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Direct measure of DNA bending by quantum magnetic imaging of a nano-mechanical torque-balance
Authors:
Zeeshawn Kazi,
Isaac M. Shelby,
Ruhee Nirodi,
Joseph Turnbull,
Hideyuki Watanabe,
Kohei M. Itoh,
Paul A. Wiggins,
Kai-Mei C. Fu
Abstract:
DNA flexibility is a key determinant of biological function, from nucleosome positioning to transcriptional regulation, motivating a direct measurement of the bend-torque response of individual DNA molecules. In this work, DNA bending is detected using a nano-mechanical torque balance formed by tethering a ferromagnetic nanoparticle probe by an individual DNA molecule to a diamond magnetic field i…
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DNA flexibility is a key determinant of biological function, from nucleosome positioning to transcriptional regulation, motivating a direct measurement of the bend-torque response of individual DNA molecules. In this work, DNA bending is detected using a nano-mechanical torque balance formed by tethering a ferromagnetic nanoparticle probe by an individual DNA molecule to a diamond magnetic field imager. The torque exerted by the DNA in response to bending caused by an applied magnetic torque is measured using wide-field imaging of quantum defects near the surface of the diamond. Qualitative measurements of differences in DNA bio-mechanical binding configuration are demonstrated, and as a proof-of-principle, a quantitative measurement of the bend response is made for individual DNA molecules. This quantum-enabled measurement approach could be applied to characterize the bend response of biophysically relevant short DNA molecules as well as the sequence dependence of DNA bending energy.
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Submitted 27 February, 2024;
originally announced February 2024.
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Selective active resonance tuning for multi-mode nonlinear photonic cavities
Authors:
Alan D. Logan,
Nicholas S. Yama,
Kai-Mei C. Fu
Abstract:
Resonant enhancement of nonlinear photonic processes is critical for the scalability of applications such as long-distance entanglement generation. To implement nonlinear resonant enhancement, multiple resonator modes must be individually tuned onto a precise set of process wavelengths, which requires multiple linearly-independent tuning methods. Using coupled auxiliary resonators to indirectly tu…
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Resonant enhancement of nonlinear photonic processes is critical for the scalability of applications such as long-distance entanglement generation. To implement nonlinear resonant enhancement, multiple resonator modes must be individually tuned onto a precise set of process wavelengths, which requires multiple linearly-independent tuning methods. Using coupled auxiliary resonators to indirectly tune modes in a multi-resonant nonlinear cavity is particularly attractive because it allows the extension of a single physical tuning mechanism, such as thermal tuning, to provide the required independent controls. Here we model and simulate the performance and tradeoffs of a coupled-resonator tuning scheme which uses auxiliary resonators to tune specific modes of a multi-resonant nonlinear process. Our analysis determines the tuning bandwidth for steady-state mode field intensity can significantly exceed the inter-cavity coupling rate if the total quality factor of the auxiliary resonator is higher than the multi-mode main resonator. Consequently, over-coupling a nonlinear resonator mode to improve the maximum efficiency of a frequency conversion process will simultaneously expand the auxiliary resonator tuning bandwidth for that mode, indicating a natural compatibility with this tuning scheme. We apply the model to an existing small-diameter triply-resonant ring resonator design and find that a tuning bandwidth of 136 GHz ~ 1.1 nm can be attained for a mode in the telecom band while limiting excess scattering losses to a quality factor of 10^6. Such range would span the distribution of inhomogeneously broadened quantum emitter ensembles as well as resonator fabrication variations, indicating the potential for the auxiliary resonators to enable not only low-loss telecom conversion but also the generation of indistinguishable photons in a quantum network.
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Submitted 27 November, 2023;
originally announced November 2023.
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Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy
Authors:
Christian Pederson,
Rajiv Giridharagopal,
Fang Zhao,
Scott T. Dunham,
Yevgeny Raitses,
David S. Ginger,
Kai-Mei C. Fu
Abstract:
Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atm…
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Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atmosphere using conductive atomic force microscopy (C-AFM) and Kelvin probe force microscopy (KPFM). We correlate these scanning probe measurements with optical spectroscopy of the nitrogen-vacancy and silicon-vacancy centers created via implantation and annealing 15-25 nm beneath the diamond surface. The observed charge state of the defects as a function of optical exposure demonstrates that laser oxidation provides a way to precisely tune the Fermi level over a range of at least 2.00 eV. We also observe a significantly larger oxidation rate for implanted surfaces compared to unimplanted surfaces under ambient conditions. Combined with knowledge of the electron affinity of a surface, these results suggest KPFM is a powerful, high-spatial resolution technique to advance surface Fermi level engineering for charge stabilization of quantum defects.
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Submitted 27 September, 2023;
originally announced September 2023.
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Silicon-lattice-matched boron-doped gallium phosphide: A scalable acousto-optic platform
Authors:
Nicholas S. Yama,
I-Tung Chen,
Srivatsa Chakravarthi,
Bingzhao Li,
Christian Pederson,
Bethany E. Matthews,
Steven R. Spurgeon,
Daniel E. Perea,
Mark G. Wirth,
Peter V. Sushko,
Mo Li,
Kai-Mei C. Fu
Abstract:
The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In t…
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The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide band gap, strong nonlinear properties, and large acousto-optic figure of merit. In this work we demonstrate that silicon-lattice-matched boron-doped GaP (BGaP), grown at the 12-inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths respectively. We further demonstrate the electromechanical generation of low-loss acoustic waves and an integrated acousto-optic (AO) modulator. High-resolution spatial and compositional map**, combined with ab initio calculations indicate two candidates for the excess optical loss in the visible band: the silicon-GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.
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Submitted 19 May, 2023;
originally announced May 2023.
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Properties of donor qubits in ZnO formed by indium ion implantation
Authors:
Xingyi Wang,
Christian Zimmermann,
Michael Titze,
Vasileios Niaouris,
Ethan R. Hansen,
Samuel H. D'Ambrosia,
Lasse Vines,
Edward S. Bielejec,
Kai-Mei C. Fu
Abstract:
Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, c…
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Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.
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Submitted 14 June, 2023; v1 submitted 10 December, 2022;
originally announced December 2022.
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Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
Authors:
Srivatsa Chakravarthi,
Nicholas S. Yama,
Alex Abulnaga,
Ding Huang,
Christian Pederson,
Karine Hestroffer,
Fariba Hatami,
Nathalie P. de Leon,
Kai-Mei C. Fu
Abstract:
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV)…
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Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stam** process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors ($Q$) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with $Q$ of 4100, we observe a three-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of $C = 2$. These results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.
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Submitted 13 December, 2022; v1 submitted 9 December, 2022;
originally announced December 2022.
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Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators
Authors:
Alan D. Logan,
Shivangi Shree,
Srivatsa Chakravarthi,
Nicholas Yama,
Christian Pederson,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at satura…
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We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at saturation pump power. For the complementary difference frequency generation process, a single photon conversion efficiency of 7.2%/mW from visible to telecom is projected for resonators with optimized coupling. Efficient conversion from visible to telecom will facilitate long-distance transmission of spin-entangled photons from solid-state emitters such as the diamond NV center, allowing long-distance entanglement for quantum networks.
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Submitted 16 August, 2022; v1 submitted 13 August, 2022;
originally announced August 2022.
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Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators
Authors:
Lillian Thiel,
Alan D. Logan,
Srivatsa Chakravarthi,
Shivangi Shree,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm…
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We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of $10^4$. Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion
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Submitted 8 October, 2021; v1 submitted 7 October, 2021;
originally announced October 2021.
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Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond
Authors:
Srivatsa Chakravarthi,
Christian Pederson,
Zeeshawn Kazi,
Andrew Ivanov,
Kai-Mei C. Fu
Abstract:
Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance sp…
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Scalable realizations of quantum network technologies utilizing the nitrogen vacancy center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}$N ion implantation and high-temperature vacuum annealing. Origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near lifetime-limited optical linewidths ($<$ 60 MHz) are observed for the majority of the normal-implant (7$^\circ$, $\approx$ 100 nm deep) $^{15}$NV centers. Long-term stability of the NV$^-$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion-energy, and thus lattice damage profile. In contrast to the normal implant condition, NVs from an oblique-implant (85$^\circ$, $\approx$ 20 nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.
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Submitted 6 August, 2021; v1 submitted 19 May, 2021;
originally announced May 2021.
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Probing topological spin structures using light-polarization and magnetic microscopy
Authors:
Till Lenz,
Georgios Chatzidrosos,
Zhiyuan Wang,
Lykourgos Bougas,
Yannick Dumeige,
Arne Wickenbrock,
Nico Kerber,
Jakub Zázvorka,
Fabian Kammerbauer,
Mathias Kläui,
Zeeshawn Kazi,
Kai-Mei C. Fu,
Kohei Itoh,
Hideyuki Watanabe,
Dmitry Budker
Abstract:
We present an imaging modality that enables detection of magnetic moments and their resulting stray magnetic fields. We use wide-field magnetic imaging that employs a diamond-based magnetometer and has combined magneto-optic detection (e.g. magneto-optic Kerr effect) capabilities. We employ such an instrument to image magnetic (stripe) domains in multilayered ferromagnetic structures.
We present an imaging modality that enables detection of magnetic moments and their resulting stray magnetic fields. We use wide-field magnetic imaging that employs a diamond-based magnetometer and has combined magneto-optic detection (e.g. magneto-optic Kerr effect) capabilities. We employ such an instrument to image magnetic (stripe) domains in multilayered ferromagnetic structures.
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Submitted 7 October, 2020;
originally announced October 2020.
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Sensitive magnetometry in challenging environments
Authors:
Kai-Mei C. Fu,
Geoffrey Z. Iwata,
Arne Wickenbrock,
Dmitry Budker
Abstract:
State-of-the-art magnetic field measurements performed in shielded environments with carefully controlled conditions rarely reflect the realities of those applications envisioned in the introductions of peer-reviewed publications. Nevertheless, significant advances in magnetometer sensitivity have been accompanied by serious attempts to bring these magnetometers into the challenging working enviro…
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State-of-the-art magnetic field measurements performed in shielded environments with carefully controlled conditions rarely reflect the realities of those applications envisioned in the introductions of peer-reviewed publications. Nevertheless, significant advances in magnetometer sensitivity have been accompanied by serious attempts to bring these magnetometers into the challenging working environments in which they are often required. This review discusses the ways in which various (predominantly optically-pumped) magnetometer technologies have been adapted for use in a wide range of noisy and physically demanding environments.
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Submitted 12 October, 2020; v1 submitted 31 July, 2020;
originally announced August 2020.
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Inverse-designed photon extractors for optically addressable defect qubits
Authors:
Srivatsa Chakravarthi,
Pengning Chao,
Christian Pederson,
Sean Molesky,
Andrew Ivanov,
Karine Hestroffer,
Fariba Hatami,
Alejandro W. Rodriguez,
Kai-Mei C. Fu
Abstract:
Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface i…
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Solid-state defect qubit systems with spin-photon interfaces show great promise for quantum information and metrology applications. Photon collection efficiency, however, presents a major challenge for defect qubits in high refractive index host materials. Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface including spectral response, photon polarization and collection mode. Further, the design process can incorporate additional constraints, such as fabrication tolerance and material processing limitations. Here we design and demonstrate a compact hybrid gallium phosphide on diamond inverse-design planar dielectric structure coupled to single near-surface nitrogen-vacancy centers formed by implantation and annealing. We observe device operation near the theoretical limit and measure up to a 14-fold broadband enhancement in photon extraction efficiency. We expect that such inverse-designed devices will enable realization of scalable arrays of single-photon emitters, rapid characterization of new quantum emitters, sensing and efficient heralded entanglement schemes.
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Submitted 15 December, 2020; v1 submitted 24 July, 2020;
originally announced July 2020.
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Wide-field dynamic magnetic microscopy using double-double quantum driving of a diamond defect ensemble
Authors:
Zeeshawn Kazi,
Isaac M. Shelby,
Hideyuki Watanabe,
Kohei M. Itoh,
Vaithiyalingam Shutthanandan,
Paul A. Wiggins,
Kai-Mei C. Fu
Abstract:
Wide-field magnetometry can be realized by imaging the optically-detected magnetic resonance of diamond nitrogen vacancy (NV) center ensembles. However, NV ensemble inhomogeneities significantly limit the magnetic-field sensitivity of these measurements. We demonstrate a double-double quantum (DDQ) driving technique to facilitate wide-field magnetic imaging of dynamic magnetic fields at a micron s…
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Wide-field magnetometry can be realized by imaging the optically-detected magnetic resonance of diamond nitrogen vacancy (NV) center ensembles. However, NV ensemble inhomogeneities significantly limit the magnetic-field sensitivity of these measurements. We demonstrate a double-double quantum (DDQ) driving technique to facilitate wide-field magnetic imaging of dynamic magnetic fields at a micron scale. DDQ imaging employs four-tone radio frequency pulses to suppress inhomogeneity-induced variations of the NV resonant response. As a proof-of-principle, we use the DDQ technique to image the dc magnetic field produced by individual magnetic-nanoparticles tethered by single DNA molecules to a diamond sensor surface. This demonstrates the efficacy of the diamond NV ensemble system in high-frame-rate magnetic microscopy, as well as single-molecule biophysics applications.
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Submitted 15 January, 2021; v1 submitted 14 February, 2020;
originally announced February 2020.
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Quantum Simulators: Architectures and Opportunities
Authors:
Ehud Altman,
Kenneth R. Brown,
Giuseppe Carleo,
Lincoln D. Carr,
Eugene Demler,
Cheng Chin,
Brian DeMarco,
Sophia E. Economou,
Mark A. Eriksson,
Kai-Mei C. Fu,
Markus Greiner,
Kaden R. A. Hazzard,
Randall G. Hulet,
Alicia J. Kollar,
Benjamin L. Lev,
Mikhail D. Lukin,
Ruichao Ma,
Xiao Mi,
Shashank Misra,
Christopher Monroe,
Kater Murch,
Zaira Nazario,
Kang-Kuen Ni,
Andrew C. Potter,
Pedram Roushan
, et al. (12 additional authors not shown)
Abstract:
Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operati…
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Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education.
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Submitted 20 December, 2019; v1 submitted 14 December, 2019;
originally announced December 2019.
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400%/W second harmonic conversion efficiency in $\mathrm{14 μm}$-diameter gallium phosphide-on-oxide resonators
Authors:
Alan D. Logan,
Michael Gould,
Emma R. Schmidgall,
Karine Hestroffer,
Zin Lin,
Weiliang **,
Arka Majumdar,
Fariba Hatami,
Alejandro W. Rodriguez,
Kai-Mei C. Fu
Abstract:
Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring resonators with quality factors $Q \sim 10^4$, low mode volumes $V \sim 30 (λ/n)^3$, and high nonlinear mode overlaps. Measurements and simulations indicate that convers…
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Second harmonic conversion from 1550~nm to 775~nm with an efficiency of 400% W$^{-1}$ is demonstrated in a gallium phosphide (GaP) on oxide integrated photonic platform. The platform consists of doubly-resonant, phase-matched ring resonators with quality factors $Q \sim 10^4$, low mode volumes $V \sim 30 (λ/n)^3$, and high nonlinear mode overlaps. Measurements and simulations indicate that conversion efficiencies can be increased by a factor of 20 by improving the waveguide-cavity coupling to achieve critical coupling in current devices.
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Submitted 10 October, 2018;
originally announced October 2018.
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Inverse Design of Compact Multimode Cavity Couplers
Authors:
Weiliang **,
Sean Molesky,
Zin Lin,
Kai-Mei C. Fu,
Alejandro W. Rodriguez
Abstract:
Efficient coupling between on-chip sources and cavities plays a key role in silicon photonics. However, despite the importance of this basic functionality, there are few systematic design tools to simultaneously control coupling between multiple modes in a compact resonator and a single waveguide. Here, we propose a large-scale adjoint optimization approach to produce wavelength-scale waveguide--c…
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Efficient coupling between on-chip sources and cavities plays a key role in silicon photonics. However, despite the importance of this basic functionality, there are few systematic design tools to simultaneously control coupling between multiple modes in a compact resonator and a single waveguide. Here, we propose a large-scale adjoint optimization approach to produce wavelength-scale waveguide--cavity couplers operating over tunable and broad frequency bands. We numerically demonstrate couplers discovered by this method that can achieve critical, or nearly critical, coupling between multi-ring cavities and a single waveguide at up to six widely separated wavelengths spanning the $560$--$1500$~nm range of interest for on-chip nonlinear optical devices.
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Submitted 2 September, 2018; v1 submitted 15 March, 2018;
originally announced March 2018.
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Frequency control of single quantum emitters in integrated photonic circuits
Authors:
Emma R. Schmidgall,
Srivatsa Chakravarthi,
Michael Gould,
Ian R. Christen,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect…
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Generating entangled graph states of qubits requires high entanglement rates, with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
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Submitted 23 February, 2018;
originally announced February 2018.
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Efficient extraction of zero-phonon-line photons from single nitrogen-vacancy centers in an integrated GaP-on-diamond platform
Authors:
Michael Gould,
Emma R. Schmidgall,
Shabnam Dadgostar,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL pho…
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Scaling beyond two-node quantum networks using nitrogen vacancy (NV) centers in diamond is limited by the low probability of collecting zero phonon line (ZPL) photons from single centers. Here, we demonstrate GaP-on-diamond disk resonators which resonantly couple ZPL photons from single NV centers to single-mode waveguides. In these devices, the probability of a single NV center emitting a ZPL photon into the guided waveguide mode after optical excitation can reach 9%, due to a combination of resonant enhancement of the ZPL emission and efficient coupling between the resonator and waveguide. We verify the single-photon nature of the emission and experimentally demonstrate both high in-waveguide photon numbers and substantial Purcell enhancement for a set of devices. These devices may enable scalable integrated quantum networks based on NV centers.
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Submitted 15 June, 2016; v1 submitted 6 June, 2016;
originally announced June 2016.
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A Large-Scale GaP-on-Diamond Integrated Photonics Platform for NV Center-Based Quantum Information
Authors:
Michael Gould,
Srivatsa Chakravarthi,
Ian R. Christen,
Nicole Thomas,
Shabnam Dadgostar,
Yuncheng Song,
Minjoo Larry Lee,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place th…
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We present chip-scale transmission measurements for three key components of a GaP-on-diamond integrated photonics platform: waveguide-coupled disk resonators, directional couplers, and grating couplers. We also present proof-of-principle measurements demonstrating nitrogen-vacancy (NV) center emission coupled into selected devices. The demonstrated device performance, uniformity and yield place the platform in a strong position to realize measurement-based quantum information protocols utilizing the NV center in diamond.
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Submitted 16 October, 2015;
originally announced October 2015.
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Waveguide-integrated single-crystalline GaP resonators on diamond
Authors:
Nicole Thomas,
Russell J. Barbour,
Yuncheng Song,
Minjoo Larry Lee,
Kai-Mei C. Fu
Abstract:
Large-scale entanglement of nitrogen-vacancy (NV) centers in diamond will require integration of NV centers with optical networks. Toward this goal, we present the fabrication of single-crystalline gallium phosphide (GaP) resonator-waveguide coupled structures on diamond. We demonstrate coupling between 1 μm diameter GaP disk resonators and waveguides with a loaded Q factor of 3,800, and evaluate…
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Large-scale entanglement of nitrogen-vacancy (NV) centers in diamond will require integration of NV centers with optical networks. Toward this goal, we present the fabrication of single-crystalline gallium phosphide (GaP) resonator-waveguide coupled structures on diamond. We demonstrate coupling between 1 μm diameter GaP disk resonators and waveguides with a loaded Q factor of 3,800, and evaluate their potential for efficient photon collection if integrated with single photon emitters. This work opens a path toward scalable NV entanglement in the hybrid GaP/diamond platform, with the potential to integrate on-chip photon collection, switching, and detection for applications in quantum information processing.
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Submitted 23 April, 2014;
originally announced April 2014.
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Resonant enhancement of the zero-phonon emission from a color center in a diamond cavity
Authors:
Andrei Faraon,
Paul E. Barclay,
Charles Santori,
Kai-Mei C. Fu,
Raymond G. Beausoleil
Abstract:
We demonstrate coupling of the zero-phonon line of individual nitrogen-vacancy centers and the modes of microring resonators fabricated in single-crystal diamond. A zero-phonon line enhancement exceeding ten-fold is estimated from lifetime measurements at cryogenic temperatures. The devices are fabricated using standard semiconductor techniques and off-the-shelf materials, thus enabling integrated…
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We demonstrate coupling of the zero-phonon line of individual nitrogen-vacancy centers and the modes of microring resonators fabricated in single-crystal diamond. A zero-phonon line enhancement exceeding ten-fold is estimated from lifetime measurements at cryogenic temperatures. The devices are fabricated using standard semiconductor techniques and off-the-shelf materials, thus enabling integrated diamond photonics.
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Submitted 17 December, 2010;
originally announced December 2010.