Showing 1–38 of 38 results for author: Ferrari, A C

Graphene phase modulators operating in the transparency regime

Authors: H. F. Y. Watson, A. Ruocco, M. Tiberi, J. E. Muench, O. Balci, S. M. Shinde, S. Mignuzzi, M. Pantouvaki, D. Van Thourhout, R. Sordan, A. Tomadin, M. Romagnoli, A. C. Ferrari

Abstract: Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pu… ▽ More Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, reduce overall power consumption by minimising the number of channels, and increase noise tolerance. To reduce errors when decoding the received signal, intersymbol interference must be minimised. This is achieved with pure phase modulation, where the phase of the optical signal is controlled without changing its intensity. Phase modulators are characterised by the voltage required to achieve a $π$ phase shift V$_π$, the device length L, and their product V$_π$L. To reduce power consumption, IQ modulators are needed with$<$1V drive voltages and compact (sub-cm) dimensions, which translate in V$_π$L$<$1Vcm. Si and LiNbO$_3$ (LN) IQ modulators do not currently meet these requirements, because V$_π$L$>$1Vcm. Here, we report a double single-layer graphene (SLG) Mach-Zehnder modulator (MZM) with pure phase modulation in the transparent regime, where optical losses are minimised and remain constant with increasing voltage. Our device has $V_πL\sim$0.3Vcm, matching state-of-the-art SLG-based MZMs and plasmonic LN MZMs, but with pure phase modulation and low insertion loss ($\sim$5dB), essential for IQ modulation. Our $V_πL$ is$\sim$5 times lower than the lowest thin-film LN MZMs, and$\sim$3 times lower than the lowest Si MZMs. This enables devices with complementary metal-oxide semiconductor compatible V$_π$L ($<$1Vcm) and smaller footprint than LN or Si MZMs, improving circuit density and reducing power consumption by one order of magnitude. △ Less

Submitted 25 December, 2023; originally announced January 2024.

A foundation model for atomistic materials chemistry

Authors: Ilyes Batatia, Philipp Benner, Yuan Chiang, Alin M. Elena, Dávid P. Kovács, Janosh Riebesell, Xavier R. Advincula, Mark Asta, Matthew Avaylon, William J. Baldwin, Fabian Berger, Noam Bernstein, Arghya Bhowmik, Samuel M. Blau, Vlad Cărare, James P. Darby, Sandip De, Flaviano Della Pia, Volker L. Deringer, Rokas Elijošius, Zakariya El-Machachi, Fabio Falcioni, Edvin Fako, Andrea C. Ferrari, Annalena Genreith-Schriever , et al. (51 additional authors not shown)

Abstract: Machine-learned force fields have transformed the atomistic modelling of materials by enabling simulations of ab initio quality on unprecedented time and length scales. However, they are currently limited by: (i) the significant computational and human effort that must go into development and validation of potentials for each particular system of interest; and (ii) a general lack of transferabilit… ▽ More Machine-learned force fields have transformed the atomistic modelling of materials by enabling simulations of ab initio quality on unprecedented time and length scales. However, they are currently limited by: (i) the significant computational and human effort that must go into development and validation of potentials for each particular system of interest; and (ii) a general lack of transferability from one chemical system to the next. Here, using the state-of-the-art MACE architecture we introduce a single general-purpose ML model, trained on a public database of 150k inorganic crystals, that is capable of running stable molecular dynamics on molecules and materials. We demonstrate the power of the MACE-MP-0 model - and its qualitative and at times quantitative accuracy - on a diverse set problems in the physical sciences, including the properties of solids, liquids, gases, chemical reactions, interfaces and even the dynamics of a small protein. The model can be applied out of the box and as a starting or "foundation model" for any atomistic system of interest and is thus a step towards democratising the revolution of ML force fields by lowering the barriers to entry. △ Less

Submitted 1 March, 2024; v1 submitted 29 December, 2023; originally announced January 2024.

Comments: 119 pages, 63 figures, 37MB PDF

Graphene-perovskite fibre photodetectors

Authors: S. Akhavan, A. Taheri Najafabadi, S. Mignuzzi, M. Abdi Jalebi, A. Ruocco, I. Paradisanos, O. Balci, Z. Andaji-Garmaroudi, I. Goykhman, L. G. Occhipinti, E. Lidorikis, S. D. Stranks, A. C. Ferrari

Abstract: The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, we prepar… ▽ More The integration of optoelectronic devices, such as transistors and photodetectors (PDs), into wearables and textiles is of great interest for applications such as healthcare and physiological monitoring. These require flexible/wearable systems adaptable to body motions, thus materials conformable to non-planar surfaces, and able to maintain performance under mechanical distortions. Here, we prepare fibre PDs combining rolled graphene layers and photoactive perovskites. Conductive fibres ($\sim$500$Ω$/cm) are made by rolling single layer graphene (SLG) around silica fibres, followed by deposition of a dielectric layer (Al$_{2}$O$_{3}$ and parylene C), another rolled SLG as channel, and perovskite as photoactive component. The resulting gate-tunable PDs have response time$\sim$5ms, with an external responsivity$\sim$22kA/W at 488nm for 1V bias. The external responsivity is two orders of magnitude higher and the response time one order of magnitude faster than state-of-the-art wearable fibre based PDs. Under bending at 4mm radius, up to$\sim$80\% photocurrent is maintained. Washability tests show$\sim$72\% of initial photocurrent after 30 cycles, promising for wearable applications. △ Less

Submitted 19 November, 2023; originally announced November 2023.

Ultrashort pulse generation from a graphene-coupled passively mode-locked terahertz laser

Authors: Elisa Riccardi, Valentino Pistore, Seonggil Kang, Lukas Seitner, Anna De Vetter, Christian Jirauschek, Juliette Mangeney, Lianhe Li, A. Giles Davies, Edmund H. Linfield, Andrea C. Ferrari, Sukhdeep S. Dhillon, Miriam S. Vitiello

Abstract: The generation of stable trains of ultra-short (fs-ps), terahertz (THz)-frequency radiation pulses, with large instantaneous intensities, is an underpinning requirement for the investigation of light-matter interactions, for metrology and for ultra-high-speed communications. In solid-state electrically-pumped lasers, the primary route for generating short pulses is through passive mode-locking. Ho… ▽ More The generation of stable trains of ultra-short (fs-ps), terahertz (THz)-frequency radiation pulses, with large instantaneous intensities, is an underpinning requirement for the investigation of light-matter interactions, for metrology and for ultra-high-speed communications. In solid-state electrically-pumped lasers, the primary route for generating short pulses is through passive mode-locking. However, this has not yet been achieved in the THz range, defining one of the longest standing goals over the last two decades. In fact, the realization of passive mode-locking has long been assumed to be inherently hindered by the fast recovery times associated with the intersubband gain of THz lasers. Here, we demonstrate a self-starting miniaturized ultra-short pulse THz laser, exploiting an original device architecture that includes the surface patterning of multilayer-graphene saturable absorbers distributed along the entire cavity of a double-metal semiconductor 2.30-3.55 THz wire laser. Self-starting pulsed emission with 4.0-ps-long pulses in a compact, all-electronic, all-passive and inexpensive configuration is demonstrated. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Comments: 20 pages, 4 figures

Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures

Authors: M. Asgari, L. Viti, O. Balci, S. M. Shinde, J. Zhang, H. Ramezani, S. Sharma, A. Meersha, G. Menichetti, C. McAleese, B. Conran, X. Wang, A. Tomadin, A. C. Ferrari, M. S. Vitiello

Abstract: The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration… ▽ More The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration of SLG-based active elements with pre-existing technological platforms in a scalable way, while maintaining performance level unperturbed. Here, we report on the development of room temperature THz detection in large-area SLG, grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We selectively activate the photo-thermoelectric detection dynamics, and we employ different dielectric configurations on SLG on Al2O3 with and without large-area CVD hBN cap** to investigate their effect on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ~5ns and noise equivalent powers ~1nWHz-1/2 are achieved under zero-bias operation. This shows the feasibility of scalable, large-area, layered materials heterostructures for THz detection. △ Less

Submitted 28 June, 2022; originally announced June 2022.

Comments: 15 pages, 4 Figures. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at the link https://doi.org/10.1063/5.0097726

Wafer-scale integration of graphene-based photonic devices

Authors: Marco A. Giambra, Vaidotas Mišeikis, Sergio Pezzini, Simone Marconi, Alberto Montanaro, Filippo Fabbri, Vito Sorianello, Andrea C. Ferrari, Camilla Coletti, Marco Romagnoli

Abstract: Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour depositi… ▽ More Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour deposition (CVD) of single layer graphene (SLG) matrices comprising up to ~12000 individual single crystals (SCs), grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ~80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ~5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ~0.25, 0.45, 0.75, 1 dB V-1 for device lengths ~30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hBN is used to protected SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. Our full process flow (from growth to device fabrication) enables the commercial implementation of graphene-based photonic devices. △ Less

Submitted 9 February, 2021; v1 submitted 18 November, 2020; originally announced December 2020.

Comments: 30 pages, 9 Figures

Tunable, grating-gated, graphene-on-polyimide terahertz modulators

Authors: Alessandra Di Gaspare, Eva A. A. Pogna, Luca Salemi, Osman Balci, Alisson R. Cadore, Sachin M. Shinde, Lianhe Li, Cinzia di Franco, A. Giles Davies, Edmund Linfield, Andrea C. Ferrari, Gaetano Scamarcio, Miriam S. Vitiello

Abstract: We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonan… ▽ More We present an electrically switchable graphene terahertz (THz) modulator with a tunable-by-design optical bandwidth and we exploit it to compensate the cavity dispersion of a quantum cascade laser (QCL). Electrostatic gating is achieved by a metal-grating used as a gate electrode, with an HfO2/AlOx gate dielectric on top. This is patterned on a polyimide layer, which acts as a quarter wave resonance cavity, coupled with an Au reflector underneath. We get 90% modulation depth of the intensity, combined with a 20 kHz electrical bandwidth in the 1.9 _ 2.7 THz range. We then integrate our modulator with a multimode THz QCL. By adjusting the modulator operational bandwidth, we demonstrate that the graphene modulator can partially compensates the QCL cavity dispersion, resulting in an integrated laser behaving as a stable frequency comb over 35% of the laser operational range, with 98 equidistant optical modes and with a spectral coverage of ~ 1.2 THz. This has significant potential for frontier applications in the terahertz, as tunable transformation-optics devices, active photonic components, adaptive and quantum optics, and as a metrological tool for spectroscopy at THz frequencies. △ Less

Submitted 22 November, 2020; originally announced December 2020.

Comments: 22 pages, 6 figures

Tunable broadband light emission from graphene

Authors: Lavinia Ghirardini, Eva A. A. Pogna, Giancarlo Soavi, Andrea Tomadin, Paolo Biagioni, Stefano Dal Conte, Domenico De Fazio, T. Taniguchi, K. Watanabe, Lamberto Duò, Marco Finazzi, Marco Polini, Andrea C. Ferrari, Giulio Cerullo, Michele Celebrano

Abstract: Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwi… ▽ More Graphene is an ideal material for integrated nonlinear optics thanks to its strong light-matter interaction and large nonlinear optical susceptibility. Graphene has been used in optical modulators, saturable absorbers, nonlinear frequency converters, and broadband light emitters. For the latter application, a key requirement is the ability to control and engineer the emission wavelength and bandwidth, as well as the electronic temperature of graphene. Here, we demonstrate that the emission wavelength of graphene$'$ s broadband hot carrier photoluminescence can be tuned by integration on photonic cavities, while thermal management can be achieved by out-of-plane heat transfer to hexagonal boron nitride. Our results pave the way to graphene-based ultrafast broadband light emitters with tunable emission. △ Less

Submitted 3 December, 2020; originally announced December 2020.

Comments: 22 pages, 5 Figures

Terahertz frequency combs exploiting an on-chip solution processed graphene-quantum cascade laser coupled-cavity architecture

Authors: F. P. Mezzapesa, K. Garrasi, J. Schmidt, L. Salemi, V. Pistore, L. Li, A. G. Davies, E. H. Linfield, M. Riesch, C. Jirauschek, T. Carey, F. Torrisi, A. C. Ferrari, M. S. Vitiello

Abstract: The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersu… ▽ More The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersubband gain medium, self-lock the optical modes in phase, allowing stable comb operation, albeit over a restricted dynamic range (~ 20% of the laser operational range). Here, we engineer miniaturized THz FCSs comprising a heterogeneous THz QCL integrated with a tightly-coupled on-chip solution-processed graphene saturable-absorber reflector that preserves phase-coherence between lasing modes even when four-wave mixing no longer provides dispersion compensation. This enables a high-power (8 mW) FCS with over 90 optical modes to be demonstrated, over more than 55% of the laser operational range. Furthermore, stable injection-locking is showed, paving the way to impact a number of key applications, including high-precision tuneable broadband-spectroscopy and quantum-metrology. △ Less

Submitted 23 November, 2020; originally announced November 2020.

Comments: 31 pages, 11 figures, to be published in ACS Photonics

Wide field of view crystal orientation map** of layered materials

Authors: A. Orekhov, D. Jannis, N. Gauquelin, G. Guzzinati, A. Nalin Mehta, S. Psilodimitrakopoulos, L. Mouchliadis, P. K. Sahoo, I. Paradisanos, A. C. Ferrari, G. Kioseoglou, E. Stratakis, J. Verbeeck

Abstract: Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning elect… ▽ More Layered materials (LMs) are at the centre of an ever increasing research effort due to their potential use in a variety of applications. The presence of imperfections, such as bi- or multilayer areas, holes, grain boundaries, isotropic and anisotropic deformations, etc. are detrimental for most (opto)electronic applications. Here, we present a set-up able to transform a conventional scanning electron microscope into a tool for structural analysis of a wide range of LMs. An hybrid pixel electron detector below the sample makes it possible to record two dimensional (2d) diffraction patterns for every probe position on the sample surface (2d), in transmission mode, thus performing a 2d+2d=4d STEM (scanning transmission electron microscopy) analysis. This offers a field of view up to 2 mm2, while providing spatial resolution in the nm range, enabling the collection of statistical data on grain size, relative orientation angle, bilayer stacking, strain, etc. which can be mined through automated open-source data analysis software. We demonstrate this approach by analyzing a variety of LMs, such as mono- and multi-layer graphene, graphene oxide and MoS2, showing the ability of this method to characterize them in the tens of nm to mm scale. This wide field of view range and the resulting statistical information are key for large scale applications of LMs. △ Less

Submitted 3 November, 2020; originally announced November 2020.

Comments: A. Orekhov and D. Jannis contributed equally to this work. J. Verbeeck is corresponding author

Low-loss integrated nanophotonic circuits with layered semiconductor materials

Authors: Tianyi Liu, Ioannis Paradisanos, Jijun He, Alisson R. Cadore, Junqiu Liu, Mikhail Churaev, Rui Ning Wang, Arslan S. Raja, Clément Javerzac-Galy, Philippe Rölli, Domenico De Fazio, Barbara L. T. Rosa, Sefaattin Tongay, Giancarlo Soavi, Andrea C. Ferrari, Tobias J. Kippenberg

Abstract: Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, t… ▽ More Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integrated circuits (PICs), these semiconductor materials have enabled new classes of light-emitting diodes, modulators and photodetectors, that could be amenable to wafer-scale manufacturing. For integrated photonic devices, the optical losses of the PICs are critical. In contrast to silicon, silicon nitride (Si3N4) has emerged as a low-loss integrated platform with a wide transparency window from ultraviolet to mid-infrared and absence of two-photon absorption at telecommunication bands. Moreover, it is suitable for nonlinear integrated photonics due to its high Kerr nonlinearity and high-power handing capability. These features of Si3N4 are intrinsically beneficial for nanophotonics and optoelectronics applications. Here we report a low-loss integrated platform incorporating monolayer molybdenum ditelluride (1L-MoTe2) with Si3N4 photonic microresonators. We show that, with the 1L-MoTe2, microresonator quality factors exceeding 3 million in the telecommunication O-band to E-band are maintained. We further investigate the change of microresonator dispersion and resonance shift due to the presence of 1L-MoTe2, and extrapolate the optical loss introduced by 1L-MoTe2 in the telecommunication bands, out of the excitonic transition region. Our work presents a key step for low-loss, hybrid PICs with layered semiconductors without using heterogeneous wafer bonding. △ Less

Submitted 15 October, 2020; v1 submitted 12 October, 2020; originally announced October 2020.

Journal ref: Nano Letters 21, 2709 - 2718 (2021)

Ultrafast, Zero-Bias, Graphene Photodetectors with Polymeric Gate Dielectric on Passive Photonic Waveguides

Authors: Vaidotas Mišeikis, Simone Marconi, Marco A. Giambra, Alberto Montanaro, Leonardo Martini, Filippo Fabbri, Sergio Pezzini, Giulia Piccinini, Stiven Forti, Bernat Terrés, Ilya Goykhman, Louiza Hamidouche, Pierre Legagneux, Vito Sorianello, Andrea C. Ferrari, Frank H. L. Koppens, Marco Romagnoli, Camilla Coletti

Abstract: We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and… ▽ More We report compact, scalable, high-performance, waveguide integrated graphene-based photodetectors (GPDs) for telecom and datacom applications, not affected by dark current. To exploit the photothermoelectric (PTE) effect, our devices rely on a graphene-polymer-graphene stack with static top split gates. The polymeric dielectric, poly(vinyl alcohol) (PVA), allows us to preserve graphene quality and to generate a controllable p-n junction. Both graphene layers are fabricated using aligned single-crystal graphene arrays grown by chemical vapor deposition. The use of PVA yields a low charge inhomogeneity 8 x 10$^{10}$ $cm^{-2}$ at the charge neutrality point, and a large Seebeck coefficient 140 $μ$V K$^{-1}$, enhancing the PTE effect. Our devices are the fastest GPDs operating with zero dark current, showing a flat frequency response up to 67 GHz without roll-off. This performance is achieved on a passive, low-cost, photonic platform, and does not rely on nanoscale plasmonic structures. This, combined with scalability and ease of integration, makes our GPDs a promising building block for next-generation optical communication devices. △ Less

Submitted 11 September, 2020; originally announced September 2020.

Comments: 15 pages, 11 figures. Published under ACS AuthorChoice license

Journal ref: ACS Nano 14, 11190 (2020)

High-responsivity graphene photodetectors integrated on silicon microring resonators

Authors: Simone Schuler, Jakob E. Muench, Alfonso Ruocco, Osman Balci, Dries van Thourhout, Vito Sorianello, Marco Romagnoli, Kenji Watanabe, Takashi Taniguchi, Ilya Goykhman, Andrea C. Ferrari, Thomas Mueller

Abstract: Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input… ▽ More Graphene integrated photonics provides several advantages over conventional Si photonics. Single layer graphene (SLG) enables fast, broadband, and energy-efficient electro-optic modulators, optical switches and photodetectors (GPDs), and is compatible with any optical waveguide. The last major barrier to SLG-based optical receivers lies in the low responsivity - electrical output per optical input - of GPDs compared to conventional PDs. Here we overcome this shortfall by integrating a photo-thermoelectric GPD with a Si microring resonator. Under critical coupling, we achieve $>$90% light absorption in a $\sim$6 $μ$m SLG channel along the Si waveguide. Exploiting the cavity-enhanced light-matter interaction, causing carriers in SLG to reach $\sim$400 K for an input power of $\sim$0.6 mW, we get a voltage responsivity $\sim$90 V/W, demonstrating the feasibility of our approach. Our device is capable of detecting data rates up to 20 Gbit/s, with a receiver sensitivity enabling it to operate at a 10$^{-9}$ bit-error rate, on par with mature semiconductor technology. The natural generation of a voltage rather than a current, removes the need for transimpedance amplification, with a reduction of the energy-per-bit cost and foot-print, when compared to a traditional semiconductor-based receiver. △ Less

Submitted 6 July, 2020; originally announced July 2020.

Comments: 11 pages, 5 figures

Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies

Authors: Leonardo Viti, Alisson R. Cadore, Xinxin Yang, Andrei Vorobiev, Jakob E. Muench, Kenji Watanabe, Takashi Taniguchi, Jan Stake, Andrea C. Ferrari, Miriam S. Vitiello

Abstract: Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots… ▽ More Ultrafast and sensitive (noise equivalent power <1 nWHz-1/2) light-detection in the Terahertz (THz) frequency range (0.1-10 THz) and at room-temperature is key for applications such as time-resolved THz spectroscopy of gases, complex molecules and cold samples, imaging, metrology, ultra-high-speed data communications, coherent control of quantum systems, quantum optics and for capturing snapshots of ultrafast dynamics, in materials and devices, at the nanoscale. Here, we report room-temperature THz nano-receivers exploiting antenna-coupled graphene field effect transistors integrated with lithographically-patterned high-bandwidth (~100 GHz) chips, operating with a combination of high speed (hundreds ps response time) and high sensitivity (noise equivalent power <120 pWHz-1/2) at 3.4 THz. Remarkably, this is achieved with various antenna and transistor architectures (single-gate, dual-gate), whose operation frequency can be extended over the whole 0.1-10 THz range, thus paving the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspective for targeting the aforementioned applications. △ Less

Submitted 24 June, 2020; v1 submitted 18 June, 2020; originally announced June 2020.

Comments: This is the unedited authors' version of the article accepted for publication in Nanophotonics 2020 (Online ISSN: 2192-8614)

HBN-encapsulated, graphene-based room-temperature terahertz receivers with high speed and low noise

Authors: Leonardo Viti, David G. Purdie, Antonio Lombardo, Andrea C. Ferrari, Miriam S. Vitiello

Abstract: Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide… ▽ More Uncooled Terahertz (THz) photodetectors (PDs) showing fast (ps) response and high sensitivity (noise equivalent power (NEP) < $nWHz^{-1/2}$) over a broad (0.5THz-10THz) frequency range are needed for applications in high-resolution spectroscopy (relative accuracy ~ $10^{-11}$), metrology, quantum information, security, imaging, optical communications. However, present THz receivers cannot provide the required balance between sensitivity, speed, operation temperature and frequency range. Here, we demonstrate an uncooled THz PD combining the low (~2000 $k_{B}μm^{-2}$) electronic specific heat of high mobility (> 50000 $cm^{2}V^{-1}s^{-1}$) hBN-encapsulated graphene with the asymmetric field-enhancement produced by a bow-tie antenna resonating at 3 THz. This produces a strong photo-thermoelectric conversion, which simultaneously leads to a combination of high sensitivity (NEP $\leq$ 160 $pWHz^{-1/2}$), fast response time ($\leq 3.3 ns$) and a four orders of magnitude dynamic range, making our devices the fastest, broadband, low noise, room temperature THz PD to date. △ Less

Submitted 21 April, 2020; originally announced April 2020.

Comments: This is the unedited authors' version of the submitted article, published in its final form at http://dx.doi.org/10.1021/acs.nanolett.9b05207 16 Pages, 4 Figures

Strongly coupled coherent phonons in single-layer MoS$_2$

Authors: C. Trovatello, H. P. C. Miranda, A. Molina-Sánchez, R. Borrego Varillas, C. Manzoni, L. Moretti, L. Ganzer, M. Maiuri, J. Wang, D. Dumcenco, A. Kis, L. Wirtz, A. Marini, G. Soavi, A. C. Ferrari, G. Cerullo, D. Sangalli, S. Dal Conte

Abstract: We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), wher… ▽ More We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range. △ Less

Submitted 29 December, 2019; originally announced December 2019.

Journal ref: ACS Nano 14, 5700 (2020)

Graphene/Polyelectrolyte Layer-by-Layer Coatings for Electromagnetic Interference Shielding

Authors: Cristina Valles, Xiao Zhang, Jianyun Cao, Fei Lin, Robert J. Young, Antonio Lombardo, Andrea C. Ferrari, Laura Burk, Rolf Mulhaupt, Ian A. Kinloch

Abstract: Electromagnetic interference (EMI) shielding coating materials with thicknesses in the microscale are required in many sectors, including communications, medical, aerospace and electronics, to isolate the electromagnetic radiation emitted from electronic equipment. We report a spray, layer-by-layer (LbL) coating approach to fabricate micron thick, highly-ordered and electrically-conductive coating… ▽ More Electromagnetic interference (EMI) shielding coating materials with thicknesses in the microscale are required in many sectors, including communications, medical, aerospace and electronics, to isolate the electromagnetic radiation emitted from electronic equipment. We report a spray, layer-by-layer (LbL) coating approach to fabricate micron thick, highly-ordered and electrically-conductive coatings with exceptional EMI shielding effectiveness (EMI SE >4830 dB/mm), through the alternating self-assembly of negatively-charged reduced graphene oxide (RGO) and a positively-charged polyelectrolyte (PEI). The microstructure and resulting electrical properties of the (PEI/RGO)n LbL structures are studied as function of increasing mass of graphene deposited per cycle (kee** the PEI content constant), number of deposited layers (n), flake diameter and type of RGO. A strong effect of the lateral flake dimensions on the electrical properties is observed, which also influences the EMI SE. A maximum EMI SE of 29 dB is obtained for a 6 um thick (PEI/RGO)10 coating with 19 vol.% loading of reduced electrochemically-exfoliated graphene oxide flakes with diameters ~3um. This SE performance exceeds those previously reported for thicker graphene papers and bulk graphene/polymer composite films with higher RGO or graphene nanoplatelets contents, which represents an important step towards the fabrication of thin and light-weight high-performance EMI shielding structures. △ Less

Submitted 25 June, 2019; originally announced June 2019.

Comments: 34 pages,7 figures

Screen-printed and spray coated graphene-based RFID transponders

Authors: K. Jaakkola, V. Ermolov, P. G. Karagiannidis, S. A. Hodge, L. Lombardi, X. Zhang, R. Grenman, H. Sandberg, A. Lombardo, A. C. Ferrari

Abstract: We report Ultra-High-Frequency (UHF, 800MHz-1GHz) Radio Frequency Identification (RFID) transponders consisting of printed dipole antennas combined with RFID microchips. These are fabricated on Kapton via screen printing and on paper via spray coating, using inks obtained via microfluidization of graphite. We introduce a hybrid antenna structure, where an Al loop (small compared to the overall siz… ▽ More We report Ultra-High-Frequency (UHF, 800MHz-1GHz) Radio Frequency Identification (RFID) transponders consisting of printed dipole antennas combined with RFID microchips. These are fabricated on Kapton via screen printing and on paper via spray coating, using inks obtained via microfluidization of graphite. We introduce a hybrid antenna structure, where an Al loop (small compared to the overall size of the antenna) is connected to a microchip with the double function of matching the impedances of antenna and microchip and avoiding bonding between exfoliated graphite and chip. The transponders have reading distance~11m at UHF RFID frequencies, larger than previously reported for graphene-based RFID and comparable with commercial transponders based on metallic antennas. △ Less

Submitted 3 March, 2019; originally announced June 2019.

Journal ref: 2d Materials 7, 015019 (2020)

Graphene-Based Integrated Photonics For Next-Generation Datacom And Telecom

Authors: M. Romagnoli, V. Sorianello, M. Midrio, F. H. L. Koppens, C. Huyghebaert, D. Neumaier, P. Galli, W. Templ, A. D'Errico, A. C. Ferrari

Abstract: Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10$^{-3}$. It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipa… ▽ More Graphene is an ideal material for optoelectronic applications. Its photonic properties give several advantages and complementarities over Si photonics. For example, graphene enables both electro-absorption and electro-refraction modulation with an electro-optical index change exceeding 10$^{-3}$. It can be used for optical add-drop multiplexing with voltage control, eliminating the current dissipation used for the thermal detuning of microresonators, and for thermoelectric-based ultrafast optical detectors that generate a voltage without transimpedance amplifiers. Here, we present our vision for grapheme-based integrated photonics. We review graphene-based transceivers and compare them with existing technologies. Strategies for improving power consumption, manufacturability and wafer-scale integration are addressed. We outline a roadmap of the technological requirements to meet the demands of the datacom and telecom markets. We show that graphene based integrated photonics could enable ultrahigh spatial bandwidth density , low power consumption for board connectivity and connectivity between data centres, access networks and metropolitan, core, regional and long-haul optical communications. △ Less

Submitted 2 June, 2019; originally announced June 2019.

Journal ref: Nature Reviews Materials 3, 392(2018)

Graphene Overcoats for Ultra-High Storage Density Magnetic Media

Authors: N. Dwivedi, A. K. Ott, K. Sasikumar, C. Dou, R. J. Yeo, B. Narayanan, U. Sassi, D. De Fazio, G. Soavi, T. Dutta, S. K. R. S. Sankaranarayanan, A. C. Ferrari, C. S. Bhatia

Abstract: Hard disk drives (HDDs) are used as secondary storage in a number of digital electronic devices owing to low cost ($<$0.1\$/GB at 2016 prices) and large data storage capacity (10TB with a 3.5 inch HDD). Due to the exponentially increasing amount of data, there is a need to increase areal storage densities beyond$\sim$1Tb/in$^2$. This requires the thickness of carbon overcoats (COCs) to be$<… ▽ More Hard disk drives (HDDs) are used as secondary storage in a number of digital electronic devices owing to low cost ($<$0.1\$/GB at 2016 prices) and large data storage capacity (10TB with a 3.5 inch HDD). Due to the exponentially increasing amount of data, there is a need to increase areal storage densities beyond$\sim$1Tb/in$^2$. This requires the thickness of carbon overcoats (COCs) to be$<$2nm. Friction, wear, corrosion, and thermal stability are critical concerns$<$2nm, where most of the protective properties of current COCs are lost. This limits current technology and restricts COC integration with heat assisted magnetic recording technology (HAMR), since this also requires laser irradiation stability. Here we show that graphene-based overcoats can overcome all these limitations. 2-4 layers of graphene enable two-fold reduction in friction and provide better corrosion and wear than state-of-the-art COCs. A single graphene layer is enough to reduce corrosion$\sim$2.5 times. We also show that graphene can withstand HAMR conditions. Thus, graphene-based overcoats can enable ultrahigh areal density HDDs$>$10Tb/in$^2$. △ Less

Submitted 2 June, 2019; originally announced June 2019.

Journal ref: Nature Commun. 12, 2854 (2021)

Optoelectronic mixing with high frequency graphene transistors

Authors: Alberto Montanaro, Wei Wei, Domenico De Fazio, Ugo Sassi, Giancarlo Soavi, Andrea C Ferrari, Henri Happy, Pierre Legagneux, Emiliano Pallecchi

Abstract: Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave appl… ▽ More Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems. △ Less

Submitted 23 May, 2019; originally announced May 2019.

Waveguide-integrated, plasmonic enhanced graphene photodetectors

Authors: J. E. Muench, A. Ruocco, M. A. Giambra, V. Miseikis, D. Zhang, J. Wang, H. F. Y. Watson, G. C. Park, S. Akhavan, V. Sorianello, M. Midrio, A. Tomadin, C. Coletti, M. Romagnoli, A. C. Ferrari, I. Goykhman

Abstract: We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneou… ▽ More We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules △ Less

Submitted 11 May, 2019; originally announced May 2019.

Journal ref: Nano Lett 19, 7632 (2019)

Niobium diselenide superconducting photodetectors

Authors: Gavin J. Orchin, Domenico De Fazio, Angelo Di Bernardo, Matthew Hamer, Duhee Yoon, Alisson R. Cadore, Ilya Goykhman, Kenji Watanabe, Takashi Taniguchi, Jason W. A. Robinson, Roman V. Gorbachev, Andrea C. Ferrari, Robert H. Hadfield

Abstract: We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical map** in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken… ▽ More We report the photoresponse of niobium diselenide (NbSe$_2$), a transition metal dichalcogenide (TMD) which exhibits superconducting properties down to a single layer. Devices are built by using micro-mechanically cleaved 2 to 10 layers and tested under current bias using nano-optical map** in the 350mK-5K range, where they are found to be superconducting. The superconducting state can be broken by absorption of light, resulting in a voltage signal when the devices are current biased. The response found to be energy dependent making the devices useful for applications requiring energy resolution, such as bolometry, spectroscopy and infrared imaging. △ Less

Submitted 6 March, 2019; originally announced March 2019.

Comments: 6 pages, 6 figures

Coherent anti-Stokes Raman Spectroscopy of single and multi-layer graphene

Authors: A. Virga, C. Ferrante, G. Batignani, D. De Fazio, A. D. G. Nunn, A. C. Ferrari, G. Cerullo, T. Scopigno

Abstract: We report stimulated Raman spectroscopy of the G phonon in both single and multi-layer graphene, through Coherent anti-Stokes Raman Scattering (CARS). The signal generated by the third order nonlinearity is dominated by a vibrationally non-resonant background (NVRB), which obscures the Raman lineshape. We demonstrate that the vibrationally resonant CARS peak can be measured by reducing the tempora… ▽ More We report stimulated Raman spectroscopy of the G phonon in both single and multi-layer graphene, through Coherent anti-Stokes Raman Scattering (CARS). The signal generated by the third order nonlinearity is dominated by a vibrationally non-resonant background (NVRB), which obscures the Raman lineshape. We demonstrate that the vibrationally resonant CARS peak can be measured by reducing the temporal overlap of the laser excitation pulses, suppressing the NVRB. We model the observed spectra, taking into account the electronically resonant nature of both CARS and NVRB. We show that CARS can be used for graphene imaging with vibrational sensitivity. △ Less

Submitted 21 January, 2019; originally announced January 2019.

Comments: 10 pages, 5 figures

Wavelength tunable soliton rains in a nanotube-mode locked Tm-doped fiber laser

Authors: B. Fu, D. Popa, Z. Zhao, S. A. Hussain, E. Flahaut, T. Hasan, A. C. Ferrari

Abstract: We report soliton rains in a tuneable Tm-doped fiber laser mode locked by carbon nanotubes. We also detect their second- and third-harmonic. We achieve a tuneability of over 56nm, from 1877 to 1933nm, by introducing a polarization-maintaining isolator and two in-line polarization controllers. This makes our system promising as a tuneable filter for ultrafast spectroscopy. We report soliton rains in a tuneable Tm-doped fiber laser mode locked by carbon nanotubes. We also detect their second- and third-harmonic. We achieve a tuneability of over 56nm, from 1877 to 1933nm, by introducing a polarization-maintaining isolator and two in-line polarization controllers. This makes our system promising as a tuneable filter for ultrafast spectroscopy. △ Less

Submitted 7 July, 2018; originally announced July 2018.

Journal ref: Appl. Phys. Lett. 113, 193102 (2018)

Graphene Reflectarray Metasurface for Terahertz Beam Steering and Phase Modulation

Authors: Michele Tamagnone, Santiago Capdevila, Antonio Lombardo, **gbo Wu, Alba Centeno, Amaia Zurutuza, Adrian M. Ionescu, Andrea C. Ferrari, Juan R. Mosig

Abstract: We report a THz reflectarray metasurface which uses graphene as active element to achieve beam steering, sha** and broadband phase modulation. This is based on the creation of a voltage controlled reconfigurable phase hologram, which can impart different reflection angles and phases to an incident beam, replacing bulky and fragile rotating mirrors used for terahertz imaging. This can also find a… ▽ More We report a THz reflectarray metasurface which uses graphene as active element to achieve beam steering, sha** and broadband phase modulation. This is based on the creation of a voltage controlled reconfigurable phase hologram, which can impart different reflection angles and phases to an incident beam, replacing bulky and fragile rotating mirrors used for terahertz imaging. This can also find applications in other regions of the electromagnetic spectrum, paving the way to versatile optical devices including light radars, adaptive optics, electro-optical modulators and screens. △ Less

Submitted 11 June, 2018; v1 submitted 5 June, 2018; originally announced June 2018.

Comments: 16 pages, 10 figures

Scalar Nanosecond Pulse Generation in a Nanotube Mode-Locked Environmentally Stable Fiber Laser

Authors: R. I. Woodward, E. J. R. Kelleher, D. Popa, T. Hasan, F. Bonaccorso, A. C. Ferrari, S. V. Popov, J. R. Taylor

Abstract: We report an environmentally stable nanotube mode-locked fibre laser producing linearly-polarized, nanosecond pulses. A simple all-polarization-maintaining fibre ring cavity is used, including 300 m of highly nonlinear fibre to elongate the cavity and increase intracavity dispersion and nonlinearity. The laser generates scalar pulses with a duration of 1.23 ns at a centre wavelength of 1042 nm, wi… ▽ More We report an environmentally stable nanotube mode-locked fibre laser producing linearly-polarized, nanosecond pulses. A simple all-polarization-maintaining fibre ring cavity is used, including 300 m of highly nonlinear fibre to elongate the cavity and increase intracavity dispersion and nonlinearity. The laser generates scalar pulses with a duration of 1.23 ns at a centre wavelength of 1042 nm, with 1.3-nm bandwidth and at 641-kHz repetition rate. Despite the long cavity, the output characteristics show no significant variation when the cavity is perturbed, and the degree of polarization remains at 97%. △ Less

Submitted 7 May, 2018; originally announced May 2018.

Journal ref: IEEE Photon, Tech. Lett. 26, 1672-1675 (2014)

Tetrahedral amorphous carbon resistive memories with graphene-based electrodes

Authors: A. K. Ott, C. Dou, U. Sassi, I. Goykhman, D. Yoon, J. Wu, A. Lombardo, A. C. Ferrari

Abstract: Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios$\sim$4x$10^5$, ten times higher than with metal electro… ▽ More Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios$\sim$4x$10^5$, ten times higher than with metal electrodes, with no increase in switching power, and low power density$\sim$14$μ$W/$μ$m$^2$. We attribute this to a suppressed tunneling current due to the low density of states of graphene near the Dirac point, consistent with the current-voltage characteristics derived from a quantum point contact model. Our devices also have multiple resistive states. This allows storing more than one bit per cell. This can be exploited in a range of signal processing/computing-type operations, such as implementing logic, providing synaptic and neuron-like mimics, and performing analogue signal processing in non-von-Neumann architectures △ Less

Submitted 5 May, 2018; originally announced May 2018.

Journal ref: 2d Materials 5, 045028 (2018)

Broadband, electrically tuneable, third harmonic generation in graphene

Authors: G. Soavi, G. Wang, H. Rostami, D. Purdie, D. De Fazio, T. Ma, B. Luo, J. Wang, A. K. Ott, D. Yoon, S. Bourelle, J. E. Muench, I. Goykhman, S. Dal Conte, M. Celebrano, A. Tomadin, M. Polini, G. Cerullo, A. C. Ferrari

Abstract: Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong-light matter interaction and electrically and broadband tunable third order nonlinear susceptibility. Here we s… ▽ More Optical harmonic generation occurs when high intensity light ($>10^{10}$W/m$^{2}$) interacts with a nonlinear material. Electrical control of the nonlinear optical response enables applications such as gate-tunable switches and frequency converters. Graphene displays exceptionally strong-light matter interaction and electrically and broadband tunable third order nonlinear susceptibility. Here we show that the third harmonic generation efficiency in graphene can be tuned by over two orders of magnitude by controlling the Fermi energy and the incident photon energy. This is due to logarithmic resonances in the imaginary part of the nonlinear conductivity arising from multi-photon transitions. Thanks to the linear dispersion of the massless Dirac fermions, ultrabroadband electrical tunability can be achieved, paving the way to electrically-tuneable broadband frequency converters for applications in optical communications and signal processing. △ Less

Submitted 6 October, 2017; originally announced October 2017.

Journal ref: Nature Nanotechnologyvolume 13, 583 (2018)

Vertically-Illuminated, Resonant-Cavity-Enhanced, Graphene-Silicon Schottky Photodetectors

Authors: M. Casalino, U. Sassi, I. Goykhman, A. Eiden, E. Lidorikis, S. Milana, D. De Fazio, F. Tomarchio, M. Iodice, G. Coppola, A. C. Ferrari

Abstract: We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wave… ▽ More We report vertically-illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. Our devices have wavelength-dependent photoresponse with external (internal) responsivity~20mA/W (0.25A/W). The spectral-selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for develo** high responsivity hybrid graphene-Si free-space illuminated PDs for free-space optical communications, coherence optical tomography and light-radars △ Less

Submitted 8 July, 2017; originally announced August 2017.

Journal ref: ACS Nano 11, 10955 (2017)

Raman spectroscopy of graphene under ultrafast laser excitation

Authors: C. Ferrante, A. Virga, L. Benfatto, M. Martinati, D. De Fazio, U. Sassi, C. Fasolato, A. K. Ott, P. Postorino, D. Yoon, G. Cerullo, F. Mauri, A. C. Ferrari, T. Scopigno

Abstract: The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron-phonon interactions, however their non-equilibrium properties in the presence of hot charge carriers are still not fully explored. Here we study the Raman spectrum of graphene under ultrafast laser excitation with 3ps pulses, which trade off between impulsive stimulation and spectral resolutio… ▽ More The equilibrium optical phonons of graphene are well characterized in terms of anharmonicity and electron-phonon interactions, however their non-equilibrium properties in the presence of hot charge carriers are still not fully explored. Here we study the Raman spectrum of graphene under ultrafast laser excitation with 3ps pulses, which trade off between impulsive stimulation and spectral resolution. We localize energy into hot carriers, generating non-equilibrium temperatures in the ~1700-3100K range, far exceeding that of the phonon bath, while simultaneously detecting the Raman response. The linewidth of both G and 2D peaks show an increase as function of the electronic temperature. We explain this as a result of the Dirac cones' broadening and electron-phonon scattering in the highly excited transient regime, important for the emerging field of graphene-based photonics and optoelectronics. △ Less

Submitted 14 February, 2018; v1 submitted 1 April, 2017; originally announced April 2017.

Comments: 10 pages, 7 figures

Journal ref: Nat. Commun.,9, 308 (2018)

Graphene-based, mid-infrared, room-temperature pyroelectric bolometers with ultrahigh temperature coefficient of resistance

Authors: U. Sassi, R. Parret, S. Nanot, M. Bruna, S. Borini, S. Milana, D. De Fazio, Z. Zhuang, E. Lidorikis, F. H. L. Koppens, A. C. Ferrari, A. Colli

Abstract: Graphene is ideally suited for photonic and optoelectronic applications, with a variety of photodetectors (PDs) in the visible, near-infrared (NIR), and THz reported to date, as well as thermal detectors in the mid-infrared (MIR). Here, we present a room temperature-MIR-PD where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for g… ▽ More Graphene is ideally suited for photonic and optoelectronic applications, with a variety of photodetectors (PDs) in the visible, near-infrared (NIR), and THz reported to date, as well as thermal detectors in the mid-infrared (MIR). Here, we present a room temperature-MIR-PD where the pyroelectric response of a LiNbO3 crystal is transduced with high gain (up to 200) into resistivity modulation for graphene, leading to a temperature coefficient of resistance up to 900%/K, two orders of magnitude higher than the state of the art, for a device area of 300x300um2. This is achieved by fabricating a floating metallic structure that concentrates the charge generated by the pyroelectric substrate on the top-gate capacitor of the graphene channel. This allows us to resolve temperature variations down to 15umK at 1 Hz, paving the way for a new generation of detectors for MIR imaging and spectroscopy △ Less

Submitted 1 August, 2016; originally announced August 2016.

Journal ref: Nature Communications 8, 14311 (2017)

Few-cycle pulses from a graphene mode-locked all-fiber laser

Authors: D. Purdie, D. Popa, V. J. Wittwer, Z. Jiang, G. Bonacchini, F. Torrisi, S. Milana, E. Lidorikis, A. C. Ferrari

Abstract: We combine a graphene mode-locked oscillator with an external compressor and achieve~29fs pulses with~52mW average power. This is a simple, low-cost, and robust setup, entirely fiber based, with no free-space optics, for applications requiring high temporal resolution. We combine a graphene mode-locked oscillator with an external compressor and achieve~29fs pulses with~52mW average power. This is a simple, low-cost, and robust setup, entirely fiber based, with no free-space optics, for applications requiring high temporal resolution. △ Less

Submitted 7 April, 2015; originally announced April 2015.

Journal ref: Appl. Phys. Lett. 106, 253101 (2015)

Ultrafast and widely tuneable vertical-external-cavity surface-emitting laser, mode-locked by a graphene-integrated distributed Bragg reflector

Authors: C. A. Zaugg, Z. Sun, V. J. Wittwer, D. Popa, S. Milana, T. Kulmala, R. S. Sundaram, M. Mangold, O. D. Sieber, M. Golling, Y. Lee, J. H. Ahn, A. C. Ferrari, U. Keller

Abstract: We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected ligh… ▽ More We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to$\sim$0. We use this to mode-lock a VECSEL from 935 to 981nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors, dielectric coatings on gain materials. Conversely, it can also be used to increase absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors. △ Less

Submitted 8 October, 2013; originally announced October 2013.

Journal ref: Optics Expr. 21, 31548 (2013)

1.5 GHz Pulse Generation From a Monolithic Waveguide Laser With a Graphene-Film Saturable Output Coupler

Authors: R. Mary, S. J. Beecher, G. Brown, F. Torrisi, S. Milana, D. Popa, T. Hasan, Z. Sun, E. Lidorikis, S. Ohara, A. C. Ferrari, A. K. Kar

Abstract: We fabricate a saturable absorber mirror by coating a graphene film on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode pumped linear cavity waveguide laser inscribed in Ytterbium-doped Bismuthate Glass, with high slope and optical conversion efficiencies. The laser produces mode-locked pulses at 1039nm, with 1.5GHz repetition rate at an average 202mW outp… ▽ More We fabricate a saturable absorber mirror by coating a graphene film on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode pumped linear cavity waveguide laser inscribed in Ytterbium-doped Bismuthate Glass, with high slope and optical conversion efficiencies. The laser produces mode-locked pulses at 1039nm, with 1.5GHz repetition rate at an average 202mW output power. This performance is due to the combination of the graphene saturable absorber with the high quality laser glass. △ Less

Submitted 14 December, 2012; originally announced December 2012.

Journal ref: Optics Express 21, 7943 (2013)

2μm Solid-State Laser Mode-locked By Single-Layer Graphene

Authors: A. A. Lagatsky, Z. Sun, T. S. Kulmala, R. S. Sundaram, S. Milana, F. Torrisi, O. L. Antipov, Y. Lee, J. H. Ahn, C. T. A. Brown, W. Sibbett, A. C. Ferrari

Abstract: We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing. We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing. △ Less

Submitted 25 October, 2012; originally announced October 2012.

Journal ref: Appl. Phys. Lett. 102, 013113 (2013)

Tm-doped fiber laser mode-locked by graphene-polymer composite

Authors: M. Zhang, E. J. R. Kelleher, F. Torrisi, Z. Sun, T. Hasan, D. Popa, F. Wang, A. C. Ferrari, S. V. Popov, J. R. Taylor

Abstract: We demonstrate mode-locking of a thulium-doped fiber laser operating at 1.94μm, using a graphene-based saturable absorber. The laser outputs 3.6ps pulses, with~0.4nJ energy and an amplitude fluctuation~0.5%, at 6.46MHz. This is a simple, low-cost, stable and convenient laser oscillator for applications where eye-safe and low-photon-energy light sources are required, such as sensing and biomedical… ▽ More We demonstrate mode-locking of a thulium-doped fiber laser operating at 1.94μm, using a graphene-based saturable absorber. The laser outputs 3.6ps pulses, with~0.4nJ energy and an amplitude fluctuation~0.5%, at 6.46MHz. This is a simple, low-cost, stable and convenient laser oscillator for applications where eye-safe and low-photon-energy light sources are required, such as sensing and biomedical diagnostics △ Less

Submitted 8 August, 2012; originally announced August 2012.

Journal ref: Optics Express 20, 25077 (2012)

Wideband tunable, graphene-mode locked, ultrafast laser

Authors: Z. Sun, D. Popa, T. Hasan, F. Torrisi, F. Wang, E. J. R. Kelleher, J. C. Travers, A. C. Ferrari

Abstract: We report a tunable ultrafast fiber laser mode-locked with a graphene saturable absorber. The linear dispersions of the Dirac electrons in graphene enable wideband tunability. We get ~1ps pulses, tunable between 1525 and 1559nm, demonstrating graphene as a broadband saturable absorber. We report a tunable ultrafast fiber laser mode-locked with a graphene saturable absorber. The linear dispersions of the Dirac electrons in graphene enable wideband tunability. We get ~1ps pulses, tunable between 1525 and 1559nm, demonstrating graphene as a broadband saturable absorber. △ Less

Submitted 24 March, 2010; originally announced March 2010.

Journal ref: Nano Research 3, 653 (2010)