Atomically smooth films of CsSb: a chemically robust visible light photocathode
Authors:
C. T. Parzyck,
C. A. Pennington,
W. J. I. DeBenedetti,
J. Balajka,
E. Echeverria,
H. Paik,
L. Moreschini,
B. D. Faeth,
C. Hu,
J. K. Nangoi,
V. Anil,
T. A. Arias,
M. A. Hines,
D. G. Schlom,
A. Galdi,
K. M. Shen,
J. M. Maxson
Abstract:
Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and co…
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Alkali antimonide semiconductor photocathodes provide a promising platform for the generation of high brightness electron beams, which are necessary for the development of cutting-edge probes including x-ray free electron lasers and ultrafast electron diffraction. However, to harness the intrinsic brightness limits in these compounds, extrinsic degrading factors, including surface roughness and contamination, must be overcome. By exploring the growth of CsxSb thin films monitored by in situ electron diffraction, the conditions to reproducibly synthesize atomically smooth films of CsSb on 3C-SiC (100) and graphene coated TiO2 (110) substrates are identified, and detailed structural, morphological, and electronic characterization is presented. These films combine high quantum efficiency in the visible (up to 1.2% at 400 nm), an easily accessible photoemission threshold of 550 nm, low surface roughness (down to 600 pm on a 1 um scale), and a robustness against oxidation up to 15 times greater then Cs3Sb. These properties suggest that CsSb has the potential to operate as an alternative to Cs$_3$Sb in electron source applications where the demands of the vacuum environment might otherwise preclude the use of traditional alkali antimonides.
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Submitted 31 May, 2023;
originally announced May 2023.
Critical-point model dielectric function analysis of WO$_3$ thin films deposited by atomic layer deposition techniques
Authors:
Ufuk Kilic,
Derek Sekora,
Alyssa Mock,
Rafal Korlacki,
Elena M. Echeverria,
Natale J. Ianno,
Eva Franke-Schubert,
Mathias M. Schubert
Abstract:
WO3 thin films were grown by atomic layer deposition and spectroscopic ellipsometry data gathered in the photon energy range of 0.72-8.5 eV and from multiple samples was utilized to determine the frequency dependent complex-valued isotropic dielectric function for WO3. We employ a critical-point model dielectric function analysis and determine a parameterized set of oscillators and compare the obs…
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WO3 thin films were grown by atomic layer deposition and spectroscopic ellipsometry data gathered in the photon energy range of 0.72-8.5 eV and from multiple samples was utilized to determine the frequency dependent complex-valued isotropic dielectric function for WO3. We employ a critical-point model dielectric function analysis and determine a parameterized set of oscillators and compare the observed critical-point contributions with the vertical transition energy distribution found within the band structure of WO3 calculated by density functional theory. We investigate surface roughness with atomic force microscopy and compare to ellipsometric determined effective roughness layer thickness.
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Submitted 8 May, 2018;
originally announced May 2018.
