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Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors
Authors:
N. Akchurin,
G. Altopp,
B. Burkle,
W. D. Frey,
U. Heintz,
N. Hinton,
M. Hoeferkamp,
Y. Kazhykarim,
V. Kuryatkov,
T. Mengke,
T. Peltola,
S. Seidel,
E. Spencer,
M. Tripathi,
J. Voelker
Abstract:
Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to the Si/SiO$_2$-interface. High density positive interface net charge can be detrimental to the operation of a multi-channel $n$-on-$p$ sensor since the inversi…
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Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to the Si/SiO$_2$-interface. High density positive interface net charge can be detrimental to the operation of a multi-channel $n$-on-$p$ sensor since the inversion layer generated under the Si/SiO$_2$-interface can cause loss of position resolution by creating a conduction channel between the electrodes. In the investigation of the radiation-induced accumulation of oxide charge and interface traps, a capacitance-voltage characterization study of n/$γ$- and $γ$-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed that close agreement between measurement and simulation were possible when oxide charge density was complemented by both acceptor- and donor-type deep interface traps with densities comparable to the oxide charges. Corresponding inter-strip resistance simulations of a $n$-on-$p$ sensor with the tuned oxide charge density and interface traps show close agreement with experimental results. The beneficial impact of radiation-induced accumulation of deep interface traps on inter-electrode isolation may be considered in the optimization of the processing parameters of isolation implants on $n$-on-$p$ sensors for the extreme radiation environments.
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Submitted 1 August, 2023; v1 submitted 23 May, 2023;
originally announced May 2023.
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A portable and high intensity 24 keV neutron source based on $^{124}$Sb-$^{9}$Be photoneutrons and an iron filter
Authors:
A. Biekert,
C. Chang,
L. Chaplinsky,
C. W. Fink,
W. D. Frey,
M. Garcia-Sciveres,
W. Guo,
S. A. Hertel,
X. Li,
J. Lin,
M. Lisovenko,
R. Mahapatra,
D. N. McKinsey,
S. Mehrotra,
N. Mirabolfathi,
P. K. Patel,
B. Penning,
H. D. Pinckney,
M. Reed,
R. K. Romani,
B. Sadoulet,
R. J. Smith,
P. Sorensen,
B. Suerfu,
A. Suzuki
, et al. (5 additional authors not shown)
Abstract:
A portable monoenergetic 24 keV neutron source based on the $^{124}$Sb-$^9$Be photoneutron reaction and an iron filter has been constructed and characterized. The coincidence of the neutron energy from SbBe and the low interaction cross-section with iron (mean free path up to 29 cm) makes pure iron specially suited to shield against gamma rays from $^{124}$Sb decays while letting through the neutr…
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A portable monoenergetic 24 keV neutron source based on the $^{124}$Sb-$^9$Be photoneutron reaction and an iron filter has been constructed and characterized. The coincidence of the neutron energy from SbBe and the low interaction cross-section with iron (mean free path up to 29 cm) makes pure iron specially suited to shield against gamma rays from $^{124}$Sb decays while letting through the neutrons. To increase the $^{124}$Sb activity and thus the neutron flux, a $>$1 GBq $^{124}$Sb source was produced by irradiating a natural Sb metal pellet with a high flux of thermal neutrons in a nuclear reactor. The design of the source shielding structure makes for easy transportation and deployment. A hydrogen gas proportional counter is used to characterize the neutrons emitted by the source and a NaI detector is used for gamma background characterization. At the exit opening of the neutron beam, the characterization determined the neutron flux in the energy range 20-25 keV to be 5.36$\pm$0.20 neutrons per cm$^2$ per second and the total gamma flux to be 213$\pm$6 gammas per cm$^2$ per second (numbers scaled to 1 GBq activity of the $^{124}$Sb source). A liquid scintillator detector is demonstrated to be sensitive to neutrons with incident kinetic energies from 8 to 17 keV, so it can be paired with the source as a backing detector for neutron scattering calibration experiments. This photoneutron source provides a good tool for in-situ low energy nuclear recoil calibration for dark matter experiments and coherent elastic neutrino-nucleus scattering experiments.
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Submitted 7 February, 2023;
originally announced February 2023.
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Preparation and Characterization of Thin Arsenic Targets for Stacked-Target Experiments
Authors:
Andrew S. Voyles,
Morgan B. Fox,
Jonathan T. Morrell,
Michael P. Zach,
Evan K. Still,
Lee A. Bernstein,
Wesley D. Frey,
Burton J. Mehciz
Abstract:
Thin, uniform arsenic targets suitable for high-fidelity cross section measurements in stacked-target experiments were prepared by electrodeposition of arsenic on titanium backings from aqueous solutions. Electrolytic cells were constructed and capable of arsenic deposits ranging in mass from approximately 1$\unicode{x2013}$29 mg (0.32$\unicode{x2013}$7.2 mg/cm$^2$, 0.57$\unicode{x2013}$13 $μ$m).…
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Thin, uniform arsenic targets suitable for high-fidelity cross section measurements in stacked-target experiments were prepared by electrodeposition of arsenic on titanium backings from aqueous solutions. Electrolytic cells were constructed and capable of arsenic deposits ranging in mass from approximately 1$\unicode{x2013}$29 mg (0.32$\unicode{x2013}$7.2 mg/cm$^2$, 0.57$\unicode{x2013}$13 $μ$m). Examination of electrodeposit surface morphology by scanning electron microscopy and microanalysis was performed to investigate the uniformity of produced targets. Brief studies of plating growth dynamics and structural properties through cyclic voltammetry were also undertaken. Alternative target fabrication approaches by vapor deposition and electrodeposition from a deep eutectic solvent were additionally conducted. We further introduce a non-destructive characterization method for thin targets by neutron activation, which is independent of neutron flux shape, environmental factors, and source geometry, while correcting for any potential scatter or absorption effects.
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Submitted 15 February, 2024; v1 submitted 10 June, 2021;
originally announced June 2021.
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Charge Collection and Electrical Characterization of Neutron Irradiated Silicon Pad Detectors for the CMS High Granularity Calorimeter
Authors:
N. Akchurin,
P. Almeida,
G. Altopp,
M. Alyari,
T. Bergauer,
E. Brondolin,
B. Burkle,
W. D. Frey,
Z. Gecse,
U. Heintz,
N. Hinton,
V. Kuryatkov,
R. Lipton,
M. Mannelli,
T. Mengke,
P. Paulitsch,
T. Peltola,
F. Pitters,
E. Sicking,
E. Spencer,
M. Tripathi,
M. Vicente Barreto Pinto,
J. Voelker,
Z. Wang,
R. Yohay
Abstract:
The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, an…
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The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-$μ\textrm{m}$ thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 $^\circ$C to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 $^\circ$C. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60$\%$ or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90$\%$ at the lowest fluence, at 600 V. The collected charge close to the fluence of $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$ exceeds 1 fC at voltages beyond 800 V.
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Submitted 4 August, 2020; v1 submitted 16 May, 2020;
originally announced May 2020.
