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High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Authors:
Seunguk Song,
Kwan-Ho Kim,
Rachael Keneipp,
Nicholas Trainor,
Chen Chen,
Jeffrey Zheng,
Joan M. Redwing,
Marija Drndić,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistan…
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Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of FeFETs can be limited by a charge imbalance between the ferroelectric layer and the channel, and for low-dimensional semiconductors, also by a high contact resistance between the metal electrodes and the channel. Here, we report a significant enhancement in performance of contact-engineered FeFETs with a 2D MoS2 channel and a ferroelectric Al0.68Sc0.32N (AlScN) gate dielectric. Replacing Ti with In contact electrodes results in a fivefold increase in on-state current (~120 uA/um at 1 V) and on-to-off ratio (~2*10^7) in the FeFETs. In addition, the high carrier concentration in the MoS2 channel during the on-state (> 10^14 cm^-2) facilitates the observation of a metal-to-insulator phase transition in monolayer MoS2 permitting observation of high field effect mobility (> 100 cm^2V^-1s^-1) at cryogenic temperatures. Our work and devices broaden the potential of FeFETs and provides a unique platform to implement high-carrier-density transport in a 2D channel.
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Submitted 4 June, 2024;
originally announced June 2024.
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Three-dimensional micro-electromagnet traps for neutral and charged particles
Authors:
M. Drndic,
C. S. Lee,
R. M. Westervelt
Abstract:
Three-dimensional (3D) micro-electromagnets were developed to control particle motion in magnetic field landscapes in vacuum near a chip. Multiple layers of micron-scale conductors separated by transparent insulators create particle containers with deep, symmetric and time-dependent potentials, suitable for integration in quantum circuits. Single and coupled multiple 3D traps, integrated 3D trap…
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Three-dimensional (3D) micro-electromagnets were developed to control particle motion in magnetic field landscapes in vacuum near a chip. Multiple layers of micron-scale conductors separated by transparent insulators create particle containers with deep, symmetric and time-dependent potentials, suitable for integration in quantum circuits. Single and coupled multiple 3D traps, integrated 3D traps with a mirror, 3D guides for neutral particles with spin, and traps for electrons in vacuum are described.
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Submitted 31 October, 2000;
originally announced October 2000.
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Properties of Microelectromagnet Mirrors as Reflectors of Cold Rb Atoms
Authors:
M. Drndic,
G. Zabow,
C. S. Lee,
J. H. Thywissen,
K. S. Johnson,
M. Prentiss,
R. M. Westervelt,
P. D. Featonby,
V. Savalli,
L. Cognet,
K. Helmerson,
N. Westbrook,
C. I. Westbrook,
W. D. Phillips,
A. Aspect
Abstract:
Cryogenically cooled microelectromagnet mirrors were used to reflect a cloud of free-falling laser-cooled 85Rb atoms at normal incidence. The mirrors consisted of microfabricated current-carrying Au wires in a periodic serpentine pattern on a sapphire substrate. The fluorescence from the atomic cloud was imaged after it had bounced off a mirror. The transverse width of the cloud reached a local…
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Cryogenically cooled microelectromagnet mirrors were used to reflect a cloud of free-falling laser-cooled 85Rb atoms at normal incidence. The mirrors consisted of microfabricated current-carrying Au wires in a periodic serpentine pattern on a sapphire substrate. The fluorescence from the atomic cloud was imaged after it had bounced off a mirror. The transverse width of the cloud reached a local minimum at an optimal current corresponding to minimum mirror roughness. A distinct increase in roughness was found for mirror configurations with even versus odd number of lines. These observations confirm theoretical predictions.
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Submitted 19 August, 1999;
originally announced August 1999.
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Guiding Neutral Atoms
Authors:
N. H. Dekker,
C. S. Lee,
V. Lorent,
J. H. Thywissen,
M. Drndic,
S. P. Smith,
R. M. Westervelt,
M. Prentiss
Abstract:
We demonstrate the guiding of neutral atoms by the magnetic fields due to microfabricated current-carrying wires on a chip. Atoms are guided along a magnetic field minimum parallel to and above the current-carrying wires. Two waveguide configurations are demonstrated: one using two wires with an external magnetic field, and a second using four wires without an external field. These waveguide geo…
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We demonstrate the guiding of neutral atoms by the magnetic fields due to microfabricated current-carrying wires on a chip. Atoms are guided along a magnetic field minimum parallel to and above the current-carrying wires. Two waveguide configurations are demonstrated: one using two wires with an external magnetic field, and a second using four wires without an external field. These waveguide geometries can be extended to integrated atom optics circuits, including beamsplitters.
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Submitted 16 August, 1999;
originally announced August 1999.
