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Event Reconstruction in a Liquid Xenon Time Projection Chamber with an Optically-Open Field Cage
Authors:
T. Stiegler,
S. Sangiorgio,
J. P. Brodsky,
M. Heffner,
S. Al Kharusi,
G. Anton,
I. J. Arnquist,
I. Badhrees,
P. S. Barbeau,
D. Beck,
V. Belov,
T. Bhatta,
A. Bolotnikov,
P. A. Breur,
E. Brown,
T. Brunner,
E. Caden,
G. F. Cao,
L. Cao,
C. Chambers,
B. Chana,
S. A. Charlebois,
M. Chiu,
B. Cleveland,
M. Coon
, et al. (126 additional authors not shown)
Abstract:
nEXO is a proposed tonne-scale neutrinoless double beta decay ($0νββ$) experiment using liquid ${}^{136}Xe$ (LXe) in a Time Projection Chamber (TPC) to read out ionization and scintillation signals. Between the field cage and the LXe vessel, a layer of LXe ("skin" LXe) is present, where no ionization signal is collected. Only scintillation photons are detected, owing to the lack of optical barrier…
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nEXO is a proposed tonne-scale neutrinoless double beta decay ($0νββ$) experiment using liquid ${}^{136}Xe$ (LXe) in a Time Projection Chamber (TPC) to read out ionization and scintillation signals. Between the field cage and the LXe vessel, a layer of LXe ("skin" LXe) is present, where no ionization signal is collected. Only scintillation photons are detected, owing to the lack of optical barrier around the field cage. In this work, we show that the light originating in the skin LXe region can be used to improve background discrimination by 5% over previous published estimates. This improvement comes from two elements. First, a fraction of the $γ$-ray background is removed by identifying light from interactions with an energy deposition in the skin LXe. Second, background from ${}^{222}Rn$ dissolved in the skin LXe can be efficiently rejected by tagging the $α$ decay in the ${}^{214}Bi-{}^{214}Po$ chain in the skin LXe.
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Submitted 24 March, 2021; v1 submitted 21 September, 2020;
originally announced September 2020.
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Reflectance of Silicon Photomultipliers at Vacuum Ultraviolet Wavelengths
Authors:
P. Lv,
G. F. Cao,
L. J. Wen,
S. Al Kharusi,
G. Anton,
I. J. Arnquist,
I. Badhrees,
P. S. Barbeau,
D. Beck,
V. Belov,
T. Bhatta,
P. A. Breur,
J. P. Brodsky,
E. Brown,
T. Brunner,
S. Byrne Mamahit,
E. Caden,
L. Cao,
C. Chambers,
B. Chana,
S. A. Charlebois,
M. Chiu,
B. Cleveland,
M. Coon,
A. Craycraft
, et al. (126 additional authors not shown)
Abstract:
Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in a vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 nm to 280 nm. Refractive index and extinct…
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Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. We report the angular dependence of the specular reflectance in a vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 nm to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of a FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.
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Submitted 4 December, 2019;
originally announced December 2019.
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Reflectivity and PDE of VUV4 Hamamatsu SiPMs in Liquid Xenon
Authors:
P. Nakarmi,
I. Ostrovskiy,
A. K. Soma,
F. Retiere,
S. Al Kharusi,
M. Alfaris,
G. Anton,
I. J. Arnquist,
I. Badhrees,
P. S. Barbeau,
D. Beck,
V. Belov,
T. Bhatta,
J. Blatchford,
P. A. Breur,
J. P. Brodsky,
E. Brown,
T. Brunner,
S. Byrne Mamahit,
E. Caden,
G. F. Cao,
L. Cao,
C. Chambers,
B. Chana,
S. A. Charlebois
, et al. (130 additional authors not shown)
Abstract:
Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE. Little information is currently a…
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Understanding reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE. Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 micrometer micro-cells conducted with xenon scintillation light (~175 nm) in liquid xenon. The specular reflectivity at 15 deg. incidence of three samples of VUV4 SiPMs is found to be 30.4+/-1.4%, 28.6+/-1.3%, and 28.0+/-1.3%, respectively. The PDE at normal incidence differs by +/-8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was also measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon.
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Submitted 24 December, 2019; v1 submitted 14 October, 2019;
originally announced October 2019.
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Characterization of SiPM Avalanche Triggering Probabilities
Authors:
G. Gallina,
F. Retiere,
P. Giampa,
J. Kroeger,
P. Margetak,
S. Byrne Mamahit,
A. De St. Croix,
F. Edaltafar,
N. Massacret,
M. Ward,
G. Zhang
Abstract:
Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The Photon Detection Efficiency (PDE) is the combined probability that a photon is abs…
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Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-generated carriers (electrons or holes) via a Geiger-mode avalanche. The Photon Detection Efficiency (PDE) is the combined probability that a photon is absorbed in the active volume of the device with a subsequently triggered avalanche. Absorption and avalanche triggering probabilities are correlated since the latter probability depends on where the photon is absorbed. In this paper, we introduce a physics motivated parameterization of the avalanche triggering probability that describes the PDE of a SiPM as a function of its reverse bias voltage, at different wavelengths. This parameterization is based on the fact that in p-on-n SiPMs the induced avalanches are electron-driven in the ultra-violet and near-ultra-violet ranges, while they become increasingly hole-driven towards the near-infra-red range. The model has been successfully applied to characterize two Hamamatsu MPPCs and one FBK SiPM, and it can be extended to other SiPMs. Furthermore, this model provides key insight on the electric field structure within SiPMs, which can explain the limitation of existing devices and be used to optimize the performance of future SiPMs.
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Submitted 11 April, 2019;
originally announced April 2019.
