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Widely-tunable and narrow-linewidth hybrid-integrated diode laser at 637 nm
Authors:
Lisa V. Winkler,
Kirsten Gerritsma,
Albert van Rees,
Philip P. J. Schrinner,
Marcel Hoekman,
Ronald Dekker,
Adriano R. do Nascimento Jr.,
Peter J. M. van der Slot,
Christian Nölleke,
Klaus-J. Boller
Abstract:
We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of HeNe lasers (633 nm). The lasers provide wide mode-hop free tuning up to 97 GHz and a narrow intrinsic linewidth down to 10 kHz. The maximum output power is 2.…
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We present hybrid-integrated extended cavity diode lasers tunable around 637 nm, with a gain-wide spectral coverage of 8 nm. This tuning range allows addressing the zero-phonon line of nitrogen vacancy centers and includes the wavelength of HeNe lasers (633 nm). The lasers provide wide mode-hop free tuning up to 97 GHz and a narrow intrinsic linewidth down to 10 kHz. The maximum output power is 2.5 mW in a single-mode fiber, corresponding to an on-chip power of 4.0 mW. Full integration and packaging in a standard housing with fiber pigtails provide high intrinsic stability and will enable integration into complex optical systems.
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Submitted 8 April, 2024;
originally announced April 2024.
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Hybrid integrated near UV lasers using the deep-UV Al2O3 platform
Authors:
C. A. A. Franken,
W. A. P. M. Hendriks,
L. V. Winkler,
M. Dijkstra,
A. R. do Nascimento Jr,
A. van Rees,
M. R. S. Mardani,
R. Dekker,
J. van Kerkhof,
P. J. M. van der Slot,
S. M. García-Blanco,
K. -J. Boller
Abstract:
Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable…
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Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
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Submitted 22 February, 2023;
originally announced February 2023.
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Sub-kHz-linewidth external-cavity laser (ECL) with Si$_{3}$N$_{4}$ resonator used as a tunable pump for a Kerr frequency comb
Authors:
Pascal Maier,
Yung Chen,
Yilin Xu,
Yiyang Bao,
Matthias Blaicher,
Dimitri Geskus,
Ronald Dekker,
Junqiu Liu,
Philipp-Immanuel Dietrich,
Huanfa Peng,
Sebastian Randel,
Wolfgang Freude,
Tobias J. Kippenberg,
Christian Koos
Abstract:
Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. External feedback circuits can be efficiently implemented using low-loss silicon nitride (Si$_{3}$N$_{4}$) waveguides, which do not suffer from two-p…
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Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. External feedback circuits can be efficiently implemented using low-loss silicon nitride (Si$_{3}$N$_{4}$) waveguides, which do not suffer from two-photon absorption and can thus handle much higher power levels than conventional silicon photonics. However, co-integrating III-V-based gain elements with tunable external feedback circuits in chip-scale modules still represents a challenge, requiring either technologically demanding heterogeneous integration techniques or costly high-precision multi-chip assembly. In this work, we demonstrate Si$_{3}$N$_{4}$-based hybrid integrated ECL that exploit 3D-printed structures such as intra-cavity photonic wire bonds and facet-attached microlenses for low-loss optical coupling with relaxed alignment tolerances, thereby overcoming the need for active alignment while maintaining the full flexibility of multi-chip integration techniques. In a proof-of-concept experiment, we demonstrate an ECL offering a 90 nm tuning range (1480 nm - 1570 nm) with on-chip output powers above 12 dBm and side-mode suppression ratios of up to 59 dB. We achieve an intrinsic linewidth of 979 Hz, which is among the lowest values reported for comparable feedback architectures. The optical loss of the intra-cavity photonic wire bond between the III-V gain element and the Si$_{3}$N$_{4}$-based tunable feedback circuit amounts to approximately (1.6 $\pm$ 0.2) dB. We use the ECL as a tunable pump laser to generate a dissipative Kerr soliton frequency comb. To the best of our knowledge, our experiments represent the first demonstration of a single-soliton Kerr comb generated with a pump that is derived from a hybrid ECL.
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Submitted 10 February, 2023; v1 submitted 11 November, 2022;
originally announced November 2022.
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Photonic integrated circuits for life sciences
Authors:
Jeremy Witzens,
Patrick Leisching,
Alireza T. Mashayekh,
Thomas Klos,
Sina Koch,
Florian Merget,
Douwe Geuzebroek,
Edwin Klein,
Theo Veenstra,
Ronald Dekker
Abstract:
We report on the use of silicon nitride (SiN) photonic integrated circuits (PICs) in high-value instrumentation, namely multi-color laser engines (MLEs), a core element of cutting-edge biophotonic systems applied to confocal microscopy, fluorescent microscopy - including super-resolution stimulated emission depletion (STED) microscopy - flow cytometry, optogenetics, genetic analysis and DNA sequen…
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We report on the use of silicon nitride (SiN) photonic integrated circuits (PICs) in high-value instrumentation, namely multi-color laser engines (MLEs), a core element of cutting-edge biophotonic systems applied to confocal microscopy, fluorescent microscopy - including super-resolution stimulated emission depletion (STED) microscopy - flow cytometry, optogenetics, genetic analysis and DNA sequencing, to name just a few. These have in common the selective optical excitation of molecules - fluorophores, or, in the case of optogenetics, light-gated ion channels - with laser radiation falling within their absorption spectrum. Unambiguous identification of molecules or cellular subsets often requires jointly analyzing fluorescent signals from several fluorescent markers, so that MLEs are required to provide excitation wavelengths for several commercially available biocompatible fluorophores. A number of functionalities are required from MLEs in addition to sourcing the required wavelengths: Variable attenuation and/or digital intensity modulation in the Hz to kHz range are required for a number of applications such as optical trap**, lifetime imaging, or fluorescence recovery after photobleaching (FRAP). Moreover, switching of the laser between two fiber outputs can be utilized for example to switch between scanning confocal microscopy and widefield illumination modes, for instance, for conventional fluorescence imaging.
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Submitted 15 December, 2020;
originally announced January 2021.
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A hybrid-integrated diode laser in the visible spectral range
Authors:
Cornelis A. A. Franken,
Albert van Rees,
Lisa V. Winkler,
Youwen Fan,
Dimitri Geskus,
Ronald Dekker,
Douwe H. Geuzebroek,
Carsten Fallnich,
Peter J. M. van der Slot,
Klaus-J. Boller
Abstract:
Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration of a hybrid-integrated diode laser in the visible spectral range. Using an AlGaInP optical amplifier coupled to a low-loss Si3N4 feedback circuit based on micr…
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Generating visible light with wide tunability and high coherence based on photonic integrated circuits is of high interest for applications in biophotonics, precision metrology and quantum technology. Here we present the first demonstration of a hybrid-integrated diode laser in the visible spectral range. Using an AlGaInP optical amplifier coupled to a low-loss Si3N4 feedback circuit based on microring resonators, we obtain a spectral coverage of 10.8 nm around 684.4 nm wavelength with up to 4.8 mW output power. The measured intrinsic linewidth is 2.3$\pm$0.2 kHz.
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Submitted 14 June, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Hybrid integrated semiconductor lasers with silicon nitride feedback circuits
Authors:
Klaus-J. Boller,
Albert van Rees,
Youwen Fan,
Jesse Mak,
Rob E. M. Lammerink,
Cornelis A. A. Franken,
Peter J. M. van der Slot,
David A. I. Marpaung,
Carsten Fallnich,
Jörn P. Ep**,
Ruud M. Oldenbeuving,
Dimitri Geskus,
Ronald Dekker,
Ilka Visscher,
Robert Grootjans,
Chris G. H. Roeloffzen,
Marcel Hoekman,
Edwin J. Klein,
Arne Leinse,
René G. Heideman
Abstract:
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level i…
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Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.
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Submitted 18 December, 2019; v1 submitted 25 November, 2019;
originally announced November 2019.
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Ultra-Stretchable Interconnects for High-Density Stretchable Electronics
Authors:
Salman Shafqat,
Johan P. M. Hoefnagels,
Angel Savov,
Shivani Joshi,
Ronald Dekker,
Marc G. D. Geers
Abstract:
The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS)-type) process recipes using bulk i…
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The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS)-type) process recipes using bulk integrated circuit (IC) microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R) post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic) stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.
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Submitted 13 September, 2017;
originally announced September 2017.
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Propagation of short lightpulses in microring resonators: ballistic transport versus interference in the frequency domain
Authors:
Alfred Driessen,
Douwe H. Geuzebroek,
Edwin Klein,
Ronald Dekker,
Remco Stoffer,
C. Bornholdt
Abstract:
The propagation of short lightpulses in waveguiding structures with optical feedback, in our case optical microresonators, has been studied theoretically and experimentally. It appears that, dependent on the measurement set-up, ballistic transport or interference in the time domain of fs and ps laser pulses can be observed. The experiments are analyzed in terms of characteristic time scales of the…
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The propagation of short lightpulses in waveguiding structures with optical feedback, in our case optical microresonators, has been studied theoretically and experimentally. It appears that, dependent on the measurement set-up, ballistic transport or interference in the time domain of fs and ps laser pulses can be observed. The experiments are analyzed in terms of characteristic time scales of the source, the waveguide device and the detector arrangement and are related to Heisenberg's uncertainty principle. Based on this analysis a criterion is given for the upper bitrate for error free data transmission through optical microresonators.
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Submitted 4 February, 2012;
originally announced February 2012.
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A comparison of two techniques for bibliometric map**: Multidimensional scaling and VOS
Authors:
Nees Jan van Eck,
Ludo Waltman,
Rommert Dekker,
Jan van den Berg
Abstract:
VOS is a new map** technique that can serve as an alternative to the well-known technique of multidimensional scaling. We present an extensive comparison between the use of multidimensional scaling and the use of VOS for constructing bibliometric maps. In our theoretical analysis, we show the mathematical relation between the two techniques. In our experimental analysis, we use the techniques fo…
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VOS is a new map** technique that can serve as an alternative to the well-known technique of multidimensional scaling. We present an extensive comparison between the use of multidimensional scaling and the use of VOS for constructing bibliometric maps. In our theoretical analysis, we show the mathematical relation between the two techniques. In our experimental analysis, we use the techniques for constructing maps of authors, journals, and keywords. Two commonly used approaches to bibliometric map**, both based on multidimensional scaling, turn out to produce maps that suffer from artifacts. Maps constructed using VOS turn out not to have this problem. We conclude that in general maps constructed using VOS provide a more satisfactory representation of a data set than maps constructed using well-known multidimensional scaling approaches.
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Submitted 12 March, 2010;
originally announced March 2010.
