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A Beam Monitor for Ion Beam Therapy based on HV-CMOS Pixel Detectors
Authors:
Matthias Balzer,
Alexander Dierlamm,
Felix Ehrler,
Ulrich Husemann,
Roland Koppenhöfer,
Ivan Perić,
Martin Pittermann,
Bogdan Topko,
Alena Weber,
Stephan Brons,
Jürgen Debus,
Nicole Grau,
Thomas Hansmann,
Oliver Jäkel,
Sebastian Klüter,
Jakob Naumann
Abstract:
Particle therapy is a well established clinical treatment of tumors. More than one hundred particle therapy centers are in operation world wide. The advantage of using hadrons like protons or carbon ions as particles for tumor irradiation is the distinct peak in the depth dependent energy deposition, which can be exploited to accurately deposit dose in the tumor cells. To guarantee this, high accu…
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Particle therapy is a well established clinical treatment of tumors. More than one hundred particle therapy centers are in operation world wide. The advantage of using hadrons like protons or carbon ions as particles for tumor irradiation is the distinct peak in the depth dependent energy deposition, which can be exploited to accurately deposit dose in the tumor cells. To guarantee this, high accuracy of monitoring and control of the particle beam is of utmost importance. Before the particle beam enters the patient, it traverses a monitoring system which has to give fast feedback to the beam control system on position and dose rate of the beam while minimally interacting with the beam. The multi-wire chambers mostly used as beam position monitor have their limitations when fast response time is required (drift time). Future developments like MRI-guided ion beam therapy pose additional challenges for the beam monitoring system like tolerance of magnetic fields and acoustic noise (vibrations). Solid-state detectors promise to overcome these limitations and the higher resolution they offer can create additional benefits. This article presents the evaluation of an HV-CMOS detector for beam monitoring, provides results from feasibility studies in a therapeutic beam and summarizes the concepts towards the final large-scale assembly and readout system.
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Submitted 11 November, 2022;
originally announced November 2022.
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Technical design of the phase I Mu3e experiment
Authors:
K. Arndt,
H. Augustin,
P. Baesso,
N. Berger,
F. Berg,
C. Betancourt,
D. Bortoletto,
A. Bravar,
K. Briggl,
D. vom Bruch,
A. Buonaura,
F. Cadoux,
C. Chavez Barajas,
H. Chen,
K. Clark,
P. Cooke,
S. Corrodi,
A. Damyanova,
Y. Demets,
S. Dittmeier,
P. Eckert,
F. Ehrler,
D. Fahrni,
S. Gagneur,
L. Gerritzen
, et al. (80 additional authors not shown)
Abstract:
The Mu3e experiment aims to find or exclude the lepton flavour violating decay $μ\rightarrow eee$ at branching fractions above $10^{-16}$. A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of $2\cdot 10^{-15}$. We present an overview of all aspects of the technical design and expected performance of the p…
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The Mu3e experiment aims to find or exclude the lepton flavour violating decay $μ\rightarrow eee$ at branching fractions above $10^{-16}$. A first phase of the experiment using an existing beamline at the Paul Scherrer Institute (PSI) is designed to reach a single event sensitivity of $2\cdot 10^{-15}$. We present an overview of all aspects of the technical design and expected performance of the phase~I Mu3e detector. The high rate of up to $10^{8}$ muon decays per second and the low momenta of the decay electrons and positrons pose a unique set of challenges, which we tackle using an ultra thin tracking detector based on high-voltage monolithic active pixel sensors combined with scintillating fibres and tiles for precise timing measurements.
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Submitted 26 August, 2021; v1 submitted 24 September, 2020;
originally announced September 2020.
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MuPix and ATLASPix -- Architectures and Results
Authors:
A. Schöning,
J. Anders,
H. Augustin,
M. Benoit,
N. Berger,
S. Dittmeier,
F. Ehrler,
A. Fehr,
T. Golling,
S. Gonzalez Sevilla,
J. Hammerich,
A. Herkert,
L. Huth,
G. Iacobucci,
D. Immig,
M. Kiehn,
J. Kröger,
F. Meier,
A. Meneses Gonzalez,
A. Miucci,
L. O. S. Noehte,
I. Peric,
M. Prathapan,
T. Rudzki,
R. Schimassek
, et al. (7 additional authors not shown)
Abstract:
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being dev…
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High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being developed for LHC applications with a triggered readout. Both variants have a fully monolithic design including state machines, clock circuitries and serial drivers. Several prototypes and design variants were characterised in the lab and in testbeam campaigns to measure efficiencies, noise, time resolution and radiation tolerance. Results from recent MuPix and ATLASPix prototypes are presented and prospects for future improvements are discussed.
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Submitted 17 February, 2020;
originally announced February 2020.
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Performance of the large scale HV-CMOS pixel sensor MuPix8
Authors:
H. Augustin,
N. Berger,
C. Blattgerste,
S. Dittmeier,
F. Ehrler,
C Grzesik,
J. Hammerich. A. Herkert,
L. Huth,
D. Immig,
A. Kozlinskiy,
M. Köppel,
J. Kröger,
F. Meier,
A. Meneses Gonzales,
M. Müller,
L. Noehte,
I. Perić,
M. Prathapan,
T. Rudzki,
R. Schimassek,
A. Schöning,
I. Sorokin,
F. Stieler,
A. Tyukin,
T. Wagner
, et al. (4 additional authors not shown)
Abstract:
The Mu3e experiment is searching for the charged lepton flavour violating decay $ μ^+\rightarrow e^+ e^- e^+ $, aiming for an ultimate sensitivity of one in $10^{16}$ decays. In an environment of up to $10^9$ muon decays per second the detector needs to provide precise vertex, time and momentum information to suppress accidental and physics background. The detector consists of cylindrical layers o…
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The Mu3e experiment is searching for the charged lepton flavour violating decay $ μ^+\rightarrow e^+ e^- e^+ $, aiming for an ultimate sensitivity of one in $10^{16}$ decays. In an environment of up to $10^9$ muon decays per second the detector needs to provide precise vertex, time and momentum information to suppress accidental and physics background. The detector consists of cylindrical layers of $50\, μ\text{m}$ thin High Voltage Monolithic Active Pixel Sensors (HV-MAPS) placed in a $1\,\text{T}$ magnetic field. The measurement of the trajectories of the decay particles allows for a precise vertex and momentum reconstruction. Additional layers of fast scintillating fibre and tile detectors provide sub-nanosecond time resolution. The MuPix8 chip is the first large scale prototype, proving the scalability of the HV-MAPS technology. It is produced in the AMS aH18 $180\, \text{nm}$ HV-CMOS process. It consists of three sub-matrices, each providing an untriggered datastream of more than $10\,\text{MHits}/\text{s}$. The latest results from laboratory and testbeam characterisation are presented, showing an excellent performance with efficiencies $>99.6\,\text{\%}$ and a time resolution better than $10\, \text{ns}$ achieved with time walk correction.
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Submitted 22 May, 2019;
originally announced May 2019.
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Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation
Authors:
D M S Sultan,
Sergio Gonzalez Sevilla,
Didier Ferrere,
Giuseppe Iacobucci,
Ettore Zaffaroni,
Winnie Wong,
Mateus Vicente Barrero Pinto,
Moritz Kiehn,
Mridula Prathapan,
Felix Ehrler,
Ivan Peric,
Antonio Miucci,
John Kenneth Anders,
Armin Fehr,
Michele Weber,
Andre Schoening,
Adrian Herkert,
Heiko Augustin,
Mathieu Benoit
Abstract:
In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor te…
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In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor technologies, i.e., larger readout input-capacitance, lower production-yield, and higher production and integration cost, can be downscaled. The large electrode design using high-resistivity substrates actively helps to mitigate the charge-trap** effects, making these chips radiation hard. The surface and bulk damage induced in high irradiation environment change the effective do** concentration of the device, which modulates high electric fields as the reverse-bias voltage increases. This effect can cause high leakage current and premature electrical breakdown, driven by impact ionization. In order to assess the characteristics of heavily irradiated samples, we have carried out dedicated campaigns on ATLASPix1 chips that included irradiations of neutrons and protons, made at different facilities. Here, we report on the electrical characterization of the irradiated samples at different ambient conditions, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for high efficiency, up to the fluence of 2E15 neq/cm2, beyond the radiation levels (TID and NIEL) expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.
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Submitted 28 May, 2020; v1 submitted 15 February, 2019;
originally announced February 2019.
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Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
Authors:
Moritz Kiehn,
Francesco Armando Di Bello,
Mathieu Benoit,
Raimon Casanova Mohr,
Hucheng Chen,
Kai Chen,
Sultan D. M. S.,
Felix Ehrler,
Didier Ferrere,
Dylan Frizell,
Sergio Gonzalez Sevilla,
Giuseppe Iacobucci,
Francesco Lanni,
Hongbin Liu,
Claudia Merlassino,
Jessica Metcalfe,
Antonio Miucci,
Ivan Peric,
Mridula Prathapan,
Rudolf Schimassek,
Mateus Vicente Barreto,
Thomas Weston,
Eva Vilella Figueras,
Alena Weber,
Michele Weber
, et al. (5 additional authors not shown)
Abstract:
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achie…
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Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of $10^{15}~\text{n}_\text{eq}/\text{cm}^2$ and detection efficiencies above $99.5~\%$. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
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Submitted 8 June, 2020; v1 submitted 16 July, 2018;
originally announced July 2018.
