Vanadium-Doped Molybdenum Disulfide Monolayers with Tunable Electronic and Magnetic Properties: Do Vanadium-Vacancy Pairs Matter?
Authors:
Da Zhou,
Yen Thi Hai Pham,
Diem Thi-Xuan Dang,
David Sanchez,
Aaryan Oberoi,
Ke Wang,
Andres Fest,
Alexander Sredenschek,
Mingzu Liu,
Humberto Terrones,
Saptarshi Das,
Dai-Nam Le,
Lilia M. Woods,
Manh-Huong Phan,
Mauricio Terrones
Abstract:
Monolayers of molybdenum disulfide (MoS2) are the most studied two-dimensional (2D) transition-metal dichalcogenides (TMDs), due to its exceptional optical, electronic, and opto-electronic properties. Recent studies have shown the possibility of incorporating a small amount of magnetic transition metals (e.g., Fe, Co, Mn, V) into MoS2 to form a 2D dilute magnetic semiconductor (2D-DMS). However, t…
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Monolayers of molybdenum disulfide (MoS2) are the most studied two-dimensional (2D) transition-metal dichalcogenides (TMDs), due to its exceptional optical, electronic, and opto-electronic properties. Recent studies have shown the possibility of incorporating a small amount of magnetic transition metals (e.g., Fe, Co, Mn, V) into MoS2 to form a 2D dilute magnetic semiconductor (2D-DMS). However, the origin of the observed ferromagnetism has remained elusive, due to the presence of randomly generated sulfur vacancies during synthesis that can pair with magnetic dopants to form complex dopant-vacancy configurations altering the magnetic order induced by the dopants. By combining high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) imaging with first-principles density functional theory (DFT) calculations and magnetometry data, we demonstrate the critical effects of sulfur vacancies and their pairings with vanadium atoms on the magnetic ordering in V-doped MoS2 (V-MoS2) monolayers. Additionally, we fabricated a series of field effect transistors on these V-MoS2 monolayers and observed the emergence of p-type behavior as the vanadium concentration increased. Our study sheds light on the origin of ferromagnetism in V-MoS2 monolayers and provides a foundation for future research on defect engineering to tune the electronic and magnetic properties of atomically thin TMD-based DMSs.
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Submitted 30 January, 2024;
originally announced January 2024.
