison with the results of a more conventional active edge p-on-n pixel sensor is presented. The results from 3D spatial map** show that at pixel-to-edge distances less than 100 $μ$m the sensitive volume is extended to the physical edge of the detector when the applied voltage is above full depletion. The results from a spectroscopic measurement demonstrate a good functionality of the edge pixels. The interpixel isolation above full depletion and the breakdown voltage were found to be equal to the p-on-n sensor while lower charge collection was observed in the p-on-p pixel sensor below 80 V. Simulations indicated this to be partly a result of a more favourable weighting field in the p-on-n sensor and partly of lower hole lifetimes in the p-bulk.
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Submitted 21 January, 2016; v1 submitted 6 January, 2016;
originally announced January 2016.
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Processing and characterization of epitaxial GaAs radiation detectors
Authors:
X. Wu,
T. Peltola,
T. Arsenovich,
A. Gädda,
J. Härkönen,
A. Junkes,
A. Karadzhinova,
P. Kostamo,
H. Lipsanen,
P. Luukka,
M. Mattila,
S. Nenonen,
T. Riekkinen,
E. Tuominen,
A. Winkler
Abstract:
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase…
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GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage ($V_{\textrm{fd}}$) of the detectors with 110 $μ\textrm{m}$ epi-layer thickness is in the range of 8 V - 15 V and the leakage current density is about 10 nA/cm$^2$. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.
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Submitted 13 March, 2015;
originally announced March 2015.
