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On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands
Authors:
Mohd Saif Shaikh,
Shuyu Wen,
Mircea-Traian Catuneanu,
Mao Wang,
Artur Erbe,
Slawomir Prucnal,
Lars Rebohle,
Shengqiang Zhou,
Kambiz Jamshidi,
Manfred Helm,
Yonder Berencén
Abstract:
Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wave…
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Photonic integrated circuits require photodetectors that operate at room temperature with sensitivity at telecom wavelengths and are suitable for integration with planar complementary-metal-oxide-semiconductor (CMOS) technology. Silicon hyperdoped with deep-level impurities is a promising material for silicon infrared detectors because of its strong room-temperature photoresponse in the short-wavelength infrared region caused by the creation of an impurity band within the silicon band gap. In this work, we present the first experimental demonstration of lateral Te-hyperdoped Si PIN photodetectors operating at room temperature in the optical telecom bands. We provide a detailed description of the fabrication process, working principle, and performance of the photodiodes, including their key figure of merits. Our results are promising for the integration of active and passive photonic elements on a single Si chip, leveraging the advantages of planar CMOS technology.
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Submitted 2 May, 2023;
originally announced May 2023.
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Mid- and far-infrared localized surface plasmon resonances in chalcogen-hyperdoped silicon
Authors:
Mao Wang,
Ye Yu,
Slawomir Prucnal,
Yonder Berencén,
Mohd Saif Shaikh,
Lars Rebohle,
Muhammad Bilal Khan,
Vitaly Zviagin,
René Hübner,
Alexej Pashkin,
Artur Erbe,
Yordan M. Georgiev,
Marius Grundmann,
Manfred Helm,
Robert Kirchner,
Shengqiang Zhou
Abstract:
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the sp…
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Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior than the traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the one-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.
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Submitted 7 October, 2022;
originally announced October 2022.
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A photonic platform hosting telecom photon emitters in silicon
Authors:
Michael Hollenbach,
Nagesh S. Jagtap,
Ciarán Fowley,
Juan Baratech,
Verónica Guardia-Arce,
Ulrich Kentsch,
Anna Eichler-Volf,
Nikolay V. Abrosimov,
Artur Erbe,
ChaeHo Shin,
Hakseong Kim,
Manfred Helm,
Woo Lee,
Georgy V. Astakhov,
Yonder Berencén
Abstract:
Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a…
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Silicon, a ubiquitous material in modern computing, is an emerging platform for realizing a source of indistinguishable single-photons on demand. The integration of recently discovered single-photon emitters in silicon into photonic structures, is advantageous to exploit their full potential for integrated photonic quantum technologies. Here, we show the integration of telecom photon emitters in a photonic platform consisting of silicon nanopillars. We developed a CMOS-compatible nanofabrication method, enabling the production of thousands of individual nanopillars per square millimeter with state-of-the-art photonic-circuit pitch, all the while being free of fabrication-related radiation damage defects. We found a waveguiding effect of the 1278 nm-G center emission along individual pillars accompanied by improved brightness, photoluminescence signal-to-noise ratio and photon extraction efficiency compared to that of bulk silicon. These results unlock clear pathways to monolithically integrating single-photon emitters into a photonic platform at a scale that matches the required pitch of quantum photonic circuits.
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Submitted 5 December, 2021;
originally announced December 2021.
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Enhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure
Authors:
Juanmei Duan,
Phanish Chava,
Mahdi Ghorbani-Asl,
Denise Erb,
Liang Hu,
Arkady V. Krasheninnikov,
Harald Schneider,
Lars Rebohle,
Artur Erbe,
Manfred Helm,
Yu-Jia Zeng,
Shengqiang Zhou,
Slawomir Prucnal
Abstract:
Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is impo…
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Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is important to enhance the trion emission and its stability. In this study, we construct a MoSe2/FePS3 van der Waals heterostructure (vdWH) with type-I band alignment, which allows for carriers injection from FePS3 to MoSe2. At low temperatures, the neutral exciton (X0) emission in this vdWH is almost completely suppressed. The ITrion/Ix0 intensity ratio increases from 0.44 in a single MoSe2 monolayer to 20 in this heterostructure with the trion charging state changing from negative in the monolayer to positive in the heterostructure. The optical pum** with circularly polarized light shows a 14% polarization for the trion emission in MoSe2/FePS3. Moreover, forming such type-I vdWH also gives rise to a 20-fold enhancement of the room temperature photoluminescence from monolayer MoSe2. Our results demonstrate a novel approach to convert excitons to trions in monolayer 2D TMDCs via interlayer do** effect using type-I band alignment in vdWH.
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Submitted 26 July, 2021;
originally announced July 2021.
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Autocorrected Off-axis Holography of 2D Materials
Authors:
Felix Kern,
Martin Linck,
Daniel Wolf,
Nasim Alem,
Himani Arora,
Sibylle Gemming,
Artur Erbe,
Alex Zettl,
Bernd Büchner,
Axel Lubk
Abstract:
The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electro…
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The reduced dimensionality in two-dimensional materials leads a wealth of unusual properties, which are currently explored for both fundamental and applied sciences. In order to study the crystal structure, edge states, the formation of defects and grain boundaries, or the impact of adsorbates, high resolution microscopy techniques are indispensible. Here we report on the development of an electron holography (EH) transmission electron microscopy (TEM) technique, which facilitates high spatial resolution by an automatic correction of geometric aberrations. Distinguished features of EH beyond conventional TEM imaging are the gap-free spatial information signal transfer and higher dose efficiency for certain spatial frequency bands as well as direct access to the projected electrostatic potential of the 2D material. We demonstrate these features at the example of h-BN, at which we measure the electrostatic potential as a function of layer number down to the monolayer limit and obtain evidence for a systematic increase of the potential at the zig-zag edges.
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Submitted 25 June, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Sub-surface modifications in silicon with ultrashort pulsed lasers above 2 microns
Authors:
Roland A. Richter,
Nikolai Tolstik,
Sebastien Rigaud,
Paul Dalla Valle,
Andreas Erbe,
Petra Ebbinghaus,
Ignas Astrauskas,
Vladimir Kalashnikov,
Evgeni Sorokin,
Irina T. Sorokina
Abstract:
Nonlinear optical phenomena in silicon such as self-focusing and multi-photon absorption are strongly dependent on the wavelength, energy and duration of the exciting pulse. Thus, a pronounced wavelength dependence of the sub-surface modifications with ultra-short pulsed lasers exists, especially for wavelengths > 2 $μ$m. This wavelength dependence is investigated for wavelengths in the range of 1…
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Nonlinear optical phenomena in silicon such as self-focusing and multi-photon absorption are strongly dependent on the wavelength, energy and duration of the exciting pulse. Thus, a pronounced wavelength dependence of the sub-surface modifications with ultra-short pulsed lasers exists, especially for wavelengths > 2 $μ$m. This wavelength dependence is investigated for wavelengths in the range of 1950-2400 nm, at a pulse duration between 0.5-10 ps and the pulse energy varying from 1 $μ$J to 1 mJ. Numerical and experimental analyses have been performed on both the surface and sub-surface of Si wafers processed with fibre-based lasers built in-house that operate in this wavelength range. The results have been compared to the literature data at 1550 nm. The analysis carried out has shown that due to a dip in the nonlinear absorption spectrum and a peak in the spectrum of the third-order non-linearity, the wavelengths between 2000 - 2200 nm are more favourable for creating sub-surface modifications in silicon. This is the case even though those wavelengths do not allow as tight a focusing as those at 1550 nm in the linear regime. This problem is compensated by an increased self-focusing due to the nonlinear Kerr-effect around 2100 nm at high light intensities, characteristic for ultra-short pulses.
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Submitted 9 January, 2020; v1 submitted 30 July, 2019;
originally announced July 2019.
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Observation of ultrafast solid-density plasma dynamics using femtosecond X-ray pulses from a free-electron laser
Authors:
Thomas Kluge,
Melanie Rödel,
Josefine Metzkes,
Alexander Pelka,
Alejandro Laso Garcia,
Irene Prencipe,
Martin Rehwald,
Motoaki Nakatsutsumi,
Emma E. McBride,
Tommy Schönherr,
Marco Garten,
Nicholas J. Hartley,
Malte Zacharias,
Arthur Erbe,
Yordan M. Georgiev,
Eric Galtier,
Inhyuk Nam,
Hae Ja Lee,
Siegfried Glenzer,
Michael Bussmann,
Christian Gutt,
Karl Zeil,
Christian Rödel,
Uwe Hübner,
Ulrich Schramm
, et al. (1 additional authors not shown)
Abstract:
The complex physics of the interaction between short pulse high intensity lasers and solids is so far hardly accessible by experiments. As a result of missing experimental capabilities to probe the complex electron dynamics and competing instabilities, this impedes the development of compact laser-based next generation secondary radiation sources, e.g. for tumor therapy [Bulanov2002,ledingham2007]…
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The complex physics of the interaction between short pulse high intensity lasers and solids is so far hardly accessible by experiments. As a result of missing experimental capabilities to probe the complex electron dynamics and competing instabilities, this impedes the development of compact laser-based next generation secondary radiation sources, e.g. for tumor therapy [Bulanov2002,ledingham2007], laboratory-astrophysics [Remington1999,Bulanov2015], and fusion [Tabak2014]. At present, the fundamental plasma dynamics that occur at the nanometer and femtosecond scales during the laser-solid interaction can only be elucidated by simulations. Here we show experimentally that small angle X-ray scattering of femtosecond X-ray free-electron laser pulses facilitates new capabilities for direct in-situ characterization of intense short-pulse laser plasma interaction at solid density that allows simultaneous nanometer spatial and femtosecond temporal resolution, directly verifying numerical simulations of the electron density dynamics during the short pulse high intensity laser irradiation of a solid density target. For laser-driven grating targets, we measure the solid density plasma expansion and observe the generation of a transient grating structure in front of the pre-inscribed grating, due to plasma expansion, which is an hitherto unknown effect. We expect that our results will pave the way for novel time-resolved studies, guiding the development of future laser-driven particle and photon sources from solid targets.
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Submitted 25 January, 2018;
originally announced January 2018.
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Sub-harmonic resonant excitation of confined acoustic modes at GHz frequencies with a high-repetition-rate femtosecond laser
Authors:
A. Bruchhausen,
R. Gebs,
F. Hudert,
D. Issenmann,
G. Klatt,
A. Bartels,
O. Schecker,
R. Waitz,
A. Erbe,
E. Scheer,
J. -R. Huntzinger,
A. Mlayah,
T. Dekorsy
Abstract:
We propose sub-harmonic resonant optical excitation with femtosecond lasers as a new method for the characterization of phononic and nanomechanical systems in the gigahertz to terahertz frequency range. This method is applied for the investigation of confined acoustic modes in a free-standing semiconductor membrane. By tuning the repetition rate of a femtosecond laser through a sub-harmonic of a m…
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We propose sub-harmonic resonant optical excitation with femtosecond lasers as a new method for the characterization of phononic and nanomechanical systems in the gigahertz to terahertz frequency range. This method is applied for the investigation of confined acoustic modes in a free-standing semiconductor membrane. By tuning the repetition rate of a femtosecond laser through a sub-harmonic of a mechanical resonance we amplify the mechanical amplitude, directly measure the linewidth with megahertz resolution, infer the lifetime of the coherently excited vibrational states, accurately determine the system's quality factor, and determine the amplitude of the mechanical motion with femtometer resolution.
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Submitted 6 December, 2010;
originally announced December 2010.
